H. Bu

778 total citations
28 papers, 493 citations indexed

About

H. Bu is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, H. Bu has authored 28 papers receiving a total of 493 indexed citations (citations by other indexed papers that have themselves been cited), including 17 papers in Electrical and Electronic Engineering, 7 papers in Materials Chemistry and 5 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in H. Bu's work include Semiconductor materials and devices (16 papers), Advancements in Semiconductor Devices and Circuit Design (8 papers) and Ion-surface interactions and analysis (5 papers). H. Bu is often cited by papers focused on Semiconductor materials and devices (16 papers), Advancements in Semiconductor Devices and Circuit Design (8 papers) and Ion-surface interactions and analysis (5 papers). H. Bu collaborates with scholars based in United States, China and Hong Kong. H. Bu's co-authors include J. W. Rabalais, Antonio Rotondaro, O. Grizzi, Kevin J. Boyd, R. A. Baragiola, Minjia Shi, S. S. Todorov, D. Marton, Luigi Colombo and M. J. Bevan and has published in prestigious journals such as The Journal of Chemical Physics, Physical review. B, Condensed matter and ACS Nano.

In The Last Decade

H. Bu

27 papers receiving 475 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
H. Bu United States	12	284	132	127	112	65	28	493
S. Ustaze France	12	89 0.3×	128 1.0×	141 1.1×	189 1.7×	60 0.9×	19	340
K. Nakatsuji Japan	14	172 0.6×	36 0.3×	220 1.7×	260 2.3×	44 0.7×	27	473
Marek Szymoński Poland	15	254 0.9×	142 1.1×	326 2.6×	112 1.0×	22 0.3×	26	522
Seiji Usami Japan	11	123 0.4×	39 0.3×	225 1.8×	141 1.3×	83 1.3×	45	374
Christoph Schwanke Germany	12	166 0.6×	64 0.5×	132 1.0×	47 0.4×	27 0.4×	23	374
A. B. Preobrajenski Germany	13	214 0.8×	23 0.2×	326 2.6×	132 1.2×	38 0.6×	19	483
O.A. Baschenko Russia	11	222 0.8×	87 0.7×	92 0.7×	145 1.3×	410 6.3×	17	500
D.K. Shuh United States	9	226 0.8×	37 0.3×	215 1.7×	96 0.9×	57 0.9×	15	401
N.P. Prince United Kingdom	9	179 0.6×	18 0.1×	152 1.2×	285 2.5×	167 2.6×	13	443
J.M. Blanco Spain	11	169 0.6×	38 0.3×	167 1.3×	277 2.5×	38 0.6×	15	407

Countries citing papers authored by H. Bu

Since Specialization

Citations

This map shows the geographic impact of H. Bu's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H. Bu with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H. Bu more than expected).

Fields of papers citing papers by H. Bu

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H. Bu. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H. Bu. The network helps show where H. Bu may publish in the future.

Co-authorship network of co-authors of H. Bu

This figure shows the co-authorship network connecting the top 25 collaborators of H. Bu. A scholar is included among the top collaborators of H. Bu based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with H. Bu. H. Bu is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Liang, Ting, Ke Xu, H. Bu, et al.. (2025). PYSED: A tool for extracting kinetic-energy-weighted phonon dispersion and lifetime from molecular dynamics simulations. Journal of Applied Physics. 138(7). 5 indexed citations

Liang, Ting, et al.. (2025). Moiré-Driven Interfacial Thermal Transport in Twisted Transition Metal Dichalcogenides. ACS Nano. 19(17). 16287–16296. 8 indexed citations

Wu, Tiantian, et al.. (2024). Determination of local pH in CO₂ electroreduction. Nanoscale. 16(8). 3926–3935. 23 indexed citations

Wen, Yan, et al.. (2024). Mechanistic Insights into the Abrupt Change of Electrolyte in CO₂ Electroreduction. ACS Catalysis. 14(8). 6328–6338. 23 indexed citations

Tsunomura, Takaaki, C. Mazuré, J.C.S. Woo, et al.. (2017). Technology evening panel discussion transistor future; How does it evolve after FinFET Era? Tuesday, June 6, 20:00–21:30. T66–T66. 1 indexed citations

Hopstaken, Marinus, Douglas R. Pfeiffer, M. Copel, et al.. (2012). Physical characterization of sub‐32‐nm semiconductor materials and processes using advanced ion beam–based analytical techniques. Surface and Interface Analysis. 45(1). 338–344. 2 indexed citations

Kohli, Puneet, Amit Kumar C Jain, S. Chakravarthi, et al.. (2005). Interactions of B dopant atoms and Si interstitials with SiO2 films during annealing for ultra-shallow junction formation. Journal of Applied Physics. 97(7). 5 indexed citations

Huang, Min, et al.. (2005). Phenomenological model for "stress memorization" effect from a capped-poly process. 139–142. 8 indexed citations

Bu, H., et al.. (2005). Manufacturing Benefits of Disilane as a Precursor for Polycrystalline Silicon Films for the Advanced CMOS Gate Electrode. IEEE Transactions on Semiconductor Manufacturing. 18(1). 42–48. 2 indexed citations

10.

Kohli, Puneet, Amitabh Jain, H. Bu, et al.. (2004). Effect of nitride sidewall spacer process on boron dose loss in ultrashallow junction formation. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 22(1). 471–476. 14 indexed citations

11.

Kohli, Puneet, S. Chakravarthi, Amitabh Jain, et al.. (2004). Fundamental characterization of the effect of nitride sidewall spacer process on boron dose loss in ultra-shallow junction formation. Materials Science and Engineering B. 114-115. 390–396. 5 indexed citations

12.

Shanware, A., M. R. Visokay, Antonio Rotondaro, et al.. (2003). Evaluation of the positive biased temperature stress stability in HfSiON gate dielectrics. 208–213. 20 indexed citations

13.

Chakravarthi, S., Puneet Kohli, P.R. Chidambaram, et al.. (2003). Modeling the effect of source/drain sidewall spacer process on boron ultra shallow junctions. 159–162. 7 indexed citations

14.

Shanware, A., J. W. McPherson, M. R. Visokay, et al.. (2002). Reliability evaluation of HfSiON gate dielectric film with 12.8 Å SiO/sub 2/ equivalent thickness. 6.6.1–6.6.4. 9 indexed citations

15.

Hendrix, B. C., A. S. Borovik, Chen Xu, et al.. (2002). Comparison of Mocvd Precursors for Hf_1-xSi_xO₂ Gate Dielectric Deposition. MRS Proceedings. 716. 3 indexed citations

16.

Bu, H., et al.. (2001). Investigation of polycrystalline silicon grain structure with single wafer chemical vapor deposition technique. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 19(4). 1898–1901. 3 indexed citations

17.

Marton, D., H. Bu, Kevin J. Boyd, et al.. (1995). On the defect structure due to low energy ion bombardment of graphite. Surface Science. 326(3). L489–L493. 63 indexed citations

18.

Bu, H., P. Bertrand, & J. W. Rabalais. (1993). Structure of benzene and phenol chemisorbed on Ni{110}. The Journal of Chemical Physics. 98(7). 5855–5862. 23 indexed citations

19.

Bu, H., et al.. (1992). Angular anisotropy of surface multiple scattering: analysis of carbon contamination on an Ir{110} surface. Surface Science. 275(3). 332–338. 4 indexed citations

20.

Bu, H., et al.. (1991). Direct determination of crystal surface periodicity from scattering and recoiling azimuthal anisotropy. Surface Science. 249(1-3). 313–321. 18 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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