Agnès Trassoudaine

815 citations

53 papers · 648 indexed · h-index 16

Condensed Matter Physics top 5%
Biomedical Engineering top 10%
Materials Chemistry
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials top 10%

Co-authors: Yamina André Dominique Castelluci Evelyne Gil R. Cadoret Guillaume Monier Catherine Bougerol В. Г. Дубровский Kaddour Lekhal
Topics: GaN-based semiconductor devices and materials (33 papers)Nanowire Synthesis and Applications (18 papers)ZnO doping and properties (17 papers)
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Biomedical Engineering
Journals: The Journal of Chemical Physics Nano Letters Journal of Applied Physics
Partner nations: France Russia Canada

In The Last Decade

Agnès Trassoudaine

49 papers receiving 632 citations

Peers

Countries citing papers authored by Agnès Trassoudaine

Since Specialization

Citations

This map shows the geographic impact of Agnès Trassoudaine's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Agnès Trassoudaine with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Agnès Trassoudaine more than expected).

Fields of papers citing papers by Agnès Trassoudaine

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Agnès Trassoudaine. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Agnès Trassoudaine. The network helps show where Agnès Trassoudaine may publish in the future.

Co-authorship network of co-authors of Agnès Trassoudaine

This figure shows the co-authorship network connecting the top 25 collaborators of Agnès Trassoudaine. A scholar is included among the top collaborators of Agnès Trassoudaine based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Agnès Trassoudaine. Agnès Trassoudaine is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Circumventing the ammonia-related growth suppression for obtaining regular GaN nanowires by HVPE 2024 ·Nanotechnology ·(unknown),(unknown),Yamina André,Evelyne Gil,(unknown),Philip A. Shields,В. Г. Дубровский,Andréa Cattoni,Jean‐Christophe Harmand,Agnès Trassoudaine	2
2	Selective Area HVPE of InGaAs Nanowires with Widely Tunable Composition on Si Substrates for Nanoscale Device Integration on Si Platforms 2024 ·ACS Applied Nano Materials ·(unknown),В. Г. Дубровский,(unknown),(unknown),(unknown),Agnès Trassoudaine,(unknown),Ray LaPierre,Yamina André	0
3	Importance of As and Ga Balance in Achieving Long GaAs Nanowires by Selective Area Epitaxy 2023 ·Crystal Growth & Design ·(unknown),В. Г. Дубровский,(unknown),(unknown),(unknown),Heinz Schmid,Catherine Bougerol,Pierre‐Marie Coulon,Philip A. Shields,Agnès Trassoudaine,Evelyne Gil,Ray LaPierre,Yamina André	4
4	Anomalous ambipolar transport in depleted GaAs nanowires 2022 ·Physical review. B. ·(unknown),D. Paget,A. C. H. Rowe,Guillaume Monier,Khalid Lahlil,Evelyne Gil,Agnès Trassoudaine,Fabian Cadiz,Yamina André,C. Robert‐Goumet	1
5	Comprehensive model toward optimization of SAG In-rich InGaN nanorods by hydride vapor phase epitaxy 2021 ·Nanotechnology ·(unknown),(unknown),(unknown),Evelyne Gil,Dominique Castelluci,В. Г. Дубровский,Catherine Bougerol,Yamina André,Agnès Trassoudaine	1
6	Formation of voids in selective area growth of InN nanorods in SiN _x on GaN templates 2020 ·Nano Futures ·(unknown),Yamina André,(unknown),(unknown),Catherine Bougerol,Pierre‐Marie Coulon,P. Ferret,Dominique Castelluci,Evelyne Gil,Philip A. Shields,В. Г. Дубровский,Agnès Trassoudaine	4
7	Dynamics of Gold Droplet Formation on SiO₂/Si(111) Surface 2020 ·The Journal of Physical Chemistry C ·(unknown),Frédéric Leroy,Guillaume Monier,(unknown),Evelyne Gil,Agnès Trassoudaine,В. Г. Дубровский,Dominique Castelluci,Nebile Işık Göktaş,Ray LaPierre,Yamina André,C. Robert‐Goumet	19
8	Long catalyst-free InAs nanowires grown on silicon by HVPE 2020 ·CrystEngComm ·(unknown),Evelyne Gil,(unknown),Catherine Bougerol,(unknown),Dominique Castelluci,В. Г. Дубровский,Agnès Trassoudaine,Nebile Işık Göktaş,Ray LaPierre,Yamina André	4
9	Optical and structural analysis of ultra-long GaAs nanowires after nitrogen-plasma passivation 2020 ·Nano Express ·Yamina André,Nebile Işık Göktaş,Guillaume Monier,(unknown),(unknown),Catherine Bougerol,L. Bideux,Agnès Trassoudaine,D. Paget,(unknown),Evelyne Gil,C. Robert‐Goumet,Ray LaPierre	8
10	Si Doping of Vapor–Liquid–Solid GaAs Nanowires: n-Type or p-Type? 2019 ·Nano Letters ·(unknown),Guillaume Monier,Evelyne Gil,Agnès Trassoudaine,Catherine Bougerol,Christine Leroux,(unknown),C. Robert‐Goumet,Philip E. Hoggan,Yamina André,Nebile Işık Göktaş,Ray LaPierre,В. Г. Дубровский	30
11	Monolithic integration of tricolor micro-LEDs and color mixing investigation by analog and digital dimming 2019 ·Japanese Journal of Applied Physics ·Yoann Robin,(unknown),(unknown),Markus Pristovsek,Agnès Trassoudaine,Hiroshi Amano	17
12	Compositional control of homogeneous InGaN nanowires with the In content up to 90% 2018 ·Nanotechnology ·(unknown),(unknown),Yamina André,Catherine Bougerol,Yoann Robin,P. Ferret,Dominique Castelluci,Evelyne Gil,В. Г. Дубровский,Hiroshi Amano,Agnès Trassoudaine	13
13	Circumventing the miscibility gap in InGaN nanowires emitting from blue to red 2018 ·Nanotechnology ·(unknown),Yamina André,(unknown),Catherine Bougerol,Dominique Castelluci,François Réveret,(unknown),(unknown),(unknown),(unknown),В. Г. Дубровский,Agnès Trassoudaine	29
14	Influence of Silicon on the Nucleation Rate of GaAs Nanowires on Silicon Substrates 2018 ·The Journal of Physical Chemistry C ·(unknown),В. Г. Дубровский,Guillaume Monier,Evelyne Gil,Christine Leroux,(unknown),Agnès Trassoudaine,Catherine Bougerol,(unknown),C. Robert‐Goumet,Yamina André	15
15	Self-catalyzed GaAs nanowires on silicon by hydride vapor phase epitaxy 2017 ·Nanotechnology ·(unknown),Yamina André,В. Г. Дубровский,Catherine Bougerol,Christine Leroux,Mohammed Réda Ramdani,Guillaume Monier,Agnès Trassoudaine,Dominique Castelluci,Evelyne Gil	14
16	Record Pure Zincblende Phase in GaAs Nanowires down to 5 nm in Radius 2014 ·Nano Letters ·(unknown),В. Г. Дубровский,(unknown),Yamina André,Christine Leroux,Kaddour Lekhal,(unknown),Agnès Trassoudaine,Dominique Castelluci,Guillaume Monier,Mohammed Réda Ramdani,C. Robert‐Goumet,L. Bideux,Jean‐Christophe Harmand,Frank Glas	74
17	Record high-aspect-ratio GaAs nano-grating lines grown by Hydride Vapor Phase Epitaxy (HVPE) 2013 ·Journal of Crystal Growth ·Evelyne Gil,Yamina André,Mohammed Réda Ramdani,C. Fontaine,Agnès Trassoudaine,Dominique Castelluci	6
18	Catalyst-assisted hydride vapor phase epitaxy of GaN nanowires: exceptional length and constant rod-like shape capability 2012 ·Nanotechnology ·Kaddour Lekhal,(unknown),Yamina André,Agnès Trassoudaine,Evelyne Gil,C. Varenne,Catherine Bougerol,Guillaume Monier,Dominique Castelluci	25
19	Low dislocation density high-quality thick hydride vapour phase epitaxy (HVPE) GaN layers 2007 ·Journal of Crystal Growth ·Yamina André,Agnès Trassoudaine,(unknown),R. Cadoret,Evelyne Gil,Dominique Castelluci,(unknown),P. Disseix	37
20	Thermodynamical and kinetic study of the GaN growth by HVPE under nitrogen 2001 ·Journal of Crystal Growth ·(unknown),(unknown),Agnès Trassoudaine,(unknown),R. Cadoret	15

About Agnès Trassoudaine

Agnès Trassoudaine is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Materials Chemistry, having authored 53 papers that have together received 648 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (33 papers), Nanowire Synthesis and Applications (18 papers) and ZnO doping and properties (17 papers). The work is most often cited by research in Condensed Matter Physics (345 citations), Electronic, Optical and Magnetic Materials (193 citations) and Biomedical Engineering (340 citations). Agnès Trassoudaine has collaborated with scholars based in France, Russia and Canada. Frequent co-authors include Yamina André, Dominique Castelluci, Evelyne Gil, R. Cadoret, Guillaume Monier, Catherine Bougerol, В. Г. Дубровский, Kaddour Lekhal, C. Robert‐Goumet and Christine Leroux. Their work appears in journals such as The Journal of Chemical Physics, Nano Letters and Journal of Applied Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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