Hidekazu Tsuchida

4.1k total citations
208 papers, 3.4k citations indexed

About

Hidekazu Tsuchida is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Hidekazu Tsuchida has authored 208 papers receiving a total of 3.4k indexed citations (citations by other indexed papers that have themselves been cited), including 204 papers in Electrical and Electronic Engineering, 61 papers in Atomic and Molecular Physics, and Optics and 49 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Hidekazu Tsuchida's work include Silicon Carbide Semiconductor Technologies (197 papers), Semiconductor materials and devices (77 papers) and Semiconductor materials and interfaces (59 papers). Hidekazu Tsuchida is often cited by papers focused on Silicon Carbide Semiconductor Technologies (197 papers), Semiconductor materials and devices (77 papers) and Semiconductor materials and interfaces (59 papers). Hidekazu Tsuchida collaborates with scholars based in Japan, United States and Switzerland. Hidekazu Tsuchida's co-authors include Isaho Kamata, Tetsuya Miyazawa, Masahiro Nagano, L. Storasta, I. Kamata, Masahiko Ito, Kunikazu Izumi, Xuan Zhang, Takehiko Tawara and Tsunenobu Kimoto and has published in prestigious journals such as Nature Communications, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Hidekazu Tsuchida

202 papers receiving 3.3k citations

Peers

Countries citing papers authored by Hidekazu Tsuchida

Since Specialization

Citations

This map shows the geographic impact of Hidekazu Tsuchida's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Hidekazu Tsuchida with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Hidekazu Tsuchida more than expected).

Fields of papers citing papers by Hidekazu Tsuchida

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Hidekazu Tsuchida. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Hidekazu Tsuchida. The network helps show where Hidekazu Tsuchida may publish in the future.

Co-authorship network of co-authors of Hidekazu Tsuchida

This figure shows the co-authorship network connecting the top 25 collaborators of Hidekazu Tsuchida. A scholar is included among the top collaborators of Hidekazu Tsuchida based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Hidekazu Tsuchida. Hidekazu Tsuchida is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Coherent photoelectrical readout of single spins in silicon carbide at room temperature 2025 ·Nature Communications ·(unknown), Naoya Morioka, Hiroshi Abe, Koichi Murata, (unknown), Takeshi Ohshima, Hidekazu Tsuchida, Norikazu Mizuochi	0
2	Advances in fast 4H–SiC crystal growth and defect reduction by high-temperature gas-source method 2024 ·Materials Science in Semiconductor Processing ·Hidekazu Tsuchida, Takahiro Kanda	8
3	Impacts of single Shockley-type stacking faults on current conduction in 4H-SiC PiN diodes 2024 ·Journal of Applied Physics ·Satoshi Asada, Koichi Murata, Hidekazu Tsuchida	2
4	Quality Evaluation of 150 mm 4H-SiC Grown at over 1.5 mm/h by High-Temperature Chemical Vapor Deposition Method 2023 ·Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena ·Takeshi Okamoto, (unknown), Takahiro Kanda, (unknown), (unknown), (unknown), (unknown), (unknown), Norihiro Hoshino, Isaho Kamata, Hidekazu Tsuchida	8
5	Optically detected magnetic resonance of silicon vacancies in 4H-SiC at elevated temperatures toward magnetic sensing under harsh environments 2023 ·Journal of Applied Physics ·(unknown), Shin Sato, Seiichi Saiki, Y. MASUYAMA, (unknown), Takeshi Ohshima, Koichi Murata, Hidekazu Tsuchida, Yasuto Hijikata	9
6	Experimental determination of intrinsic carrier density in 4H-SiC based on electron diffusion current in an npn bipolar junction transistor 2023 ·Journal of Applied Physics ·(unknown), Koichi Murata, Hajime Tanaka, Hidekazu Tsuchida	5
7	Modeling of Stacking Faults in 4H-SiC n-Type Epilayer for TCAD Simulation 2023 ·IEEE Transactions on Electron Devices ·(unknown), Koichi Murata, Hidekazu Tsuchida	6
8	Observation of carrier lifetime distribution in 4H-SiC thick epilayers using microscopic time-resolved free carrier absorption system 2020 ·Journal of Applied Physics ·(unknown), (unknown), Takehiko Tawara, Koichi Murata, Hidekazu Tsuchida, (unknown), Kazutoshi Kojima, Tomohisa Kato, Hajime Okumura, Masashi Kato	10
9	Effects of stacking faults on electron transport in 4H-SiC n-type epilayers under unipolar operation evaluated by TCAD simulation 2020 ·Japanese Journal of Applied Physics ·(unknown), Tetsuya Miyazawa, Hidekazu Tsuchida	7
10	Time-resolved photoluminescence spectral analysis of phonon-assisted DAP and e-A recombination in N+B-doped n -type 4H-SiC epilayers 2019 ·Journal of Physics D Applied Physics ·Anli Yang, Koichi Murata, Tetsuya Miyazawa, Takeshi Tawara, Hidekazu Tsuchida	10
11	Fabrication of 4H-SiC PiN diodes on substrate grown by HTCVD method 2019 ·Japanese Journal of Applied Physics ·Yuichiro Tokuda, (unknown), Koichi Murata, Hidekazu Tsuchida	3
12	Glide of C-core partial dislocations along edges of expanding double-Shockley stacking faults in heavily nitrogen-doped 4H-SiC 2019 ·Japanese Journal of Applied Physics ·Yuichiro Tokuda, Isaho Kamata, Norihiro Hoshino, Hidekazu Tsuchida	2
13	Critical Conditions of Misfit Dislocation Formation in 4H-SiC Epilayers 2012 ·Materials science forum ·Xuan Zhang, Tetsuya Miyazawa, Hidekazu Tsuchida	13
14	Forward Voltage Degradation of 4H-SiC pin Diodes and High Voltage 4H-SiC pin Diodes on the (000-1) C-Face with Reduced Forward Degradation 2008 ·IEEJ Transactions on Industry Applications ·(unknown), (unknown), (unknown), Hidekazu Tsuchida, (unknown), (unknown), (unknown)	1
15	Influence of Growth Conditions and Substrate Properties on Formation of Interfacial Dislocations and Dislocation Half-loop Arrays in 4H-SiC(0001) and (000-1) Epitaxy 2008 ·MRS Proceedings ·Hidekazu Tsuchida, Isaho Kamata, Kazutoshi Kojima, Kenji Momose, (unknown), Tomoyuki Takahashi, Yuuki Ishida, (unknown)	14
16	Growth and Characterization of the 4H-SiC Epilayers on Substrates with Different Off-Cut Directions 2004 ·Materials science forum ·Hidekazu Tsuchida, Isaho Kamata, (unknown), Takeshi Tawara, (unknown)	12
17	Conditions for Micropipe Dissociation by 4H-SiC CVD Growth 2003 ·Materials science forum ·Isaho Kamata, Hidekazu Tsuchida, (unknown), (unknown), (unknown)	4
18	The Investigation of 4H-SiC/SiO<sub>2</sub> Interfaces by Optical and Electrical Measurements 2002 ·Materials science forum ·Yuuki Ishida, Tomoyuki Takahashi, Hajime Okumura, (unknown), Hidekazu Tsuchida, Masahito Yoshikawa, (unknown), (unknown), Yasuto Hijikata, Sadafumi Yoshida	3
19	Infrared spectroscopy of hydrides on the 6H-SiC surface 1997 ·Applied Physics Letters ·Hidekazu Tsuchida, I. Kamata, Kunikazu Izumi	35
20	Studies and performance of decreased rail gap switch inductance by enhancing multichanneling via gas mixture 1997 ·IEEE Transactions on Plasma Science ·(unknown), Hidekazu Tsuchida, (unknown), Kiyoshi Yatsui	9

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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