Zhouchangwan Yu

822 total citations · 1 hit paper
14 papers, 701 citations indexed

About

Zhouchangwan Yu is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Cellular and Molecular Neuroscience. According to data from OpenAlex, Zhouchangwan Yu has authored 14 papers receiving a total of 701 indexed citations (citations by other indexed papers that have themselves been cited), including 13 papers in Electrical and Electronic Engineering, 4 papers in Materials Chemistry and 2 papers in Cellular and Molecular Neuroscience. Recurrent topics in Zhouchangwan Yu's work include Ferroelectric and Negative Capacitance Devices (11 papers), Advanced Memory and Neural Computing (9 papers) and Semiconductor materials and devices (7 papers). Zhouchangwan Yu is often cited by papers focused on Ferroelectric and Negative Capacitance Devices (11 papers), Advanced Memory and Neural Computing (9 papers) and Semiconductor materials and devices (7 papers). Zhouchangwan Yu collaborates with scholars based in United States, Taiwan and South Korea. Zhouchangwan Yu's co-authors include H.‐S. Philip Wong, Yuanyuan Shi, Mario Lanza, Eric Pop, Victoria Chen, Bin Yuan, Xianhu Liang, Haitong Li, Fang Yuan and Fei Hui and has published in prestigious journals such as Applied Physics Letters, ACS Applied Materials & Interfaces and IEEE Electron Device Letters.

In The Last Decade

Zhouchangwan Yu

14 papers receiving 687 citations

Hit Papers

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What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Electronic synapses made of layered two-dimensional materials

2018 555 citations Yuanyuan Shi, Xianhu Liang et al. Nature Electronics profile →

Peers

Countries citing papers authored by Zhouchangwan Yu

Since Specialization

Citations

This map shows the geographic impact of Zhouchangwan Yu's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Zhouchangwan Yu with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Zhouchangwan Yu more than expected).

Fields of papers citing papers by Zhouchangwan Yu

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Zhouchangwan Yu. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Zhouchangwan Yu. The network helps show where Zhouchangwan Yu may publish in the future.

Co-authorship network of co-authors of Zhouchangwan Yu

This figure shows the co-authorship network connecting the top 25 collaborators of Zhouchangwan Yu. A scholar is included among the top collaborators of Zhouchangwan Yu based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Zhouchangwan Yu. Zhouchangwan Yu is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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14 of 14 papers shown

#	Work	Indexed citations
1	Field‐Induced Ferroelectric Phase Evolution During Polarization “Wake‐Up” in Hf_0.5Zr_0.5O₂ Thin Film Capacitors 2023 ·Advanced Electronic Materials ·(unknown), Fei Huang, (unknown), Zhouchangwan Yu, Vivek Thampy, J. D. Baniecki, Wilman Tsai, Paul C. McIntyre	17
2	Mechanism of polarization “Wake-Up” in ferroelectric Hafnia-Zirconia thin films 2023 ·Solid-State Electronics ·(unknown), Fei Huang, (unknown), Zhouchangwan Yu, J. D. Baniecki, Vivek Thampy, Wilman Tsai, Paul C. McIntyre	4
3	Enhanced Switching Reliability of Hf_0.5Zr_0.5O₂ Ferroelectric Films Induced by Interface Engineering 2023 ·ACS Applied Materials & Interfaces ·Fei Huang, (unknown), Zhouchangwan Yu, Chanyoung Yoo, Vivek Thampy, Xiaoqing He, J. D. Baniecki, Wilman Tsai, Andrew C. Meng, Paul C. McIntyre, S.S. Wong	12
4	CeO₂ Doping of Hf_0.5Zr_0.5O₂ Thin Films for High Endurance Ferroelectric Memories 2022 ·Advanced Electronic Materials ·Zhouchangwan Yu, (unknown), (unknown), Yu‐Kai Chang, (unknown), (unknown), Yu‐Chuan Shih, (unknown), Valeri Afanas’ev, Fei Huang, J. D. Baniecki, Apurva Mehta, Chih‐Sheng Chang, H.‐S. Philip Wong, Wilman Tsai, Paul C. McIntyre	11
5	Nanocrystallite Seeding of Metastable Ferroelectric Phase Formation in Atomic Layer-Deposited Hafnia–Zirconia Alloys 2022 ·ACS Applied Materials & Interfaces ·Zhouchangwan Yu, (unknown), Yunzhi Liu, Fei Huang, Apurva Mehta, J. D. Baniecki, Hang Wong, Wilman Tsai, Paul C. McIntyre	10
6	4 Bits/cell Hybrid 1F1R for High Density Embedded Non-Volatile Memory and its Application for Compute in Memory 2022 ·2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) ·(unknown), Fei Huang, (unknown), Zhouchangwan Yu, Qing Lin, Paul C. McIntyre, S.S. Wong, H.‐S. Philip Wong	5
7	Improved gradual resistive switching range and 1000× on/off ratio in HfOx RRAM achieved with a Ge2Sb2Te5 thermal barrier 2022 ·Applied Physics Letters ·Raisul Islam, (unknown), Sanchit Deshmukh, Zhouchangwan Yu, Çağıl Köroğlu, Asir Intisar Khan, (unknown), Krishna C. Saraswat, Eric Pop, H.‐S. Philip Wong	4
8	Measurement of Ferroelectric Properties of Nanometer Scaled Individual Metal/Hf_0.5Zr_0.5O₂/Metal Capacitors 2021 ·IEEE Electron Device Letters ·Fei Huang, M. Passlack, (unknown), Zhouchangwan Yu, Qing Lin, (unknown), Vincent Hou, Paul C. McIntyre, S.S. Wong	6
9	Reduced HfO₂ Resistive Memory Variability by Inserting a Thin SnO₂ as Oxygen Stopping Layer 2021 ·IEEE Electron Device Letters ·(unknown), (unknown), Zhouchangwan Yu, H.‐S. Philip Wong	6
10	High-Peformance BEOL-Compatible Atomic-Layer-Deposited In₂O₃ Fe-FETs Enabled by Channel Length Scaling down to 7 nm: Achieving Performance Enhancement with Large Memory Window of 2.2 V, Long Retention > 10 years and High Endurance > 10⁸ Cycles 2021 ·2021 IEEE International Electron Devices Meeting (IEDM) ·Zehao Lin, Mengwei Si, Yuan-Chun Luo, Xiao Lyu, Adam Charnas, Zhixiang Chen, Zhouchangwan Yu, Wilman Tsai, Paul C. McIntyre, (unknown), (unknown), Shimeng Yu, P. D. Ye	28
11	Sub-0.5 nm Interfacial Dielectric Enables Superior Electrostatics: 65 mV/dec Top-Gated Carbon Nanotube FETs at 15 nm Gate Length 2020 ·Gregory Pitner, Zichen Zhang, Qing Lin, Sheng‐Kai Su, (unknown), (unknown), (unknown), T. Weiß, Zhouchangwan Yu, (unknown), Lain‐Jong Li, Subhasish Mitra, H.‐S. Philip Wong, J. Cai, Andrew C. Kummel, Prabhakar R. Bandaru, M. Passlack	27
12	Potassium Hydroxide Mixed with Lithium Hydroxide: An Advanced Electrolyte for Oxygen Evolution Reaction 2019 ·Solar RRL ·Tingting Han, Yuanyuan Shi, Zhouchangwan Yu, Byungha Shin, Mario Lanza	7
13	Electronic synapses made of layered two-dimensional materials breakdown → 2018 ·Nature Electronics ·Yuanyuan Shi, Xianhu Liang, Bin Yuan, Victoria Chen, Haitong Li, Fei Hui, Zhouchangwan Yu, Fang Yuan, Eric Pop, H.‐S. Philip Wong, Mario Lanza	555
14	High peak power (≥10 mW) quantum cascade superluminescent emitter 2014 ·Applied Physics Letters ·(unknown), Zhouchangwan Yu, Yu Ye, Peter Q. Liu, Xiaojun Wang, Jen-Yu Fan, Mariano Troccoli, Claire Gmachl	9

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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