Kui Dang

1.9k citations

38 papers · 1.5k indexed · 1 hit paper · h-index 18

Impact in

Electronic, Optical and Magnetic Materials top 2%
- Ga2O3 and related materials
Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials

Papers in ⓘ

Condensed Matter Physics 23
- GaN-based semiconductor devices and materials 23
Electronic, Optical and Magnetic Materials 22
- Ga2O3 and related materials 22

Co-authors: Jincheng Zhang (33 shared papers)Hong Zhou (31 shared papers)Yue Hao (20 shared papers)Yanni Zhang (6 shared papers)Qinglong Yan (4 shared papers)Zhihong Liu (11 shared papers)Pengfei Dong (3 shared papers)Yue Hao (14 shared papers)
Journals: IEEE Electron Device Letters (8 papers)Applied Physics Letters (4 papers)IEEE Transactions on Electron Devices (3 papers)Applied Physics Express (2 papers)IEEE Journal of the Electron Devices Society (2 papers)
Partner nations: China Saudi Arabia United States

In The Last Decade

Kui Dang

35 papers receiving 1.5k citations

Hit Papers

align trajectories log scale

Ultra-wide bandgap semiconductor Ga2O3 power diodes 2022 · 443 citations

Peers

Countries citing papers authored by Kui Dang

Since Specialization

Citations

This map shows the geographic impact of Kui Dang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Kui Dang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Kui Dang more than expected).

Fields of papers citing papers by Kui Dang

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Kui Dang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Kui Dang. The network helps show where Kui Dang may publish in the future.

Co-authors

The 25 scholars most cited alongside Kui Dang, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Kui Dang Line = papers co-authored together Kui Dang links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 38 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Ultra-wide bandgap semiconductor Ga2O3 power diodes Nature Communications ·Jincheng Zhang, Pengfei Dong, Kui Dang, Yanni Zhang, Qinglong Yan, Hu Xiang, Jie Su, Zhihong Liu, Mengwei Si, Jiacheng Gao, Moufu Kong, Hong Zhou, Yue Hao Hit paper breakdown →	2022	443
2	Field-Plated Lateral β-Ga2O3 Schottky Barrier Diode with High Reverse Blocking Voltage of More Than 3 kV and High DC Power Figure-of-Merit of 500 MW/cm2 IEEE Electron Device Letters ·Zhuangzhuang Hu, Hong Zhou, Qian Feng, Jincheng Zhang, Chunfu Zhang, Kui Dang, Yuncong Cai, Zhaoqing Feng, Yangyang Gao, Xuanwu Kang, Yue Hao	2018	145
3	Demonstration of β-Ga₂O₃ Junction Barrier Schottky Diodes With a Baliga's Figure of Merit of 0.85 GW/cm² or a 5A/700 V Handling Capabilities IEEE Transactions on Power Electronics ·Yuanjie Lv, Yuangang Wang, Xingchang Fu, Shaobo Dun, Zhaofeng Sun, Hongyu Liu, Xingye Zhou, Xubo Song, Kui Dang, Shixiong Liang, Jincheng Zhang, Hong Zhou, Zhihong Feng, Shujun Cai, Yue Hao	2020	136
4	High-Performance Vertical $\beta$ -Ga₂O₃Schottky Barrier Diode With Implanted Edge Termination IEEE Electron Device Letters ·Hong Zhou, Qian Feng, Jing Ning, Chunfu Zhang, Peijun Ma, Yue Hao, Qinglong Yan, Jincheng Zhang, Yuanjie Lv, Zhihong Liu, Yanni Zhang, Kui Dang, Pengfei Dong, Zhaoqing Feng	2019	123
5	A 5.8-GHz High-Power and High-Efficiency Rectifier Circuit With Lateral GaN Schottky Diode for Wireless Power Transfer IEEE Transactions on Power Electronics ·Kui Dang, Jincheng Zhang, Hong Zhou, Sen Huang, Tao Zhang, Zhaoke Bian, Yachao Zhang, Xinhua Wang, Shenglei Zhao, Wei Ke, Yue Hao	2019	87
6	Beveled Fluoride Plasma Treatment for Vertical $\beta$ -Ga₂O₃Schottky Barrier Diode With High Reverse Blocking Voltage and Low Turn-On Voltage IEEE Electron Device Letters ·Zhuangzhuang Hu, Yuanjie Lv, Chunyong Zhao, Qian Feng, Zhaoqing Feng, Kui Dang, Xusheng Tian, Yachao Zhang, Jing Ning, Hong Zhou, Xuanwu Kang, Jincheng Zhang, Yue Hao	2020	71
7	Lateral $\beta$ -Ga₂O₃ Schottky Barrier Diode on Sapphire Substrate With Reverse Blocking Voltage of 1.7 kV IEEE Journal of the Electron Devices Society ·Zhuangzhuang Hu, Hong Zhou, Kui Dang, Yuncong Cai, Zhaoqing Feng, Yangyang Gao, Qian Feng, Jincheng Zhang, Yue Hao	2018	53
8	A > 3 kV/2.94 m $\Omega\cdot$ cm² and Low Leakage Current With Low Turn-On Voltage Lateral GaN Schottky Barrier Diode on Silicon Substrate With Anode Engineering Technique IEEE Electron Device Letters ·Tao Zhang, Jinfeng Zhang, Shengrui Xu, Xiaoling Duan, Jing Ning, Yue Hao, Jincheng Zhang, Hong Zhou, Yi Wang, Tangsheng Chen, Kai Zhang, Yachao Zhang, Kui Dang, Zhaoke Bian	2019	52
9	A 1.9 kV/2.61 mΩ·cm2 Lateral GaN Schottky Barrier Diode on Silicon Substrate with Tungsten Anode and Low Turn-On Voltage of 0.35 V IEEE Electron Device Letters ·Tao Zhang, Jincheng Zhang, Hong Zhou, Tangsheng Chen, Kai Zhang, Zhuangzhuang Hu, Zhaoke Bian, Kui Dang, Yi Wang, Li Zhang, Jing Ning, Peijun Ma, Yue Hao	2018	45
10	Impact of Implanted Edge Termination on Vertical β-Ga₂O₃ Schottky Barrier Diodes Under OFF-State Stressing IEEE Transactions on Electron Devices ·Yanni Zhang, Jincheng Zhang, Zhaoqing Feng, Zhuangzhuang Hu, Jiabo Chen, Kui Dang, Qinglong Yan, Pengfei Dong, Hong Zhou, Yue Hao	2020	43
11	Lateral GaN Schottky Barrier Diode for Wireless High-Power Transfer Application With High RF/DC Conversion Efficiency: From Circuit Construction and Device Technologies to System Demonstration IEEE Transactions on Industrial Electronics ·Kui Dang, Jincheng Zhang, Hong Zhou, Shan Yin, Tao Zhang, Jing Ning, Yachao Zhang, Zhaoke Bian, Jiabo Chen, Xiaoling Duan, Shenglei Zhao, Yue Hao	2019	41
12	A 800 V β‐Ga₂O₃ Metal–Oxide–Semiconductor Field‐Effect Transistor with High‐Power Figure of Merit of Over 86.3 MW cm⁻² physica status solidi (a) ·Zhaoqing Feng, Yuncong Cai, Guangshuo Yan, Zhuangzhuang Hu, Kui Dang, Yanni Zhang, Zhijun Lü, Hongjuan Cheng, Xiaozheng Lian, Yongkuan Xu, Chunfu Zhang, Qian Feng, Hong Zhou, Jincheng Zhang, Yue Hao	2019	35
13	High-performance lateral GaN Schottky barrier diode on silicon substrate with low turn-on voltage of 0.31 V, high breakdown voltage of 2.65 kV and high-power figure-of-merit of 2.65 GW cm⁻² Applied Physics Express ·Tao Zhang, Jincheng Zhang, Hong Zhou, Yachao Zhang, Tangsheng Chen, Kai Zhang, Yi Wang, Kui Dang, Zhaoke Bian, Xiaoling Duan, Jing Ning, Shenglei Zhao, Yue Hao	2019	34
14	A Graph Route-Based Superframe Scheduling Scheme in WirelessHART Mesh Networks for High Robustness Wireless Personal Communications ·Kui Dang, Jizhong Shen, Li-Da Dong, Yongxiang Xia	2012	27
15	Demonstration of the β-Ga₂O₃ MOS-JFETs With Suppressed Gate Leakage Current and Large Gate Swing IEEE Electron Device Letters ·Chenlu Wang, Qinglong Yan, Chunxu Su, Sami Alghamdi, Emad Ghandourah, Zhihong Liu, Xin Feng, Weihang Zhang, Kui Dang, Yingmin Wang, Jian Wang, Jincheng Zhang, Hong Zhou, Yue Hao	2023	25
16	AlGaN-Channel Gate Injection Transistor on Silicon Substrate With Adjustable 4–7-V Threshold Voltage and 1.3-kV Breakdown Voltage IEEE Electron Device Letters ·Li Zhang, Hong Zhou, Weihang Zhang, Kui Dang, Tao Zhang, Peijun Ma, Xiaohua Ma, Jincheng Zhang, Yue Hao	2018	23
17	Leakage mechanism of quasi-vertical GaN Schottky barrier diodes with ultra-low turn-on voltage Applied Physics Express ·Zhaoke Bian, Tao Zhang, Jincheng Zhang, Shenglei Zhao, Hong Zhou, JunShuai Xue, Xiaoling Duan, Yachao Zhang, Jiabo Chen, Kui Dang, Jing Ning, Yue Hao	2019	22
18	Proposal and Simulation of Ga₂O₃MOSFET With PN Heterojunction Structure for High-Performance E-Mode Operation IEEE Transactions on Electron Devices ·Weina Lei, Kui Dang, Hong Zhou, Jincheng Zhang, Chenlu Wang, Qian Xin, Sami Alghamdi, Zhihong Liu, Qian Feng, Rujun Sun, Chunfu Zhang, Yue Hao	2022	18
19	Low turn-on voltage and 2.3 kV β -Ga2O3 heterojunction barrier Schottky diodes with Mo anode Applied Physics Letters ·Chunxu Su, Hong Zhou, Kun Zhang, Chenlu Wang, Sihan Sun, Hehe Gong, Jiandong Ye, Zhihong Liu, Kui Dang, Zheyuan Hu, Xiaodong Zhang, Jie Wei, Xiaorong Luo, Jincheng Zhang, Rong Zhang, Yue Hao	2024	16
20	GaN High-Electron-Mobility-Transistor on Free- Standing GaN Substrate With Low Contact Resistance and State-of-the-Art f_T × L_G Value IEEE Transactions on Electron Devices ·Hanghai Du, Jincheng Zhang, Hong Zhou, Zhihong Liu, Tao Zhang, Kui Dang, Yanni Zhang, Weihang Zhang, Yachao Zhang, Yue Hao	2022	13

About Kui Dang

Kui Dang is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, Materials Chemistry and Renewable Energy, Sustainability and the Environment, having authored 38 papers that have together received 1.5k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (23 papers), Ga2O3 and related materials (22 papers), ZnO doping and properties (14 papers), Electronic and Structural Properties of Oxides (7 papers), Energy Harvesting in Wireless Networks (7 papers), Wireless Power Transfer Systems (6 papers), Semiconductor materials and devices (5 papers) and Silicon Carbide Semiconductor Technologies (5 papers). The work is most often cited by research in Electronic, Optical and Magnetic Materials (1.2k citations), Condensed Matter Physics (423 citations), Renewable Energy, Sustainability and the Environment (540 citations), Materials Chemistry (1.0k citations) and Electrical and Electronic Engineering (543 citations). Kui Dang has collaborated with scholars based in China, Saudi Arabia and United States. Frequent co-authors include Jincheng Zhang, Hong Zhou, Yue Hao, Yanni Zhang, Qinglong Yan, Zhihong Liu, Pengfei Dong, Yue Hao, Zhaoqing Feng and Qian Feng. Their work appears in journals such as IEEE Electron Device Letters, Applied Physics Letters, IEEE Transactions on Electron Devices, Applied Physics Express and IEEE Journal of the Electron Devices Society.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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