Scott T. Dunham

2.8k total citations
151 papers, 2.2k citations indexed

About

Scott T. Dunham is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, Scott T. Dunham has authored 151 papers receiving a total of 2.2k indexed citations (citations by other indexed papers that have themselves been cited), including 132 papers in Electrical and Electronic Engineering, 64 papers in Atomic and Molecular Physics, and Optics and 57 papers in Materials Chemistry. Recurrent topics in Scott T. Dunham's work include Silicon and Solar Cell Technologies (83 papers), Semiconductor materials and interfaces (53 papers) and Semiconductor materials and devices (40 papers). Scott T. Dunham is often cited by papers focused on Silicon and Solar Cell Technologies (83 papers), Semiconductor materials and interfaces (53 papers) and Semiconductor materials and devices (40 papers). Scott T. Dunham collaborates with scholars based in United States, Germany and Japan. Scott T. Dunham's co-authors include J.D. Plummer, Wolfgang Windl, R. Stumpf, Michael P. Masquelier, Shifeng Zhu, Peipeng Xu, Arka Majumdar, Jiajiu Zheng, Renyu Chen and Daniel R. Gamelin and has published in prestigious journals such as Journal of the American Chemical Society, Physical Review Letters and Advanced Materials.

In The Last Decade

Scott T. Dunham

143 papers receiving 2.1k citations

Peers

Scott T. Dunham

EEE

AMPO

EOMM

Jiabao Zheng United States

Rudolf Hezel Germany

Ivan Gordon Belgium

Osamu Nakatsuka Japan

C.A. Dimitriadis Greece

C. Jahnes United States

Jesse A. Frantz United States

Baitao Zhang China

William S. Whitney United States

I. Mártil Spain

Jiabao Zheng United States

Scott T. Dunham

670 ×0.4

EEE

1.3k ×1.1

590 ×0.8

AMPO

172 ×0.5

EOMM

425 ×2.3

Citations per year, relative to Scott T. Dunham Scott T. Dunham (= 1×) peers Jiabao Zheng

Countries citing papers authored by Scott T. Dunham

Since Specialization

Citations

This map shows the geographic impact of Scott T. Dunham's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Scott T. Dunham with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Scott T. Dunham more than expected).

Fields of papers citing papers by Scott T. Dunham

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Scott T. Dunham. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Scott T. Dunham. The network helps show where Scott T. Dunham may publish in the future.

Co-authorship network of co-authors of Scott T. Dunham

This figure shows the co-authorship network connecting the top 25 collaborators of Scott T. Dunham. A scholar is included among the top collaborators of Scott T. Dunham based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Scott T. Dunham. Scott T. Dunham is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Kuciauskas, Darius, et al.. (2025). Increased Voltage in CdSe Solar Cells by Mitigation of Charge Carrier Trapping Due to Se Vacancies. Advanced Materials Technologies. 11(3). 1 indexed citations

Dunham, Scott T., et al.. (2024). Interstitals as non-radiative recombination centers for all-inorganic halide perovskites. Computational Materials Science. 246. 113384–113384.

Mannodi‐Kanakkithodi, Arun, et al.. (2022). Universal machine learning framework for defect predictions in zinc blende semiconductors. Patterns. 3(3). 100450–100450. 33 indexed citations

Zheng, Jiajiu, Shifeng Zhu, Peipeng Xu, Scott T. Dunham, & Arka Majumdar. (2020). Modeling Electrical Switching of Nonvolatile Phase-Change Integrated Nanophotonic Structures with Graphene Heaters. ACS Applied Materials & Interfaces. 12(19). 21827–21836. 78 indexed citations

Zheng, Jiajiu, Zhuoran Fang, Changming Wu, et al.. (2020). Nonvolatile Electrically Reconfigurable Integrated Photonic Switch Enabled by a Silicon PIN Diode Heater. Advanced Materials. 32(31). e2001218–e2001218. 182 indexed citations

Christen, Ian, et al.. (2020). Window into NV center kinetics via repeated annealing and spatial tracking of thousands of individual NV centers. Physical Review Materials. 4(2). 25 indexed citations

Dunham, Scott T., et al.. (2015). Calculation of Defect Concentrations and Phase Stability in Cu$_2$ ZnSnS$_4$ and Cu$_2$ ZnSnSe$_4$ From Stoichiometry. IEEE Journal of Photovoltaics. 5(4). 1188–1196. 23 indexed citations

Jiang, Wenjun, et al.. (2011). Insights into scanning probe high-field chemistry of diphenylgermane. Physical Chemistry Chemical Physics. 13(11). 4842–4842. 5 indexed citations

Wagner, Hannes, et al.. (2011). Improving the predictive power of modeling the emitter diffusion by fully including the phosphsilicate glass (PSG) layer. 2957–2962. 15 indexed citations

10.

Chen, Renyu & Scott T. Dunham. (2010). Kinetic lattice Monte Carlo simulations of interdiffusion in strained silicon germanium alloys. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 28(1). C1G18–C1G23. 5 indexed citations

11.

Dunham, Scott T., et al.. (2008). Atomistic modeling of dopant diffusion and segregation in strained SiGeC. 74. 333–336. 1 indexed citations

12.

Kim, Kidong, et al.. (2004). Molecular dynamics (MD) modeling for low-energy ion implantation process. Journal of the Korean Physical Society. 45(5). 1327–1331. 1 indexed citations

13.

Dunham, Scott T., et al.. (2003). The Process Modeling Hierarchy: Connecting Atomistic Calculations to Nanoscale Behavior. IEICE Transactions on Electronics. 276–283. 2 indexed citations

14.

Dunham, Scott T., et al.. (2002). Ab-initio Calculations to Model Anomalous Fluorine Behavior. MRS Proceedings. 717. 12 indexed citations

15.

Dunham, Scott T., et al.. (2001). Atomistic Modeling of Arsenic Diffusion and Activation. TechConnect Briefs. 2(2001). 100–103. 1 indexed citations

16.

Dunham, Scott T., et al.. (1999). Modeling of Dopant Diffusion in Silicon. IEICE Transactions on Electronics. 82(6). 800–812. 5 indexed citations

17.

Dunham, Scott T., et al.. (1998). DOPDEES/PMM: A System for Portable Model Description. TechConnect Briefs. 398–401. 1 indexed citations

18.

Dunham, Scott T., et al.. (1997). A predictive model for transient enhanced diffusion based on evolution of {311} defects. Journal of Applied Physics. 81(2). 631–636. 32 indexed citations

19.

Dunham, Scott T., et al.. (1995). Atomistic models of vacancy-mediated diffusion in silicon. Journal of Applied Physics. 78(4). 2362–2366. 52 indexed citations

20.

Dunham, Scott T.. (1987). Analysis of the effect of thermal nitridation of silicon dioxide on silicon interstitial concentration. Journal of Applied Physics. 62(4). 1195–1201. 7 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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