G. Lulli

1.1k total citations
72 papers, 962 citations indexed

About

G. Lulli is a scholar working on Electrical and Electronic Engineering, Computational Mechanics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, G. Lulli has authored 72 papers receiving a total of 962 indexed citations (citations by other indexed papers that have themselves been cited), including 62 papers in Electrical and Electronic Engineering, 45 papers in Computational Mechanics and 17 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in G. Lulli's work include Silicon and Solar Cell Technologies (46 papers), Ion-surface interactions and analysis (45 papers) and Integrated Circuits and Semiconductor Failure Analysis (26 papers). G. Lulli is often cited by papers focused on Silicon and Solar Cell Technologies (46 papers), Ion-surface interactions and analysis (45 papers) and Integrated Circuits and Semiconductor Failure Analysis (26 papers). G. Lulli collaborates with scholars based in Italy, United Kingdom and United States. G. Lulli's co-authors include M. Bianconi, E. Albertazzi, P. G. Merli, Roberta Nipoti, M. Vittori Antisari, A. Carnera, A. Parisini, Luciano Colombo, G. Mattei and M. Cervera and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

G. Lulli

69 papers receiving 903 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
G. Lulli Italy 16 643 502 284 218 141 72 962
F. Brisard France 14 562 0.9× 762 1.5× 554 2.0× 90 0.4× 119 0.8× 24 1.0k
A. Desalvo Italy 17 510 0.8× 146 0.3× 429 1.5× 141 0.6× 100 0.7× 72 796
G. Holmén Sweden 17 621 1.0× 697 1.4× 199 0.7× 97 0.4× 115 0.8× 46 872
C. R. Wie United States 20 876 1.4× 255 0.5× 368 1.3× 671 3.1× 68 0.5× 83 1.2k
Edward B. Hale United States 14 419 0.7× 244 0.5× 247 0.9× 399 1.8× 65 0.5× 31 836
D. Niemann United States 14 178 0.3× 412 0.8× 207 0.7× 234 1.1× 203 1.4× 43 676
R.A. Rymzhanov Russia 15 249 0.4× 405 0.8× 272 1.0× 51 0.2× 58 0.4× 53 574
U.V. Desnica Croatia 15 640 1.0× 113 0.2× 496 1.7× 357 1.6× 48 0.3× 89 900
F. R. Szofran United States 18 464 0.7× 123 0.2× 558 2.0× 223 1.0× 30 0.2× 72 922
Y. H. Phang United States 8 209 0.3× 278 0.6× 219 0.8× 466 2.1× 65 0.5× 10 787

Countries citing papers authored by G. Lulli

Since Specialization
Citations

This map shows the geographic impact of G. Lulli's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G. Lulli with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G. Lulli more than expected).

Fields of papers citing papers by G. Lulli

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G. Lulli. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G. Lulli. The network helps show where G. Lulli may publish in the future.

Co-authorship network of co-authors of G. Lulli

This figure shows the co-authorship network connecting the top 25 collaborators of G. Lulli. A scholar is included among the top collaborators of G. Lulli based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with G. Lulli. G. Lulli is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Lulli, G. & Roberta Nipoti. (2011). 2D Simulation of under-Mask Penetration in 4H-SiC Implanted with Al<sup>+</sup> Ions. Materials science forum. 679-680. 421–424. 4 indexed citations
2.
Lulli, G.. (2010). Two-Dimensional Simulation of Undermask Penetration in 4H-SiC Implanted With $\hbox{Al}^{+}$ Ions. IEEE Transactions on Electron Devices. 58(1). 190–194. 14 indexed citations
3.
Barradas, N.P., Kai Arstila, G. Battistig, et al.. (2007). Summary of “IAEA intercomparison of IBA software”. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 266(8). 1338–1342. 62 indexed citations
4.
Lulli, G., et al.. (2006). Defect-induced homogeneous amorphization of silicon: the role of defect structure and population. Journal of Physics Condensed Matter. 18(6). 2077–2088. 5 indexed citations
5.
Lulli, G., E. Albertazzi, M. Bianconi, et al.. (2005). Investigation of heavily damaged ion implanted Si by atomistic simulation of Rutherford backscattering channeling spectra. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 230(1-4). 613–618. 4 indexed citations
6.
Bianconi, M., et al.. (2005). Channeling characterization of defects in silicon: an atomistic approach. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 230(1-4). 185–192. 14 indexed citations
7.
8.
Bracht, H., Nikolaj Zangenberg, A. Nylandsted Larsen, et al.. (2003). Radiation Enhanced Silicon Self-Diffusion and the Silicon Vacancy at High Temperatures. Physical Review Letters. 91(24). 245502–245502. 64 indexed citations
9.
Lulli, G., et al.. (2003). Computer simulation of ion channeling in Si containing structurally relaxed point defects. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 211(1). 50–54. 4 indexed citations
10.
Beeli, C., Gioṙgio Matteucci, G. Lulli, P. G. Merli, & A. Migliori. (1999). Off-Axis Electron Holography of Nearly-Spherical Faceted Voids in Self-Annealed Implanted Silicon. Materials Characterization. 42(4-5). 241–247. 1 indexed citations
11.
Mestres, N., et al.. (1998). Analysis of Aluminium Ion Implantation Damage into 6H-SiC Epilayers. Materials science forum. 264-268. 733–736. 5 indexed citations
12.
Beeli, C., et al.. (1997). Tridimensional characterization of voids in self-annealed implanted silicon using electron holography. Helvetica physica acta. 70. 3–4. 1 indexed citations
13.
Albertazzi, E., et al.. (1996). Different methods for the determination of damage profiles in Si from RBS-channeling spectra: a comparison. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 118(1-4). 128–132. 52 indexed citations
14.
Barklie, R.C., A. Nylandsted Larsen, F. Priolo, et al.. (1996). 2 MeV Si ion implantation damage in relaxed Si1−Ge. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 120(1-4). 165–168. 2 indexed citations
15.
Barklie, R.C., G. Lulli, Roberta Nipoti, et al.. (1995). EPR and X-ray diffraction study of damage produced by implantation of B ions (50 keV, 1 MeV) or Si ions (50 keV, 700 keV, 1.5 MeV) into silicon. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 96(1-2). 215–218. 17 indexed citations
16.
Lulli, G., A. Parisini, & G. Mattei. (1995). Influence of electron-beam parameters on the radiation-induced formation of graphitic onions. Ultramicroscopy. 60(2). 187–194. 40 indexed citations
17.
Lulli, G., P. G. Merli, R. Rizzoli, M. Berti, & A. V. Drigo. (1989). Anomalous distribution of As during implantation in silicon under self-annealing conditions. Journal of Applied Physics. 66(7). 2940–2946. 6 indexed citations
18.
Lulli, G., et al.. (1987). Minority Carrier Lifetime in Furnace and E‐Beam Annealed CZ Silicon. Journal of The Electrochemical Society. 134(5). 1239–1243. 4 indexed citations
19.
Angelucci, R., G. Lulli, & P. G. Merli. (1986). e-beam-induced lateral seeded epitaxy of silicon on insulator. Materials Letters. 4(4). 185–188. 1 indexed citations
20.
Berti, M., A. V. Drigo, G. Lulli, P. G. Merli, & M. Vittori Antisari. (1986). Dose rate effects on the dynamic annealing mechanism in P+ -implanted silicon. physica status solidi (a). 97(1). 77–85. 13 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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