A. Nejim

1.4k citations

74 papers · 887 indexed · h-index 14

Impact in

Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices
- Silicon and Solar Cell Technologies
- Thin-Film Transistor Technologies
- Organic Electronics and Photovoltaics
- Integrated Circuits and Semiconductor Failure Analysis
Polymers and Plastics top 10%

Papers in ⓘ

Electrical and Electronic Engineering 72
- Semiconductor materials and devices 37
- Silicon and Solar Cell Technologies 28
- Advancements in Semiconductor Devices and Circuit Design 16
- Integrated Circuits and Semiconductor Failure Analysis 16
- Thin-Film Transistor Technologies 13
Computational Mechanics 18
- Ion-surface interactions and analysis 18

Co-authors: P.L.F. Hemment (24 shared papers)F. Cristiano (13 shared papers)J. Stoëmenos (5 shared papers)A. Claverie (6 shared papers)Paul Cain (2 shared papers)P.L.F. Hemment (15 shared papers)Simon Ogier (1 shared paper)Wei Tang (1 shared paper)
Journals: Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms (28 papers)Applied Physics Letters (4 papers)Semiconductor Science and Technology (4 papers)Journal of Applied Physics (2 papers)Journal of Crystal Growth (2 papers)
Partner nations: United Kingdom France Greece

In The Last Decade

A. Nejim

66 papers receiving 859 citations

Peers

Countries citing papers authored by A. Nejim

Since Specialization

Citations

This map shows the geographic impact of A. Nejim's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Nejim with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Nejim more than expected).

Fields of papers citing papers by A. Nejim

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Nejim. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Nejim. The network helps show where A. Nejim may publish in the future.

Co-authors

The 25 scholars most cited alongside A. Nejim, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with A. Nejim Line = papers co-authored together A. Nejim links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 74 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Current Status and Opportunities of Organic Thin-Film Transistor Technologies IEEE Transactions on Electron Devices ·Xiaojun Guo, Yong Xu, Simon Ogier, Tse Nga Ng, Mario Caironi, Andrea Perinot, Ling Li, Jiaqing Zhao, Wei Tang, Radu A. Sporea, A. Nejim, Jordi Carrabina, Paul Cain, Feng Yan	2017	218
2	Visible photoluminescence at room temperature from microcrystalline silicon precipitates in SiO2 formed by ion implantation Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·T. Komoda, James Kelly, F. Cristiano, A. Nejim, P.L.F. Hemment, K.P. Homewood, R. Gwilliam, J.E. Mynard, B.J. Sealy	1995	65
3	SiC buried layer formation by ion beam synthesis at 950 °C Applied Physics Letters ·A. Nejim, P.L.F. Hemment, J. Stoëmenos	1995	47
4	Transient enhanced diffusion in preamorphized silicon: the role of the surface Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·N. E. B. Cowern, Daniel Alquier, M. Omri, A. Claverie, A. Nejim	1999	40
5	An investigation of as-implanted material formed by high dose 40 keV oxygen implantation into silicon at 550 °C Journal of Applied Physics ·Y. Li, John A. Kilner, Richard J. Chater, A. Nejim, P.L.F. Hemment, T.J. Tate	1993	34
6	In Situ Studies of the Interaction of Dislocations with Point Defects during Annealing of Ion Implanted Si/SiGe/Si (001) Heterostructures Microscopy and Microanalysis ·Eric A. Stach, R. Hull, J. C. Bean, K. S. Jones, A. Nejim	1998	29
7	Accurate RBS measurement of ion implant doses in silicon Surface and Interface Analysis ·G. Boudreault, C. Jeynes, E. Wendler, A. Nejim, R.P. Webb, U. Wätjen	2002	24
8	Is there an effect of the proximity of a “free-surface” on the formation of End-Of-Range defects? Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·M. Omri, Caroline Bonafos, A. Claverie, A. Nejim, F. Cristiano, Daniel Alquier, A. Martínez, N. E. B. Cowern	1996	24
9	Interstitial trapping efficiency of C+ implanted into preamorphised silicon — control of EOR defects Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·F. Cristiano, Caroline Bonafos, A. Nejim, S. Lombardo, M. Omri, Daniel Alquier, A. Martínez, S. U. Campisano, P.L.F. Hemment, A. Claverie	1997	21
10	Parametrization of the Gaussian Disorder Model to Account for the High Carrier Mobility in Disordered Organic Transistors Physical Review Applied ·Yongjeong Lee, Sungyeop Jung, Andrew Plews, A. Nejim, Olivier Simonetti, L. Giraudet, S. D. Baranovskiǐ, Florian Gebhard, Klaus Meerholz, Sungjune Jung, Gilles Horowitz, Yvan Bonnassieux	2021	20
11	Modelling of organic field-effect transistors for technology and circuit design Slobodan Mijalković, David W. Green, A. Nejim, Gregory L. Whiting, Aleksandra Rankov, Edward Smith, J.J.M. Halls, C. Murphy	2008	15
12	The Effects of Dose and Target Temperature on Low Energy SIMOX Layers Journal of The Electrochemical Society ·Y. Li, John A. Kilner, R.J. Chater, P.L.F. Hemment, A. Nejim, A.K. Robinson, K.J. Reeson, Christopher Marsh, G. R. Booker	1993	15
13	Parameter Extraction and Evaluation of UOTFT Model for Organic Thin-Film Transistor Circuit Design Journal of Display Technology ·Burağ Yağlıoğlu, Tiziano Agostinelli, Paul Cain, Slobodan Mijalković, A. Nejim	2013	14
14	Ge+ ion implantation — a competing technology? Journal of Crystal Growth ·P.L.F. Hemment, F. Cristiano, A. Nejim, S. Lombardo, K.K. Larssen, F. Priolo, R.C. Barklie	1995	13
15	A new chemical etch for defects studies in very thin film (< 1000 Å) SIMOX material Materials Chemistry and Physics ·L.F. Giles, A. Nejim, P.L.F. Hemment	1993	13
16	New Compact Modeling Solutions for Organic and Amorphous Oxide TFTs IEEE Journal of the Electron Devices Society ·Benjamı́n Iñı́guez, Arokia Nathan, Alexander Kloes, Yvan Bonnassieux, Krunoslav Romanjek, Micaël Charbonneau, Jan Laurens van der Steen, Gerwin H. Gelinck, Thomas Gneiting, Firas Mohamed, G. Ghibaudo, A. Cerdeira, M. Estrada, Slobodan Mijalković, A. Nejim	2021	13
17	Oxygen isotopic exchange between an 18O+ implanted Si layer and a natural SiO2 capping layer during high-temperature annealing Applied Physics Letters ·Yupu Li, John A. Kilner, R.J. Chater, A. Nejim, P.L.F. Hemment, Christopher Marsh, G. R. Booker	1993	12
18	Formation of extended defects and strain relaxation in ion beam synthesised SiGe alloys Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·F. Cristiano, A. Nejim, Yu. Suprun-Belevich, A. Claverie, P.L.F. Hemment	1999	12
19	Advanced Design Methods From Materials and Devices to Circuits for Brain-Inspired Oscillatory Neural Networks for Edge Computing IEEE Journal on Emerging and Selected Topics in Circuits and Systems ·Stefania Carapezzi, Gabriele Boschetto, Corentin Delacour, Elisabetta Corti, Andrew Plews, A. Nejim, Siegfried Karg, Aida Todri‐Sanial	2021	12
20	Role of ambient temperature in modulation of behavior of vanadium dioxide volatile memristors and oscillators for neuromorphic applications Scientific Reports ·Stefania Carapezzi, Corentin Delacour, Andrew Plews, A. Nejim, Siegfried Karg, Aida Todri‐Sanial	2022	11

About A. Nejim

A. Nejim is a scholar working on Electrical and Electronic Engineering, Computational Mechanics, Ceramics and Composites, Atomic and Molecular Physics, and Optics and Polymers and Plastics, having authored 74 papers that have together received 887 indexed citations. Recurring topics across this work include Semiconductor materials and devices (37 papers), Silicon and Solar Cell Technologies (28 papers), Ion-surface interactions and analysis (18 papers), Advancements in Semiconductor Devices and Circuit Design (16 papers), Integrated Circuits and Semiconductor Failure Analysis (16 papers), Thin-Film Transistor Technologies (13 papers), Semiconductor materials and interfaces (13 papers) and Silicon Nanostructures and Photoluminescence (10 papers). The work is most often cited by research in Electrical and Electronic Engineering (745 citations), Polymers and Plastics (112 citations), Computational Mechanics (151 citations), Critical Care and Intensive Care Medicine (28 citations) and Materials Chemistry (245 citations). A. Nejim has collaborated with scholars based in United Kingdom, France and Greece. Frequent co-authors include P.L.F. Hemment, F. Cristiano, J. Stoëmenos, A. Claverie, Paul Cain, P.L.F. Hemment, Simon Ogier, Wei Tang, Tse Nga Ng and Xiaojun Guo. Their work appears in journals such as Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms, Applied Physics Letters, Semiconductor Science and Technology, Journal of Applied Physics and Journal of Crystal Growth.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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