S. Aritome

1.5k total citations
58 papers, 904 citations indexed

About

S. Aritome is a scholar working on Electrical and Electronic Engineering, Computer Networks and Communications and Hardware and Architecture. According to data from OpenAlex, S. Aritome has authored 58 papers receiving a total of 904 indexed citations (citations by other indexed papers that have themselves been cited), including 47 papers in Electrical and Electronic Engineering, 38 papers in Computer Networks and Communications and 11 papers in Hardware and Architecture. Recurrent topics in S. Aritome's work include Semiconductor materials and devices (45 papers), Advanced Data Storage Technologies (38 papers) and Advancements in Semiconductor Devices and Circuit Design (18 papers). S. Aritome is often cited by papers focused on Semiconductor materials and devices (45 papers), Advanced Data Storage Technologies (38 papers) and Advancements in Semiconductor Devices and Circuit Design (18 papers). S. Aritome collaborates with scholars based in Japan, South Korea and Netherlands. S. Aritome's co-authors include R. Shirota, Gertjan Hemink, Tetsuo Endoh, F. Masuoka, Luca Crippa, Rino Micheloni, Kazuhiro Shimizu, Ken Takeuchi, S. Satoh and Tomoharu Tanaka and has published in prestigious journals such as Proceedings of the IEEE, IEEE Journal of Solid-State Circuits and IEEE Transactions on Electron Devices.

In The Last Decade

S. Aritome

55 papers receiving 859 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
S. Aritome Japan	16	720	482	134	114	102	58	904
R. Shirota Japan	15	687 1.0×	464 1.0×	107 0.8×	84 0.7×	101 1.0×	63	821
Neal Mielke United States	12	852 1.2×	565 1.2×	215 1.6×	59 0.5×	122 1.2×	27	1.2k
Jungdal Choi South Korea	13	682 0.9×	382 0.8×	58 0.4×	122 1.1×	128 1.3×	26	849
Jae-Duk Lee South Korea	9	554 0.8×	471 1.0×	86 0.6×	82 0.7×	152 1.5×	19	794
M. Kido Japan	7	763 1.1×	393 0.8×	83 0.6×	104 0.9×	86 0.8×	9	900
E. Camerlenghi Italy	7	506 0.7×	256 0.5×	78 0.6×	152 1.3×	63 0.6×	14	703
Sung‐Hoi Hur South Korea	11	685 1.0×	344 0.7×	54 0.4×	176 1.5×	115 1.1×	32	854
Akira Goda United States	16	788 1.1×	432 0.9×	58 0.4×	89 0.8×	58 0.6×	32	909
Kang-Deog Suh South Korea	11	562 0.8×	443 0.9×	123 0.9×	47 0.4×	147 1.4×	15	787
Sung-Kye Park South Korea	13	530 0.7×	383 0.8×	73 0.5×	55 0.5×	55 0.5×	43	625

Countries citing papers authored by S. Aritome

Since Specialization

Citations

This map shows the geographic impact of S. Aritome's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. Aritome with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. Aritome more than expected).

Fields of papers citing papers by S. Aritome

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. Aritome. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. Aritome. The network helps show where S. Aritome may publish in the future.

Co-authorship network of co-authors of S. Aritome

This figure shows the co-authorship network connecting the top 25 collaborators of S. Aritome. A scholar is included among the top collaborators of S. Aritome based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S. Aritome. S. Aritome is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Aritome, S., et al.. (2017). RTN impact on data-retention failure/recovery in scaled (∼1Ynm) TLC NAND flash memories. PM–13.1. 5 indexed citations

Watanabe, Hikaru, et al.. (2017). Investigation of read disturb error in 1Ynm NAND flash memories for system level solution. PM–6.1. 4 indexed citations

Aritome, S.. (2016). NAND flash memory technologies. CERN Document Server (European Organization for Nuclear Research). 10 indexed citations

Aritome, S.. (2016). NAND Flash Memory Revolution. 1–4. 17 indexed citations

Aritome, S.. (2013). NAND Flash Innovations. IEEE Solid-State Circuits Magazine. 5(4). 21–29. 6 indexed citations

Aritome, S., S. J. Whang, Ki-Hong Lee, et al.. (2012). A novel three-dimensional dual control-gate with surrounding floating-gate (DC-SF) NAND flash cell. Solid-State Electronics. 79. 166–171. 7 indexed citations

Ho, Ching-Yuan, et al.. (2008). Improvement of Interpoly Dielectric Characteristics by Plasma Nitridation and Oxidation for Future nand Flash Memory. IEEE Electron Device Letters. 29(11). 1199–1202. 15 indexed citations

Aritome, S., S. Satoh, Toru Maruyama, et al.. (2002). A 0.67 μm/sup 2/ self-aligned shallow trench isolation cell (SA-STI cell) for 3 V-only 256 Mbit NAND EEPROMs. 61–64. 7 indexed citations

Satoh, S., et al.. (2002). Stress induced leakage current of tunnel oxide derived from flash memory read-disturb characteristics. 97–101. 3 indexed citations

10.

Yamada, Shigeru, et al.. (2002). Read disturb degradation mechanism for source erase flash memories. 242–243. 5 indexed citations

11.

Goda, Akira, H. Hazama, H. Iizuka, et al.. (2002). A novel surface-oxidized barrier-SiN cell technology to improve endurance and read-disturb characteristics for gigabit NAND flash memories. 771–774. 2 indexed citations

12.

Shimizu, Kazuhiro, K. Narita, Hiroshi Watanabe, et al.. (2002). A novel high-density 5F/sup 2/ NAND STI cell technology suitable for 256 Mbit and 1 Gbit flash memories. 271–274. 11 indexed citations

13.

Satoh, S., Kazuhiro Shimizu, Tomoharu Tanaka, et al.. (2002). A novel Channel Boost Capacitance (CBC) cell technology with low program disturbance suitable for fast programming 4 Gbit NAND flash memories. 108–109. 5 indexed citations

14.

Fujiwara, M., Tsutomu Sato, Ichiro Mizushima, et al.. (2000). Dopant Diffusion in Silicon Substrate during Oxynitride Process. MRS Proceedings. 610. 1 indexed citations

15.

Imamiya, K., Hiroshi Nakamura, Ken Takeuchi, et al.. (1999). A 130-mm/sup 2/, 256-Mbit NAND flash with shallow trench isolation technology. IEEE Journal of Solid-State Circuits. 34(11). 1536–1543. 18 indexed citations

16.

Aritome, S., et al.. (1994). Data Retention Characteristics of Flash Memory Cells after Write and Erase Cycling. IEICE Transactions on Electronics. 77(8). 1287–1295. 6 indexed citations

17.

Aritome, S., S. Satoh, Toru Maruyama, et al.. (1994). A 0.67μm^2 self-aligned shallow trench isolation cell (SA-STI cell) for 3V-only 256Mbit NAND EEP-ROMs. Medical Entomology and Zoology. 23 indexed citations

18.

Watanabe, Shunsuke, et al.. (1993). BiCMOS circuit technology for high-speed DRAMs. IEEE Journal of Solid-State Circuits. 28(1). 4–9. 3 indexed citations

19.

Endoh, Tetsuo, et al.. (1992). A Study of High-Performance NAND Structured EEPROMS. IEICE Transactions on Electronics. 1351–1357. 5 indexed citations

20.

Iwata, Yoichi, Tomoharu Tanaka, Y. Itoh, et al.. (1990). A high-density NAND EEPROM with block-page programming for microcomputer applications. IEEE Journal of Solid-State Circuits. 25(2). 417–424. 10 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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