Agnès Trassoudaine

815 total citations
53 papers, 648 citations indexed

About

Agnès Trassoudaine is a scholar working on Condensed Matter Physics, Materials Chemistry and Electrical and Electronic Engineering. According to data from OpenAlex, Agnès Trassoudaine has authored 53 papers receiving a total of 648 indexed citations (citations by other indexed papers that have themselves been cited), including 33 papers in Condensed Matter Physics, 25 papers in Materials Chemistry and 23 papers in Electrical and Electronic Engineering. Recurrent topics in Agnès Trassoudaine's work include GaN-based semiconductor devices and materials (33 papers), Nanowire Synthesis and Applications (18 papers) and ZnO doping and properties (17 papers). Agnès Trassoudaine is often cited by papers focused on GaN-based semiconductor devices and materials (33 papers), Nanowire Synthesis and Applications (18 papers) and ZnO doping and properties (17 papers). Agnès Trassoudaine collaborates with scholars based in France, Russia and Canada. Agnès Trassoudaine's co-authors include Dominique Castelluci, Yamina André, Evelyne Gil, R. Cadoret, Guillaume Monier, Catherine Bougerol, В. Г. Дубровский, Kaddour Lekhal, C. Robert‐Goumet and Christine Leroux and has published in prestigious journals such as The Journal of Chemical Physics, Nano Letters and Journal of Applied Physics.

In The Last Decade

Agnès Trassoudaine

49 papers receiving 632 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Agnès Trassoudaine France 16 345 340 329 279 193 53 648
Yamina André France 14 246 0.7× 322 0.9× 266 0.8× 229 0.8× 164 0.8× 46 539
Dominique Castelluci France 14 265 0.8× 283 0.8× 265 0.8× 242 0.9× 169 0.9× 37 540
Kaddour Lekhal France 12 361 1.0× 194 0.6× 246 0.7× 115 0.4× 232 1.2× 30 470
Mickael Lapeyrade Germany 13 538 1.6× 167 0.5× 249 0.8× 222 0.8× 368 1.9× 16 623
Evelyne Gil France 12 206 0.6× 234 0.7× 208 0.6× 201 0.7× 145 0.8× 39 439
Tobias Gotschke Germany 13 500 1.4× 250 0.7× 345 1.0× 139 0.5× 295 1.5× 17 593
Karen Charlene Cross United States 13 599 1.7× 199 0.6× 322 1.0× 241 0.9× 271 1.4× 17 715
Michael N. Fairchild United States 10 427 1.2× 167 0.5× 285 0.9× 163 0.6× 220 1.1× 14 531
Mohammed Réda Ramdani France 10 144 0.4× 404 1.2× 243 0.7× 316 1.1× 82 0.4× 21 551
Ting‐Wei Yeh United States 9 307 0.9× 321 0.9× 321 1.0× 230 0.8× 185 1.0× 13 602

Countries citing papers authored by Agnès Trassoudaine

Since Specialization
Citations

This map shows the geographic impact of Agnès Trassoudaine's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Agnès Trassoudaine with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Agnès Trassoudaine more than expected).

Fields of papers citing papers by Agnès Trassoudaine

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Agnès Trassoudaine. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Agnès Trassoudaine. The network helps show where Agnès Trassoudaine may publish in the future.

Co-authorship network of co-authors of Agnès Trassoudaine

This figure shows the co-authorship network connecting the top 25 collaborators of Agnès Trassoudaine. A scholar is included among the top collaborators of Agnès Trassoudaine based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Agnès Trassoudaine. Agnès Trassoudaine is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Дубровский, В. Г., et al.. (2024). Selective Area HVPE of InGaAs Nanowires with Widely Tunable Composition on Si Substrates for Nanoscale Device Integration on Si Platforms. ACS Applied Nano Materials. 7(15). 17417–17423.
2.
André, Yamina, Evelyne Gil, Philip A. Shields, et al.. (2024). Circumventing the ammonia-related growth suppression for obtaining regular GaN nanowires by HVPE. Nanotechnology. 35(26). 265604–265604. 2 indexed citations
3.
Дубровский, В. Г., Heinz Schmid, Catherine Bougerol, et al.. (2023). Importance of As and Ga Balance in Achieving Long GaAs Nanowires by Selective Area Epitaxy. Crystal Growth & Design. 23(6). 4401–4409. 4 indexed citations
4.
Paget, D., A. C. H. Rowe, Guillaume Monier, et al.. (2022). Anomalous ambipolar transport in depleted GaAs nanowires. Physical review. B.. 105(19). 1 indexed citations
5.
Gil, Evelyne, Dominique Castelluci, В. Г. Дубровский, et al.. (2021). Comprehensive model toward optimization of SAG In-rich InGaN nanorods by hydride vapor phase epitaxy. Nanotechnology. 32(15). 155601–155601. 1 indexed citations
6.
André, Yamina, Catherine Bougerol, Pierre‐Marie Coulon, et al.. (2020). Formation of voids in selective area growth of InN nanorods in SiN x on GaN templates. Nano Futures. 4(2). 25002–25002. 4 indexed citations
7.
André, Yamina, Nebile Işık Göktaş, Guillaume Monier, et al.. (2020). Optical and structural analysis of ultra-long GaAs nanowires after nitrogen-plasma passivation. Nano Express. 1(2). 20019–20019. 8 indexed citations
8.
Gil, Evelyne, Catherine Bougerol, Dominique Castelluci, et al.. (2020). Long catalyst-free InAs nanowires grown on silicon by HVPE. CrystEngComm. 23(2). 378–384. 4 indexed citations
9.
Leroy, Frédéric, Guillaume Monier, Evelyne Gil, et al.. (2020). Dynamics of Gold Droplet Formation on SiO2/Si(111) Surface. The Journal of Physical Chemistry C. 124(22). 11946–11951. 19 indexed citations
10.
Robin, Yoann, et al.. (2019). Monolithic integration of tricolor micro-LEDs and color mixing investigation by analog and digital dimming. Japanese Journal of Applied Physics. 58(SC). SCCC06–SCCC06. 17 indexed citations
11.
Monier, Guillaume, Evelyne Gil, Agnès Trassoudaine, et al.. (2019). Si Doping of Vapor–Liquid–Solid GaAs Nanowires: n-Type or p-Type?. Nano Letters. 19(7). 4498–4504. 30 indexed citations
12.
André, Yamina, Catherine Bougerol, Yoann Robin, et al.. (2018). Compositional control of homogeneous InGaN nanowires with the In content up to 90%. Nanotechnology. 30(4). 44001–44001. 13 indexed citations
13.
André, Yamina, Catherine Bougerol, Dominique Castelluci, et al.. (2018). Circumventing the miscibility gap in InGaN nanowires emitting from blue to red. Nanotechnology. 29(46). 465602–465602. 29 indexed citations
14.
Дубровский, В. Г., Guillaume Monier, Evelyne Gil, et al.. (2018). Influence of Silicon on the Nucleation Rate of GaAs Nanowires on Silicon Substrates. The Journal of Physical Chemistry C. 122(33). 19230–19235. 15 indexed citations
15.
Дубровский, В. Г., Yamina André, Christine Leroux, et al.. (2014). Record Pure Zincblende Phase in GaAs Nanowires down to 5 nm in Radius. Nano Letters. 14(7). 3938–3944. 74 indexed citations
16.
Gil, Evelyne, Yamina André, Mohammed Réda Ramdani, et al.. (2013). Record high-aspect-ratio GaAs nano-grating lines grown by Hydride Vapor Phase Epitaxy (HVPE). Journal of Crystal Growth. 380. 93–98. 6 indexed citations
17.
Lekhal, Kaddour, Yamina André, Agnès Trassoudaine, et al.. (2012). Catalyst-assisted hydride vapor phase epitaxy of GaN nanowires: exceptional length and constant rod-like shape capability. Nanotechnology. 23(40). 405601–405601. 25 indexed citations
18.
Ramdani, Mohammed Réda, Evelyne Gil, Yamina André, et al.. (2007). Selective epitaxial growth of GaAs tips for local spin injector applications. Journal of Crystal Growth. 306(1). 111–116. 8 indexed citations
19.
André, Yamina, Agnès Trassoudaine, R. Cadoret, et al.. (2007). Low dislocation density high-quality thick hydride vapour phase epitaxy (HVPE) GaN layers. Journal of Crystal Growth. 306(1). 86–93. 37 indexed citations
20.
Trassoudaine, Agnès, et al.. (2001). Thermodynamical and kinetic study of the GaN growth by HVPE under nitrogen. Journal of Crystal Growth. 222(3). 538–548. 15 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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