P.L.F. Hemment

1.4k total citations
97 papers, 1.1k citations indexed

About

P.L.F. Hemment is a scholar working on Electrical and Electronic Engineering, Computational Mechanics and Materials Chemistry. According to data from OpenAlex, P.L.F. Hemment has authored 97 papers receiving a total of 1.1k indexed citations (citations by other indexed papers that have themselves been cited), including 88 papers in Electrical and Electronic Engineering, 42 papers in Computational Mechanics and 33 papers in Materials Chemistry. Recurrent topics in P.L.F. Hemment's work include Semiconductor materials and devices (59 papers), Ion-surface interactions and analysis (42 papers) and Silicon and Solar Cell Technologies (36 papers). P.L.F. Hemment is often cited by papers focused on Semiconductor materials and devices (59 papers), Ion-surface interactions and analysis (42 papers) and Silicon and Solar Cell Technologies (36 papers). P.L.F. Hemment collaborates with scholars based in United Kingdom, China and Germany. P.L.F. Hemment's co-authors include John A. Kilner, G. K. Celler, K.J. Reeson, K. W. West, J. M. Gibson, Christopher Marsh, G. R. Booker, R.J. Chater, M.R. Taylor and J. Stoëmenos and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

P.L.F. Hemment

95 papers receiving 1.0k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
P.L.F. Hemment United Kingdom 17 980 410 377 159 92 97 1.1k
K.G. Stephens United Kingdom 15 627 0.6× 304 0.7× 172 0.5× 275 1.7× 39 0.4× 66 743
Jyoji Nakata Japan 15 587 0.6× 330 0.8× 346 0.9× 164 1.0× 67 0.7× 54 788
Nicole Herbots United States 16 467 0.5× 258 0.6× 240 0.6× 138 0.9× 55 0.6× 55 606
C. Ascheron Germany 14 383 0.4× 278 0.7× 207 0.5× 186 1.2× 35 0.4× 46 586
J. F. Barbot France 17 589 0.6× 137 0.3× 211 0.6× 190 1.2× 32 0.3× 61 709
G. Mezey Hungary 14 290 0.3× 319 0.8× 206 0.5× 110 0.7× 50 0.5× 50 533
R. V. Knoell United States 11 492 0.5× 208 0.5× 155 0.4× 228 1.4× 44 0.5× 21 600
M. D. Moyer United States 13 1.0k 1.0× 100 0.2× 557 1.5× 238 1.5× 90 1.0× 29 1.1k
E. Nygren United States 15 449 0.5× 157 0.4× 320 0.8× 186 1.2× 78 0.8× 27 623
J. P. Gailliard France 12 442 0.5× 159 0.4× 168 0.4× 305 1.9× 40 0.4× 25 540

Countries citing papers authored by P.L.F. Hemment

Since Specialization
Citations

This map shows the geographic impact of P.L.F. Hemment's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P.L.F. Hemment with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P.L.F. Hemment more than expected).

Fields of papers citing papers by P.L.F. Hemment

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P.L.F. Hemment. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P.L.F. Hemment. The network helps show where P.L.F. Hemment may publish in the future.

Co-authorship network of co-authors of P.L.F. Hemment

This figure shows the co-authorship network connecting the top 25 collaborators of P.L.F. Hemment. A scholar is included among the top collaborators of P.L.F. Hemment based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with P.L.F. Hemment. P.L.F. Hemment is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Karunaratne, M.S.A., et al.. (2005). Effect of Fluorine Implantation Dose on Boron Transient Enhanced Diffusion and Boron Thermal Diffusion in Si<tex>$_1-x$</tex>Ge<tex>$_x$</tex>. IEEE Transactions on Electron Devices. 52(4). 518–526. 5 indexed citations
2.
Cristoloveanu, S. & P.L.F. Hemment. (1999). Proceedings of the Ninth International Symposium on Silicon-on-Insulator Technology and Devices. Electrochemical Society eBooks. 4 indexed citations
3.
Coleman, P. G., et al.. (1998). Defects in -implanted Si studied by slow positron implantation spectroscopy. Semiconductor Science and Technology. 13(4). 394–398. 6 indexed citations
4.
Barklie, R.C., A. Nylandsted Larsen, F. Priolo, et al.. (1996). 2 MeV Si ion implantation damage in relaxed Si1−Ge. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 120(1-4). 165–168. 2 indexed citations
5.
Hemment, P.L.F., F. Cristiano, A. Nejim, et al.. (1995). Ge+ ion implantation — a competing technology?. Journal of Crystal Growth. 157(1-4). 147–160. 13 indexed citations
6.
Chenglu, Lin, et al.. (1994). Formation of aluminium nitride and segregation of Cu impurity atoms in aluminium implanted by high dose nitrogen ions. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 84(2). 208–213. 1 indexed citations
7.
Nejim, A., et al.. (1993). New etchant for crystallographic defect studies in thin SOI materials (<1000 Å). Electronics Letters. 29(9). 788–789. 5 indexed citations
8.
Hemment, P.L.F., B.J. Sealy, K.G. Stephens, et al.. (1993). A 2 MV heavy ion Van de Graaff implanter for research and development. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 74(1-2). 27–31. 2 indexed citations
9.
Lin, Chenglu, et al.. (1992). Characterisation of Si/Ge0.5Si0.5 Strained-Layer Superlattices on SIMOX Substrates. physica status solidi (a). 132(2). 419–424. 1 indexed citations
10.
Castle, J. E., John F. Watts, P.L.F. Hemment, et al.. (1991). An investigation of Si0.5Ge0.5 alloy oxidation by high dose oxygen implantation. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 55(1-4). 697–700. 10 indexed citations
11.
Lourenço, M. A., K.P. Homewood, & P.L.F. Hemment. (1989). Carrier Lifetime Distributions and Recombination Kinetics in Silicon on Insulator (Simox) Substrate. MRS Proceedings. 157. 2 indexed citations
12.
Barklie, R.C., et al.. (1989). The effect of implantation temperature on defect production in SIMOX structures. Semiconductor Science and Technology. 4(8). 626–632. 2 indexed citations
13.
Yu, Yuehui, et al.. (1989). Infrared absorption and reflection spectroscopic studies of SOI structures formed by oxygen or nitrogen implantation. Materials Letters. 8(3-4). 95–100. 6 indexed citations
14.
Jäger, H.U., John A. Kilner, R.J. Chater, et al.. (1988). Modelling of 18O tracer studies of the oxygen redistribution during formation of SiO2 layers by high dose implantation. Thin Solid Films. 161. 333–342. 13 indexed citations
15.
Reeson, K.J., P.L.F. Hemment, J. Stoëmenos, J. Davis, & G. K. Celler. (1987). Formation of buried layers of β-SiC using ion beam synthesis and incoherent lamp annealing. Applied Physics Letters. 51(26). 2242–2244. 32 indexed citations
16.
Thornton, John A., P.L.F. Hemment, & I. H. Wilson. (1987). Amorphisation of silicon by bombardment with group IV ions. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 19-20. 307–311. 13 indexed citations
17.
Celler, G. K., P.L.F. Hemment, K. W. West, & J. M. Gibson. (1986). High quality Si-on-SiO2 films by large dose oxygen implantation and lamp annealing. Applied Physics Letters. 48(8). 532–534. 124 indexed citations
18.
Kilner, John A., R.J. Chater, P.L.F. Hemment, et al.. (1986). SIMS analysis of buried silicon nitride layers formed by high dose implantation of 14N and 15N. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 15(1-6). 214–217. 22 indexed citations
19.
Hemment, P.L.F.. (1979). Dosimetry techniques. Radiation Effects. 44(1-4). 31–45. 6 indexed citations
20.
Hemment, P.L.F., et al.. (1975). An effect of poor vacuum conditions on the analysis of thin films by Rutherford backscattering. Thin Solid Films. 28(1). L1–L4. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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