E. Glaser

465 total citations
31 papers, 390 citations indexed

About

E. Glaser is a scholar working on Electrical and Electronic Engineering, Computational Mechanics and Materials Chemistry. According to data from OpenAlex, E. Glaser has authored 31 papers receiving a total of 390 indexed citations (citations by other indexed papers that have themselves been cited), including 25 papers in Electrical and Electronic Engineering, 16 papers in Computational Mechanics and 9 papers in Materials Chemistry. Recurrent topics in E. Glaser's work include Silicon and Solar Cell Technologies (20 papers), Ion-surface interactions and analysis (15 papers) and Thin-Film Transistor Technologies (14 papers). E. Glaser is often cited by papers focused on Silicon and Solar Cell Technologies (20 papers), Ion-surface interactions and analysis (15 papers) and Thin-Film Transistor Technologies (14 papers). E. Glaser collaborates with scholars based in Germany, France and Belarus. E. Glaser's co-authors include W. Wesch, T. Bachmann, E. Wendler, G. Götz, A. Heft, H.‐D. Geiler, J. Heindl, H. P. Strunk, Robert Schulz and Н. А. Соболев and has published in prestigious journals such as Physical review. B, Condensed matter, Journal of Applied Physics and Applied Surface Science.

In The Last Decade

E. Glaser

30 papers receiving 374 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
E. Glaser Germany 11 291 168 157 63 39 31 390
A. Manara Italy 11 124 0.4× 221 1.3× 79 0.5× 127 2.0× 75 1.9× 27 351
Tianxing Ma United States 11 340 1.2× 124 0.7× 44 0.3× 33 0.5× 100 2.6× 23 449
S. Squelard France 9 443 1.5× 465 2.8× 61 0.4× 69 1.1× 65 1.7× 17 565
Masatoshi Wakagi Japan 13 484 1.7× 471 2.8× 58 0.4× 45 0.7× 79 2.0× 34 592
R.A. Kushner United States 9 250 0.9× 97 0.6× 90 0.6× 36 0.6× 49 1.3× 18 323
E. A. Irene United States 5 286 1.0× 231 1.4× 44 0.3× 28 0.4× 53 1.4× 5 385
L. Gea United States 11 161 0.6× 252 1.5× 64 0.4× 18 0.3× 35 0.9× 21 346
M. Nerding Germany 12 412 1.4× 334 2.0× 59 0.4× 25 0.4× 61 1.6× 28 498
Kunihiro Yagi Japan 10 342 1.2× 169 1.0× 131 0.8× 10 0.2× 105 2.7× 16 416
Pawan Bhat India 12 239 0.8× 250 1.5× 16 0.1× 60 1.0× 42 1.1× 38 323

Countries citing papers authored by E. Glaser

Since Specialization
Citations

This map shows the geographic impact of E. Glaser's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by E. Glaser with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites E. Glaser more than expected).

Fields of papers citing papers by E. Glaser

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by E. Glaser. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by E. Glaser. The network helps show where E. Glaser may publish in the future.

Co-authorship network of co-authors of E. Glaser

This figure shows the co-authorship network connecting the top 25 collaborators of E. Glaser. A scholar is included among the top collaborators of E. Glaser based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with E. Glaser. E. Glaser is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Carlos, W. E., E. Glaser, B. V. Shanabrook, & Tadhg Kennedy. (2003). The Role of the Carbon Vacancy - Carbon Antisite Defect in Semi-Insulating 4h Silicon Carbide. APS. 2003. 2 indexed citations
2.
Gasparov, V. A., Г. К. Струкова, N. S. Sidorov, et al.. (2001). Superconducting and anomalous electron transport properties and electronic structure ofBaNbO3−xandBa2Nb5Oxfilms. Physical review. B, Condensed matter. 63(17). 18 indexed citations
3.
Wendler, E., N. Dharmarasu, & E. Glaser. (2000). Comparison between the reversal temperature of IBIEC–IBIIA transition and critical temperatures of damage formation in ion irradiated InP and InAs. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 160(2). 257–261. 6 indexed citations
4.
Glaser, E., et al.. (1999). Comparison of nucleation and growth of the crystalline and amorphous phase during MeV-ion irradiation of amorphous/crystalline interfaces. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 148(1-4). 426–431. 6 indexed citations
5.
Glaser, E., et al.. (1997). Ion Beam Induced Epitaxial Regrowth and Interfacial Amorphization of Compound Semiconductors. Materials science forum. 248-249. 79–86. 5 indexed citations
6.
Schulz, Robert, T. Bachmann, Ute Kaiser, & E. Glaser. (1996). Optimum temperature for ion beam induced crystallization of GaAs. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 117(1-2). 207–209. 2 indexed citations
7.
Wendler, E., A. Heft, U. Zammit, et al.. (1996). Sub-gap optical properties of ion implanted SiC. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 116(1-4). 398–403. 26 indexed citations
8.
Schulz, Robert, T. Bachmann, E. Glaser, & П. И. Гайдук. (1996). Ion beam induced nucleation in amorphous GaAs layers during MeV implantation. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 120(1-4). 203–206. 1 indexed citations
9.
Bachmann, T., et al.. (1995). Ion beam induced epitaxial crystallization and interfacial amorphization at amorphous/crystalline interfaces in germanium. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 106(1-4). 350–354. 7 indexed citations
10.
Heft, A., E. Wendler, T. Bachmann, E. Glaser, & W. Wesch. (1995). Defect production and annealing in ion implanted silicon carbide. Materials Science and Engineering B. 29(1-3). 142–146. 38 indexed citations
11.
Wesch, W., A. Heft, E. Wendler, T. Bachmann, & E. Glaser. (1995). High temperature ion implantation of silicon carbide. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 96(1-2). 335–338. 39 indexed citations
12.
Heera, V., R. Kögler, W. Skorupa, & E. Glaser. (1993). Ion Beam Induced Epitaxial Crystallization of Single Crystalline 6H-SiC. MRS Proceedings. 316. 2 indexed citations
13.
Molnár, Bálint, T. A. Kennedy, E. Glaser, & H.B. Dietrich. (1993). Observation of ion-implantation-damage-created n-type conductivity in InP after high-temperature annealing. Journal of Applied Physics. 74(5). 3091–3098. 10 indexed citations
14.
Kögler, R., V. Heera, W. Skorupa, et al.. (1993). Reduced reverse temperature of ion beam induced amorphization/ crystallization for intermittent beam irradiation of silicon?. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 80-81. 556–558. 12 indexed citations
15.
Geiler, H.‐D., et al.. (1989). Explosive crystallization phenomena in SOI structures. Applied Surface Science. 36(1-4). 632–639. 1 indexed citations
16.
Geiler, H.‐D., et al.. (1989). Explosive crystallization phenomena in SOI structures. Journal of materials research/Pratt's guide to venture capital sources. 4(6). 1473–1479.
17.
Andrä, G., et al.. (1987). Explosive crystallization of ion-implanted silicon layers. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 19-20. 571–576. 6 indexed citations
18.
Glaser, E., G. Götz, Н. А. Соболев, & W. Wesch. (1982). Investigations of Radiation Damage Production in Ion Implanated Silicon. physica status solidi (a). 69(2). 603–614. 20 indexed citations
19.
Glaser, E.. (1981). Im Umfeld des Austromarxismus : ein Beitrag zur Geistesgeschichte des österreichischen Sozialismus. 7 indexed citations
20.
Götz, G., et al.. (1975). Investigation of radiation damage in silicon by a backscattering method. Radiation Effects. 25(1). 27–32. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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