K. Tsuda

2.1k total citations · 1 hit paper
57 papers, 1.7k citations indexed

About

K. Tsuda is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, K. Tsuda has authored 57 papers receiving a total of 1.7k indexed citations (citations by other indexed papers that have themselves been cited), including 55 papers in Electrical and Electronic Engineering, 40 papers in Condensed Matter Physics and 14 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in K. Tsuda's work include GaN-based semiconductor devices and materials (40 papers), Radio Frequency Integrated Circuit Design (28 papers) and Silicon Carbide Semiconductor Technologies (26 papers). K. Tsuda is often cited by papers focused on GaN-based semiconductor devices and materials (40 papers), Radio Frequency Integrated Circuit Design (28 papers) and Silicon Carbide Semiconductor Technologies (26 papers). K. Tsuda collaborates with scholars based in Japan, South Korea and Italy. K. Tsuda's co-authors include Ichiro Omura, Wataru Saito, Yoshiharu Takada, Masahiko Kuraguchi, Masakazu Yamaguchi, Y. Saito, T. Ogura, Yorito Kakiuchi, T. Nitta and N. Iizuka and has published in prestigious journals such as Journal of Applied Physics, IEEE Journal of Solid-State Circuits and IEEE Transactions on Electron Devices.

In The Last Decade

K. Tsuda

54 papers receiving 1.6k citations

Hit Papers

Recessed-gate structure approach toward normally off high... 2006 2026 2012 2019 2006 100 200 300 400
What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

  1. Recessed-gate structure approach toward normally off high-Voltage AlGaN/GaN HEMT for power electronics applications
    2006 459 citations Wataru Saito, Yoshiharu Takada et al. IEEE Transactions on Electron Devices profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
K. Tsuda Japan 20 1.4k 1.4k 611 348 242 57 1.7k
Marianne Germain Belgium 23 1.6k 1.1× 1.3k 0.9× 744 1.2× 366 1.1× 417 1.7× 93 1.8k
Toshihiro Ohki Japan 20 1.1k 0.8× 1.2k 0.9× 463 0.8× 280 0.8× 222 0.9× 96 1.4k
P. Chavarkar United States 12 1.0k 0.7× 929 0.7× 386 0.6× 333 1.0× 203 0.8× 33 1.2k
K. Joshin Japan 24 1.0k 0.7× 1.6k 1.2× 305 0.5× 503 1.4× 197 0.8× 94 1.8k
Nadim Chowdhury United States 17 1.1k 0.8× 1.0k 0.7× 483 0.8× 217 0.6× 239 1.0× 44 1.3k
Bingzheng Yang China 13 444 0.3× 1.2k 0.9× 317 0.5× 242 0.7× 349 1.4× 50 1.4k
Daisuke Ueda Japan 6 931 0.7× 815 0.6× 451 0.7× 148 0.4× 172 0.7× 13 1.1k
W.L. Pribble United States 13 1.3k 0.9× 1.3k 1.0× 344 0.6× 334 1.0× 242 1.0× 21 1.6k
Yasuo Ohno Japan 17 706 0.5× 832 0.6× 240 0.4× 262 0.8× 179 0.7× 90 1.0k
Isabella Rossetto Italy 19 1.3k 0.9× 1.2k 0.9× 447 0.7× 236 0.7× 183 0.8× 49 1.4k

Countries citing papers authored by K. Tsuda

Since Specialization
Citations

This map shows the geographic impact of K. Tsuda's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by K. Tsuda with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites K. Tsuda more than expected).

Fields of papers citing papers by K. Tsuda

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by K. Tsuda. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by K. Tsuda. The network helps show where K. Tsuda may publish in the future.

Co-authorship network of co-authors of K. Tsuda

This figure shows the co-authorship network connecting the top 25 collaborators of K. Tsuda. A scholar is included among the top collaborators of K. Tsuda based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with K. Tsuda. K. Tsuda is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Kajiwara, Y., et al.. (2016). 3.2 mΩcm2 enhancement‐mode GaN MOSFETs with breakdown voltage of 800 V. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 13(5-6). 332–335. 8 indexed citations
2.
Takada, Yoshiharu, et al.. (2013). Over 550 V breakdown voltage of InAlN/GaN HEMT on Si. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 10(5). 824–826. 13 indexed citations
3.
Kawasaki, H., et al.. (2011). Developing GaN HEMTs for Ka-Band with 20W. 110(358). 61–64. 2 indexed citations
4.
Takagi, K, et al.. (2011). GaN HEMTs with pre-match for Ka-band with 18W. 2011 IEEE MTT-S International Microwave Symposium. 1–4. 6 indexed citations
5.
Matsushita, Kazunobu, Hideki Sakurai, K Takagi, et al.. (2011). Effects of via layout on AlGaN/GaN HEMTs at Ka-band. 3 indexed citations
6.
Takada, Yoshiharu, et al.. (2011). Numerical analysis of short‐gate GaN HEMTs with Fe‐doped buffer layers. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 9(2). 361–364. 6 indexed citations
7.
Takagi, K, et al.. (2010). Developing GaN HEMTs for Ka-Band with 20W. 1–4. 9 indexed citations
8.
Sakurai, Hiroyuki, et al.. (2009). Influence of SiC Substrate Misorientation on AlGaN/GaN HEMTs Performance. IEICE Technical Report; IEICE Tech. Rep.. 109(81). 69–72. 2 indexed citations
9.
Saito, Wataru, Masahiko Kuraguchi, Yoshiharu Takada, et al.. (2009). Effect of Buffer Layer Structure on Drain Leakage Current and Current Collapse Phenomena in High-Voltage GaN-HEMTs. IEEE Transactions on Electron Devices. 34 indexed citations
10.
Saito, Wataru, et al.. (2008). Demonstration of resonant inverter circuit for electrodeless fluorescent lamps using high voltage GaN-HEMT. PESC record. 3324–3329. 9 indexed citations
11.
Matsushita, Kazunobu, et al.. (2007). Reliability Study of AlGaN/GaN HEMTs Device. IEICE Technical Report; IEICE Tech. Rep.. 107(319). 23–26. 4 indexed citations
12.
Saito, Wataru, Ichiro Omura, & K. Tsuda. (2007). High-voltage GaN-HEMTs for power electronics applications and current collapse phenomena under high applied voltage. 209–212. 3 indexed citations
13.
Saito, Wataru, et al.. (2006). High Voltage and High Switching Frequency Power-Supplies using a GaN-HEMT. 253–256. 9 indexed citations
14.
Saito, Wataru, Yoshiharu Takada, Masahiko Kuraguchi, K. Tsuda, & Ichiro Omura. (2006). Recessed-gate structure approach toward normally off high-Voltage AlGaN/GaN HEMT for power electronics applications. IEEE Transactions on Electron Devices. 53(2). 356–362. 459 indexed citations breakdown →
15.
Takada, Yoshiharu, Masahiko Kuraguchi, Takuma Suzuki, et al.. (2005). C-band AlGaN/GaN HEMTs with 170W Output Power. IEICE Technical Report; IEICE Tech. Rep.. 105(325). 39–42. 9 indexed citations
16.
17.
18.
Kuriyama, Y., et al.. (1991). Ultrahigh-speed heterojunction bipolar transistor multiplexer/demultiplexer ICs. IEEE Journal of Solid-State Circuits. 26(6). 876–879. 5 indexed citations
19.
Iizuka, N., et al.. (1988). AlGaAs/GaAs HBTs fabricated by a self-alignment technology using polyimide for electrode separation. IEEE Electron Device Letters. 9(11). 598–600. 23 indexed citations
20.
Oowaki, Y., Kenji Numata, Kenji Tsuchiya, et al.. (1987). A sub-10-ns 16×16 multiplier using 0.6-μm CMOS technology. IEEE Journal of Solid-State Circuits. 22(5). 762–767. 16 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Breakdown of academic impact, for papers by Marianne Germain Breakdown of academic impact, for papers by Toshihiro Ohki Breakdown of academic impact, for papers by P. Chavarkar Breakdown of academic impact, for papers by K. Joshin Breakdown of academic impact, for papers by Nadim Chowdhury Breakdown of academic impact, for papers by Bingzheng Yang Breakdown of academic impact, for papers by Daisuke Ueda Breakdown of academic impact, for papers by W.L. Pribble Breakdown of academic impact, for papers by Yasuo Ohno Breakdown of academic impact, for papers by Isabella Rossetto
Rankless by CCL
2026