A. A. Baski

4.0k total citations
102 papers, 3.5k citations indexed

About

A. A. Baski is a scholar working on Atomic and Molecular Physics, and Optics, Condensed Matter Physics and Electrical and Electronic Engineering. According to data from OpenAlex, A. A. Baski has authored 102 papers receiving a total of 3.5k indexed citations (citations by other indexed papers that have themselves been cited), including 60 papers in Atomic and Molecular Physics, and Optics, 56 papers in Condensed Matter Physics and 34 papers in Electrical and Electronic Engineering. Recurrent topics in A. A. Baski's work include GaN-based semiconductor devices and materials (52 papers), Surface and Thin Film Phenomena (32 papers) and Ga2O3 and related materials (23 papers). A. A. Baski is often cited by papers focused on GaN-based semiconductor devices and materials (52 papers), Surface and Thin Film Phenomena (32 papers) and Ga2O3 and related materials (23 papers). A. A. Baski collaborates with scholars based in United States, Germany and Italy. A. A. Baski's co-authors include J. Nogami, C. F. Quate, L. J. Whitman, Steven C. Erwin, C. F. Quate, M. A. Reshchikov, K. M. Jones, Harald Fuchs, H. Morkoç̌ and H. Morkoç and has published in prestigious journals such as Science, Physical Review Letters and Nano Letters.

In The Last Decade

A. A. Baski

102 papers receiving 3.4k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
A. A. Baski United States	34	2.2k	1.3k	1.1k	1.1k	712	102	3.5k
D. Bolmont France	30	2.2k 1.0×	1.6k 1.2×	1.1k 1.0×	454 0.4×	433 0.6×	200	3.3k
J. M. Van Hove United States	29	1.1k 0.5×	1.5k 1.1×	1.0k 1.0×	2.3k 2.1×	437 0.6×	70	3.1k
Masakazu Ichikawa Japan	37	2.7k 1.2×	2.8k 2.1×	2.0k 1.9×	622 0.6×	1.0k 1.4×	259	4.8k
G. Gewinner France	30	2.3k 1.1×	748 0.6×	836 0.8×	377 0.4×	402 0.6×	151	2.8k
R. D. Bringans United States	32	2.8k 1.3×	2.4k 1.9×	1.2k 1.1×	460 0.4×	564 0.8×	105	4.3k
J. Nogami United States	37	3.4k 1.6×	1.2k 0.9×	815 0.8×	513 0.5×	916 1.3×	120	3.9k
Jean Jordan‐Sweet United States	36	1.6k 0.8×	2.5k 1.9×	2.2k 2.0×	400 0.4×	594 0.8×	166	4.1k
Ph. Ebert Germany	31	1.8k 0.8×	1.3k 1.0×	1.3k 1.2×	543 0.5×	407 0.6×	147	2.9k
R. Pinchaux France	29	2.2k 1.0×	866 0.7×	1.2k 1.1×	446 0.4×	309 0.4×	84	3.1k
S. D. Hersee United States	31	1.2k 0.6×	1.7k 1.3×	1.2k 1.2×	1.6k 1.5×	838 1.2×	99	3.1k

Countries citing papers authored by A. A. Baski

Since Specialization

Citations

This map shows the geographic impact of A. A. Baski's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. A. Baski with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. A. Baski more than expected).

Fields of papers citing papers by A. A. Baski

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. A. Baski. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. A. Baski. The network helps show where A. A. Baski may publish in the future.

Co-authorship network of co-authors of A. A. Baski

This figure shows the co-authorship network connecting the top 25 collaborators of A. A. Baski. A scholar is included among the top collaborators of A. A. Baski based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. A. Baski. A. A. Baski is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

McNamara, J. D., et al.. (2016). Surface photovoltage studies of p-type AlGaN layers after reactive-ion etching. Journal of Applied Physics. 120(15). 2 indexed citations

Ye, Dexian, et al.. (2012). Highly Efficient Electron Field Emission from Graphene Oxide Sheets Supported by Nickel Nanotip Arrays. Nano Letters. 12(3). 1265–1268. 138 indexed citations

Baski, A. A., et al.. (2009). Fabrication of Sol−Gel Materials with Anisotropic Physical Properties by Photo-Cross-Linking. Chemistry of Materials. 21(10). 2108–2114. 10 indexed citations

Ahmad, Iftikhar, V. Avrutin, H. Morkoç̌, James C. Moore, & A. A. Baski. (2007). Effect of Temperature on the Growth of InAs/GaAs Quantum Dots Grown on a Strained GaAs Layer. Journal of Nanoscience and Nanotechnology. 7(8). 2889–2893. 1 indexed citations

Moore, James C., et al.. (2007). Study of leakage defects on GaN films by conductive atomic force microscopy. Journal of Physics Conference Series. 61. 90–94. 30 indexed citations

Chevtchenko, Serguei, James C. Moore, Ümit Özgür, et al.. (2006). Comparative study of the (0001) and (0001¯) surfaces of ZnO. Applied Physics Letters. 89(18). 52 indexed citations

Moore, James C., et al.. (2006). Conductive atomic force microscopy study of MBE GaN films. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 6121. 61210J–61210J. 4 indexed citations

Doğan, S., et al.. (2004). Investigation of forward and reverse current conduction in GaN films by conductive atomic force microscopy. Applied Physics Letters. 84(21). 4150–4152. 51 indexed citations

Doğan, S., D. Johnstone, Feng Yun, et al.. (2004). The effect of hydrogen etching on 6H-SiC studied by temperature-dependent current-voltage and atomic force microscopy. Applied Physics Letters. 85(9). 1547–1549. 39 indexed citations

10.

Jones, K. M., Paolo Visconti, Feng Yun, A. A. Baski, & H. Morkoç. (2001). Investigation of inversion domains in GaN by electric-force microscopy. Applied Physics Letters. 78(17). 2497–2499. 42 indexed citations

11.

Baski, A. A., K. M. Jones, & Khaled M. Saoud. (2001). STM studies of 1-D noble metal growth on silicon. Ultramicroscopy. 86(1-2). 23–30. 24 indexed citations

12.

Huang, Daming, Paolo Visconti, K. M. Jones, et al.. (2001). Dependence of GaN polarity on the parameters of the buffer layer grown by molecular beam epitaxy. Applied Physics Letters. 78(26). 4145–4147. 61 indexed citations

13.

Jones, K. M., et al.. (1999). Growth of Ag rows on Si(5 5 12). Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 17(4). 1696–1699. 44 indexed citations

14.

Erwin, Steven C., A. A. Baski, & L. J. Whitman. (1996). Structure and Stability ofSi(114)−(2×1). Physical Review Letters. 77(4). 687–690. 70 indexed citations

15.

Baski, A. A. & L. J. Whitman. (1996). Ga-induced restructuring of Si(112) and Si(337). Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 14(2). 992–994. 31 indexed citations

16.

Baski, A. A. & L. J. Whitman. (1995). Quasiperiodic Nanoscale Faceting of High-Index Si Surfaces. Physical Review Letters. 74(6). 956–959. 76 indexed citations

17.

Baski, A. A. & Harald Fuchs. (1994). Epitaxial growth of silver on mica as studied by AFM and STM. Surface Science. 313(3). 275–288. 93 indexed citations

18.

Baski, A. A., J. Nogami, & C. F. Quate. (1991). Indium-induced reconstructions of the Si(100) surface. Physical review. B, Condensed matter. 43(11). 9316–9319. 96 indexed citations

19.

Nogami, J., A. A. Baski, & C. F. Quate. (1990). √3 × √3 →6×6 phase transition on the Au/Si(111) surface. Physical Review Letters. 65(13). 1611–1614. 108 indexed citations

20.

Baski, A. A., J. Nogami, & C. F. Quate. (1990). Si(111)-5×1-Au reconstruction as studied by scanning tunneling microscopy. Physical review. B, Condensed matter. 41(14). 10247–10249. 80 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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