A. Peeva

417 total citations
40 papers, 363 citations indexed

About

A. Peeva is a scholar working on Electrical and Electronic Engineering, Computational Mechanics and Materials Chemistry. According to data from OpenAlex, A. Peeva has authored 40 papers receiving a total of 363 indexed citations (citations by other indexed papers that have themselves been cited), including 37 papers in Electrical and Electronic Engineering, 21 papers in Computational Mechanics and 9 papers in Materials Chemistry. Recurrent topics in A. Peeva's work include Silicon and Solar Cell Technologies (26 papers), Ion-surface interactions and analysis (21 papers) and Integrated Circuits and Semiconductor Failure Analysis (18 papers). A. Peeva is often cited by papers focused on Silicon and Solar Cell Technologies (26 papers), Ion-surface interactions and analysis (21 papers) and Integrated Circuits and Semiconductor Failure Analysis (18 papers). A. Peeva collaborates with scholars based in Germany, Bulgaria and Brazil. A. Peeva's co-authors include W. Skorupa, R. Kögler, M. Behar, P.F.P. Fichtner, Giuseppe Zollo, G. Vitali, M. Kalitzova, P. Werner, A. Paskaleva and E. Atanassova and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

A. Peeva

40 papers receiving 347 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
A. Peeva Germany 12 305 124 123 76 35 40 363
D.E. Ioannou United States 11 400 1.3× 46 0.4× 77 0.6× 146 1.9× 30 0.9× 41 439
W. Vandervorst Belgium 10 282 0.9× 65 0.5× 103 0.8× 92 1.2× 48 1.4× 21 331
H. W. Krautter United States 8 314 1.0× 19 0.2× 208 1.7× 69 0.9× 78 2.2× 12 362
Vinzenz Friedli Switzerland 11 210 0.7× 205 1.7× 106 0.9× 63 0.8× 10 0.3× 13 441
B. Pivac Croatia 10 361 1.2× 21 0.2× 236 1.9× 51 0.7× 33 0.9× 51 395
H. Katsumata Japan 11 291 1.0× 47 0.4× 127 1.0× 236 3.1× 26 0.7× 50 408
S. Mesters Germany 12 308 1.0× 27 0.2× 124 1.0× 231 3.0× 14 0.4× 22 402
P. Warren France 13 457 1.5× 27 0.2× 195 1.6× 270 3.6× 11 0.3× 40 485
Tsunehiro Ino Japan 11 447 1.5× 12 0.1× 152 1.2× 80 1.1× 44 1.3× 27 487
В. С. Просолович Belarus 8 108 0.4× 41 0.3× 81 0.7× 33 0.4× 26 0.7× 65 196

Countries citing papers authored by A. Peeva

Since Specialization
Citations

This map shows the geographic impact of A. Peeva's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Peeva with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Peeva more than expected).

Fields of papers citing papers by A. Peeva

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Peeva. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Peeva. The network helps show where A. Peeva may publish in the future.

Co-authorship network of co-authors of A. Peeva

This figure shows the co-authorship network connecting the top 25 collaborators of A. Peeva. A scholar is included among the top collaborators of A. Peeva based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. Peeva. A. Peeva is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Voelskow, M., Thomas Schumann, A. Mücklich, et al.. (2013). Formation of dendritic crystal structures in thin silicon films on silicon dioxide by carbon ion implantation and high intensity large area flash lamp irradiation. Journal of Crystal Growth. 388. 70–75. 2 indexed citations
2.
Klemm, Denis, et al.. (2008). Analysis of interface impurities in electroplated Cu layers by using GD‐OES and TOF‐SIMS. Surface and Interface Analysis. 40(3-4). 418–422. 23 indexed citations
3.
Kalitzova, M., et al.. (2005). Ion beam synthesis of Te and Bi nanoclusters in silicon: The effect of post-implantation high frequency electromagnetic field. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 242(1-2). 209–213. 1 indexed citations
4.
Atanassova, E., M. Kalitzova, Giuseppe Zollo, et al.. (2003). High temperature-induced crystallization in tantalum pentoxide layers and its influence on the electrical properties. Thin Solid Films. 426(1-2). 191–199. 59 indexed citations
5.
Kögler, R., et al.. (2003). Ion Beam Induced Excess Vacancies in Si and SiGe and Related Cu Gettering. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 95-96. 587–592. 1 indexed citations
6.
Kögler, R., A. Peeva, M. Posselt, et al.. (2003). Cu gettering in ion implanted and annealed silicon in regions before and beyond the mean projected ion range. Journal of Applied Physics. 94(6). 3834–3839. 12 indexed citations
7.
Peeva, A., et al.. (2002). Gettering of copper in silicon at half of the projected ion range induced by helium implantation. Journal of Applied Physics. 91(1). 69–77. 17 indexed citations
8.
Fichtner, P.F.P., et al.. (2002). Implantation temperature dependence of He bubble formation in Si. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 190(1-4). 756–760. 11 indexed citations
9.
Kögler, R., A. Peeva, J.R. Kaschny, W. Skorupa, & Herbert Hutter. (2001). Defect Engineering and Prevention of Impurity Gettering at R<sub>P</sub>/2 in Ion-Implanted Silicon. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 82-84. 399–404. 3 indexed citations
10.
Kögler, R., A. Peeva, P. Werner, W. Skorupa, & U. Gösele. (2001). Gettering centres in high-energy ion-implanted silicon investigated by point defect recombination. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 175-177. 340–344. 8 indexed citations
11.
Peeva, A., et al.. (2001). Helium implantation induced metal gettering in silicon at half of the projected ion range. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 175-177. 176–181. 3 indexed citations
12.
Kögler, R., A. Peeva, A. Mücklich, et al.. (2000). Trans-projected-range gettering of copper in high-energy ion-implanted silicon. Journal of Applied Physics. 88(11). 6934–6936. 1 indexed citations
13.
Peeva, A., et al.. (2000). Metallic impurity gettering to defects remaining in the RP/2 region of MeV-ion implanted and annealed silicon. Materials Science in Semiconductor Processing. 3(4). 297–301. 4 indexed citations
14.
Fichtner, P.F.P., et al.. (2000). Copper gettering at half the projected ion range induced by low-energy channeling He implantation into silicon. Applied Physics Letters. 77(7). 972–974. 10 indexed citations
15.
Fichtner, P.F.P., et al.. (2000). He-induced cavity formation in silicon upon high-temperature implantation. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 161-163. 1038–1042. 15 indexed citations
16.
Kögler, R., A. Peeva, W. Anwand, et al.. (1999). Interstitial-type defects away from the projected ion range in high energy ion implanted and annealed silicon. Applied Physics Letters. 75(9). 1279–1281. 26 indexed citations
17.
Peeva, A., et al.. (1999). Kinetic model of a pulsed He-Zn hollow cathode laser. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 3571. 154–154. 1 indexed citations
18.
Kögler, R., et al.. (1999). Gettering Centres for Metals and Oxygen Formed in MeV-Ion-Implanted and Annealed Silicon. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 69-70. 235–240. 7 indexed citations
19.
Peeva, A., et al.. (1970). Self-quenching GM counters with heated anode. Nuclear Instruments and Methods. 87(2). 237–240. 3 indexed citations
20.
Peeva, A., et al.. (1966). Dead time and fatigue in self-quenching G.M. counters at different temperatures. Nuclear Instruments and Methods. 44(2). 314–316. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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