L. Arivazhagan

1.1k citations

42 papers · 757 indexed · h-index 15

Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials 35
Electrical and Electronic Engineering top 10%
- Semiconductor materials and devices 21
- Silicon Carbide Semiconductor Technologies 17
- Radio Frequency Integrated Circuit Design 11
- Advancements in Semiconductor Devices and Circuit Design 4
Electronic, Optical and Magnetic Materials
- Ga2O3 and related materials 8
Atomic and Molecular Physics, and Optics
- Semiconductor Quantum Structures and Devices 11
Materials Chemistry
Polymers and Plastics
- Conducting polymers and applications 2

Co-authors: D. Nirmal J. Ajayan A.S. Augustine Fletcher P. Mohankumar P. Prajoon M. Saravanan Anwar Jarndal D. J. Godfrey
Cited by: Condensed Matter Physics Electrical and Electronic Engineering Electronic, Optical and Magnetic Materials
Journals: IEEE Sensors Journal (1 paper)Journal of Electronic Materials (1 paper)Materials Science in Semiconductor Processing (1 paper)
Partner nations: India United Arab Emirates Taiwan

In The Last Decade

L. Arivazhagan

39 papers receiving 704 citations

Peers

Countries citing papers authored by L. Arivazhagan

Since Specialization

Citations

This map shows the geographic impact of L. Arivazhagan's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by L. Arivazhagan with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites L. Arivazhagan more than expected).

Fields of papers citing papers by L. Arivazhagan

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by L. Arivazhagan. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by L. Arivazhagan. The network helps show where L. Arivazhagan may publish in the future.

Co-authorship network

The 25 scholars most cited alongside L. Arivazhagan, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with L. Arivazhagan Line = papers co-authored together L. Arivazhagan links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Physics based modeling of AlGaN/BGaN quantum well based ultra violet light emitting diodes Optical and Quantum Electronics ·M. Manikandan,D. Nirmal,J. Ajayan,L. Arivazhagan,P. Prajoon,G. Dhivyasri,M. Jagadeeswari	2022	4
2	A 28-GHz Low-Loss AlGaN/GaN HEMT for TX/RX Switches in 5G Base Stations Journal of Electronic Materials ·A.S. Augustine Fletcher,D. Nirmal,L. Arivazhagan,J. Ajayan,Merlin Gilbert Raj,K. Husna Hamza,P. Murugapandiyan,Ramkumar Natarajan	2022	4
3	GaN HEMT with Enhanced Back-Barrier for Power Electronics Applications Anwar Jarndal,L. Arivazhagan,Eqab Al Majali,Soliman A. Mahmoud	2022	2
4	Nanosheet field effect transistors-A next generation device to keep Moore's law alive: An intensive study Microelectronics Journal ·J. Ajayan,D. Nirmal,Shubham Tayal,Sandip Bhattacharya,L. Arivazhagan,A.S. Augustine Fletcher,P. Murugapandiyan,D. Ajitha	2021	77
5	A critical review of design and fabrication challenges in InP HEMTs for future terahertz frequency applications Materials Science in Semiconductor Processing ·J. Ajayan,D. Nirmal,Ribu Mathew,Dheena Kurian,P. Mohankumar,L. Arivazhagan,D. Ajitha	2021	29
6	60 GHz Double Deck T-Gate AlN/GaN/AlGaN HEMT for V-Band Satellites Silicon ·A.S. Augustine Fletcher,D. Nirmal,J. Ajayan,L. Arivazhagan,K. Husna Hamza,P. Murugapandiyan	2021	7
7	6 GHz GaN HEMT Linear Power Amplifier Hamza. K Husna,D. Nirmal,S. Merlin Gilbert Raj,J. Ajayan,L. Arivazhagan,A.S. Augustine Fletcher	2021	1
8	Intensive Study of Field-Plated AlGaN/GaN HEMT on Silicon Substrate for High Power RF Applications Silicon ·J. S. Raj Kumar,D. Nirmal,Manish Kumar Hooda,Surinder Singh,J. Ajayan,L. Arivazhagan	2021	11
9	Impact of AlGaN Back Barrier in AlGaN/GaN HEMT on GaN substrate Husna Hamza K.,D. Nirmal,L. Arivazhagan	2020	3
10	An Intensive Study on Assorted Substrates Suitable for High JFOM AlGaN/GaN HEMT Silicon ·A.S. Augustine Fletcher,D. Nirmal,J. Ajayan,L. Arivazhagan	2020	27
11	A Numerical Investigation of Heat Suppression in HEMT for Power Electronics Application Silicon ·L. Arivazhagan,D. Nirmal,P. Pavan Kumar Reddy,J. Ajayan,D. J. Godfrey,P. Prajoon,Ashok K Ray	2020	8
12	Variable thermal resistance model of GaN-on-SiC with substrate scalability Journal of Computational Electronics ·L. Arivazhagan,D. Nirmal,Subhash Chander,J. Ajayan,D. J. Godfrey,J. S. Rajkumar,S. Lakshmi	2020	3
13	Strain-Induced Ionic Polarization Dependent AlGaN/GaN High Electron Mobility Transistor D. J. Godfrey,D. Nirmal,L. Arivazhagan,D. Godwinraj,N. Mohan Kumar,Wen-Kuan Yeh	2020	1
14	Improved RF and DC performance in AlGaN/GaN HEMT by P-type doping in GaN buffer for millimetre-wave applications AEU - International Journal of Electronics and Communications ·L. Arivazhagan,D. Nirmal,D. J. Godfrey,J. Ajayan,P. Prajoon,A.S. Augustine Fletcher,A. Amir Anton Jone,J. S. Raj Kumar	2019	33
15	Influence of assorted back barriers on AlGaN/GaN HEMT for 5G K-band applications A.S. Augustine Fletcher,D. Nirmal,L. Arivazhagan,J. Ajayan	2019	0
16	Enhancement of drain current in AlGaN/GaN HEMT using AlN passivation AIP conference proceedings ·L. Arivazhagan,D. Nirmal,J. Ajayan,D. J. Godfrey,J. S. Rajkumar,S. Lakshmi	2019	0
17	A review of blue light emitting diodes for future solid state lighting and visible light communication applications Superlattices and Microstructures ·M. Manikandan,D. Nirmal,J. Ajayan,P. Mohankumar,P. Prajoon,L. Arivazhagan	2019	24
18	A novel ZnPc nanorod derived piezoelectric nanogenerator for energy harvesting Physica E Low-dimensional Systems and Nanostructures ·D. J. Godfrey,D. Nirmal,L. Arivazhagan,R. Rathes Kannan,P. Issac Nelson,S. Rajesh,B. Vidhya,N. Mohankumar	2019	6
19	Modeling of self-heating for AlGaN/GaN HEMT with thermal conductivity degradation effect AIP conference proceedings ·L. Arivazhagan,D. Nirmal,J. Ajayan,D. J. Godfrey,J. S. Rakkumar,S. Lakshmi	2019	4
20	Investigation of impact of gate underlap/overlap on the analog/RF performance of composite channel double gate MOSFETs Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ·J. Ajayan,D. Nirmal,Dheena Kurian,P. Mohankumar,L. Arivazhagan,A.S. Augustine Fletcher,T.D. Subash,M. Saravanan	2019	4

About L. Arivazhagan

L. Arivazhagan is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials, having authored 42 papers that have together received 757 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (35 papers), Semiconductor materials and devices (21 papers), Silicon Carbide Semiconductor Technologies (17 papers), Radio Frequency Integrated Circuit Design (11 papers), Semiconductor Quantum Structures and Devices (11 papers), Ga2O3 and related materials (8 papers), Advancements in Semiconductor Devices and Circuit Design (4 papers) and Conducting polymers and applications (2 papers). The work is most often cited by research in Condensed Matter Physics (395 citations), Electrical and Electronic Engineering (580 citations) and Electronic, Optical and Magnetic Materials (163 citations). L. Arivazhagan has collaborated with scholars based in India, United Arab Emirates and Taiwan. Frequent co-authors include D. Nirmal, J. Ajayan, A.S. Augustine Fletcher, P. Mohankumar, P. Prajoon, M. Saravanan, Anwar Jarndal, D. J. Godfrey, P. Murugapandiyan and Shubham Tayal. Their work appears in journals such as IEEE Sensors Journal, Journal of Electronic Materials and Materials Science in Semiconductor Processing.

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