U. Lindefelt

4.2k citations

88 papers · 3.5k indexed · h-index 30

Impact in

Electrical and Electronic Engineering top 1%
- Silicon Carbide Semiconductor Technologies
- Semiconductor materials and devices
- Silicon and Solar Cell Technologies
- Electromagnetic Compatibility and Noise Suppression
- Thin-Film Transistor Technologies
- Advancements in Semiconductor Devices and Circuit Design
Ceramics and Composites top 2%
- Advanced ceramic materials synthesis

Papers in

Electrical and Electronic Engineering 76
- Silicon Carbide Semiconductor Technologies 53
- Semiconductor materials and devices 39
- Silicon and Solar Cell Technologies 14
- Advancements in Semiconductor Devices and Circuit Design 10
Atomic and Molecular Physics, and Optics 39
- Semiconductor materials and interfaces 33
- Semiconductor Quantum Structures and Devices 11
- Surface and Thin Film Phenomena 10

Co-authors: Clas Persson Alex Zunger Hisaomi Iwata Sven Öberg Andrey O. Konstantinov P. R. Briddon N. Nordell Q. Wahab
Journals: Physical review. B, Condensed matter (22 papers)Journal of Applied Physics (13 papers)Applied Physics Letters (5 papers)Solid State Communications (2 papers)Semiconductor Science and Technology (2 papers)
Partner nations: Sweden Switzerland United States

In The Last Decade

U. Lindefelt

88 papers receiving 3.3k citations

Peers

Countries citing papers authored by U. Lindefelt

Since Specialization

Citations

This map shows the geographic impact of U. Lindefelt's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by U. Lindefelt with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites U. Lindefelt more than expected).

Fields of papers citing papers by U. Lindefelt

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by U. Lindefelt. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by U. Lindefelt. The network helps show where U. Lindefelt may publish in the future.

Co-authorship network

The 25 scholars most cited alongside U. Lindefelt, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with U. Lindefelt Line = papers co-authored together U. Lindefelt links everyone, so they are left out of the graph.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work
1	High-field electron transport in semiconducting zigzag carbon nanotubes Nanotechnology ·L.S. Yermukhanova, U. Lindefelt	2012	2
2	Electron–Phonon Scattering Rates in Semiconducting Zig-Zag Carbon Nanotubes Journal of Computational and Theoretical Nanoscience ·L.S. Yermukhanova, U. Lindefelt	2011	1
3	Electron-phonon and electron-defect scattering rates in semiconducting zigzag carbon nanotubes L.S. Yermukhanova, U. Lindefelt	2010	1
4	Insight into the Degradation Phenomenon in SiC Devices from Ab Initio Calculations of the Electronic Structure of Single and Multiple Stacking Faults Materials science forum ·U. Lindefelt, Hisaomi Iwata, Sven Öberg, P. R. Briddon	2003	3
5	Electronic Structure of Twin Boundaries in 3C-SiC, Si and Diamond Materials science forum ·Hisaomi Iwata, U. Lindefelt, Sven Öberg, P. R. Briddon	2003	5
6	Stacking faults in3C−, 4H−,and6H−SiCpolytypes investigated by anab initiosupercell method Physical review. B, Condensed matter ·U. Lindefelt, Hisaomi Iwata, Sven Öberg, P. R. Briddon	2003	144
7	A new type of quantum wells: stacking faults in silicon carbide Microelectronics Journal ·Hisaomi Iwata, U. Lindefelt, Sven Öberg, P. R. Briddon	2003	18
8	Energies and electronic properties of isolated and interacting twin boundaries in3C−SiC,Si, and diamond Physical review. B, Condensed matter ·Hisaomi Iwata, U. Lindefelt, S. Öberg, P. R. Briddon	2003	12
9	Crystal Defects as Source of Anomalous Forward Voltage Increase of 4H-SiC Diodes Materials science forum ·Peder Bergman, H. Lendenmann, Per Åke Nilsson, U. Lindefelt, P. Skytt	2001	340
10	Plasma-induced band edge shifts in 3C-, 2H-, 4H-, 6H–SiC and Si Solid-State Electronics ·Clas Persson, U. Lindefelt, Bo E. Sernelius	2000	17
11	Temperature dependence of avalanche breakdown for epitaxial diodes in 4H silicon carbide Applied Physics Letters ·Andrey O. Konstantinov, N. Nordell, Q. Wahab, U. Lindefelt	1998	32
12	Electronic structure of 6H-SiC(0001) Physical review. B, Condensed matter ·L. I. Johansson, Fredrik Owman, Per Mårtensson, Clas Persson, U. Lindefelt	1996	47
13	Detailed band structure for 3C-, 2H-, 4H-, 6H-SiC, and Si around the fundamental band gap Physical review. B, Condensed matter ·Clas Persson, U. Lindefelt	1996	126
14	Heat generation in semiconductor devices Journal of Applied Physics ·U. Lindefelt	1994	68
15	Current-density relations for nonisothermal modeling of degenerate heterostructure devices Journal of Applied Physics ·U. Lindefelt	1994	10
16	The influence of emitter properties on the heat generation in SiC and Si PIN diodes under forward conduction Physica Scripta ·O. Tornblad, K. A. Dikikh, Mikael Östling, U. Lindefelt	1994	2
17	Electronic structure of neutral and charged vacancies in GaAs Physical review. B, Condensed matter ·H. Q. Xu, U. Lindefelt	1990	65
18	Local-environment approach for deep-level defects in semiconductors: Application to the vacancy in silicon. PubMed ·Prakash Satyasheel, U. Lindefelt	1988	14
19	First- and second-nearest-neighbor divacancies in silicon: Origin and ordering of gap levels Physical review. B, Condensed matter ·U. Lindefelt, Prakash Satyasheel	1988	12
20	Electronic structure of transition-atom impurities in semiconductors: Substitutional3dimpurities in silicon Physical review. B, Condensed matter ·Alex Zunger, U. Lindefelt	1983	69

About U. Lindefelt

U. Lindefelt is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Ceramics and Composites and Materials Chemistry, having authored 88 papers that have together received 3.5k indexed citations. Recurring topics across this work include Silicon Carbide Semiconductor Technologies (53 papers), Semiconductor materials and devices (39 papers), Semiconductor materials and interfaces (33 papers), Silicon and Solar Cell Technologies (14 papers), Copper Interconnects and Reliability (14 papers), Semiconductor Quantum Structures and Devices (11 papers), Advancements in Semiconductor Devices and Circuit Design (10 papers) and Surface and Thin Film Phenomena (10 papers). The work is most often cited by research in Electrical and Electronic Engineering (2.9k citations), Ceramics and Composites (292 citations), Atomic and Molecular Physics, and Optics (1.2k citations), Electronic, Optical and Magnetic Materials (446 citations) and Condensed Matter Physics (208 citations). U. Lindefelt has collaborated with scholars based in Sweden, Switzerland and United States. Frequent co-authors include Clas Persson, Alex Zunger, Hisaomi Iwata, Sven Öberg, Andrey O. Konstantinov, P. R. Briddon, N. Nordell, Q. Wahab, Per Åke Nilsson and Peder Bergman. Their work appears in journals such as Physical review. B, Condensed matter, Journal of Applied Physics, Applied Physics Letters, Solid State Communications and Semiconductor Science and Technology.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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