J. M. Bonar

1.6k total citations
67 papers, 1.3k citations indexed

About

J. M. Bonar is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, J. M. Bonar has authored 67 papers receiving a total of 1.3k indexed citations (citations by other indexed papers that have themselves been cited), including 57 papers in Electrical and Electronic Engineering, 45 papers in Atomic and Molecular Physics, and Optics and 13 papers in Materials Chemistry. Recurrent topics in J. M. Bonar's work include Semiconductor materials and interfaces (34 papers), Silicon and Solar Cell Technologies (33 papers) and Semiconductor materials and devices (22 papers). J. M. Bonar is often cited by papers focused on Semiconductor materials and interfaces (34 papers), Silicon and Solar Cell Technologies (33 papers) and Semiconductor materials and devices (22 papers). J. M. Bonar collaborates with scholars based in United Kingdom, United States and Italy. J. M. Bonar's co-authors include T. P. Pearsall, R. Hull, J. Bevk, A. Ourmazd, A. F. W. Willoughby, J. P. Mannáerts, L. C. Feldman, Suresh Uppal, Mark Dowsett and N. E. B. Cowern and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

J. M. Bonar

63 papers receiving 1.2k citations

Peers

J. M. Bonar

EEE

AMPO

U. G�sele United States

G. F. A. van de Walle Netherlands

Y. H. Xie United States

L. C. Kimerling United States

B. Dietrich Germany

M.A. Foad United States

J. P. Gowers United Kingdom

K. Graff Germany

Yoshiyuki Suda Japan

F. Schrey United States

U. G�sele United States

J. M. Bonar

791 ×0.8

EEE

404 ×0.4

AMPO

371 ×0.8

137 ×1.2

59 ×0.5

Citations per year, relative to J. M. Bonar J. M. Bonar (= 1×) peers U. G�sele

Countries citing papers authored by J. M. Bonar

Since Specialization

Citations

This map shows the geographic impact of J. M. Bonar's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. M. Bonar with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. M. Bonar more than expected).

Fields of papers citing papers by J. M. Bonar

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. M. Bonar. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. M. Bonar. The network helps show where J. M. Bonar may publish in the future.

Co-authorship network of co-authors of J. M. Bonar

This figure shows the co-authorship network connecting the top 25 collaborators of J. M. Bonar. A scholar is included among the top collaborators of J. M. Bonar based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. M. Bonar. J. M. Bonar is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Pichler, P., C.J. Ortiz, B. Colombeau, et al.. (2006). Diffusion and activation of dopants in silicon and advanced silicon-based materials. HAL (Le Centre pour la Communication Scientifique Directe). 3 indexed citations

Karunaratne, M.S.A., A. F. W. Willoughby, J. M. Bonar, Jianping Zhang, & P. Ashburn. (2005). Effect of point defect injection on diffusion of boron in silicon and silicon–germanium in the presence of carbon. Journal of Applied Physics. 97(11). 7 indexed citations

Karunaratne, M.S.A., et al.. (2005). Effect of Fluorine Implantation Dose on Boron Transient Enhanced Diffusion and Boron Thermal Diffusion in Si<tex>$_1-x$</tex>Ge<tex>$_x$</tex>. IEEE Transactions on Electron Devices. 52(4). 518–526. 5 indexed citations

Bonar, J. M., et al.. (2005). Sphere defects prevention on shallow trench isolation etch. 476–478.

Uppal, Suresh, J. M. Bonar, Jing Zhang, & A. F. W. Willoughby. (2004). Arsenic diffusion in Si and strained SixGe1−x alloys at 1000 °C. Materials Science and Engineering B. 114-115. 349–351. 6 indexed citations

Willoughby, A. F. W., J. M. Bonar, N. E. B. Cowern, R. J. H. Morris, & Monica Bollani. (2003). Diffusion of Boron in Germanium and Si_1-xGe_x (x>50%) alloys Suresh Uppal. MRS Proceedings. 765. 2 indexed citations

Uppal, Suresh, A. F. W. Willoughby, J. M. Bonar, et al.. (2001). Diffusion of ion-implanted boron in germanium. Journal of Applied Physics. 90(8). 4293–4295. 91 indexed citations

Ashburn, P., et al.. (2001). SiGe Heterojunction Bipolare Transistors on Insulator. ePrints Soton (University of Southampton). 1 indexed citations

Garner, David M., G J Ensell, J. M. Bonar, et al.. (1999). The fabrication of a partial SOI substrate. ePrints Soton (University of Southampton). 9 indexed citations

10.

Bonar, J. M., et al.. (1999). Leakage current mechanisms associated with selective epitaxy in SiGe heterojunction bipolar transistors. ePrints Soton (University of Southampton). 4 indexed citations

11.

Bonar, J. M., et al.. (1999). Selective and non-selective growth of self-aligned SiGe HBT structures by LPCVD epitaxy. Journal of Materials Science Materials in Electronics. 10(5-6). 345–349. 6 indexed citations

12.

Willoughby, A. F. W., et al.. (1999). Point defect redistribution in Si1−xGe x alloys. Journal of Materials Science Materials in Electronics. 10(5-6). 339–343. 1 indexed citations

13.

Bonar, J. M., et al.. (1999). The Effect of Grown-In Point Defects on Sb Diffusion in MBE-Grown Si and Sige. MRS Proceedings. 568. 1 indexed citations

14.

Willoughby, A. F. W., et al.. (1997). Antimony Diffusion in Strained and Relaxed Si<sub>1-x</sub>Ge<sub>x</sub>. Defect and diffusion forum/Diffusion and defect data, solid state data. Part A, Defect and diffusion forum. 143-147. 1131–1134. 7 indexed citations

15.

Albrecht, M., H. P. Strunk, R. Hull, & J. M. Bonar. (1993). Dislocation glide in {110} planes in semiconductors with diamond or zinc-blende structure. Applied Physics Letters. 62(18). 2206–2208. 34 indexed citations

16.

Bonar, J. M., et al.. (1992). Thick selective epitaxial growth of silicon at 960°C using silane only. Microelectronic Engineering. 18(3). 237–246. 7 indexed citations

17.

Bonar, J. M., R. Hull, J. Walker, & R. J. Malik. (1992). Observations of new misfit dislocation configurations and slip systems at ultrahigh stresses in the (Al)GaAs/InxGa1−xAs/GaAs(100) system. Applied Physics Letters. 60(11). 1327–1329. 30 indexed citations

18.

Pearsall, T. P., J. M. Vandenberg, R. Hull, & J. M. Bonar. (1989). Structure and optical properties of strained Ge-Si superlattices grown on (001) Ge. Physical Review Letters. 63(19). 2104–2107. 77 indexed citations

19.

Pearsall, T. P., J. Bevk, J. C. Bean, et al.. (1989). Electronic structure of Ge/Si monolayer strained-layer superlattices. Physical review. B, Condensed matter. 39(6). 3741–3757. 85 indexed citations

20.

Pearsall, T. P., J. Bevk, L. C. Feldman, et al.. (1987). Structurally induced optical transitions in Ge-Si superlattices. Physical Review Letters. 58(7). 729–732. 257 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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