C. Machala

977 total citations
28 papers, 707 citations indexed

About

C. Machala is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Computational Mechanics. According to data from OpenAlex, C. Machala has authored 28 papers receiving a total of 707 indexed citations (citations by other indexed papers that have themselves been cited), including 26 papers in Electrical and Electronic Engineering, 9 papers in Atomic and Molecular Physics, and Optics and 3 papers in Computational Mechanics. Recurrent topics in C. Machala's work include Advancements in Semiconductor Devices and Circuit Design (18 papers), Semiconductor materials and devices (18 papers) and Silicon and Solar Cell Technologies (10 papers). C. Machala is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (18 papers), Semiconductor materials and devices (18 papers) and Silicon and Solar Cell Technologies (10 papers). C. Machala collaborates with scholars based in United States, Canada and Belgium. C. Machala's co-authors include S. Chakravarthi, V. Reddy, S. Krishnan, A.T. Krishnan, P.R. Chidambaram, R. Wise, C. Bowen, Ping Yang, P.K. Chatterjee and P. Cox and has published in prestigious journals such as IEEE Transactions on Electron Devices, IEEE Electron Device Letters and IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems.

In The Last Decade

C. Machala

25 papers receiving 667 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
C. Machala United States 11 646 102 77 72 61 28 707
Takaaki Tsunomura Japan 18 685 1.1× 109 1.1× 207 2.7× 122 1.7× 57 0.9× 46 828
N. Shigyo Japan 12 494 0.8× 76 0.7× 52 0.7× 34 0.5× 31 0.5× 54 523
S. Chakravarthi United States 12 939 1.5× 135 1.3× 66 0.9× 108 1.5× 39 0.6× 23 996
Y. Toyoshima Japan 16 834 1.3× 137 1.3× 138 1.8× 52 0.7× 50 0.8× 97 864
D. Becher United States 10 613 0.9× 119 1.2× 125 1.6× 34 0.5× 74 1.2× 20 652
M.M. Jevtić Serbia 10 264 0.4× 55 0.5× 69 0.9× 91 1.3× 9 0.1× 55 305
J.-L. Ogier France 7 720 1.1× 54 0.5× 24 0.3× 171 2.4× 22 0.4× 29 749
F. Arnaud France 14 801 1.2× 111 1.1× 101 1.3× 131 1.8× 34 0.6× 63 838
Russell Duane Ireland 10 301 0.5× 124 1.2× 115 1.5× 30 0.4× 9 0.1× 44 395
L. Tosti France 15 773 1.2× 60 0.6× 87 1.1× 62 0.9× 95 1.6× 32 805

Countries citing papers authored by C. Machala

Since Specialization
Citations

This map shows the geographic impact of C. Machala's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C. Machala with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C. Machala more than expected).

Fields of papers citing papers by C. Machala

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C. Machala. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C. Machala. The network helps show where C. Machala may publish in the future.

Co-authorship network of co-authors of C. Machala

This figure shows the co-authorship network connecting the top 25 collaborators of C. Machala. A scholar is included among the top collaborators of C. Machala based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with C. Machala. C. Machala is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Chakravarthi, S., et al.. (2006). Dopant diffusion modeling for heteroepitaxial SiGe∕Si devices. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 24(2). 608–612. 4 indexed citations
2.
Chidambaram, P.R., C. Bowen, S. Chakravarthi, C. Machala, & R. Wise. (2006). Fundamentals of silicon material properties for successful exploitation of strain engineering in modern CMOS manufacturing. IEEE Transactions on Electron Devices. 53(5). 944–964. 141 indexed citations
3.
Chidambaram, P.R., et al.. (2006). Optimizing Channel Strain and Dislocations in PMOS Transistors with Local Epitaxial SiGe. 674–674. 1 indexed citations
4.
Chakravarthi, S., A.T. Krishnan, V. Reddy, C. Machala, & S. Krishnan. (2004). A comprehensive framework for predictive modeling of negative bias temperature instability. 273–282. 256 indexed citations
5.
Chidambaram, P.R., C. Machala, G. Pollack, et al.. (2004). 90 nm CMOS RF technology with 9.0 V I/O capability for single-chip radio. 87–88. 8 indexed citations
6.
Kohli, Puneet, Amitabh Jain, H. Bu, et al.. (2004). Effect of nitride sidewall spacer process on boron dose loss in ultrashallow junction formation. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 22(1). 471–476. 14 indexed citations
7.
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Chakravarthi, S., Puneet Kohli, P.R. Chidambaram, et al.. (2003). Modeling the effect of source/drain sidewall spacer process on boron ultra shallow junctions. 159–162. 7 indexed citations
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Choi, Changhoon, P.R. Chidambaram, R. Khamankar, et al.. (2002). Gate length dependent polysilicon depletion effects. IEEE Electron Device Letters. 23(4). 224–226. 26 indexed citations
13.
Machala, C., et al.. (2002). The effects of thermal processing on CMOS device performance. 62–67. 1 indexed citations
14.
Chakravarthi, S., et al.. (2002). Modeling of Diffusion and Activation of Low Energy Arsenic Implants in Silicon. MRS Proceedings. 717. 1 indexed citations
15.
Choi, Changhoon, P.R. Chidambaram, R. Khamankar, et al.. (2002). Dopant profile and gate geometric effects on polysilicon gate depletion in scaled MOS. IEEE Transactions on Electron Devices. 49(7). 1227–1231. 17 indexed citations
16.
Ukraintsev, Vladimir A., et al.. (2000). High-resolution two-dimensional dopant characterization using secondary ion mass spectrometry. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 18(1). 580–585. 4 indexed citations
17.
Ukraintsev, Vladimir A., R. S. List, Mi-Chang Chang, et al.. (1998). Dopant characterization round-robin study performed on two-dimensional test structures fabricated at Texas Instruments. 741–745. 1 indexed citations
18.
Seitchik, J.A., C. Machala, & Po-Hui Yang. (1989). The determination of SPICE Gummel-Poon parameters by a merged optimization-extraction technique. 30. 275–278. 9 indexed citations
19.
Machala, C., Pratap Pattnaik, & Ping Yang. (1986). An efficient algorithm for the extraction of parameters with high confidence from nonlinear models. IEEE Electron Device Letters. 7(4). 214–218. 10 indexed citations
20.
Yang, Ping, D.E. Hocevar, P. Cox, C. Machala, & P.K. Chatterjee. (1986). An Integrated and Efficient Approach for MOS VLSI Statistical Circuit Design. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 5(1). 5–14. 62 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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