B.J. Sealy

2.4k total citations
203 papers, 1.9k citations indexed

About

B.J. Sealy is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Computational Mechanics. According to data from OpenAlex, B.J. Sealy has authored 203 papers receiving a total of 1.9k indexed citations (citations by other indexed papers that have themselves been cited), including 181 papers in Electrical and Electronic Engineering, 102 papers in Atomic and Molecular Physics, and Optics and 72 papers in Computational Mechanics. Recurrent topics in B.J. Sealy's work include Silicon and Solar Cell Technologies (91 papers), Semiconductor materials and interfaces (77 papers) and Semiconductor materials and devices (75 papers). B.J. Sealy is often cited by papers focused on Silicon and Solar Cell Technologies (91 papers), Semiconductor materials and interfaces (77 papers) and Semiconductor materials and devices (75 papers). B.J. Sealy collaborates with scholars based in United Kingdom, Germany and Poland. B.J. Sealy's co-authors include R. Gwilliam, A. Kozanecki, K.G. Stephens, K.J. Reeson, R. Bensalem, W. P. Gillin, K.P. Homewood, C. Jeynes, J. M. Shannon and P.L.F. Hemment and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

B.J. Sealy

194 papers receiving 1.8k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
B.J. Sealy United Kingdom 22 1.5k 940 748 368 235 203 1.9k
M. Cerullo United States 12 1.6k 1.1× 1.6k 1.7× 825 1.1× 200 0.5× 408 1.7× 26 2.4k
N. Cherkashin France 27 1.7k 1.1× 851 0.9× 938 1.3× 337 0.9× 442 1.9× 146 2.2k
D. J. Gravesteijn Netherlands 25 1.5k 1.0× 744 0.8× 699 0.9× 223 0.6× 205 0.9× 88 1.8k
A. J. Howard United States 16 936 0.6× 526 0.6× 565 0.8× 566 1.5× 174 0.7× 68 1.4k
H. Tanoue Japan 22 1.1k 0.7× 640 0.7× 551 0.7× 241 0.7× 227 1.0× 128 1.6k
M. Servidori Italy 24 1.3k 0.8× 654 0.7× 495 0.7× 399 1.1× 201 0.9× 112 1.6k
H. Cerva Germany 23 994 0.7× 590 0.6× 613 0.8× 125 0.3× 252 1.1× 91 1.5k
D. De Salvador Italy 25 1.4k 0.9× 952 1.0× 781 1.0× 267 0.7× 303 1.3× 166 2.1k
Michio Tajima Japan 24 1.9k 1.2× 785 0.8× 914 1.2× 175 0.5× 226 1.0× 171 2.2k
A. J. Pidduck United Kingdom 19 748 0.5× 836 0.9× 334 0.4× 158 0.4× 193 0.8× 46 1.3k

Countries citing papers authored by B.J. Sealy

Since Specialization
Citations

This map shows the geographic impact of B.J. Sealy's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by B.J. Sealy with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites B.J. Sealy more than expected).

Fields of papers citing papers by B.J. Sealy

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by B.J. Sealy. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by B.J. Sealy. The network helps show where B.J. Sealy may publish in the future.

Co-authorship network of co-authors of B.J. Sealy

This figure shows the co-authorship network connecting the top 25 collaborators of B.J. Sealy. A scholar is included among the top collaborators of B.J. Sealy based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with B.J. Sealy. B.J. Sealy is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Bennett, Nick S., R. Gwilliam, C. Jeynes, et al.. (2014). Ion Beam Analysis for Hall Scattering Factor Measurements in Antimony Implanted Bulk and Strained Silicon. Journal of Engineering Research. 2(1). 120–133. 1 indexed citations
2.
Bennett, Nick S., N. E. B. Cowern, S. Paul, et al.. (2008). Vacancy engineering for highly activated ‘diffusionless’ boron doping in bulk silicon. View. 59. 290–293.
3.
Tsang, W.M., Vlad Stolojan, B.J. Sealy, S.P. Wong, & S. Ravi P. Silva. (2007). Electron field emission properties of Co quantum dots in SiO2 matrix synthesised by ion implantation. Ultramicroscopy. 107(9). 819–824. 13 indexed citations
4.
Jeynes, C., et al.. (2006). Characterising ion-cut in GaAs by Rutherford backscattering spectroscopy. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 249(1-2). 429–431. 3 indexed citations
5.
Bennett, Nick S., N. E. B. Cowern, Andrew J. Smith, et al.. (2006). Highly conductive Sb-doped layers in strained Si. Applied Physics Letters. 89(18). 16 indexed citations
6.
Gwilliam, R., et al.. (2005). Electrical profiles of 20 nm junctions in Sb implanted silicon. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 242(1-2). 693–695. 2 indexed citations
7.
Sealy, B.J., et al.. (2005). Langmuir probe analysis of a BF3 discharge in a high current ion source. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 237(1-2). 245–249. 1 indexed citations
8.
Pi, Xiaodong, et al.. (2003). Oxygen-related vacancy-type defects in ion-implanted silicon. Journal of Physics Condensed Matter. 15(39). S2825–S2833. 7 indexed citations
9.
Sealy, B.J.. (2003). Proton isolation revisited. III-Vs Review. 16(9). 36–38.
10.
Kozanecki, A., et al.. (2001). Sensitization of the 1.54 μm luminescence of Er3+ in SiO2 films by Yb and Si-nanocrystals. Materials Science and Engineering B. 81(1-3). 23–28. 8 indexed citations
11.
Kozanecki, A., B.J. Sealy, & K.P. Homewood. (2000). Excitation of Er3+ emission in Er, Yb codoped thin silica films. Journal of Alloys and Compounds. 300-301. 61–64. 13 indexed citations
12.
Silva, S. Ravi P., R. D. Forrest, J. M. Shannon, & B.J. Sealy. (1999). Electron field emission from amorphous silicon. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 17(2). 596–600. 11 indexed citations
13.
Nejim, A., N.P. Barradas, C. Jeynes, et al.. (1998). Residual post anneal damage of Ge and C co-implantation of Si determined by quantitative RBS-channelling. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 139(1-4). 244–248.
14.
Stephens, K.G., et al.. (1992). A double hot cathode lateral extraction Penning ion source. Review of Scientific Instruments. 63(4). 2475–2477. 2 indexed citations
15.
Reeson, K.J., et al.. (1991). Dose dependence of crystallinity and resistivity in ion beam synthesised CoSi2 layers. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 55(1-4). 836–841. 11 indexed citations
16.
Stephens, K.G., K.J. Reeson, B.J. Sealy, R. Gwilliam, & P.L.F. Hemment. (1990). The formation of compound layers in silicon by ion beam synthesis. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 50(1-4). 368–378. 21 indexed citations
17.
Tang, Y. S. & B.J. Sealy. (1990). Characteristics of erbium implants in silicon-on-insulator. Journal of Applied Physics. 68(5). 2530–2532. 5 indexed citations
18.
Sealy, B.J., et al.. (1989). Thermal stability of Be-, Mg-, and Zn-implanted layers in GaAs for high-temperature device-processing technology. Journal of Applied Physics. 66(6). 2759–2761. 2 indexed citations
19.
Sealy, B.J., et al.. (1983). Transient annealing of ion implanted indium phosphide. Journal of Crystal Growth. 64(1). 174–180. 2 indexed citations
20.
Bensalem, R., et al.. (1983). AlN capped annealing of Se and Sn implanted semi-insulating GaAs. Electronics Letters. 19(3). 112–113. 22 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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