S. Moisa

1.6k total citations · 1 hit paper
46 papers, 1.4k citations indexed

About

S. Moisa is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, S. Moisa has authored 46 papers receiving a total of 1.4k indexed citations (citations by other indexed papers that have themselves been cited), including 34 papers in Electrical and Electronic Engineering, 26 papers in Materials Chemistry and 13 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in S. Moisa's work include Semiconductor materials and devices (22 papers), Semiconductor Quantum Structures and Devices (11 papers) and GaN-based semiconductor devices and materials (11 papers). S. Moisa is often cited by papers focused on Semiconductor materials and devices (22 papers), Semiconductor Quantum Structures and Devices (11 papers) and GaN-based semiconductor devices and materials (11 papers). S. Moisa collaborates with scholars based in Canada, United Kingdom and United States. S. Moisa's co-authors include M. Tabbal, Philippe Mérel, Mohamed Chaker, J. Margot, J. A. Bardwell, J. Fraser, H. Tang, J. B. Webb, A. Ricard and Michel Moisan and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

S. Moisa

46 papers receiving 1.4k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Direct evaluation of the sp3 content in diamond-like-carbon films by XPS

1998 616 citations S. Moisa et al. profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
S. Moisa Canada	15	922	662	465	234	226	46	1.4k
G. Soto Mexico	23	1.1k 1.2×	711 1.1×	542 1.2×	109 0.5×	117 0.5×	105	1.6k
H. Romanus Germany	20	722 0.8×	657 1.0×	284 0.6×	202 0.9×	129 0.6×	62	1.3k
Şadan Korkmaz Türkiye	23	995 1.1×	807 1.2×	231 0.5×	159 0.7×	136 0.6×	124	1.5k
Masatou Ishihara Japan	25	1.5k 1.6×	598 0.9×	504 1.1×	202 0.9×	162 0.7×	94	1.9k
A. K. Tyagi India	19	751 0.8×	395 0.6×	370 0.8×	101 0.4×	89 0.4×	89	1.2k
D. F. Franceschini Brazil	21	1.3k 1.4×	583 0.9×	910 2.0×	104 0.4×	95 0.4×	55	1.5k
C. Palacio Spain	24	846 0.9×	790 1.2×	514 1.1×	77 0.3×	171 0.8×	93	1.7k
C. N. Whang South Korea	23	952 1.0×	1.2k 1.8×	200 0.4×	115 0.5×	436 1.9×	99	1.9k
J. T. Prater United States	26	1.7k 1.9×	678 1.0×	281 0.6×	268 1.1×	182 0.8×	110	2.1k
Pierre‐Yves Tessier France	25	1.2k 1.3×	768 1.2×	494 1.1×	116 0.5×	101 0.4×	90	1.8k

Countries citing papers authored by S. Moisa

Since Specialization

Citations

This map shows the geographic impact of S. Moisa's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. Moisa with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. Moisa more than expected).

Fields of papers citing papers by S. Moisa

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. Moisa. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. Moisa. The network helps show where S. Moisa may publish in the future.

Co-authorship network of co-authors of S. Moisa

This figure shows the co-authorship network connecting the top 25 collaborators of S. Moisa. A scholar is included among the top collaborators of S. Moisa based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S. Moisa. S. Moisa is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Kololuoma, Terho, Jiangping Lu, Salima Alem, et al.. (2015). Flexo printed sol-gel derived vanadium oxide films as an interfacial hole-transporting layer for organic solar cells. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 9364. 93640K–93640K. 5 indexed citations

Hultquist, G., et al.. (2015). Corrosion of copper in distilled water without O2 and the detection of produced hydrogen. Corrosion Science. 95. 162–167. 36 indexed citations

Moisa, S., et al.. (2008). Study on the Behavior of Bifunctional Ion Exchanger with Hydroxamic Acid and Amidoxime Groups to Cr(III) Ions Sorption. Reviews in Analytical Chemistry. 27(3). 161–182. 2 indexed citations

Moisa, S., et al.. (2008). Comparative Study on the Sorption Performances of Cu(ii), Co(ii) and Cr(iii) Bifunctional Chelating Ion Exchangers with Hydroxamic and Amidoxime Groups for Heavy Metal Ions. Reviews in Analytical Chemistry. 27(3). 183–201. 1 indexed citations

Hashimoto, Teruo, P. Skeldon, G.E. Thompson, et al.. (2008). Barrier and porous anodic oxides on InSb. Corrosion Science. 50(5). 1353–1359. 7 indexed citations

Haffouz, S., H. Tang, J. A. Bardwell, et al.. (2005). Ammonia molecular beam epitaxy growth of p-type GaN and application to bipolar junction transistors. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 23(3). 1199–1203. 5 indexed citations

Tang, Hong, et al.. (2003). In situ Mg surface treatment of p-type GaN grown by ammonia-molecular-beam epitaxy for efficient Ohmic contact formation. Applied Physics Letters. 82(5). 736–738. 13 indexed citations

Lu, Zheng, et al.. (2003). Interfacial growth in HfOxNy gate dielectrics deposited using [(C2H5)2N]4Hf with O2 and NO. Applied Physics Letters. 83(13). 2638–2640. 56 indexed citations

Huang, T.Y., D. Landheer, Xiaohua Wu, et al.. (2003). Ultrathin Zirconium Silicate Films Deposited on Si(100) Using Zr(O[sup i]-Pr)[sub 2](thd)[sub 2], Si(O[sup t]-Bu)[sub 2](thd)[sub 2], and Nitric Oxide. Journal of The Electrochemical Society. 150(7). C465–C465. 5 indexed citations

10.

Sproule, G. I., et al.. (2003). Influence of Deuterium and Platinum on the Thermal Oxidation of GaAs. Journal of The Electrochemical Society. 150(10). G617–G617. 8 indexed citations

11.

Poitras, Daniel, J. A. Dobrowolski, Tom Cassidy, & S. Moisa. (2003). Ion-beam etching for the precise manufacture of optical coatings. Applied Optics. 42(19). 4037–4037. 10 indexed citations

12.

Landheer, D., et al.. (2002). Characterization of thin ZrO2 films deposited using (ZrOi–Pr)2(thd)2 and O2 on Si(100). Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 20(3). 1145–1148. 7 indexed citations

13.

Djenizian, Thierry, G. I. Sproule, S. Moisa, et al.. (2002). Composition and growth of thin anodic oxides formed on InP (100). Electrochimica Acta. 47(17). 2733–2740. 14 indexed citations

14.

Baribeau, J.‐M., et al.. (2002). Molecular beam epitaxy synthesis of Si1−yCy and Si1−x−yGexCy alloys and Ge islands using an electron cyclotron resonance argon/methane plasma. Thin Solid Films. 410(1-2). 61–71. 6 indexed citations

15.

Tang, H., J. A. Bardwell, J. B. Webb, et al.. (2001). Selective Area Growth of GaN on SiC Substrate by Ammonia-Source MBE. physica status solidi (a). 188(2). 715–718. 5 indexed citations

16.

Bardwell, J. A., J. B. Webb, H. Tang, J. Fraser, & S. Moisa. (2001). Ultraviolet photoenhanced wet etching of GaN in K2S2O8 solution. Journal of Applied Physics. 89(7). 4142–4149. 101 indexed citations

17.

Webb, James B., et al.. (2001). Defect reduction in GaN epilayers and HFET structures grown on (0001)sapphire by ammonia MBE. Journal of Crystal Growth. 230(3-4). 584–589. 19 indexed citations

18.

Dupont, E., Xing Zhu, Sheng‐Kuei Chiu, et al.. (2000). Insiturepair of optoelectronic devices with femtosecond laser pulses. Semiconductor Science and Technology. 15(3). L15–L18. 7 indexed citations

19.

Bardwell, J. A., Ian G. Foulds, J. B. Webb, et al.. (1999). A simple wet etch for GaN. Journal of Electronic Materials. 28(10). L24–L26. 40 indexed citations

20.

Vasiliu, F., et al.. (1994). Investigation of the phase composition in sintered lanthana-doped (Zr,Sn)TiO4 ceramics. Journal of Materials Science. 29(12). 3337–3341. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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