P. Murugapandiyan

587 total citations
40 papers, 379 citations indexed

About

P. Murugapandiyan is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, P. Murugapandiyan has authored 40 papers receiving a total of 379 indexed citations (citations by other indexed papers that have themselves been cited), including 35 papers in Condensed Matter Physics, 29 papers in Electrical and Electronic Engineering and 21 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in P. Murugapandiyan's work include GaN-based semiconductor devices and materials (35 papers), Ga2O3 and related materials (21 papers) and Radio Frequency Integrated Circuit Design (14 papers). P. Murugapandiyan is often cited by papers focused on GaN-based semiconductor devices and materials (35 papers), Ga2O3 and related materials (21 papers) and Radio Frequency Integrated Circuit Design (14 papers). P. Murugapandiyan collaborates with scholars based in India, Botswana and Nigeria. P. Murugapandiyan's co-authors include J. William, A.S. Augustine Fletcher, J. Ajayan, D. Nirmal, A. Mohanbabu, L. Arivazhagan, K. Meenakshi Sundaram, Shubham Tayal, Sandip Bhattacharya and P. Eswaran and has published in prestigious journals such as Journal of Materials Science, Materials Science and Engineering B and Journal of Electronic Materials.

In The Last Decade

P. Murugapandiyan

34 papers receiving 363 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
P. Murugapandiyan India 12 284 254 121 84 67 40 379
Tyler Flack United States 3 221 0.8× 248 1.0× 122 1.0× 108 1.3× 49 0.7× 7 342
Zhaoke Bian China 11 321 1.1× 319 1.3× 182 1.5× 51 0.6× 96 1.4× 16 400
Yuuki Enatsu Japan 10 307 1.1× 436 1.7× 209 1.7× 108 1.3× 59 0.9× 14 461
Stefan Moench Germany 12 292 1.0× 266 1.0× 65 0.5× 40 0.5× 35 0.5× 38 347
Giorgia Longobardi United Kingdom 12 436 1.5× 449 1.8× 169 1.4× 109 1.3× 99 1.5× 34 546
Noboru Negoro Japan 11 319 1.1× 194 0.8× 75 0.6× 50 0.6× 70 1.0× 28 361
Cliff Drowley United States 11 340 1.2× 312 1.2× 155 1.3× 41 0.5× 37 0.6× 14 400
Zhe Cheng China 12 173 0.6× 179 0.7× 85 0.7× 78 0.9× 72 1.1× 37 289
L. I. Pomortseva Russia 8 283 1.0× 203 0.8× 72 0.6× 90 1.1× 159 2.4× 11 393
Tianli Duan China 9 237 0.8× 199 0.8× 126 1.0× 105 1.3× 38 0.6× 20 337

Countries citing papers authored by P. Murugapandiyan

Since Specialization
Citations

This map shows the geographic impact of P. Murugapandiyan's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P. Murugapandiyan with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P. Murugapandiyan more than expected).

Fields of papers citing papers by P. Murugapandiyan

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P. Murugapandiyan. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P. Murugapandiyan. The network helps show where P. Murugapandiyan may publish in the future.

Co-authorship network of co-authors of P. Murugapandiyan

This figure shows the co-authorship network connecting the top 25 collaborators of P. Murugapandiyan. A scholar is included among the top collaborators of P. Murugapandiyan based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with P. Murugapandiyan. P. Murugapandiyan is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Ravi, S., et al.. (2025). Lattice-matched InAlN/GaN high-electron-mobility transistors (HEMTs). Journal of Materials Science. 60(30). 12607–12661.
2.
Thangam, Ramar, et al.. (2025). Ultra-scaled 55 nm InAlN/InGaN/GaN/AlGaN HEMT on β-Ga2O3 substrate: A TCAD-Based performance analysis for high-frequency power applications. Micro and Nanostructures. 204. 208169–208169. 3 indexed citations
3.
Murugapandiyan, P., et al.. (2025). Recent advancement in ScAlN/GaN high electron mobility transistors: Materials, properties, and device performance. Materials Science in Semiconductor Processing. 193. 109509–109509. 4 indexed citations
4.
Murugapandiyan, P., et al.. (2025). Advancing the frontiers of N-polar GaN HEMT technology: materials, architectures, and applications in RF and power electronics. Materials Science in Semiconductor Processing. 199. 109874–109874.
5.
Murugapandiyan, P., et al.. (2025). Recent advancement in β-Ga2O3 MOSFETs: From material growth to device architectures for high-power electronics. Microelectronic Engineering. 299. 112359–112359.
6.
7.
Murugapandiyan, P., et al.. (2024). Investigate AlN/GaN HEMT performance for future RF and high voltage switching applications. 1–6. 1 indexed citations
8.
Murugapandiyan, P., et al.. (2024). Simulation-Based DC and RF Performance Analysis of an Enhancement-Mode T-Gate Al0.15Ga0.85N/GaN/Al0.07Ga0.93N/GaN/Al0.05Ga0.95N MIS-HEMT Device on a GaN Substrate. Journal of Electronic Materials. 53(9). 5555–5565. 1 indexed citations
9.
Murugapandiyan, P., et al.. (2024). Enhancement Mode AlGaN/GaN MISHEMT on Ultra-Wide Band Gap β-Ga2O3 Substrate for RF and Power Electronics. Journal of Electronic Materials. 53(6). 2973–2987. 4 indexed citations
10.
Murugapandiyan, P., et al.. (2024). Comparative Study of AlGaN/InGaN/β-Ga2O3 and InAlN/InGaN/β-Ga2O3 HEMTs for Enhanced RF Linearity. Journal of Electronic Materials. 54(3). 2340–2354. 6 indexed citations
11.
12.
Murugapandiyan, P., et al.. (2023). Design and analysis of normally-off GaN-HEMT using β-Ga2O3 buffer for low-loss power converter applications. Micro and Nanostructures. 182. 207643–207643. 10 indexed citations
13.
Murugapandiyan, P., et al.. (2023). A comparative analysis of GaN and InGaN/GaN coupling channel HEMTs on silicon carbide substrate for high linear RF applications. Micro and Nanostructures. 177. 207545–207545. 9 indexed citations
14.
Eswaran, P., et al.. (2022). Ultra‐wide bandgap Al 0. 1 Ga 0 . 9 N double channel HEMT for RF applications. International Journal of RF and Microwave Computer-Aided Engineering. 32(11). 7 indexed citations
15.
Ravi, S., et al.. (2022). UWBG AlN/β-Ga2O3 HEMT on Silicon Carbide Substrate for Low Loss Portable Power Converters and RF Applications. Silicon. 14(17). 11079–11087. 15 indexed citations
16.
Ajayan, J., D. Nirmal, Shubham Tayal, et al.. (2021). Nanosheet field effect transistors-A next generation device to keep Moore's law alive: An intensive study. Microelectronics Journal. 114. 105141–105141. 77 indexed citations
17.
Murugapandiyan, P., et al.. (2020). Breakdown voltage enhancement of gate field plate Al0.295Ga0.705N/GaN HEMTs. International Journal of Electronics. 108(8). 1273–1287. 8 indexed citations
18.
Murugapandiyan, P., et al.. (2020). Performance analysis of HfO2/InAlN/AlN/GaN HEMT with AlN buffer layer for high power microwave applications. Journal of Science Advanced Materials and Devices. 5(2). 192–198. 23 indexed citations
19.
Murugapandiyan, P., et al.. (2019). Investigation of Quaternary Barrier InAlGaN/GaN/AlGaN Double-Heterojunction High-Electron-Mobility Transistors (HEMTs) for High-Speed and High-Power Applications. Journal of Electronic Materials. 49(1). 524–529. 12 indexed citations
20.
Murugapandiyan, P., et al.. (2017). DC and microwave characteristics of 20 nm T-gate InAlN/GaN high electron mobility transistor for high power RF applications. Superlattices and Microstructures. 109. 725–734. 12 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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