A.S. Augustine Fletcher

977 total citations
30 papers, 691 citations indexed

About

A.S. Augustine Fletcher is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, A.S. Augustine Fletcher has authored 30 papers receiving a total of 691 indexed citations (citations by other indexed papers that have themselves been cited), including 22 papers in Electrical and Electronic Engineering, 20 papers in Condensed Matter Physics and 8 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in A.S. Augustine Fletcher's work include GaN-based semiconductor devices and materials (20 papers), Silicon Carbide Semiconductor Technologies (10 papers) and Radio Frequency Integrated Circuit Design (9 papers). A.S. Augustine Fletcher is often cited by papers focused on GaN-based semiconductor devices and materials (20 papers), Silicon Carbide Semiconductor Technologies (10 papers) and Radio Frequency Integrated Circuit Design (9 papers). A.S. Augustine Fletcher collaborates with scholars based in India, United States and United Kingdom. A.S. Augustine Fletcher's co-authors include D. Nirmal, J. Ajayan, L. Arivazhagan, Sandip Bhattacharya, P. Murugapandiyan, P. Mohankumar, P. Prajoon, Shubham Tayal, Arathy Varghese and A. Mohanbabu and has published in prestigious journals such as Materials Science and Engineering B, Journal of Electronic Materials and Microelectronic Engineering.

In The Last Decade

A.S. Augustine Fletcher

25 papers receiving 637 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
A.S. Augustine Fletcher India 12 507 501 222 153 127 30 691
Anindya Nath United States 14 415 0.8× 264 0.5× 180 0.8× 235 1.5× 147 1.2× 43 591
Shiro Ozaki Japan 13 477 0.9× 430 0.9× 225 1.0× 115 0.8× 110 0.9× 50 596
C. Dua France 16 784 1.5× 766 1.5× 240 1.1× 134 0.9× 248 2.0× 63 977
Francesca Danesin Italy 8 697 1.4× 775 1.5× 241 1.1× 150 1.0× 159 1.3× 11 828
R. Dettmer United States 11 445 0.9× 320 0.6× 179 0.8× 142 0.9× 99 0.8× 41 567
Yuki Niiyama Japan 13 632 1.2× 736 1.5× 375 1.7× 153 1.0× 96 0.8× 23 802
Jared A. Kearns United States 11 388 0.8× 493 1.0× 124 0.6× 181 1.2× 255 2.0× 24 625
Makoto Kiyama Japan 11 473 0.9× 461 0.9× 286 1.3× 263 1.7× 135 1.1× 24 693
Don Disney United States 12 827 1.6× 531 1.1× 244 1.1× 91 0.6× 98 0.8× 35 943

Countries citing papers authored by A.S. Augustine Fletcher

Since Specialization
Citations

This map shows the geographic impact of A.S. Augustine Fletcher's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A.S. Augustine Fletcher with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A.S. Augustine Fletcher more than expected).

Fields of papers citing papers by A.S. Augustine Fletcher

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A.S. Augustine Fletcher. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A.S. Augustine Fletcher. The network helps show where A.S. Augustine Fletcher may publish in the future.

Co-authorship network of co-authors of A.S. Augustine Fletcher

This figure shows the co-authorship network connecting the top 25 collaborators of A.S. Augustine Fletcher. A scholar is included among the top collaborators of A.S. Augustine Fletcher based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A.S. Augustine Fletcher. A.S. Augustine Fletcher is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Fletcher, A.S. Augustine, et al.. (2025). An Area Efficient Approach to Realize Vedic Multiplier using 4–2 Compressor adder for Image processing Applications. International Journal of Electronics. 1–21.
2.
Murugapandiyan, P., et al.. (2025). Recent advancement in ScAlN/GaN high electron mobility transistors: Materials, properties, and device performance. Materials Science in Semiconductor Processing. 193. 109509–109509. 4 indexed citations
3.
Ajayan, J., et al.. (2025). Inorganic nanocatalysts for energy systems, environmental/industrial processes and healthcare applications: A comprehensive review. Materials Today Sustainability. 32. 101233–101233. 1 indexed citations
4.
Murugapandiyan, P., et al.. (2025). Recent advancement in β-Ga2O3 MOSFETs: From material growth to device architectures for high-power electronics. Microelectronic Engineering. 299. 112359–112359.
5.
Murugapandiyan, P., et al.. (2024). Enhancement Mode AlGaN/GaN MISHEMT on Ultra-Wide Band Gap β-Ga2O3 Substrate for RF and Power Electronics. Journal of Electronic Materials. 53(6). 2973–2987. 4 indexed citations
6.
Fletcher, A.S. Augustine, et al.. (2024). 4.87 kV SiC MOSFET Using HfSiOx/SiO2 Gate Dielectrics Combined with PN Pillars. Journal of Electronic Materials. 53(5). 2601–2608.
7.
Murugapandiyan, P., et al.. (2023). A comparative analysis of GaN and InGaN/GaN coupling channel HEMTs on silicon carbide substrate for high linear RF applications. Micro and Nanostructures. 177. 207545–207545. 9 indexed citations
8.
Murugapandiyan, P., et al.. (2023). High performance enhancement mode GaN HEMTs using β-Ga2O3 buffer for power switching and high frequency applications: A simulation study. Microelectronics Journal. 140. 105946–105946. 18 indexed citations
9.
Fletcher, A.S. Augustine, et al.. (2022). A 28-GHz Low-Loss AlGaN/GaN HEMT for TX/RX Switches in 5G Base Stations. Journal of Electronic Materials. 51(3). 1215–1225. 4 indexed citations
10.
Ajayan, J., et al.. (2022). Challenges in material processing and reliability issues in AlGaN/GaN HEMTs on silicon wafers for future RF power electronics & switching applications: A critical review. Materials Science in Semiconductor Processing. 151. 106982–106982. 79 indexed citations
11.
Ajayan, J., D. Nirmal, Shubham Tayal, et al.. (2021). Nanosheet field effect transistors-A next generation device to keep Moore's law alive: An intensive study. Microelectronics Journal. 114. 105141–105141. 77 indexed citations
12.
Fletcher, A.S. Augustine, et al.. (2021). 60 GHz Double Deck T-Gate AlN/GaN/AlGaN HEMT for V-Band Satellites. Silicon. 14(11). 5941–5949. 7 indexed citations
13.
Nirmal, D., et al.. (2021). 6 GHz GaN HEMT Linear Power Amplifier. 219–222. 1 indexed citations
14.
Fletcher, A.S. Augustine, D. Nirmal, J. Ajayan, & L. Arivazhagan. (2020). An Intensive Study on Assorted Substrates Suitable for High JFOM AlGaN/GaN HEMT. Silicon. 13(5). 1591–1598. 27 indexed citations
15.
Arivazhagan, L., D. Nirmal, D. J. Godfrey, et al.. (2019). Improved RF and DC performance in AlGaN/GaN HEMT by P-type doping in GaN buffer for millimetre-wave applications. AEU - International Journal of Electronics and Communications. 108. 189–194. 33 indexed citations
16.
Fletcher, A.S. Augustine, D. Nirmal, L. Arivazhagan, & J. Ajayan. (2019). Influence of assorted back barriers on AlGaN/GaN HEMT for 5G K-band applications. 239–242.
17.
Fletcher, A.S. Augustine & D. Nirmal. (2017). A survey of Gallium Nitride HEMT for RF and high power applications. Superlattices and Microstructures. 109. 519–537. 203 indexed citations
18.
Fletcher, A.S. Augustine, et al.. (2017). Design and modeling of HEMT using field plate technique. 62. 157–159. 3 indexed citations
19.
Fletcher, A.S. Augustine, et al.. (2014). A Survey on Leakage Power Reduction Techniques by Using Power Gating Methodology. International Journal of Engineering Trends and Technology. 9(11). 566–571. 2 indexed citations
20.
Fletcher, A.S. Augustine, et al.. (2014). A novel hybrid multiple mode power gating. 1–4. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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