V. N. Ramakrishnan

423 total citations
41 papers, 290 citations indexed

About

V. N. Ramakrishnan is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Cellular and Molecular Neuroscience. According to data from OpenAlex, V. N. Ramakrishnan has authored 41 papers receiving a total of 290 indexed citations (citations by other indexed papers that have themselves been cited), including 39 papers in Electrical and Electronic Engineering, 6 papers in Condensed Matter Physics and 6 papers in Cellular and Molecular Neuroscience. Recurrent topics in V. N. Ramakrishnan's work include Advancements in Semiconductor Devices and Circuit Design (20 papers), Semiconductor materials and devices (17 papers) and Advanced Memory and Neural Computing (10 papers). V. N. Ramakrishnan is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (20 papers), Semiconductor materials and devices (17 papers) and Advanced Memory and Neural Computing (10 papers). V. N. Ramakrishnan collaborates with scholars based in India, Singapore and Japan. V. N. Ramakrishnan's co-authors include Jianping Chen, Yuan Zhuang, Ben M. Chen, Raghavan Srinivasan, S. Jayaprakash, N. B. Balamurugan, A. Mohanbabu, Arathy Varghese, P. Murugapandiyan and P. Vimala and has published in prestigious journals such as IEEE Access, Semiconductor Science and Technology and Microelectronics Reliability.

In The Last Decade

V. N. Ramakrishnan

36 papers receiving 274 citations

Peers

V. N. Ramakrishnan
Nachiket Desai United States
Hyunggun Ma South Korea
Danial Khan South Korea
Jin Wu China
Yves Audet Canada
Junjie Lu China
Nachiket Desai United States
V. N. Ramakrishnan
Citations per year, relative to V. N. Ramakrishnan V. N. Ramakrishnan (= 1×) peers Nachiket Desai

Countries citing papers authored by V. N. Ramakrishnan

Since Specialization
Citations

This map shows the geographic impact of V. N. Ramakrishnan's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by V. N. Ramakrishnan with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites V. N. Ramakrishnan more than expected).

Fields of papers citing papers by V. N. Ramakrishnan

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by V. N. Ramakrishnan. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by V. N. Ramakrishnan. The network helps show where V. N. Ramakrishnan may publish in the future.

Co-authorship network of co-authors of V. N. Ramakrishnan

This figure shows the co-authorship network connecting the top 25 collaborators of V. N. Ramakrishnan. A scholar is included among the top collaborators of V. N. Ramakrishnan based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with V. N. Ramakrishnan. V. N. Ramakrishnan is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Ramakrishnan, V. N., et al.. (2023). An Optimized Vertical GaN Parallel Split Gate Trench MOSFET Device Structure for Improved Switching Performance. IEEE Access. 11. 46998–47006. 5 indexed citations
3.
Vimala, P., et al.. (2022). Electrostatic characteristics of a high-k stacked gate-all-around heterojunction tunnel field-effect transistor using the superposition principle. Journal of Computational Electronics. 21(1). 181–190. 4 indexed citations
4.
Samuel, T. S. Arun, et al.. (2021). Influence of trap carriers in SiO2/HfO2 stacked dielectric cylindrical gate tunnel fet. Silicon. 14(9). 4589–4600. 1 indexed citations
5.
Ramakrishnan, V. N., et al.. (2021). Electron transport via a few-dopant cluster in the presence of counter-dopants in silicon nanowire transistors. Applied Physics Express. 14(5). 55002–55002. 4 indexed citations
6.
Ramakrishnan, V. N., et al.. (2021). A Novel Approach to Analyze the Resistance of the RRAM Based on the Conductive Nano Filament Length and Width Variation. Transactions on Electrical and Electronic Materials. 23(5). 476–482. 2 indexed citations
7.
Ramakrishnan, V. N., et al.. (2021). Conductive Filament Variation of RRAM and Its Impact on Single Event Upset. Transactions on Electrical and Electronic Materials. 23(3). 247–253.
8.
Samuel, T. S. Arun, et al.. (2020). Investigation of tri-gate hetero-junction stacked dielectric transistor for improved ON-current. Materials Today Proceedings. 45. 4026–4035. 2 indexed citations
9.
Ramakrishnan, V. N., et al.. (2020). Vertical GaN Split Gate Trench MOSFET with Improved High Frequency FOM. 3 indexed citations
10.
Murugapandiyan, P., et al.. (2020). Performance analysis of HfO2/InAlN/AlN/GaN HEMT with AlN buffer layer for high power microwave applications. Journal of Science Advanced Materials and Devices. 5(2). 192–198. 23 indexed citations
11.
Ramakrishnan, V. N., et al.. (2020). Design of Radiation Hardened Complementary Folded Cascode Amplifier. Materials Today Proceedings. 24. 1766–1776. 2 indexed citations
12.
Ramakrishnan, V. N., et al.. (2020). Modeling and Simulation of Gated Memristor. Materials Today Proceedings. 24. 1777–1787. 4 indexed citations
14.
Ramakrishnan, V. N., et al.. (2016). Novel Three-phase Four-wire UPQC Topology Using Adaptive-network-based Fuzzy Inference System for Voltage Sag Compensation. Research Journal of Applied Sciences Engineering and Technology. 12(10). 1044–1056.
15.
Ramakrishnan, V. N., et al.. (2016). A Soft Error Study on Tri-gate based FinFET and Junctionless-FinFET 6T SRAM Cell – A Comparison. TELKOMNIKA (Telecommunication Computing Electronics and Control). 14(4). 1299–1299. 1 indexed citations
16.
Jayaprakash, S. & V. N. Ramakrishnan. (2014). A New Single-stage Solar Based Controlled Full-bridge DC-DC Converter. Indian Journal of Science and Technology. 7(9). 1382–1386. 8 indexed citations
17.
18.
Balamurugan, N. B., et al.. (2013). A 2D Transconductance and Sub-threshold behavior model for triple material surrounding gate (TMSG) MOSFETs. Microelectronics Journal. 44(12). 1159–1164. 18 indexed citations
19.
Ramakrishnan, V. N. & Raghavan Srinivasan. (2012). Soft error study in double gated FinFET-based SRAM cells with simultaneous and independent driven gates. Microelectronics Journal. 43(11). 888–893. 20 indexed citations
20.
Chen, Ben M., et al.. (2001). A web-based virtual laboratory on a frequency modulation experiment. IEEE Transactions on Systems Man and Cybernetics Part C (Applications and Reviews). 31(3). 295–303. 98 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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