I. Halidou

645 total citations
41 papers, 570 citations indexed

About

I. Halidou is a scholar working on Materials Chemistry, Condensed Matter Physics and Electrical and Electronic Engineering. According to data from OpenAlex, I. Halidou has authored 41 papers receiving a total of 570 indexed citations (citations by other indexed papers that have themselves been cited), including 30 papers in Materials Chemistry, 28 papers in Condensed Matter Physics and 24 papers in Electrical and Electronic Engineering. Recurrent topics in I. Halidou's work include GaN-based semiconductor devices and materials (28 papers), ZnO doping and properties (26 papers) and Ga2O3 and related materials (14 papers). I. Halidou is often cited by papers focused on GaN-based semiconductor devices and materials (28 papers), ZnO doping and properties (26 papers) and Ga2O3 and related materials (14 papers). I. Halidou collaborates with scholars based in Tunisia, France and Niger. I. Halidou's co-authors include B. El Jani, T. Boufaden, N. Bouguila, M. Kraini, S. Alaya, A. Timoumi, A. Bchetnia, Z. Bougrioua, C. Vázquez‐Vázquez and Michel Ramonda and has published in prestigious journals such as Applied Surface Science, Journal of Alloys and Compounds and Thin Solid Films.

In The Last Decade

I. Halidou

40 papers receiving 564 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
I. Halidou Tunisia	15	381	346	318	157	100	41	570
Soojeong Choi United States	14	298 0.8×	230 0.7×	376 1.2×	293 1.9×	121 1.2×	29	569
Tommy Ive Sweden	13	426 1.1×	252 0.7×	277 0.9×	205 1.3×	205 2.0×	32	615
M. Korytov France	14	311 0.8×	174 0.5×	350 1.1×	267 1.7×	138 1.4×	44	560
D. C. Oh Japan	16	583 1.5×	384 1.1×	258 0.8×	338 2.2×	107 1.1×	59	753
Mingzeng Peng China	15	264 0.7×	286 0.8×	282 0.9×	180 1.1×	90 0.9×	54	504
Vitaly Z. Zubialevich Ireland	14	228 0.6×	192 0.6×	421 1.3×	251 1.6×	155 1.6×	70	552
Xuecheng Wei China	12	443 1.2×	366 1.1×	286 0.9×	173 1.1×	121 1.2×	37	641
H.‐H. Wehmann Germany	16	369 1.0×	305 0.9×	299 0.9×	232 1.5×	190 1.9×	44	653
S. A. Hatfield United Kingdom	11	336 0.9×	233 0.7×	154 0.5×	203 1.3×	101 1.0×	13	469
S. B. Thapa Germany	14	273 0.7×	203 0.6×	368 1.2×	201 1.3×	91 0.9×	26	522

Countries citing papers authored by I. Halidou

Since Specialization

Citations

This map shows the geographic impact of I. Halidou's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by I. Halidou with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites I. Halidou more than expected).

Fields of papers citing papers by I. Halidou

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by I. Halidou. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by I. Halidou. The network helps show where I. Halidou may publish in the future.

Co-authorship network of co-authors of I. Halidou

This figure shows the co-authorship network connecting the top 25 collaborators of I. Halidou. A scholar is included among the top collaborators of I. Halidou based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with I. Halidou. I. Halidou is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Hassan, Abdelrahim H. A., I. Halidou, Sandrine Juillaguet, et al.. (2025). Study of the physical and chemical properties of ZnS thin films synthesized on ZnS nucleation layers by spray pyrolysis. Next Materials. 9. 100968–100968.

Halidou, I., M. Kraini, N. Bouguila, et al.. (2022). Impact of substrate temperature on structural, morphological and optical properties of In2S3 thin films deposited on ITO/glass substrate by spray pyrolysis technique. Indian Journal of Physics. 97(1). 73–84. 4 indexed citations

Bouguila, N., et al.. (2019). Impact of the annealing time on physical properties of sprayed In2S3 thin films. Journal of Materials Science Materials in Electronics. 30(6). 6178–6186. 4 indexed citations

Bouzidi, Mohamed, et al.. (2017). Effect of growth conditions on the Al composition and optical properties of Al x Ga 1−x N layers grown by atmospheric-pressure metal organic vapor phase epitaxy. Thin Solid Films. 630. 2–6. 2 indexed citations

Bouguila, N., M. Kraini, I. Halidou, et al.. (2017). PROPERTIES OF LOW-LEVEL Sn-DOPED In₂S₃FILMS DEPOSITED BY SPRAY PYROLYSIS TECHNIQUE. Surface Review and Letters. 26(1). 1850126–1850126. 4 indexed citations

Bouguila, N., M. Kraini, I. Najeh, et al.. (2015). Investigation of the Physical Properties of Sprayed Nanocrystalline In2S3 Films. Journal of Electronic Materials. 44(11). 4213–4219. 13 indexed citations

Halidou, I., et al.. (2015). Study of Surface and Interface Roughness of GaN-Based Films Using Spectral Reflectance Measurements. Journal of Electronic Materials. 44(10). 3243–3252. 9 indexed citations

Saadallah, F., et al.. (2013). Effect of Si doping on optical and thermal properties of MOVPE GaN thin layers. Optik. 124(23). 6190–6193. 4 indexed citations

Halidou, I., et al.. (2013). Influence of GaN template thickness and morphology on AlxGa1−xN luminescence properties. Optical Materials. 35(5). 988–992. 12 indexed citations

10.

Halidou, I., et al.. (2013). Effect of GaN template thickness and morphology on AlxGa1−xN (0<x<0.2) growth by MOVPE. Applied Surface Science. 280. 660–665. 5 indexed citations

11.

Halidou, I., et al.. (2012). Characterization of low Al content Al_xGa_1−xN epitaxial films grown by atmospheric‐pressure MOVPE. physica status solidi (a). 209(5). 977–983. 17 indexed citations

12.

Bchetnia, A., et al.. (2008). Mosaicity and stress effects on luminescence properties of GaN. physica status solidi (a). 205(8). 2042–2046. 8 indexed citations

13.

Halidou, I., et al.. (2008). Magnesium diffusion profile in GaN grown by MOVPE. Journal of Crystal Growth. 310(14). 3274–3277. 38 indexed citations

14.

Halidou, I., et al.. (2008). Growth temperature effect on MOVPE Si-doped GaN: Thermodynamic modeling. Microelectronics Journal. 40(2). 363–366. 8 indexed citations

15.

Bchetnia, A., et al.. (2007). Effect of thickness on structural and electrical properties of GaN films grown on SiN-treated sapphire. Journal of Crystal Growth. 308(2). 283–289. 27 indexed citations

16.

Halidou, I., et al.. (2007). GaN property evolution at all stages of MOVPE Si/N treatment growth. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 4(1). 129–132. 16 indexed citations

17.

Halidou, I., et al.. (2006). Thermodynamic analysis of Si doping in GaN. Superlattices and Microstructures. 40(4-6). 496–500. 2 indexed citations

18.

Fitouri, H., et al.. (2006). Modeling of laser reflectance evolution during metalorganic vapor phase epitaxy growth of GaN using SiN treatment. Applied Surface Science. 253(1). 258–260. 6 indexed citations

19.

Halidou, I., et al.. (2004). Effect of SiN treatment on GaN epilayer quality. physica status solidi (a). 201(3). 502–508. 27 indexed citations

20.

Halidou, I., T. Boufaden, Ahmed Touhami, A. Rebey, & B. El Jani. (2001). Annealing Effect on GaN Buffer Layer Surface. physica status solidi (a). 184(1). 263–271. 11 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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