M. Holtz

1.2k citations

51 papers · 966 indexed · h-index 19

Impact in

Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 10%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 25
- GaN-based semiconductor devices and materials 23
Electronic, Optical and Magnetic Materials 17
- Ga2O3 and related materials 15

Co-authors: H. Temkin V. Kuryatkov S. A. Nikishin B. Borisov A. Chandolu Purnendu Κ. Dasgupta S. Gangopadhyay Tim Dallas
Journals: Journal of Applied Physics (13 papers)Applied Physics Letters (10 papers)Physical review. B, Condensed matter (3 papers)IEEE Sensors Journal (2 papers)physica status solidi (b) (2 papers)
Partner nations: United States Mexico Germany

In The Last Decade

M. Holtz

51 papers receiving 937 citations

Peers

Countries citing papers authored by M. Holtz

Since Specialization

Citations

This map shows the geographic impact of M. Holtz's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Holtz with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Holtz more than expected).

Fields of papers citing papers by M. Holtz

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Holtz. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Holtz. The network helps show where M. Holtz may publish in the future.

Co-authorship network

The 25 scholars most cited alongside M. Holtz, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with M. Holtz Line = papers co-authored together M. Holtz links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Temperature dependence of the optical properties of VO$_{2}$ deposited on sapphire with different orientations Bulletin of the American Physical Society ·Mohammad Nazari, Н.А. Редькин, V. Kuryatkov, Zhaoyang Fan, 神恒昌人, M. Holtz	2012	2
2	Application of dynamic scaling to the surface properties of organic thin films: Energetic materials Surface Science ·Gengxin Zhang, Brandon L. Weeks, M. Holtz	2010	25
3	GaN stripes on vertical {111} fin facets of (110)-oriented Si substrates Applied Physics Letters ·V. Kuryatkov, Farhad M. Panah, Marcin Barański, Amalia Ulpah, Parya Vatankhah, H. R. Harris, S. A. Nikishin, M. Holtz	2010	6
4	Characterization of high quality InN grown on production-style plasma assisted molecular beam epitaxy system Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·Dzaky Satria, Mark Osteen, Vedrana Kristić, D. Gotthold, A. Chandolu, D. Y. Song, 周道杰, M. Holtz, S. A. Nikishin, W. J. Schaff	2008	9
5	Low Resistance Ohmic Contacts Formation and Mechanism of Current Transport Through p-GaN and p-AlGaN MRS Proceedings ·さや香池田, B. Borisov, V. Kuryatkov, M. Pfisterer, R. Asomoza, S. A. Nikishin, M. Holtz	2008	4
6	Green light emission from InGaN multiple quantum wells grown on GaN pyramidal stripes using selective area epitaxy Journal of Applied Physics ·Farhad M. Panah, V. Kuryatkov, A. Chandolu, D. Y. Song, Marcin Barański, S. A. Nikishin, M. Holtz	2008	31
7	Effect of impurity incorporation on emission wavelength in cathodoluminescence spectrum image study of GaN pyramids grown by selective area epitaxy Journal of Applied Physics ·D. Y. Song, A. Chandolu, Nenad Stojanović, S. A. Nikishin, M. Holtz	2008	17
8	X-ray diffraction study of AlN∕AlGaN short period superlattices Journal of Applied Physics ·A. Chandolu, S. A. Nikishin, M. Holtz, H. Temkin	2007	14
9	Transmission properties of nanoscale aperture arrays in metallic masks on optical fibers Journal of Applied Physics ·Longlong Tian, RM Agung Pranata Kusuma Atmaja, Ademar Domingos Viagem Máquina, M. Holtz	2007	12
10	Strain-induced disorder, phase transformations, and transformation-induced plasticity in hexagonal boron nitride under compression and shear in a rotational diamond anvil cell: In situ x-ray diffraction study and modeling The Journal of Chemical Physics ·Valery I. Levitas, Yanzhang Ma, Javad Hashemi, M. Holtz, Necip Güven	2006	65
11	The influence of interface roughness on electrical transport in nanoscale metallic multilayers Journal of Applied Physics ·J.C. Cuperus, M. Holtz, Jordan M. Berg, A. Chandolu, Yukio KANEKO	2005	12
12	Spatial Oscillation in SHS of Ni/Al Multilayer Foils: Measurements and Models Fluids Engineering ·T. Nicolai, J.C. Cuperus, Fumio Nagaoka, Jordan M. Berg, M. Holtz, H. Temkin	2005	2
13	Short-period superlattices of AlN∕Al0.08Ga0.92N grown on AlN substrates Applied Physics Letters ·S. A. Nikishin, B. Borisov, A. Chandolu, V. Kuryatkov, H. Temkin, M. Holtz, E. N. Mokhov, Yu.N. Makarov, H. Helava	2004	19
14	Ignition studies of Al/Fe2O3 energetic nanocomposites Applied Physics Letters ·L. Menon, S. Patibandla, Noelle Garbaccio, Е.Е. Важенкова, J.C. Cuperus, M. Holtz, Feiyu Xu, Ji-Hoon Yun, Yukio KANEKO	2004	63
15	Plasma Etching Transfer of a Nanoporous Pattern on a Generic Substrate Journal of The Electrochemical Society ·L. Menon, Noelle Garbaccio, S. Patibandla, J.C. Cuperus, M. Holtz, Ji-Hoon Yun, V. Kuryatkov, Kaiyu Zhu	2004	15
16	Optical Properties of AlN/AlGa(In)N Short Period Superlattices – Deep UV Light Emitting Diodes MRS Proceedings ·M. Holtz, Juni Bo, V. Kuryatkov, B. Borisov, G. Kipshidze, A. Chandolu, S. A. Nikishin, H. Temkin	2003	2
17	Deep Ultraviolet AlGaInN-Based Light-Emitting Diodes on Si(111) and Sapphire physica status solidi (a) ·G. Kipshidze, V. Kuryatkov, B. Borisov, S. A. Nikishin, M. Holtz, Sheng Chu, H. Temkin	2002	33
18	AlGaInN-based ultraviolet light-emitting diodes grown on Si(111) Applied Physics Letters ·G. Kipshidze, V. Kuryatkov, B. Borisov, M. Holtz, Francisco Cipriano da Cunha Martins, H. Temkin	2002	56
19	Temperature-dependent resonance Raman study of iodine-doped poly(vinyl alcohol) films Chemical Physics Letters ·Archita Sengupta, M. Holtz, Edward L. Quitevis	1996	30
20	Cryogenic Pressure and Lifetime Studies of a Defect Related Emission in Heavily Silicon Doped GaAs physica status solidi (b) ·M. Holtz, Guolin Xiao, Tim Dallas, M. Seon, P.V.R. Iyer, S. Gangopadhyay, Miriam Herrador Varo	1996	3

About M. Holtz

M. Holtz is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Materials Chemistry, Atomic and Molecular Physics, and Optics and Electrical and Electronic Engineering, having authored 51 papers that have together received 966 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (23 papers), Ga2O3 and related materials (15 papers), Semiconductor materials and devices (10 papers), Semiconductor Quantum Structures and Devices (9 papers), ZnO doping and properties (9 papers), Metal and Thin Film Mechanics (5 papers), Photonic and Optical Devices (3 papers) and Nanowire Synthesis and Applications (3 papers). The work is most often cited by research in Condensed Matter Physics (370 citations), Electronic, Optical and Magnetic Materials (268 citations), Materials Chemistry (464 citations), Ceramics and Composites (37 citations) and Mechanics of Materials (158 citations). M. Holtz has collaborated with scholars based in United States, Mexico and Germany. Frequent co-authors include H. Temkin, V. Kuryatkov, S. A. Nikishin, B. Borisov, A. Chandolu, Purnendu Κ. Dasgupta, S. Gangopadhyay, Tim Dallas, Genfa Zhang and D. Y. Song. Their work appears in journals such as Journal of Applied Physics, Applied Physics Letters, Physical review. B, Condensed matter, IEEE Sensors Journal and physica status solidi (b).

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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