Masao Sakuraba

1.2k citations

128 papers · 926 indexed · h-index 16

Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices 84
- Thin-Film Transistor Technologies 49
- Silicon and Solar Cell Technologies 44
- Advancements in Semiconductor Devices and Circuit Design 30
- Silicon Carbide Semiconductor Technologies 13
Atomic and Molecular Physics, and Optics top 10%
- Semiconductor materials and interfaces 22
- Semiconductor Quantum Structures and Devices 21
Materials Chemistry
- Silicon Nanostructures and Photoluminescence 33
Surfaces, Coatings and Films
Condensed Matter Physics

Co-authors: Junichi Murota Takashi Matsuura Bernd Tillack Shoichi Ono Takeshi Watanabe Shigeo Sato Kuniaki Takahashi Toshiaki Tsuchiya
Cited by: Electrical and Electronic Engineering Atomic and Molecular Physics, and Optics Materials Chemistry
Journals: Thin Solid Films (28 papers)Applied Surface Science (19 papers)Materials Science in Semiconductor Processing (10 papers)
Partner nations: Japan Poland Germany

In The Last Decade

Masao Sakuraba

122 papers receiving 886 citations

Peers

Countries citing papers authored by Masao Sakuraba

Since Specialization

Citations

This map shows the geographic impact of Masao Sakuraba's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Masao Sakuraba with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Masao Sakuraba more than expected).

Fields of papers citing papers by Masao Sakuraba

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Masao Sakuraba. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Masao Sakuraba. The network helps show where Masao Sakuraba may publish in the future.

Co-authorship network

The 25 scholars most cited alongside Masao Sakuraba, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Masao Sakuraba Line = papers co-authored together Masao Sakuraba links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	SNDM Study of the MOS Interface State Densities on the 3C-SiC / 4H-SiC Stacked Structure Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena ·Hiroyuki Nagasawa,Yasuo Cho,Amalio García-Arias,Takenori Tanno,Hans-Jürgen Wöhler,Masao Sakuraba,Yusuke Sato,Shigeo Sato	2024	1
2	Computational Efficiency of a Modular Reservoir Network for Image Recognition Frontiers in Computational Neuroscience ·Yifan Dai,Hideaki Yamamoto,Masao Sakuraba,Shigeo Sato	2021	3
3	Unsupervised learning based on local interactions between reservoir and readout neurons IEICE Technical Report; IEICE Tech. Rep. ·Tstuki Kato,Satoshi Moriya,Hideaki Yamamoto,Masao Sakuraba,Shigeo Sato	2020	1
4	Carrier properties of B atomic-layer-doped Si films grown by ECR Ar plasma-enhanced CVD without substrate heating Science and Technology of Advanced Materials ·Masao Sakuraba,Supakit Kaewsarabhumi,V. N. Stadnichenko,Michał Bonarowski,Shigeo Sato	2017	5
5	Epitaxial growth of B-doped Si on Si(100) by electron-cyclotron-resonance Ar plasma chemical vapor deposition in a SiH4–B2H6–H2 gas mixture without substrate heating Thin Solid Films ·Yusuke Abe,Masao Sakuraba,Junichi Murota	2013	4
6	(Invited) Strain Control of Si and Si_1-x-yGe_xC_y Layers in Si/Si_1-x-yGe_xC_y/Si Heterostructures by Low-Pressure Chemical Vapor Deposition ECS Transactions ·Junichi Murota,千草松山,Jiro Hasegawa,Masao Sakuraba	2013	3
7	Atomically Controlled Processing in Silicon-Based CVD Epitaxial Growth Journal of Nanoscience and Nanotechnology ·Junichi Murota,Masao Sakuraba,Bernd Tillack	2011	0
8	Capture/Emission Processes of Carriers in Heterointerface Traps Observed in the Transient Charge-Pumping Characteristics of SiGe/Si-Hetero-Channel pMOSFETs Key engineering materials ·Toshiaki Tsuchiya,Johnny Prudencio Jacha Rojas,Masao Sakuraba,Junichi Murota	2011	1
9	Heavy atomic-layer doping of nitrogen in Si1−Ge film epitaxially grown on Si(100) by ultraclean low-pressure CVD Thin Solid Films ·Tomoyuki Kawashima,Masao Sakuraba,Bernd Tillack,Junichi Murota	2009	3
10	Heavy B atomic-layer doping characteristics in Si epitaxial growth on B adsorbed Si(1 0 0) by ultraclean low-pressure CVD system Solid-State Electronics ·Rannorey,Masao Sakuraba,Bernd Tillack,Junichi Murota	2009	7
11	Self-limited growth of Si on B atomic-layer formed Ge(100) by ultraclean low-pressure CVD system Applied Surface Science ·Takashi Yokogawa,Izzata Maghfirah,Masao Sakuraba,Junichi Murota,Shancheng Jin,Vicente Mira,J. J. Hummel	2008	2
12	Heavy atomic-layer doping of B in low-temperature Si epitaxial growth on Si(100) by ultraclean low-pressure chemical vapor deposition Applied Surface Science ·Rannorey,Masao Sakuraba,Bernd Tillack,Junichi Murota	2008	7
13	A Study on B Atomic Layer Formation for B-Doped Si_1-xGe_x(100) Epitaxial Growth Using Ultraclean LPCVD System ECS Transactions ·Izzata Maghfirah,Masao Sakuraba,Junichi Murota,Shancheng Jin,Vicente Mira,J. J. Hummel	2006	3
14	Propagation characteristics of Si nitride optical waveguide integrated with Si p-i-n diodes for light emitter and detector Atsushi Yamada,Masao Sakuraba,遼佑冨永,Kazumi Wada,Lionel C. Kimerling	2005	1
15	Strain relaxation by stripe patterning in Si/Si1−xGex/Si(100) heterostructures Thin Solid Films ·PAMELA ROBERTA GOMES GONELLI,Masao Sakuraba,Junichi Murota	2005	12
16	Si epitaxial growth on SiH3CH3 reacted Ge(1 0 0) and intermixing between Si and Ge during heat treatment Applied Surface Science ·Kazuya Takahashi,Gilbert S. K Wu,Masao Sakuraba,Junichi Murota	2003	2
17	Super self-aligned technology of ultra-shallow junction in MOSFETs using selective Si1−Ge CVD Materials Science and Engineering B ·Teeranai Pattanotai,R. K. Jevachitra,Makoto Ishii,Mort Rolleston,Masao Sakuraba,Takashi Matsuura,Junichi Murota,Toshiaki Tsuchiya	2002	3
18	Epitaxial growth of heavily P-doped Si films at 450 °C by alternately supplied PH3 and SiH4 Journal de Physique IV (Proceedings) ·Yingni Zhu,Masao Sakuraba,Takashi Matsuura,遼佑冨永	2001	3
19	Doping and electrical characteristics of in-situ heavily B-doped Si1−−Ge C films epitaxially grown using ultraclean LPCVD Thin Solid Films ·Amanda Freire da Costa Rios,Doohwan Lee,James Gd,Masao Sakuraba,Takashi Matsuura,Junichi Murota	2000	15
20	Atomic-layer epitaxy control of Ge and Si in flash-heating CVD using GeH4 and SiH4 gases Applied Surface Science ·Masao Sakuraba,Junichi Murota,Takeshi Watanabe,Yasuji Sawada,Shoichi Ono	1994	20

About Masao Sakuraba

Masao Sakuraba is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry, having authored 128 papers that have together received 926 indexed citations. Recurring topics across this work include Semiconductor materials and devices (84 papers), Thin-Film Transistor Technologies (49 papers), Silicon and Solar Cell Technologies (44 papers), Silicon Nanostructures and Photoluminescence (33 papers), Advancements in Semiconductor Devices and Circuit Design (30 papers), Semiconductor materials and interfaces (22 papers), Semiconductor Quantum Structures and Devices (21 papers) and Silicon Carbide Semiconductor Technologies (13 papers). The work is most often cited by research in Electrical and Electronic Engineering (826 citations), Atomic and Molecular Physics, and Optics (261 citations) and Materials Chemistry (296 citations). Masao Sakuraba has collaborated with scholars based in Japan, Poland and Germany. Frequent co-authors include Junichi Murota, Takashi Matsuura, Bernd Tillack, Shoichi Ono, Takeshi Watanabe, Shigeo Sato, Kuniaki Takahashi, Toshiaki Tsuchiya, Daisuke Muto and Nobuo Mikoshiba. Their work appears in journals such as Thin Solid Films, Applied Surface Science, Materials Science in Semiconductor Processing, Japanese Journal of Applied Physics and Semiconductor Science and Technology.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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