I. Halidou

645 citations

41 papers · 570 indexed · h-index 15

Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials 28
Electronic, Optical and Magnetic Materials
- Ga2O3 and related materials 14
Materials Chemistry top 10%
- ZnO doping and properties 26
- Quantum Dots Synthesis And Properties 11
Electrical and Electronic Engineering top 10%
- Chalcogenide Semiconductor Thin Films 12
- Semiconductor materials and devices 7
- Gas Sensing Nanomaterials and Sensors 4
Atomic and Molecular Physics, and Optics
- Semiconductor Quantum Structures and Devices 6

Co-authors: B. El Jani T. Boufaden N. Bouguila M. Kraini S. Alaya A. Timoumi A. Bchetnia Z. Bougrioua
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Materials Chemistry
Journals: Journal of Electronic Materials (5 papers)Journal of Materials Science Materials in Electronics (5 papers)physica status solidi (a) (4 papers)
Partner nations: Tunisia France Niger

In The Last Decade

I. Halidou

40 papers receiving 564 citations

Peers

Countries citing papers authored by I. Halidou

Since Specialization

Citations

This map shows the geographic impact of I. Halidou's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by I. Halidou with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites I. Halidou more than expected).

Fields of papers citing papers by I. Halidou

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by I. Halidou. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by I. Halidou. The network helps show where I. Halidou may publish in the future.

Co-authorship network

The 25 scholars most cited alongside I. Halidou, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with I. Halidou Line = papers co-authored together I. Halidou links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Study of the physical and chemical properties of ZnS thin films synthesized on ZnS nucleation layers by spray pyrolysis Next Materials ·Abdelrahim H. A. Hassan,I. Halidou,段朝芳,Sandrine Juillaguet,O. Briot,Hervé Peyre,N. Bouguila	2025	0
2	Impact of substrate temperature on structural, morphological and optical properties of In2S3 thin films deposited on ITO/glass substrate by spray pyrolysis technique Indian Journal of Physics ·Hiroto Ohkawa,I. Halidou,M. Kraini,N. Bouguila,C. Vázquez‐Vázquez,M. Arturo López‐Quintela,S. Alaya	2022	4
3	Impact of the annealing time on physical properties of sprayed In2S3 thin films Journal of Materials Science Materials in Electronics ·N. Bouguila,M. Kraini,A. Timoumi,Hiroto Ohkawa,I. Halidou,C. Vázquez‐Vázquez	2019	4
4	Effect of growth conditions on the Al composition and optical properties of Al x Ga 1−x N layers grown by atmospheric-pressure metal organic vapor phase epitaxy Thin Solid Films ·LI Yue-b,Mohamed Bouzidi,李喬遠,P W Gilliland,I. Halidou,B. El Jani,Mohammad Khaled Shakfa	2017	2
5	PROPERTIES OF LOW-LEVEL Sn-DOPED In₂S₃FILMS DEPOSITED BY SPRAY PYROLYSIS TECHNIQUE Surface Review and Letters ·N. Bouguila,M. Kraini,Hiroto Ohkawa,I. Halidou,C. Vázquez‐Vázquez,M. Arturo López‐Quintela,S. Alaya	2017	4
6	Investigation of the Physical Properties of Sprayed Nanocrystalline In2S3 Films Journal of Electronic Materials ·N. Bouguila,M. Kraini,I. Najeh,I. Halidou,Emmanuelle Lacaze,H. Bouchriha,H. Bouzouita,S. Alaya	2015	13
7	Study of Surface and Interface Roughness of GaN-Based Films Using Spectral Reflectance Measurements Journal of Electronic Materials ·Orlik Va,Hans Kirchheimer,I. Halidou,B. El Jani	2015	9
8	Effect of Si doping on optical and thermal properties of MOVPE GaN thin layers Optik ·F. Saadallah,Orlik Va,I. Halidou,N. Yacoubi,B. El Jani	2013	4
9	Influence of GaN template thickness and morphology on AlxGa1−xN luminescence properties Optical Materials ·I. Halidou,P W Gilliland,Luu Nguyen,A. Bchetnia,B. El Jani	2013	12
10	Effect of GaN template thickness and morphology on AlxGa1−xN (0<x<0.2) growth by MOVPE Applied Surface Science ·I. Halidou,P W Gilliland,A. Fouzri,Michel Ramonda,B. El Jani	2013	5
11	Characterization of low Al content Al_xGa_1−xN epitaxial films grown by atmospheric‐pressure MOVPE physica status solidi (a) ·P W Gilliland,I. Halidou,Orlik Va,A. Fouzri,A. Bchetnia,B. El Jani	2012	17
12	Mosaicity and stress effects on luminescence properties of GaN physica status solidi (a) ·P W Gilliland,A. Bchetnia,T. A. Lafford,Orlik Va,I. Halidou,Z. Bougrioua,B. El Jani	2008	8
13	Magnesium diffusion profile in GaN grown by MOVPE Journal of Crystal Growth ·Orlik Va,I. Halidou,Z. Bougrioua,T. Boufaden,B. El Jani	2008	38
14	Growth temperature effect on MOVPE Si-doped GaN: Thermodynamic modeling Microelectronics Journal ·P W Gilliland,I. Halidou,Orlik Va,T. Boufaden	2008	8
15	Effect of thickness on structural and electrical properties of GaN films grown on SiN-treated sapphire Journal of Crystal Growth ·A. Bchetnia,P W Gilliland,T. A. Lafford,Orlik Va,I. Halidou,Alberto Trani,B. El Jani	2007	27
16	GaN property evolution at all stages of MOVPE Si/N treatment growth Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·I. Halidou,Orlik Va,H. Fitouri,O.O. Alatise,B. El Jani	2007	16
17	Thermodynamic analysis of Si doping in GaN Superlattices and Microstructures ·I. Halidou,Orlik Va,T. Boufaden,B. El Jani	2006	2
18	Modeling of laser reflectance evolution during metalorganic vapor phase epitaxy growth of GaN using SiN treatment Applied Surface Science ·H. Fitouri,Orlik Va,I. Halidou,T. Boufaden,B. El Jani	2006	6
19	Effect of SiN treatment on GaN epilayer quality physica status solidi (a) ·Orlik Va,I. Halidou,T. Boufaden,B. El Jani,Sandrine Juillaguet,Michel Ramonda	2004	27
20	Annealing Effect on GaN Buffer Layer Surface physica status solidi (a) ·I. Halidou,T. Boufaden,Ahmed Touhami,A. Rebey,B. El Jani	2001	11

About I. Halidou

I. Halidou is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Materials Chemistry, Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics, having authored 41 papers that have together received 570 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (28 papers), ZnO doping and properties (26 papers), Ga2O3 and related materials (14 papers), Chalcogenide Semiconductor Thin Films (12 papers), Quantum Dots Synthesis And Properties (11 papers), Semiconductor materials and devices (7 papers), Semiconductor Quantum Structures and Devices (6 papers) and Gas Sensing Nanomaterials and Sensors (4 papers). The work is most often cited by research in Condensed Matter Physics (318 citations), Electronic, Optical and Magnetic Materials (157 citations), Materials Chemistry (381 citations), Electrical and Electronic Engineering (346 citations) and Atomic and Molecular Physics, and Optics (100 citations). I. Halidou has collaborated with scholars based in Tunisia, France and Niger. Frequent co-authors include B. El Jani, T. Boufaden, N. Bouguila, M. Kraini, S. Alaya, A. Timoumi, A. Bchetnia, Z. Bougrioua, C. Vázquez‐Vázquez and Michel Ramonda. Their work appears in journals such as Journal of Electronic Materials, Journal of Materials Science Materials in Electronics, physica status solidi (a), Superlattices and Microstructures and Applied Surface Science.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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