В. С. Просолович

5.8k total citations
65 papers, 196 citations indexed

About

В. С. Просолович is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, В. С. Просолович has authored 65 papers receiving a total of 196 indexed citations (citations by other indexed papers that have themselves been cited), including 35 papers in Electrical and Electronic Engineering, 18 papers in Materials Chemistry and 15 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in В. С. Просолович's work include Silicon and Solar Cell Technologies (18 papers), Ion-surface interactions and analysis (12 papers) and Thin-Film Transistor Technologies (11 papers). В. С. Просолович is often cited by papers focused on Silicon and Solar Cell Technologies (18 papers), Ion-surface interactions and analysis (12 papers) and Thin-Film Transistor Technologies (11 papers). В. С. Просолович collaborates with scholars based in Belarus, United States and Russia. В. С. Просолович's co-authors include С. Д. Бринкевич, В. Б. Оджаев, С. Б. Ластовский, Victor Petrov, V. D. Tkachev, Н. М. Лапчук, S. Movchan, Yu. A. Karpov and S. Koveshnikov and has published in prestigious journals such as SHILAP Revista de lepidopterología, Vacuum and Inorganic Materials.

In The Last Decade

В. С. Просолович

52 papers receiving 180 citations

Peers

В. С. Просолович

EEE

G. Pant United States

A. J. M. Berntsen Netherlands

И. Н. Пархоменко Belarus

Mickaël Lozac’h Japan

M. Brinza Belgium

Worth B. Henley United States

Μ. Schaller Germany

P. Y. Hung United States

Abdennaceur Karoui United States

E. Terzini Italy

G. Pant United States

В. С. Просолович

417 ×3.9

EEE

135 ×1.7

39 ×0.8

8 ×0.2

21 ×0.6

Citations per year, relative to В. С. Просолович В. С. Просолович (= 1×) peers G. Pant

Countries citing papers authored by В. С. Просолович

Since Specialization

Citations

This map shows the geographic impact of В. С. Просолович's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by В. С. Просолович with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites В. С. Просолович more than expected).

Fields of papers citing papers by В. С. Просолович

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by В. С. Просолович. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by В. С. Просолович. The network helps show where В. С. Просолович may publish in the future.

Co-authorship network of co-authors of В. С. Просолович

This figure shows the co-authorship network connecting the top 25 collaborators of В. С. Просолович. A scholar is included among the top collaborators of В. С. Просолович based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with В. С. Просолович. В. С. Просолович is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Бринкевич, С. Д., et al.. (2025). Radiation-Induced Processes in Electron-Irradiated Films of Negative Phenol-Formaldehyde Photoresist on Silicon. Surface Engineering and Applied Electrochemistry. 61(1). 130–135. 1 indexed citations

Просолович, В. С., et al.. (2024). IR-Fourier Spectroscopy of Attenuated Total Internal Reflection of Polyimide Films on Single-Crystal Silicon Wafers. Journal of Applied Spectroscopy. 91(2). 302–306. 1 indexed citations

Бринкевич, С. Д., et al.. (2024). Адгезия к монокристаллическому кремнию пленок диазохинонноволачных фоторезистов, облученных электронами. 58(1). 60–68.

Оджаев, В. Б., et al.. (2024). The Effect of Gamma Irradiation on the Electrophysical Parameters of Nickel-Doped Silicon Solar Cells. Surface Engineering and Applied Electrochemistry. 60(6). 851–856.

Оджаев, В. Б., et al.. (2024). Influence of Nickel Impurity on the Operating Parameters of a Silicon Solar Cell. Russian Microelectronics. 53(2). 105–116.

Просолович, В. С., et al.. (2024). INFRARED FOURIER SPECTROSCOPY OF DIFFUSE REFLECTIONOF THE AZ nLOF SERIES NEGATIVE PHOTORESISTS FILMSON MONOCRYSTALLINE SILICON. Digital Library of the Belarusian State University (Belarusian State University). 34–40. 1 indexed citations

Просолович, В. С., et al.. (2024). ELECTRON IRRADIATED PI2610 POLYIMIDE FILMS ON MONOCRYSTALLINE SILICON. Digital Library of the Belarusian State University (Belarusian State University). 41–46.

Бринкевич, С. Д., et al.. (2023). Radiation-Induced Alteration of the Reflection Spectra of Diazoquinone–Novolac Photoresist Films by Implantation of Ag+ Ions. Digital Library of the Belarusian State University (Belarusian State University). 57(6). 465–471.

Просолович, В. С., et al.. (2023). INDENTATION OF ELECTRON-IRRAUDED FILMS OF DIAZOQUINONE NOVOLAC PHOTORESISTS ON SILICONE. Digital Library of the Belarusian State University (Belarusian State University). 29–37.

10.

Бринкевич, С. Д., et al.. (2022). Processes Induced in DLC/Polyimide Structures by Irradiation with 60Co γ-Rays. High Energy Chemistry. 56(5). 354–362. 9 indexed citations

11.

Бринкевич, С. Д., et al.. (2021). Adhesion of Irradiated Diazoquinone–Novolac Photoresist Films to Single-Crystal Silicon. High Energy Chemistry. 55(6). 495–501. 5 indexed citations

12.

Бринкевич, С. Д., et al.. (2020). Modification of Diazoquinone–Novolac Photoresist Films beyond the Region of Implantation of B+ Ions. High Energy Chemistry. 54(5). 342–351. 15 indexed citations

13.

Лапчук, Н. М., et al.. (2020). Electronic Conductivity in a Р+-Ion Implanted Positive Photoresist. Russian Microelectronics. 49(1). 55–61. 8 indexed citations

14.

Просолович, В. С., et al.. (2016). MEASUREMENT OF MICROHARDNESS OF PHOTORESIST FILMS ON SILICON BY THE SCRATCHING METHOD. Electronic scientific archive of UrFU (Ural Federal University). 7(1). 77–84. 2 indexed citations

15.

Бринкевич, С. Д., et al.. (2014). Ion implantation of positive photoresists. Russian Microelectronics. 43(3). 194–200. 15 indexed citations

16.

Просолович, В. С., et al.. (2013). Physical and mechanical properties of silicon near the SiO2/Si interface. Journal of Surface Investigation X-ray Synchrotron and Neutron Techniques. 7(6). 1217–1220. 2 indexed citations

17.

Просолович, В. С., et al.. (2007). Microhardness of silicon layers grown by liquid phase epitaxy. Inorganic Materials. 43(10). 1035–1039. 3 indexed citations

18.

Просолович, В. С., et al.. (2006). Influence of background impurities on the formation of stacking faults in silicon wafers. Russian Microelectronics. 35(2). 94–97. 1 indexed citations

19.

Просолович, В. С., et al.. (2002). Doping Silicon with Lanthanides as a Method for the Optimization of Parameters of Ionizing-Radiation Detectors. Instruments and Experimental Techniques. 45(3). 314–316. 1 indexed citations

20.

Просолович, В. С., et al.. (2002). Effect of Rare-Earth Impurities on the Magnetoresistance of Single-Crystal Silicon. Inorganic Materials. 38(7). 637–639. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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