T. Bachmann

817 total citations
49 papers, 647 citations indexed

About

T. Bachmann is a scholar working on Electrical and Electronic Engineering, Computational Mechanics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, T. Bachmann has authored 49 papers receiving a total of 647 indexed citations (citations by other indexed papers that have themselves been cited), including 39 papers in Electrical and Electronic Engineering, 27 papers in Computational Mechanics and 14 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in T. Bachmann's work include Ion-surface interactions and analysis (26 papers), Silicon and Solar Cell Technologies (21 papers) and Thin-Film Transistor Technologies (13 papers). T. Bachmann is often cited by papers focused on Ion-surface interactions and analysis (26 papers), Silicon and Solar Cell Technologies (21 papers) and Thin-Film Transistor Technologies (13 papers). T. Bachmann collaborates with scholars based in Germany, Belarus and Switzerland. T. Bachmann's co-authors include W. Wesch, E. Wendler, E. Glaser, A. Heft, Markus Wagner, C. Redaelli, Bruno M. Schmied, C Seiler, M.W. Büchler and Waldemar Uhl and has published in prestigious journals such as Journal of Applied Physics, Applied Surface Science and British journal of surgery.

In The Last Decade

T. Bachmann

48 papers receiving 627 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
T. Bachmann Germany 13 382 199 165 159 128 49 647
Hiroshi Umeda Japan 12 160 0.4× 19 0.1× 42 0.3× 158 1.0× 44 0.3× 68 488
D. S. Shen United States 16 347 0.9× 14 0.1× 97 0.6× 234 1.5× 57 0.4× 78 720
Hiroshi Nishi Japan 17 225 0.6× 12 0.1× 34 0.2× 212 1.3× 181 1.4× 83 689
Andrew Lange United States 12 94 0.2× 23 0.1× 27 0.2× 130 0.8× 27 0.2× 27 437
Katsumasa Iwai Japan 12 271 0.7× 23 0.1× 26 0.2× 22 0.1× 115 0.9× 65 427
Shigeru Suzuki Japan 15 355 0.9× 13 0.1× 19 0.1× 48 0.3× 212 1.7× 63 704
Jong Woon Bae South Korea 17 237 0.6× 27 0.1× 29 0.2× 129 0.8× 23 0.2× 43 689
Masaki Ueda Japan 12 221 0.6× 102 0.5× 13 0.1× 313 2.0× 155 1.2× 35 658
Xuming Xiong China 16 234 0.6× 14 0.1× 21 0.1× 272 1.7× 103 0.8× 43 963
Zhi-Min Jiang China 13 50 0.1× 17 0.1× 100 0.6× 74 0.5× 29 0.2× 27 351

Countries citing papers authored by T. Bachmann

Since Specialization
Citations

This map shows the geographic impact of T. Bachmann's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T. Bachmann with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T. Bachmann more than expected).

Fields of papers citing papers by T. Bachmann

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T. Bachmann. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T. Bachmann. The network helps show where T. Bachmann may publish in the future.

Co-authorship network of co-authors of T. Bachmann

This figure shows the co-authorship network connecting the top 25 collaborators of T. Bachmann. A scholar is included among the top collaborators of T. Bachmann based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with T. Bachmann. T. Bachmann is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Bachmann, T., W. Vonau, & Peter John. (2002). Study of the structure of passivated vanadium-titanium alloys and their semiconductor properties. Analytical and Bioanalytical Chemistry. 374(4). 715–719. 8 indexed citations
3.
Kollewe, D., T. Bachmann, & Wilfried Sigle. (1999). Redistribution of implanted Er in SiO2 on Si studied by combined transmission electron microscopy and Rutherford backscattering analysis. Physics Letters A. 253(5-6). 305–308. 2 indexed citations
4.
Bachmann, T., et al.. (1999). He+ implantation for waveguide fabrication in KTP and Rb:KTP. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 148(1-4). 710–714. 17 indexed citations
5.
Bachmann, T., Roberto Menzel, W. Wesch, & Carsten Schmidt. (1998). Maskless patterning of KTiOPO4 crystals by focused ion beam. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 139(1-4). 318–321. 4 indexed citations
6.
Menzel, Roberto, T. Bachmann, W. Wesch, & H. Hobert. (1998). Maskless sub-μm patterning of silicon carbide using a focused ion beam in combination with wet chemical etching. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 16(2). 540–543. 7 indexed citations
7.
Bachmann, T., et al.. (1998). Refractive Index Profiles and Exchange Ratios of Proton-Exchanged Waveguides in Congruent and MgO-Doped LiNbO3. physica status solidi (a). 165(1). 205–212. 4 indexed citations
8.
Glaser, E., et al.. (1997). Ion Beam Induced Epitaxial Regrowth and Interfacial Amorphization of Compound Semiconductors. Materials science forum. 248-249. 79–86. 5 indexed citations
9.
Schulz, Robert, T. Bachmann, Ute Kaiser, & E. Glaser. (1996). Optimum temperature for ion beam induced crystallization of GaAs. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 117(1-2). 207–209. 2 indexed citations
10.
Schulz, Robert, T. Bachmann, E. Glaser, & П. И. Гайдук. (1996). Ion beam induced nucleation in amorphous GaAs layers during MeV implantation. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 120(1-4). 203–206. 1 indexed citations
11.
Bachmann, T., et al.. (1995). Ion beam induced epitaxial crystallization and interfacial amorphization at amorphous/crystalline interfaces in germanium. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 106(1-4). 350–354. 7 indexed citations
12.
Heft, A., E. Wendler, T. Bachmann, E. Glaser, & W. Wesch. (1995). Defect production and annealing in ion implanted silicon carbide. Materials Science and Engineering B. 29(1-3). 142–146. 38 indexed citations
13.
Wesch, W., A. Heft, E. Wendler, T. Bachmann, & E. Glaser. (1995). High temperature ion implantation of silicon carbide. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 96(1-2). 335–338. 39 indexed citations
14.
Bachmann, T., E. Wendler, W. Wesch, et al.. (1995). Damage production during MeV ion implantation in GaAs and InAs. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 99(1-4). 619–622. 6 indexed citations
15.
Wendler, E., T. Bachmann, & W. Wesch. (1993). Differences of Damage Production in GaAs and InP after MeV and Low Energy Ion Implantation. MRS Proceedings. 300. 3 indexed citations
16.
Kögler, R., V. Heera, W. Skorupa, et al.. (1993). Reduced reverse temperature of ion beam induced amorphization/ crystallization for intermittent beam irradiation of silicon?. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 80-81. 556–558. 12 indexed citations
17.
Bachmann, T., W. Wesch, K. Gärtner, & E. Wendler. (1992). Differences in the damage production of proton implanted GaAs, Ge and Si investigated by temperature dependent dechanneling. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 63(1-2). 64–67. 5 indexed citations
18.
Bachmann, T., et al.. (1991). Investigation of proton exchanged optical waveguides in LiNbO3 using elastic recoil detection. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 61(1). 91–93. 7 indexed citations
19.
Wesch, W., et al.. (1991). Annealing of shallow implants in Si by excimer laser irradiation. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 53(2). 173–177. 1 indexed citations
20.
Bachmann, T., et al.. (1989). The microstructure of short-time-annealed Se+ -implanted GaAs. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 43(4). 529–534. 11 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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