Shaowen Han

886 total citations
19 papers, 704 citations indexed

About

Shaowen Han is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Shaowen Han has authored 19 papers receiving a total of 704 indexed citations (citations by other indexed papers that have themselves been cited), including 16 papers in Condensed Matter Physics, 16 papers in Electrical and Electronic Engineering and 8 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Shaowen Han's work include GaN-based semiconductor devices and materials (16 papers), Semiconductor materials and devices (9 papers) and Ga2O3 and related materials (8 papers). Shaowen Han is often cited by papers focused on GaN-based semiconductor devices and materials (16 papers), Semiconductor materials and devices (9 papers) and Ga2O3 and related materials (8 papers). Shaowen Han collaborates with scholars based in China, Hong Kong and United States. Shaowen Han's co-authors include Kuang Sheng, Shu Yang, Kevin J. Chen, Rui Li, Chunhua Zhou, Jin Wei, Xinke Wu, Geok Ing Ng, S. Arulkumaran and M. K. Kumar and has published in prestigious journals such as Applied Physics Letters, IEEE Transactions on Power Electronics and Solar Energy.

In The Last Decade

Shaowen Han

17 papers receiving 677 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Shaowen Han China	12	611	530	290	146	118	19	704
N. Dharmarasu Singapore	14	263 0.4×	451 0.9×	174 0.6×	217 1.5×	177 1.5×	67	628
Yaozong Zhong China	17	640 1.0×	484 0.9×	350 1.2×	125 0.9×	168 1.4×	35	707
P. Chen China	12	383 0.6×	276 0.5×	239 0.8×	123 0.8×	232 2.0×	33	530
Izak Baranowski United States	11	342 0.6×	343 0.6×	235 0.8×	116 0.8×	112 0.9×	16	487
Akio Wakejima Japan	18	585 1.0×	676 1.3×	227 0.8×	301 2.1×	181 1.5×	84	855
Masakazu Kanechika Japan	16	781 1.3×	766 1.4×	352 1.2×	149 1.0×	175 1.5×	39	948
C.F. Shen Taiwan	14	454 0.7×	292 0.6×	201 0.7×	146 1.0×	272 2.3×	32	576
Matthew Charles France	13	414 0.7×	396 0.7×	161 0.6×	113 0.8×	137 1.2×	87	547
Silvia H. Chan United States	16	677 1.1×	727 1.4×	380 1.3×	164 1.1×	262 2.2×	40	968
K.P. Lee United States	8	505 0.8×	462 0.9×	209 0.7×	198 1.4×	198 1.7×	17	652

Countries citing papers authored by Shaowen Han

Since Specialization

Citations

This map shows the geographic impact of Shaowen Han's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Shaowen Han with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Shaowen Han more than expected).

Fields of papers citing papers by Shaowen Han

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Shaowen Han. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Shaowen Han. The network helps show where Shaowen Han may publish in the future.

Co-authorship network of co-authors of Shaowen Han

This figure shows the co-authorship network connecting the top 25 collaborators of Shaowen Han. A scholar is included among the top collaborators of Shaowen Han based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Shaowen Han. Shaowen Han is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

19 of 19 papers shown

Luo, Ming, et al.. (2022). Non-fluorinated superhydrophobic film with high transparency for photovoltaic glass covers. Applied Surface Science. 609. 155299–155299. 33 indexed citations

Luo, Ming, et al.. (2022). Thermal analysis of radiative cooling coating on the rear surface of photovoltaic tile. Solar Energy. 248. 210–220. 10 indexed citations

Han, Shaowen, Shu Yang, & Kuang Sheng. (2021). Conductivity Modulation in Vertical GaN PiN Diode: Evidence and Impact. IEEE Electron Device Letters. 42(3). 300–303. 21 indexed citations

Yang, Shu, Shaowen Han, & Kuang Sheng. (2020). Vertical GaN power rectifiers: interface effects and switching performance. Semiconductor Science and Technology. 36(2). 24005–24005. 8 indexed citations

Yang, Shu, et al.. (2020). Investigation of Temperature-Dependent Dynamic R_ON of GaN HEMT with Hybrid-Drain under Hard and Soft Switching. 306–309. 16 indexed citations

Han, Shaowen, Shu Yang, & Kuang Sheng. (2020). Negative Dynamic R_ON in Vertical GaN PiN Diode: The Impact of Conductivity Modulation. 294–297. 1 indexed citations

Han, Shaowen, et al.. (2019). Photon-Enhanced Conductivity Modulation and Surge Current Capability in Vertical GaN Power Rectifiers. 23 indexed citations

Han, Shaowen, et al.. (2019). Surge Current Capability of GaN E-HEMTs in Reverse Conduction Mode. 439–442. 8 indexed citations

Yang, Shu, et al.. (2019). Investigation of Surge Current Capability of GaN E-HEMTs in The Third Quadrant: The Impact of P-GaN Contact. IEEE Journal of Emerging and Selected Topics in Power Electronics. 7(3). 1465–1474. 20 indexed citations

10.

Han, Shaowen, Shu Yang, & Kuang Sheng. (2019). Fluorine-Implanted Termination for Vertical GaN Schottky Rectifier With High Blocking Voltage and Low Forward Voltage Drop. IEEE Electron Device Letters. 40(7). 1040–1043. 80 indexed citations

11.

Yang, Shu, Shaowen Han, Kuang Sheng, & Kevin J. Chen. (2019). Dynamic On-Resistance in GaN Power Devices: Mechanisms, Characterizations, and Modeling. IEEE Journal of Emerging and Selected Topics in Power Electronics. 7(3). 1425–1439. 112 indexed citations

12.

Han, Shaowen, Shu Yang, Rui Li, Xinke Wu, & Kuang Sheng. (2018). Current-Collapse-Free and Fast Reverse Recovery Performance in Vertical GaN-on-GaN Schottky Barrier Diode. IEEE Transactions on Power Electronics. 34(6). 5012–5018. 66 indexed citations

13.

Han, Shaowen, Shu Yang, & Kuang Sheng. (2018). High-Voltage and High- $I_{\text {ON}}/I_{\text {OFF}}$ Vertical GaN-on-GaN Schottky Barrier Diode With Nitridation-Based Termination. IEEE Electron Device Letters. 39(4). 572–575. 112 indexed citations

14.

Liu, Yu-xin, Shaowen Han, Shu Yang, & Kuang Sheng. (2018). Design of Fluorine-Ion-Based Junction Termination Extension for Vertical GaN Schottky Rectifier. 1–5.

15.

Yang, Shu, Shaowen Han, Rui Li, & Kuang Sheng. (2018). 1 kV/1.3 mΩ·cm² vertical GaN-on-GaN Schottky barrier diodes with high switching performance. 272–275. 12 indexed citations

16.

Yang, Shu, Chunhua Zhou, Shaowen Han, Kuang Sheng, & Kevin J. Chen. (2017). Buffer trapping-induced R<inf>ON</inf> degradation in GaN-on-Si power transistors: Role of electron injection from Si substrate. Rare & Special e-Zone (The Hong Kong University of Science and Technology). 101–104. 4 indexed citations

17.

Yang, Shu, Chunhua Zhou, Shaowen Han, et al.. (2017). Impact of Substrate Bias Polarity on Buffer-Related Current Collapse in AlGaN/GaN-on-Si Power Devices. IEEE Transactions on Electron Devices. 64(12). 5048–5056. 83 indexed citations

18.

Tripathy, S., Vivian Kaixin Lin, Surani Bin Dolmanan, et al.. (2012). AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si(111). Applied Physics Letters. 101(8). 82110–82110. 94 indexed citations

19.

Han, Shaowen, et al.. (2004). Fabrication of MISFET type hydrogen sensor for high Performance. Journal of Hydrogen and New Energy. 15(4). 317–323. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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