P.L.F. Hemment

1.4k citations

97 papers · 1.1k indexed · h-index 17

Electrical and Electronic Engineering top 5%
Computational Mechanics top 2%
Materials Chemistry top 10%
Atomic and Molecular Physics, and Optics
Biomedical Engineering

Co-authors: John A. Kilner G. K. Celler K.J. Reeson K. W. West J. M. Gibson Christopher Marsh G. R. Booker R.J. Chater
Topics: Semiconductor materials and devices (59 papers)Ion-surface interactions and analysis (42 papers)Silicon and Solar Cell Technologies (36 papers)
Cited by: Computational Mechanics Electrical and Electronic Engineering Materials Chemistry
Journals: Applied Physics Letters Journal of Applied Physics Journal of The Electrochemical Society
Partner nations: United Kingdom China Germany

In The Last Decade

P.L.F. Hemment

95 papers receiving 1.0k citations

Peers

Countries citing papers authored by P.L.F. Hemment

Since Specialization

Citations

This map shows the geographic impact of P.L.F. Hemment's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P.L.F. Hemment with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P.L.F. Hemment more than expected).

Fields of papers citing papers by P.L.F. Hemment

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P.L.F. Hemment. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P.L.F. Hemment. The network helps show where P.L.F. Hemment may publish in the future.

Co-authorship network of co-authors of P.L.F. Hemment

This figure shows the co-authorship network connecting the top 25 collaborators of P.L.F. Hemment. A scholar is included among the top collaborators of P.L.F. Hemment based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with P.L.F. Hemment. P.L.F. Hemment is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Effect of Fluorine Implantation Dose on Boron Transient Enhanced Diffusion and Boron Thermal Diffusion in Si<tex>$_1-x$</tex>Ge<tex>$_x$</tex> 2005 ·IEEE Transactions on Electron Devices ·(unknown),M.S.A. Karunaratne,J. M. Bonar,(unknown),(unknown),P.L.F. Hemment,A. F. W. Willoughby,P. Ashburn	5
2	Proceedings of the Ninth International Symposium on Silicon-on-Insulator Technology and Devices 1999 ·Electrochemical Society eBooks ·S. Cristoloveanu,P.L.F. Hemment	4
3	Defects in -implanted Si studied by slow positron implantation spectroscopy 1998 ·Semiconductor Science and Technology ·(unknown),P. G. Coleman,A. Nejim,F. Cristiano,P.L.F. Hemment	6
4	2 MeV Si ion implantation damage in relaxed Si1−Ge 1996 ·Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·(unknown),R.C. Barklie,A. Nylandsted Larsen,F. Priolo,G. Franzò,G. Lulli,M. Bianconi,J.K.N. Lindner,F. Cristiano,P.L.F. Hemment	2
5	Ge+ ion implantation — a competing technology? 1995 ·Journal of Crystal Growth ·P.L.F. Hemment,F. Cristiano,A. Nejim,S. Lombardo,(unknown),F. Priolo,R.C. Barklie	13
6	Formation of aluminium nitride and segregation of Cu impurity atoms in aluminium implanted by high dose nitrogen ions 1994 ·Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·Lin Chenglu,P.L.F. Hemment,Jinhua Li,(unknown)	1
7	New etchant for crystallographic defect studies in thin SOI materials (<1000 Å) 1993 ·Electronics Letters ·(unknown),A. Nejim,P.L.F. Hemment	5
8	A 2 MV heavy ion Van de Graaff implanter for research and development 1993 ·Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·P.L.F. Hemment,B.J. Sealy,K.G. Stephens,(unknown),C. Jeynes,(unknown),R. J. Wilson,(unknown),(unknown),D.J.W. Mous,(unknown)	2
9	Characterisation of Si/Ge0.5Si0.5 Strained-Layer Superlattices on SIMOX Substrates 1992 ·physica status solidi (a) ·Chenglu Lin,P.L.F. Hemment,(unknown),Jinhua Li,(unknown),(unknown),(unknown),Shichang Zou	1
10	An investigation of Si0.5Ge0.5 alloy oxidation by high dose oxygen implantation 1991 ·Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·J. E. Castle,(unknown),John F. Watts,(unknown),P.L.F. Hemment,(unknown),(unknown),S. M. Newstead,Adrian R. Powell,T. E. Whall,E. H. C. Parker	10
11	Carrier Lifetime Distributions and Recombination Kinetics in Silicon on Insulator (Simox) Substrate 1989 ·MRS Proceedings ·M. A. Lourenço,K.P. Homewood,P.L.F. Hemment	2
12	The effect of implantation temperature on defect production in SIMOX structures 1989 ·Semiconductor Science and Technology ·(unknown),R.C. Barklie,K.J. Reeson,P.L.F. Hemment	2
13	Infrared absorption and reflection spectroscopic studies of SOI structures formed by oxygen or nitrogen implantation 1989 ·Materials Letters ·Yuehui Yu,(unknown),Lin Chenglu,(unknown),P.L.F. Hemment	6
14	Modelling of 18O tracer studies of the oxygen redistribution during formation of SiO2 layers by high dose implantation 1988 ·Thin Solid Films ·H.U. Jäger,John A. Kilner,R.J. Chater,P.L.F. Hemment,R. F. Peart,K.J. Reeson	13
15	Formation of buried layers of β-SiC using ion beam synthesis and incoherent lamp annealing 1987 ·Applied Physics Letters ·K.J. Reeson,P.L.F. Hemment,J. Stoëmenos,J. Davis,G. K. Celler	32
16	Amorphisation of silicon by bombardment with group IV ions 1987 ·Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·John A. Thornton,P.L.F. Hemment,I. H. Wilson	13
17	High quality Si-on-SiO2 films by large dose oxygen implantation and lamp annealing 1986 ·Applied Physics Letters ·G. K. Celler,P.L.F. Hemment,K. W. West,J. M. Gibson	124
18	SIMS analysis of buried silicon nitride layers formed by high dose implantation of 14N and 15N 1986 ·Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·John A. Kilner,R.J. Chater,P.L.F. Hemment,R. F. Peart,K.J. Reeson,(unknown),J.R. Davis	22
19	Dosimetry techniques 1979 ·Radiation Effects ·P.L.F. Hemment	6
20	An effect of poor vacuum conditions on the analysis of thin films by Rutherford backscattering 1975 ·Thin Solid Films ·P.L.F. Hemment,(unknown),K.G. Stephens	3

About P.L.F. Hemment

P.L.F. Hemment is a scholar working on Computational Mechanics, Electrical and Electronic Engineering and Materials Chemistry, having authored 97 papers that have together received 1.1k indexed citations. Recurring topics across this work include Semiconductor materials and devices (59 papers), Ion-surface interactions and analysis (42 papers) and Silicon and Solar Cell Technologies (36 papers). The work is most often cited by research in Computational Mechanics (410 citations), Electrical and Electronic Engineering (980 citations) and Materials Chemistry (377 citations). P.L.F. Hemment has collaborated with scholars based in United Kingdom, China and Germany. Frequent co-authors include John A. Kilner, G. K. Celler, K.J. Reeson, K. W. West, J. M. Gibson, Christopher Marsh, G. R. Booker, R.J. Chater, M.R. Taylor and J. Stoëmenos. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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