M.J. Kim

403 total citations
15 papers, 313 citations indexed

About

M.J. Kim is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, M.J. Kim has authored 15 papers receiving a total of 313 indexed citations (citations by other indexed papers that have themselves been cited), including 10 papers in Electrical and Electronic Engineering, 4 papers in Atomic and Molecular Physics, and Optics and 3 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in M.J. Kim's work include Semiconductor materials and devices (7 papers), 3D IC and TSV technologies (3 papers) and Semiconductor materials and interfaces (2 papers). M.J. Kim is often cited by papers focused on Semiconductor materials and devices (7 papers), 3D IC and TSV technologies (3 papers) and Semiconductor materials and interfaces (2 papers). M.J. Kim collaborates with scholars based in United States, Canada and Italy. M.J. Kim's co-authors include M.M.R. Howlader, Matiar M. R. Howlader, Tadatomo Suga, Fuzhong Zhang, Md Golam Kibria, Robert M. Wallace, M. Catalano, A. Taurino, M.A. Signore and Ning Lü and has published in prestigious journals such as Scripta Materialia, Thin Solid Films and Talanta.

In The Last Decade

M.J. Kim

14 papers receiving 305 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
M.J. Kim United States 9 207 108 69 43 32 15 313
Maria Berdova Finland 8 219 1.1× 159 1.5× 69 1.0× 33 0.8× 25 0.8× 15 315
Shayan Byrappa United States 8 212 1.0× 102 0.9× 62 0.9× 60 1.4× 53 1.7× 16 348
Charles Joubert France 5 270 1.3× 116 1.1× 52 0.8× 135 3.1× 22 0.7× 10 371
Mohd Faizol Abdullah Malaysia 10 146 0.7× 196 1.8× 134 1.9× 24 0.6× 27 0.8× 30 315
Yue Xiao United States 13 108 0.5× 311 2.9× 37 0.5× 64 1.5× 24 0.8× 25 404
Nak-Kwan Chung South Korea 11 167 0.8× 139 1.3× 75 1.1× 52 1.2× 38 1.2× 25 324
Hai Jiang China 11 163 0.8× 250 2.3× 55 0.8× 80 1.9× 8 0.3× 36 363
P.-S. Kuo Taiwan 8 150 0.7× 166 1.5× 95 1.4× 166 3.9× 60 1.9× 19 398
W.W. So United States 8 195 0.9× 131 1.2× 16 0.2× 78 1.8× 55 1.7× 16 338
Jussi Lyytinen Finland 7 179 0.9× 132 1.2× 62 0.9× 11 0.3× 21 0.7× 10 257

Countries citing papers authored by M.J. Kim

Since Specialization
Citations

This map shows the geographic impact of M.J. Kim's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M.J. Kim with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M.J. Kim more than expected).

Fields of papers citing papers by M.J. Kim

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M.J. Kim. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M.J. Kim. The network helps show where M.J. Kim may publish in the future.

Co-authorship network of co-authors of M.J. Kim

This figure shows the co-authorship network connecting the top 25 collaborators of M.J. Kim. A scholar is included among the top collaborators of M.J. Kim based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M.J. Kim. M.J. Kim is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

15 of 15 papers shown
1.
Wang, Zhiqiang, Jun Yang, Xiangyu Zhu, et al.. (2023). K-buserite manganese oxide nanosheets enabling high-efficiency energy storage in aqueous Zn-ion batteries and hybrid supercapacitors. Journal of Energy Storage. 75. 109583–109583. 2 indexed citations
2.
Zhu, Xiangyu, Byung Oh Jung, Qingxiao Wang, et al.. (2022). In-situ STEM study on thermally induced phase transformation of magnetic (Nd0.75Ce0.25)2Fe14B ribbons. Materials & Design. 216. 110525–110525. 2 indexed citations
3.
Taurino, A., M.A. Signore, M. Catalano, & M.J. Kim. (2017). (1 0 1) and (0 0 2) oriented AlN thin films deposited by sputtering. Materials Letters. 200. 18–20. 25 indexed citations
4.
Wang, H., Yulin Hao, Siyuan He, et al.. (2017). Tracing the coupled atomic shear and shuffle for a cubic to a hexagonal crystal transition. Scripta Materialia. 133. 70–74. 47 indexed citations
5.
Catalano, M., A. Taurino, M. Lomascolo, et al.. (2017). Structural and Chemical Assessment of InAs/AlGaAs quantum Dot Structures for Enlarged Bandgap Intermediate Band Solar Cells. Microscopy and Microanalysis. 23(S1). 1478–1479.
6.
Barton, Adam T., Ruoyu Yue, Hui Zhu, et al.. (2015). Transition metal dichalcogenide and hexagonal boron nitride heterostructures grown by molecular beam epitaxy. Microelectronic Engineering. 147. 306–309. 37 indexed citations
7.
Howlader, M.M.R., Md Golam Kibria, Fuzhong Zhang, & M.J. Kim. (2010). Hybrid plasma bonding for void-free strong bonded interface of silicon/glass at 200°C. Talanta. 82(2). 508–515. 37 indexed citations
8.
Howlader, M.M.R., et al.. (2009). Influence of nitrogen microwave radicals on sequential plasma activated bonding. Materials Letters. 64(3). 445–448. 18 indexed citations
9.
Cui, Yonghao, et al.. (2009). Mems-based mechanically tunable flexible photonic crystal. TRANSDUCERS 2009 - 2009 International Solid-State Sensors, Actuators and Microsystems Conference. 509–512. 5 indexed citations
10.
Bhansali, Unnat S., Huiping Jia, Husam N. Alshareef, et al.. (2009). Characterization of organic thin films using transmission electron microscopy and Fourier Transform Infra Red spectroscopy. Thin Solid Films. 517(20). 5825–5829. 6 indexed citations
11.
Howlader, Matiar M. R., Tadatomo Suga, & M.J. Kim. (2007). A Novel Bonding Method for Ionic Wafers. IEEE Transactions on Advanced Packaging. 30(4). 598–604. 31 indexed citations
12.
Kirsch, P. D., Manuel Quevedo-López, Sitaraman Krishnan, et al.. (2006). Band Edge n-MOSFETs with High-k/Metal Gate Stacks Scaled to EOT=0.9nm with Excellent Carrier Mobility and High Temperature Stability. 1–4. 14 indexed citations
13.
14.
Pant, G., Prakaipetch Punchaipetch, M.J. Kim, Robert M. Wallace, & Bruce E. Gnade. (2004). Low temperature UV/ozone oxidation formation of HfSiON gate dielectric. Thin Solid Films. 460(1-2). 242–246. 21 indexed citations
15.
Chidambaram, P.R., Lindsey Hall, H. Bu, et al.. (2004). 35% drive current improvement from recessed-SiGe drain extensions on 37 nm gate length PMOS. 48–49. 65 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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