Kui Dang

1.9k total citations · 1 hit paper
38 papers, 1.5k citations indexed

About

Kui Dang is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Electrical and Electronic Engineering. According to data from OpenAlex, Kui Dang has authored 38 papers receiving a total of 1.5k indexed citations (citations by other indexed papers that have themselves been cited), including 23 papers in Condensed Matter Physics, 22 papers in Electronic, Optical and Magnetic Materials and 20 papers in Electrical and Electronic Engineering. Recurrent topics in Kui Dang's work include GaN-based semiconductor devices and materials (23 papers), Ga2O3 and related materials (22 papers) and ZnO doping and properties (14 papers). Kui Dang is often cited by papers focused on GaN-based semiconductor devices and materials (23 papers), Ga2O3 and related materials (22 papers) and ZnO doping and properties (14 papers). Kui Dang collaborates with scholars based in China, Saudi Arabia and United States. Kui Dang's co-authors include Jincheng Zhang, Hong Zhou, Yue Hao, Yanni Zhang, Qinglong Yan, Zhihong Liu, Pengfei Dong, Yue Hao, Zhaoqing Feng and Qian Feng and has published in prestigious journals such as Nature Communications, Applied Physics Letters and IEEE Transactions on Industrial Electronics.

In The Last Decade

Kui Dang

35 papers receiving 1.5k citations

Hit Papers

Ultra-wide bandgap semiconductor Ga2O3 power diodes 2022 2026 2023 2024 2022 100 200 300 400
What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

  1. Ultra-wide bandgap semiconductor Ga2O3 power diodes
    2022 443 citations Jincheng Zhang, Pengfei Dong et al. Nature Communications profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Kui Dang China 18 1.2k 1.0k 543 540 423 38 1.5k
Feng Zhou China 14 505 0.4× 424 0.4× 415 0.8× 235 0.4× 219 0.5× 71 852
Shenglei Zhao China 19 707 0.6× 458 0.4× 822 1.5× 166 0.3× 811 1.9× 103 1.3k
S. Kundu India 15 249 0.2× 161 0.2× 428 0.8× 256 0.5× 242 0.6× 53 742
Razia Nongjai India 12 348 0.3× 516 0.5× 266 0.5× 92 0.2× 55 0.1× 29 655
Yiwen Song United States 13 236 0.2× 351 0.3× 211 0.4× 62 0.1× 173 0.4× 37 546
Fengming Zhang China 15 215 0.2× 410 0.4× 251 0.5× 80 0.1× 125 0.3× 63 659
Esmat Farzana United States 17 1.1k 0.9× 1.0k 1.0× 288 0.5× 554 1.0× 117 0.3× 32 1.2k
Yimen Zhang China 17 379 0.3× 476 0.5× 1.3k 2.3× 105 0.2× 171 0.4× 258 1.6k

Countries citing papers authored by Kui Dang

Since Specialization
Citations

This map shows the geographic impact of Kui Dang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Kui Dang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Kui Dang more than expected).

Fields of papers citing papers by Kui Dang

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Kui Dang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Kui Dang. The network helps show where Kui Dang may publish in the future.

Co-authorship network of co-authors of Kui Dang

This figure shows the co-authorship network connecting the top 25 collaborators of Kui Dang. A scholar is included among the top collaborators of Kui Dang based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Kui Dang. Kui Dang is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Dang, Kui, Zhilin Qiu, Hong Zhou, et al.. (2025). Ultra-Wideband High-Power GaN Rectifier with Extended Input Power Range Based on a Terminal Matching Network. Electronics. 14(1). 184–184. 1 indexed citations
2.
Zhou, Hong, Hehe Gong, Chenlu Wang, et al.. (2025). Heterogeneous integration of ultrawide bandgap semiconductors for radio frequency power devices. Science Advances. 11(47). eadw6167–eadw6167.
3.
Song, Xiufeng, Shenglei Zhao, Kui Dang, et al.. (2025). 710 GHz GaN gradient doped Schottky barrier diode with high breakdown voltage. Applied Physics Letters. 126(10).
4.
Wang, Ce, Hong Zhou, Sami Alghamdi, et al.. (2025). Proposal and Simulation of β-Ga₂O₃ Hetero- Junction Schottky Diodes With Low Work-Function Anode and High Breakdown Voltage. IEEE Journal of the Electron Devices Society. 13. 334–342. 1 indexed citations
5.
Dang, Kui, Zhilin Qiu, Peng Zhan, et al.. (2024). Current collapse suppressed GaN diodes with 38 Watts high RF power rectifier capability. Science China Information Sciences. 67(2). 6 indexed citations
6.
Zhou, Hong, Chenlu Wang, Sihan Sun, et al.. (2024). Low turn-on voltage and 2.3 kV β -Ga2O3 heterojunction barrier Schottky diodes with Mo anode. Applied Physics Letters. 124(17). 16 indexed citations
7.
Liu, Zhihong, Zeyu Song, Yachao Zhang, et al.. (2024). High-Al-composition AlGaN/GaN MISHEMT on Si with fT of 320 GHz. Science China Information Sciences. 67(6). 1 indexed citations
8.
Zhou, Min, Hong Zhou, Xiaojin Chen, et al.. (2024). 71 GHz-fmax β-Ga2O3-on-SiC RF Power MOSFETs with Record Pout=3.1 W/mm and PAE=50.8% at 2 GHz, Pout= 2.3 W/mm at 4 GHz, and Low Microwave Noise Figure. The HKU Scholars Hub (University of Hong Kong). 1–2. 2 indexed citations
9.
Dang, Kui, et al.. (2024). A 5.8-GHz High-Efficiency Inverse Class-F Rectifier Circuit with GaN Schottky Diode. 292–296. 1 indexed citations
10.
Zhou, Min, Hong Zhou, Sen Huang, et al.. (2023). 1.1 A/mm ß-Ga2O3-on-SiC RF MOSFETs with 2.3 W/mm Pout and 30% PAE at 2 GHz and fT/fmax of 27.6/57 GHz. The HKU Scholars Hub (University of Hong Kong). 1–4. 6 indexed citations
11.
Dang, Kui, Peng Zhan, Zhilin Qiu, et al.. (2023). First Demonstration of Watt-Level C-Band MMIC Rectifier With GaN Schottky Diode. IEEE Microwave and Wireless Technology Letters. 33(5). 591–594. 6 indexed citations
12.
Yao, Yixin, Yachao Zhang, Jiaduo Zhu, et al.. (2023). Study of the AlPN/GaN high electron mobility transistors with improved transconductance linearity. Applied Physics Letters. 123(20). 1 indexed citations
13.
Zhang, Jincheng, Pengfei Dong, Kui Dang, et al.. (2022). Ultra-wide bandgap semiconductor Ga2O3 power diodes. Nature Communications. 13(1). 3900–3900. 443 indexed citations breakdown →
14.
Lv, Yuanjie, Yuangang Wang, Shaobo Dun, et al.. (2020). Demonstration of β-Ga2O3 Junction Barrier Schottky Diodes With a Baliga's Figure of Merit of 0.85 GW/cm2 or a 5A/700 V Handling Capabilities. IEEE Transactions on Power Electronics. 36(6). 6179–6182. 136 indexed citations
15.
Bian, Zhaoke, Jincheng Zhang, Shenglei Zhao, et al.. (2019). Gamma irradiation impact on GaN quasi-vertical Schottky barrier diodes. Journal of Physics D Applied Physics. 53(4). 45103–45103. 9 indexed citations
16.
Zhou, Hong, Qian Feng, Jing Ning, et al.. (2019). High-Performance Vertical $\beta$ -Ga2O3Schottky Barrier Diode With Implanted Edge Termination. IEEE Electron Device Letters. 40(11). 1788–1791. 123 indexed citations
17.
Bian, Zhaoke, Hong Zhou, Shengrui Xu, et al.. (2018). High-performance quasi-vertical GaN Schottky diode with low turn-on voltage. Superlattices and Microstructures. 125. 295–301. 11 indexed citations
18.
Zhang, Li, Hong Zhou, Weihang Zhang, et al.. (2018). AlGaN-Channel Gate Injection Transistor on Silicon Substrate With Adjustable 4–7-V Threshold Voltage and 1.3-kV Breakdown Voltage. IEEE Electron Device Letters. 39(7). 1026–1029. 23 indexed citations
19.
Hu, Zhuangzhuang, Hong Zhou, Kui Dang, et al.. (2018). Lateral $\beta$ -Ga2O3 Schottky Barrier Diode on Sapphire Substrate With Reverse Blocking Voltage of 1.7 kV. IEEE Journal of the Electron Devices Society. 6. 815–820. 53 indexed citations
20.
Zhang, Tao, Jincheng Zhang, Hong Zhou, et al.. (2018). A 1.9 kV/2.61 mΩ·cm2 Lateral GaN Schottky Barrier Diode on Silicon Substrate with Tungsten Anode and Low Turn-On Voltage of 0.35 V. IEEE Electron Device Letters. 1–1. 45 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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