Changhwan Shin

4.0k total citations
194 papers, 3.1k citations indexed

About

Changhwan Shin is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Biomedical Engineering. According to data from OpenAlex, Changhwan Shin has authored 194 papers receiving a total of 3.1k indexed citations (citations by other indexed papers that have themselves been cited), including 182 papers in Electrical and Electronic Engineering, 47 papers in Materials Chemistry and 20 papers in Biomedical Engineering. Recurrent topics in Changhwan Shin's work include Semiconductor materials and devices (143 papers), Advancements in Semiconductor Devices and Circuit Design (94 papers) and Ferroelectric and Negative Capacitance Devices (94 papers). Changhwan Shin is often cited by papers focused on Semiconductor materials and devices (143 papers), Advancements in Semiconductor Devices and Circuit Design (94 papers) and Ferroelectric and Negative Capacitance Devices (94 papers). Changhwan Shin collaborates with scholars based in South Korea, United States and Japan. Changhwan Shin's co-authors include Jaesung Jo, Eunah Ko, Tsu‐Jae King Liu, Jung‐Dong Park, Hyohyun Nam, Hyunjae Lee, Jaemin Shin, Xin Sun, Hyun‐Yong Yu and Nattapol Damrongplasit and has published in prestigious journals such as SHILAP Revista de lepidopterología, Nano Letters and ACS Nano.

In The Last Decade

Changhwan Shin

179 papers receiving 3.0k citations

Peers

Changhwan Shin
Theresia Knobloch Austria
Yu. Yu. Illarionov Austria
Angada B. Sachid United States
Gregory Pitner United States
Huaxiang Yin China
Jinseong Heo South Korea
Wei Cao United States
Ashish Verma Penumatcha United States
Connor J. McClellan United States
Chenguang Qiu China
Theresia Knobloch Austria
Changhwan Shin
Citations per year, relative to Changhwan Shin Changhwan Shin (= 1×) peers Theresia Knobloch

Countries citing papers authored by Changhwan Shin

Since Specialization
Citations

This map shows the geographic impact of Changhwan Shin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Changhwan Shin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Changhwan Shin more than expected).

Fields of papers citing papers by Changhwan Shin

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Changhwan Shin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Changhwan Shin. The network helps show where Changhwan Shin may publish in the future.

Co-authorship network of co-authors of Changhwan Shin

This figure shows the co-authorship network connecting the top 25 collaborators of Changhwan Shin. A scholar is included among the top collaborators of Changhwan Shin based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Changhwan Shin. Changhwan Shin is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Yoon, Seokchan, et al.. (2025). Study of 3-D Line Edge Roughness (LER) in Vertical Channel Array Transistor for DRAM. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 44(9). 3571–3580.
2.
Yoon, Seokchan, et al.. (2025). Device Design Guidelines to Boost Up AC Performance of CFET (Complementary Field-Effect-Transistor)-Based Inverter. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 44(8). 3189–3196.
3.
4.
Choi, Y., et al.. (2024). Oxygen reservoir effect of Tungsten trioxide electrode on endurance performance of ferroelectric capacitors for FeRAM applications. Scientific Reports. 14(1). 28912–28912. 6 indexed citations
5.
Kim, Hyochul, et al.. (2024). Development of a Multi-Component Waterproof Type Force Sensor Devised with Column Elements Under Eccentric Load. Journal of the Society of Naval Architects of Korea. 61(3). 200–207.
6.
Shin, Changhwan, et al.. (2024). Self‐Healing Magnetic Field‐Assisted Threshold Switching Device Utilizing Dual Field‐Driven Filamentary Physics. Advanced Electronic Materials. 10(11). 1 indexed citations
7.
Shin, Changhwan, et al.. (2024). Sub-Boltzmann Switching, Hysteresis-Free Charge Modulated Negative Differential Resistance FinFET. ACS Nano. 18(39). 26975–26985. 1 indexed citations
8.
Shin, Jaemin, et al.. (2022). Impact of Chamber/Annealing Temperature on the Endurance Characteristic of Zr:HfO2 Ferroelectric Capacitor. Sensors. 22(11). 4087–4087. 27 indexed citations
9.
10.
Park, Tae‐Eon, et al.. (2021). Prediction Model for Random Variation in FinFET Induced by Line-Edge-Roughness (LER). Electronics. 10(4). 455–455. 8 indexed citations
11.
Shin, Jaemin, et al.. (2020). Impact of depolarization electric-field and charge trapping on the coercive voltage of an Si:HfO 2 -based ferroelectric capacitor. Semiconductor Science and Technology. 36(1). 15005–15005. 11 indexed citations
12.
Choe, Gihun & Changhwan Shin. (2019). Impact of negative capacitance on the energy-delay property of an electromechanical relay. Japanese Journal of Applied Physics. 58(5). 51003–51003. 4 indexed citations
13.
Shin, Changhwan, et al.. (2019). Study of work-function variation in stacked multiple-channel-structure device. Semiconductor Science and Technology. 34(12). 125003–125003. 1 indexed citations
14.
Shin, Jaemin & Changhwan Shin. (2019). DIBL improvement in hysteresis-free and ferroelectric-gated FinFETs. Semiconductor Science and Technology. 34(6). 65001–65001. 2 indexed citations
15.
Choi, Hyunwoo, June Park, Jae Won Shim, & Changhwan Shin. (2018). Negative quantum capacitance effect from Bi2Te1.5Se1.5 with frequency dependent capacitance of polyvinyl alcohol (PVA) film in MOS structure. Applied Surface Science. 463. 1046–1050. 5 indexed citations
16.
Shin, Jaemin, Eunah Ko, June Park, et al.. (2018). Super steep-switching (SS ≈ 2 mV/decade) phase-FinFET with Pb(Zr0.52Ti0.48)O3 threshold switching device. Applied Physics Letters. 113(10). 8 indexed citations
17.
Shin, Jaemin, Eunah Ko, & Changhwan Shin. (2017). Analysis on the Operation of Negative Differential Resistance FinFET With Pb(Zr0.52Ti0.48)O3 Threshold Selector. IEEE Transactions on Electron Devices. 65(1). 19–22. 12 indexed citations
18.
Lee, Hyunjae, Youngki Yoon, & Changhwan Shin. (2017). Current-Voltage Model for Negative Capacitance Field-Effect Transistors. IEEE Electron Device Letters. 38(5). 669–672. 33 indexed citations
19.
Jo, Jaesung, et al.. (2017). Transconductance Amplification by the Negative Capacitance in Ferroelectric-Gated P3HT Thin-Film Transistor. IEEE Transactions on Electron Devices. 64(12). 4974–4979. 10 indexed citations
20.
Shin, Changhwan, et al.. (2016). Threshold voltage variation-immune FinFET design with metal-interlayer-semiconductor source/drain structure. Current Applied Physics. 16(6). 618–622. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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