Benedetto Buono

444 total citations
32 papers, 387 citations indexed

About

Benedetto Buono is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Benedetto Buono has authored 32 papers receiving a total of 387 indexed citations (citations by other indexed papers that have themselves been cited), including 32 papers in Electrical and Electronic Engineering, 4 papers in Atomic and Molecular Physics, and Optics and 3 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Benedetto Buono's work include Silicon Carbide Semiconductor Technologies (32 papers), Semiconductor materials and devices (20 papers) and Electromagnetic Compatibility and Noise Suppression (14 papers). Benedetto Buono is often cited by papers focused on Silicon Carbide Semiconductor Technologies (32 papers), Semiconductor materials and devices (20 papers) and Electromagnetic Compatibility and Noise Suppression (14 papers). Benedetto Buono collaborates with scholars based in Sweden, United States and Australia. Benedetto Buono's co-authors include Mikael Östling, Carl‐Mikael Zetterling, Martin Domeij, Reza Ghandi, B. Gunnar Malm, Gunnar Malm, Sergey A. Reshanov, Hyung‐Seok Lee, Adolf Schöner and Anders Hallén and has published in prestigious journals such as IEEE Transactions on Electron Devices, IEEE Electron Device Letters and Materials science forum.

In The Last Decade

Benedetto Buono

31 papers receiving 351 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Benedetto Buono Sweden 9 375 54 48 22 14 32 387
Keiko Fujihira Japan 11 349 0.9× 74 1.4× 66 1.4× 16 0.7× 30 2.1× 24 358
Bo Yi China 11 320 0.9× 21 0.4× 26 0.5× 27 1.2× 17 1.2× 74 337
Siddharth Potbhare United States 10 602 1.6× 63 1.2× 39 0.8× 16 0.7× 21 1.5× 36 616
Toru Hiyoshi Japan 12 657 1.8× 143 2.6× 76 1.6× 20 0.9× 25 1.8× 18 661
Xiaoli Tian China 8 251 0.7× 42 0.8× 50 1.0× 66 3.0× 30 2.1× 37 280
Masatoshi Aketa Japan 10 409 1.1× 59 1.1× 25 0.5× 25 1.1× 7 0.5× 20 414
Kijeong Han United States 16 586 1.6× 44 0.8× 20 0.4× 33 1.5× 9 0.6× 36 593
Junji Cheng China 12 304 0.8× 28 0.5× 31 0.6× 26 1.2× 22 1.6× 62 329
Xintian Zhou China 11 518 1.4× 36 0.7× 14 0.3× 14 0.6× 8 0.6× 41 522
Arash Salemi Sweden 13 428 1.1× 50 0.9× 59 1.2× 31 1.4× 28 2.0× 43 435

Countries citing papers authored by Benedetto Buono

Since Specialization
Citations

This map shows the geographic impact of Benedetto Buono's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Benedetto Buono with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Benedetto Buono more than expected).

Fields of papers citing papers by Benedetto Buono

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Benedetto Buono. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Benedetto Buono. The network helps show where Benedetto Buono may publish in the future.

Co-authorship network of co-authors of Benedetto Buono

This figure shows the co-authorship network connecting the top 25 collaborators of Benedetto Buono. A scholar is included among the top collaborators of Benedetto Buono based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Benedetto Buono. Benedetto Buono is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Zorn, Christian, Nando Kaminski, Martin Domeij, et al.. (2018). H³TRB Test on 1.2 kV SiC MOSFETs. 1–6. 2 indexed citations
2.
Domeij, Martin, Benedetto Buono, Krister Gumaelius, et al.. (2017). Device Simulation Modeling of 1200 V SiC MOSFETs. 1–6. 1 indexed citations
3.
Domeij, Martin, Benedetto Buono, Krister Gumaelius, & Fredrik Allerstam. (2016). Time Resolved Gate Oxide Stress of 4H-SiC Planar MOSFETs and NMOS Capacitors. Materials science forum. 858. 611–614. 1 indexed citations
4.
Salemi, Arash, Hossein Elahipanah, Benedetto Buono, et al.. (2015). Conductivity modulated on-axis 4H-SiC 10+ kV PiN diodes. 269–272. 15 indexed citations
5.
Buono, Benedetto, Fredrik Allerstam, Martin Domeij, et al.. (2014). Stability of Current Gain in SiC BJTs. Materials science forum. 778-780. 1017–1020. 3 indexed citations
6.
Elahipanah, Hossein, Arash Salemi, Benedetto Buono, Carl‐Mikael Zetterling, & Mikael Östling. (2013). Process Variation Tolerant 4H-SiC Power Devices Utilizing Trench Structures. Materials science forum. 740-742. 809–812. 1 indexed citations
7.
Salemi, Arash, Hossein Elahipanah, Benedetto Buono, Carl‐Mikael Zetterling, & Mikael Östling. (2013). Area-Optimized JTE for 4.5 kV Non Ion-Implanted 4H-SiC BJT. Materials science forum. 740-742. 974–977. 8 indexed citations
8.
Domeij, Martin, et al.. (2013). 1200 V, 3.3 mΩ SiC Bipolar Junction Transistor Power Modules. Materials science forum. 740-742. 970–973. 1 indexed citations
9.
Buono, Benedetto, Reza Ghandi, Martin Domeij, et al.. (2012). Investigation of Current Gain Degradation in 4H-SiC Power BJTs. Materials science forum. 717-720. 1131–1134. 1 indexed citations
10.
Buono, Benedetto. (2012). Simulation and Characterization of Silicon Carbide Power Bipolar Junction Transistors. KTH Publication Database DiVA (KTH Royal Institute of Technology). 5 indexed citations
11.
Buono, Benedetto, Reza Ghandi, Martin Domeij, et al.. (2011). Current Gain Degradation in 4H-SiC Power BJTs. Materials science forum. 679-680. 702–705. 7 indexed citations
12.
Östling, Mikael, Reza Ghandi, Gunnar Malm, Benedetto Buono, & Carl‐Mikael Zetterling. (2011). Silicon Carbide Bipolar Power Devices. ECS Meeting Abstracts. MA2011-02(33). 2211–2211. 2 indexed citations
13.
Ghandi, Reza, et al.. (2011). Removal of Crystal Orientation Effects on the Current Gain of 4H-SiC BJTs Using Surface Passivation. IEEE Electron Device Letters. 32(5). 596–598. 6 indexed citations
14.
Ghandi, Reza, Benedetto Buono, Martin Domeij, Carl‐Mikael Zetterling, & Mikael Östling. (2011). High-Voltage (2.8 kV) Implantation-Free 4H-SiC BJTs With Long-Term Stability of the Current Gain. IEEE Transactions on Electron Devices. 58(8). 2665–2669. 26 indexed citations
15.
Buono, Benedetto, Reza Ghandi, Martin Domeij, et al.. (2010). Modeling and Characterization of Current Gain Versus Temperature in 4H-SiC Power BJTs. IEEE Transactions on Electron Devices. 57(3). 704–711. 55 indexed citations
16.
Ghandi, Reza, Benedetto Buono, Martin Domeij, & Mikael Östling. (2010). High Current-Gain Implantation-Free 4H-SiC Monolithic Darlington Transistor. IEEE Electron Device Letters. 32(2). 188–190. 4 indexed citations
17.
Buono, Benedetto, Reza Ghandi, Martin Domeij, et al.. (2010). Influence of Emitter Width and Emitter–Base Distance on the Current Gain in 4H-SiC Power BJTs. IEEE Transactions on Electron Devices. 57(10). 2664–2670. 24 indexed citations
18.
Domeij, Martin, Andrey O. Konstantinov, Reza Ghandi, et al.. (2010). SiC Bipolar Power Transistors - Design and Technology Issues for Ultimate Performance. MRS Proceedings. 1246. 3 indexed citations
19.
Buono, Benedetto, et al.. (2009). Simulations of Open Emitter Breakdown Voltage in SiC BJTs with Non Implanted JTE. Materials science forum. 615-617. 841–844. 4 indexed citations
20.
Ghandi, Reza, Hyung‐Seok Lee, Martin Domeij, et al.. (2008). Fabrication of 2700-V 12-$\hbox{m}\Omega \cdot \hbox{cm}^{2}$ Non Ion-Implanted 4H-SiCBJTs With Common-Emitter Current Gain of 50. IEEE Electron Device Letters. 29(10). 1135–1137. 36 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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