L. Arivazhagan

1.1k total citations
42 papers, 757 citations indexed

About

L. Arivazhagan is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, L. Arivazhagan has authored 42 papers receiving a total of 757 indexed citations (citations by other indexed papers that have themselves been cited), including 37 papers in Electrical and Electronic Engineering, 35 papers in Condensed Matter Physics and 11 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in L. Arivazhagan's work include GaN-based semiconductor devices and materials (35 papers), Semiconductor materials and devices (21 papers) and Silicon Carbide Semiconductor Technologies (17 papers). L. Arivazhagan is often cited by papers focused on GaN-based semiconductor devices and materials (35 papers), Semiconductor materials and devices (21 papers) and Silicon Carbide Semiconductor Technologies (17 papers). L. Arivazhagan collaborates with scholars based in India, United Arab Emirates and Taiwan. L. Arivazhagan's co-authors include D. Nirmal, J. Ajayan, A.S. Augustine Fletcher, P. Mohankumar, P. Prajoon, M. Saravanan, Anwar Jarndal, D. J. Godfrey, P. Murugapandiyan and Shubham Tayal and has published in prestigious journals such as IEEE Sensors Journal, Journal of Electronic Materials and Materials Science in Semiconductor Processing.

In The Last Decade

L. Arivazhagan

39 papers receiving 704 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
L. Arivazhagan India 15 580 395 163 154 134 42 757
Xiaobo Li China 16 477 0.8× 287 0.7× 181 1.1× 188 1.2× 131 1.0× 70 656
Kanglin Xiong United States 15 359 0.6× 298 0.8× 170 1.0× 254 1.6× 191 1.4× 42 652
Dong‐Seok Kim South Korea 16 639 1.1× 688 1.7× 392 2.4× 287 1.9× 146 1.1× 87 1.0k
Yimin Chen China 15 231 0.4× 360 0.9× 211 1.3× 180 1.2× 66 0.5× 51 599
Haicheng Cao Saudi Arabia 16 272 0.5× 357 0.9× 248 1.5× 319 2.1× 92 0.7× 47 632
F. Pezzimenti Italy 24 1.0k 1.8× 177 0.4× 96 0.6× 372 2.4× 428 3.2× 75 1.3k
Liang Jing China 10 204 0.4× 210 0.5× 97 0.6× 170 1.1× 68 0.5× 18 406
Chun-Hyung Cho South Korea 9 357 0.6× 204 0.5× 135 0.8× 79 0.5× 146 1.1× 42 492
Yeong Jae Shin South Korea 11 301 0.5× 243 0.6× 503 3.1× 643 4.2× 197 1.5× 24 910
Kai Tang China 13 181 0.3× 103 0.3× 221 1.4× 212 1.4× 206 1.5× 39 459

Countries citing papers authored by L. Arivazhagan

Since Specialization
Citations

This map shows the geographic impact of L. Arivazhagan's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by L. Arivazhagan with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites L. Arivazhagan more than expected).

Fields of papers citing papers by L. Arivazhagan

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by L. Arivazhagan. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by L. Arivazhagan. The network helps show where L. Arivazhagan may publish in the future.

Co-authorship network of co-authors of L. Arivazhagan

This figure shows the co-authorship network connecting the top 25 collaborators of L. Arivazhagan. A scholar is included among the top collaborators of L. Arivazhagan based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with L. Arivazhagan. L. Arivazhagan is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Fletcher, A.S. Augustine, et al.. (2022). A 28-GHz Low-Loss AlGaN/GaN HEMT for TX/RX Switches in 5G Base Stations. Journal of Electronic Materials. 51(3). 1215–1225. 4 indexed citations
2.
Manikandan, M., et al.. (2022). Physics based modeling of AlGaN/BGaN quantum well based ultra violet light emitting diodes. Optical and Quantum Electronics. 54(3). 4 indexed citations
3.
Ajayan, J., D. Nirmal, Shubham Tayal, et al.. (2021). Nanosheet field effect transistors-A next generation device to keep Moore's law alive: An intensive study. Microelectronics Journal. 114. 105141–105141. 77 indexed citations
4.
Fletcher, A.S. Augustine, et al.. (2021). 60 GHz Double Deck T-Gate AlN/GaN/AlGaN HEMT for V-Band Satellites. Silicon. 14(11). 5941–5949. 7 indexed citations
5.
Ajayan, J., et al.. (2021). A critical review of design and fabrication challenges in InP HEMTs for future terahertz frequency applications. Materials Science in Semiconductor Processing. 128. 105753–105753. 29 indexed citations
6.
Nirmal, D., et al.. (2021). 6 GHz GaN HEMT Linear Power Amplifier. 219–222. 1 indexed citations
7.
Nirmal, D., et al.. (2021). Highly scaled graded channel GaN HEMT with peak drain current of 2.48 A/mm. AEU - International Journal of Electronics and Communications. 136. 153774–153774. 20 indexed citations
8.
Nirmal, D., et al.. (2020). Impact of AlGaN Back Barrier in AlGaN/GaN HEMT on GaN substrate. 290–293. 3 indexed citations
9.
Arivazhagan, L., D. Nirmal, J. Ajayan, et al.. (2020). A Numerical Investigation of Heat Suppression in HEMT for Power Electronics Application. Silicon. 13(9). 3039–3046. 8 indexed citations
10.
Fletcher, A.S. Augustine, D. Nirmal, J. Ajayan, & L. Arivazhagan. (2020). An Intensive Study on Assorted Substrates Suitable for High JFOM AlGaN/GaN HEMT. Silicon. 13(5). 1591–1598. 27 indexed citations
11.
Arivazhagan, L., et al.. (2020). Variable thermal resistance model of GaN-on-SiC with substrate scalability. Journal of Computational Electronics. 19(4). 1546–1554. 3 indexed citations
12.
Jarndal, Anwar, L. Arivazhagan, & D. Nirmal. (2020). On the performance of GaN‐on‐Silicon, Silicon‐Carbide, and Diamond substrates. International Journal of RF and Microwave Computer-Aided Engineering. 30(6). 40 indexed citations
13.
Manikandan, M., D. Nirmal, J. Ajayan, et al.. (2019). A review of blue light emitting diodes for future solid state lighting and visible light communication applications. Superlattices and Microstructures. 136. 106294–106294. 24 indexed citations
14.
Arivazhagan, L., et al.. (2019). Modeling of self-heating for AlGaN/GaN HEMT with thermal conductivity degradation effect. AIP conference proceedings. 2201. 20010–20010. 4 indexed citations
15.
Arivazhagan, L., D. Nirmal, D. J. Godfrey, et al.. (2019). Improved RF and DC performance in AlGaN/GaN HEMT by P-type doping in GaN buffer for millimetre-wave applications. AEU - International Journal of Electronics and Communications. 108. 189–194. 33 indexed citations
16.
Fletcher, A.S. Augustine, D. Nirmal, L. Arivazhagan, & J. Ajayan. (2019). Influence of assorted back barriers on AlGaN/GaN HEMT for 5G K-band applications. 239–242.
17.
Godfrey, D. J., D. Nirmal, L. Arivazhagan, et al.. (2019). A novel ZnPc nanorod derived piezoelectric nanogenerator for energy harvesting. Physica E Low-dimensional Systems and Nanostructures. 118. 113931–113931. 6 indexed citations
18.
Arivazhagan, L., et al.. (2019). Enhancement of drain current in AlGaN/GaN HEMT using AlN passivation. AIP conference proceedings. 2201. 20009–20009.
19.
Ajayan, J., D. Nirmal, P. Mohankumar, et al.. (2019). Investigation of impact of gate underlap/overlap on the analog/RF performance of composite channel double gate MOSFETs. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 37(6). 4 indexed citations
20.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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