Chanyoung Yoo

516 total citations
27 papers, 417 citations indexed

About

Chanyoung Yoo is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Chanyoung Yoo has authored 27 papers receiving a total of 417 indexed citations (citations by other indexed papers that have themselves been cited), including 26 papers in Electrical and Electronic Engineering, 23 papers in Materials Chemistry and 4 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Chanyoung Yoo's work include Phase-change materials and chalcogenides (17 papers), Chalcogenide Semiconductor Thin Films (12 papers) and Advanced Memory and Neural Computing (9 papers). Chanyoung Yoo is often cited by papers focused on Phase-change materials and chalcogenides (17 papers), Chalcogenide Semiconductor Thin Films (12 papers) and Advanced Memory and Neural Computing (9 papers). Chanyoung Yoo collaborates with scholars based in South Korea, United States and Germany. Chanyoung Yoo's co-authors include Cheol Seong Hwang, Woohyun Kim, Youn‐Kyoung Lee, Jeong Woo Jeon, Sijung Yoo, Taeyong Eom, Seung Dam Hyun, Min Hyuk Park, Young Hwan Lee and Hyeon Woo Park and has published in prestigious journals such as Advanced Materials, Nano Letters and Chemistry of Materials.

In The Last Decade

Chanyoung Yoo

24 papers receiving 398 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Chanyoung Yoo South Korea 13 382 323 50 32 31 27 417
David Guzman United States 7 268 0.7× 166 0.5× 46 0.9× 34 1.1× 19 0.6× 7 333
Hei Man Yau Hong Kong 5 215 0.6× 295 0.9× 29 0.6× 22 0.7× 32 1.0× 5 389
Anthonin Verdy France 9 293 0.8× 264 0.8× 86 1.7× 31 1.0× 19 0.6× 15 327
Beitao Ren Hong Kong 10 306 0.8× 184 0.6× 69 1.4× 27 0.8× 49 1.6× 15 357
Andrei A. Gismatulin Russia 13 352 0.9× 163 0.5× 54 1.1× 25 0.8× 18 0.6× 46 392
D. Kau United States 6 246 0.6× 211 0.7× 88 1.8× 17 0.5× 32 1.0× 9 292
Takahiro Morikawa Japan 12 329 0.9× 239 0.7× 88 1.8× 24 0.8× 33 1.1× 33 372
Sanghun Jeon South Korea 8 298 0.8× 173 0.5× 67 1.3× 13 0.4× 47 1.5× 23 327
Ching‐Chiun Wang Taiwan 12 599 1.6× 253 0.8× 121 2.4× 17 0.5× 36 1.2× 33 632
Nam-Kwang Cho South Korea 13 306 0.8× 197 0.6× 84 1.7× 19 0.6× 40 1.3× 18 348

Countries citing papers authored by Chanyoung Yoo

Since Specialization
Citations

This map shows the geographic impact of Chanyoung Yoo's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Chanyoung Yoo with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Chanyoung Yoo more than expected).

Fields of papers citing papers by Chanyoung Yoo

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Chanyoung Yoo. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Chanyoung Yoo. The network helps show where Chanyoung Yoo may publish in the future.

Co-authorship network of co-authors of Chanyoung Yoo

This figure shows the co-authorship network connecting the top 25 collaborators of Chanyoung Yoo. A scholar is included among the top collaborators of Chanyoung Yoo based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Chanyoung Yoo. Chanyoung Yoo is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Jeon, Jeong Woo, Woohyun Kim, Wontae Noh, et al.. (2025). Low-temperature atomic layer deposition of metastable MnTe films for phase change memory devices. Journal of Materials Chemistry C. 13(13). 6762–6771.
2.
Cho, Hyeon, Chanyoung Yoo, & Bonggeun Shong. (2025). Influence of Ge precursors toward atomic layer deposition of germanium tellurides: A DFT study. Vacuum. 235. 114142–114142.
3.
Yoo, Chanyoung, et al.. (2024). Atomic Layer Deposition of WO3-Doped In2O3 for Reliable and Scalable BEOL-Compatible Transistors. Nano Letters. 24(19). 5737–5745. 13 indexed citations
4.
Jeon, Jeong Woo, Yoon Ho Jang, Soo Hyung Lee, et al.. (2024). Vertically Stackable Ovonic Threshold Switch Oscillator Using Atomic Layer Deposited Ge0.6Se0.4 Film for High-Density Artificial Neural Networks. ACS Applied Materials & Interfaces. 16(12). 15032–15042. 5 indexed citations
5.
Lin, Qing, Nathaniel S. Safron, Donglai Zhong, et al.. (2024). Enhancement-Mode Atomic Layer Deposited W-Doped In2O3 Transistor at 55 nm Channel Length by Oxide Capping Layer with Improved Stability. 1–4. 2 indexed citations
6.
Jeon, Jeong Woo, Woohyun Kim, Wonho Choi, et al.. (2024). Atomic layer deposition of Sn-doped germanium diselenide for an As-free Ovonic threshold switch with low off-current. Dalton Transactions. 54(2). 492–502. 1 indexed citations
7.
Huang, Fei, Zhouchangwan Yu, Chanyoung Yoo, et al.. (2023). Enhanced Switching Reliability of Hf0.5Zr0.5O2 Ferroelectric Films Induced by Interface Engineering. ACS Applied Materials & Interfaces. 15(43). 50246–50253. 12 indexed citations
8.
Yoo, Chanyoung, et al.. (2023). A Review of Advances in Deposition Methods and Material Properties of Superlattice Phase-Change Memory. ACS Applied Electronic Materials. 5(11). 5794–5808. 4 indexed citations
9.
10.
Choi, Wonho, Ho Kim, Chanyoung Yoo, et al.. (2023). Parallel Integration of Nanoscale Atomic Layer Deposited Ge2Sb2Te5 Phase-Change Memory with an Indium Gallium Zinc Oxide Thin-Film Transistor. ACS Applied Electronic Materials. 5(3). 1721–1729. 3 indexed citations
11.
Lee, Youn‐Kyoung, Chanyoung Yoo, Woohyun Kim, Jeong Woo Jeon, & Cheol Seong Hwang. (2021). Atomic layer deposition of chalcogenides for next-generation phase change memory. Journal of Materials Chemistry C. 9(11). 3708–3725. 38 indexed citations
12.
Jeon, Jeong Woo, Chanyoung Yoo, Woohyun Kim, et al.. (2021). Atomic layer deposition of SnSex thin films using Sn(N(CH3)2)4 and Se(Si(CH3)3)2 with NH3 co-injection. Dalton Transactions. 51(2). 594–601. 6 indexed citations
13.
14.
Im, In Hyuk, Chanyoung Yoo, Yong Kim, et al.. (2019). Effect of Electrode Material on the Crystallization of GeTe Grown by Atomic Layer Deposition for Phase Change Random Access Memory. Micromachines. 10(5). 281–281. 9 indexed citations
15.
Kim, Woohyun, Chanyoung Yoo, Jeong Woo Jeon, et al.. (2019). Electroforming-Free Bipolar Resistive Switching in GeSe Thin Films with a Ti-Containing Electrode. ACS Applied Materials & Interfaces. 11(42). 38910–38920. 18 indexed citations
16.
Yoo, Chanyoung, Woohyun Kim, Jeong Woo Jeon, et al.. (2019). Atomic Layer Deposition of Nanocrystalline-As-Deposited (GeTe)x(Sb2Te3)1–x Films for Endurable Phase Change Memory. Chemistry of Materials. 31(21). 8752–8763. 24 indexed citations
17.
Kim, Woohyun, Sijung Yoo, Chanyoung Yoo, et al.. (2018). Atomic layer deposition of GeSe films using HGeCl3and [(CH3)3Si]2Se with the discrete feeding method for the ovonic threshold switch. Nanotechnology. 29(36). 365202–365202. 24 indexed citations
18.
Lee, Young Hwan, Seung Dam Hyun, Hae Jin Kim, et al.. (2018). Nucleation‐Limited Ferroelectric Orthorhombic Phase Formation in Hf0.5Zr0.5O2 Thin Films. Advanced Electronic Materials. 5(2). 70 indexed citations
19.
Yoo, Sijung, et al.. (2018). Chemical interactions in the atomic layer deposition of Ge–Sb–Se–Te films and their ovonic threshold switching behavior. Journal of Materials Chemistry C. 6(18). 5025–5032. 40 indexed citations
20.
Gwon, Taehong, Ahmed Yousef Mohamed, Chanyoung Yoo, et al.. (2017). Structural Analyses of Phase Stability in Amorphous and Partially Crystallized Ge-Rich GeTe Films Prepared by Atomic Layer Deposition. ACS Applied Materials & Interfaces. 9(47). 41387–41396. 10 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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2026