E. Valcheva

1.4k citations

107 papers · 1.2k indexed · h-index 17

Impact in

Condensed Matter Physics top 2%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 5%
- Ga2O3 and related materials

Papers in ⓘ

Materials Chemistry 64
- Diamond and Carbon-based Materials Research 28
- Graphene research and applications 23
- ZnO doping and properties 20
Condensed Matter Physics 48
- GaN-based semiconductor devices and materials 48

Co-authors: T. Paskova (29 shared papers)B. Ḿonemar (28 shared papers)B. Arnaudov (14 shared papers)Vanya Darakchieva (13 shared papers)B. Monemar (7 shared papers)H. J. Lü (5 shared papers)Per O. Å. Persson (13 shared papers)Isamu Akasaki (9 shared papers)
Journals: Journal of Crystal Growth (5 papers)Journal of Applied Physics (4 papers)Superlattices and Microstructures (4 papers)Materials Science and Engineering B (4 papers)Applied Physics Letters (4 papers)
Partner nations: Bulgaria Sweden Germany

In The Last Decade

E. Valcheva

104 papers receiving 1.2k citations

Peers

Countries citing papers authored by E. Valcheva

Since Specialization

Citations

This map shows the geographic impact of E. Valcheva's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by E. Valcheva with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites E. Valcheva more than expected).

Fields of papers citing papers by E. Valcheva

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by E. Valcheva. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by E. Valcheva. The network helps show where E. Valcheva may publish in the future.

Co-authors

The 25 scholars most cited alongside E. Valcheva, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with E. Valcheva Line = papers co-authored together E. Valcheva links everyone, so they are left out of the graph.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Showing the 20 most-cited of 107 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Energy position of near-band-edge emission spectra of InN epitaxial layers with different doping levels Physical Review B ·B. Arnaudov, T. Paskova, T. Paskova, Björn Magnusson, E. Valcheva, B. Monemar, H. J. Lü, W. J. Schaff, Hiroshi Amano, Isamu Akasaki	2004	157
2	Large-scale synthesis of free-standing N-doped graphene using microwave plasma Scientific Reports ·N. Bundaleska, J. Henriques, M. V. Abrashev, A.M. Botelho do Rego, Ana M. Ferraria, A. Almeida, F. M. Dias, E. Valcheva, B. Arnaudov, Kush K. Upadhyay, M.F. Montemor, E. Tatarova	2018	100
3	Towards large-scale in free-standing graphene and N-graphene sheets Scientific Reports ·E. Tatarova, Ana Dias, J. Henriques, M. V. Abrashev, N. Bundaleska, Eva Kovačević, Nenad Bundaleski, Uroš Cvelbar, E. Valcheva, B. Arnaudov, A.M. Botelho do Rego, Ana M. Ferraria, Johannes Berndt, Edgar Felizardo, Orlando M.N.D. Teodoro, Th. Strunskus, L. L. Alves, B. Gonçalves	2017	81
4	Properties of nonpolar a-plane GaN films grown by HVPE with AlN buffers Journal of Crystal Growth ·T. Paskova, Vanya Darakchieva, T. Paskova, Jens Birch, E. Valcheva, Per O. Å. Persson, B. Arnaudov, S. Tungasmitta, B. Monemar	2005	59
5	Bragg and Laue x-ray diffraction study of dislocations in thick hydride vapor phase epitaxy GaN films Journal of Applied Physics ·В. В. Ратников, R. N. Kyutt, T. V. Shubina, T. Paskova, E. Valcheva, B. Ḿonemar	2000	41
6	InNdielectric function from the midinfrared to the ultraviolet range Physical Review B ·A. Kasic, E. Valcheva, B. Ḿonemar, H. J. Lü, W. J. Schaff	2004	40
7	Deformation potentials of the E1(TO) and E2 modes of InN Applied Physics Letters ·Vanya Darakchieva, T. Paskova, E. Valcheva, Tania Paskova, B. Monemar, M. Schubert, H. J. Lü, W. J. Schaff	2004	38
8	Phonon mode behavior in strained wurtziteAlN∕GaNsuperlattices Physical Review B ·Vanya Darakchieva, E. Valcheva, T. Paskova, M. Schubert, B. Monemar, Hiroshi Amano, Isamu Akasaki	2005	36
9	Multilayer model for Hall effect data analysis of semiconductor structures with step-changed conductivity Physical review. B, Condensed matter ·B. Arnaudov, T. Paskova, S. Evtimova, E. Valcheva, M. Heuken, B. Ḿonemar	2003	35
10	Lattice parameters of GaN layers grown on a-plane sapphire: Effect of in-plane strain anisotropy Applied Physics Letters ·Vanya Darakchieva, T. Paskova, T. Paskova, E. Valcheva, B. Ḿonemar, M. Heuken	2003	32
11	Optical and dielectric properties of dc magnetron sputtered AlN thin films correlated with deposition conditions Materials Science and Engineering B ·V. Dimitrova, D. Manova, E. Valcheva	1999	28
12	Defect and stress relaxation in HVPE-GaN films using high temperature reactively sputtered AlN buffer Journal of Crystal Growth ·T. Paskova, E. Valcheva, Jens Birch, Sukkaneste Tungasmita, Per O. Å. Persson, T. Paskova, S. Evtimova, M. V. Abrashev, B. Ḿonemar	2001	26
13	Interface structure of hydride vapor phase epitaxial GaN grown with high-temperature reactively sputtered AlN buffer Applied Physics Letters ·E. Valcheva, T. Paskova, Sukkaneste Tungasmita, Per O. Å. Persson, Jens Birch, E.B. Svedberg, Lars Hultman, B. Ḿonemar	2000	25
14	Prospects for microwave plasma synthesized N-graphene in secondary electron emission mitigation applications Scientific Reports ·N. Bundaleska, Ana Dias, Nenad Bundaleski, Edgar Felizardo, J. Henriques, Д. Л. Цыганов, M. V. Abrashev, E. Valcheva, J. Kissovski, Ana M. Ferraria, A.M. Botelho do Rego, A. Almeida, Janez Zavašnik, Uroš Cvelbar, Orlando M.N.D. Teodoro, Th. Strunskus, E. Tatarova	2020	21
15	Hydride vapor-phase epitaxial GaN thick films for quasi-substrate applications: Strain distribution and wafer bending Journal of Electronic Materials ·T. Paskova, Vanya Darakchieva, E. Valcheva, Ivan G. Ivanov, B. Ḿonemar, T. Böttcher, C. Roder, D. Hommel	2004	20
16	Epitaxial growth and orientation of AlN thin films on Si(001) substrates deposited by reactive magnetron sputtering Journal of Applied Physics ·E. Valcheva, Jens Birch, Per O. Å. Persson, Sukkaneste Tungasmita, Lars Hultman	2006	17
17	Nanopipes and their relationship to the growth mode in thick HVPE-GaN layers Journal of Crystal Growth ·E. Valcheva, Tania Paskova, B. Ḿonemar	2003	16
18	Raman Spectroscopic Study of As-Deposited and Exfoliated Defected Graphene Grown on (001) Si Substrates by CVD Journal of Spectroscopy ·T. I. Milenov, E. Valcheva, V. N. Popov	2017	15
19	Infrared ellipsometry and Raman studies of hexagonal InN films: correlation between strain and vibrational properties Superlattices and Microstructures ·Vanya Darakchieva, T. Paskova, E. Valcheva, Tania Paskova, M. Schubert, Carsten Bundesmann, H. J. Lü, W. J. Schaff, B. Monemar	2004	15
20	Elimination of nonuniformities in thick GaN films using metalorganic chemical vapor deposited GaN templates Journal of Applied Physics ·E. Valcheva, T. Paskova, M. V. Abrashev, T. Paskova, Per O. Å. Persson, Ewa M. Goldys, R. Beccard, M. Heuken, B. Ḿonemar	2001	14

About E. Valcheva

E. Valcheva is a scholar working on Materials Chemistry, Condensed Matter Physics, Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials, having authored 107 papers that have together received 1.2k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (48 papers), Diamond and Carbon-based Materials Research (28 papers), Semiconductor materials and devices (27 papers), Graphene research and applications (23 papers), Semiconductor Quantum Structures and Devices (22 papers), Ga2O3 and related materials (20 papers), ZnO doping and properties (20 papers) and Metal and Thin Film Mechanics (17 papers). The work is most often cited by research in Condensed Matter Physics (667 citations), Electronic, Optical and Magnetic Materials (434 citations), Materials Chemistry (715 citations), Mechanics of Materials (211 citations) and Atomic and Molecular Physics, and Optics (258 citations). E. Valcheva has collaborated with scholars based in Bulgaria, Sweden and Germany. Frequent co-authors include T. Paskova, B. Ḿonemar, B. Arnaudov, Vanya Darakchieva, B. Monemar, H. J. Lü, Per O. Å. Persson, Isamu Akasaki, Hiroshi Amano and W. J. Schaff. Their work appears in journals such as Journal of Crystal Growth, Journal of Applied Physics, Superlattices and Microstructures, Materials Science and Engineering B and Applied Physics Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact