L. Arivazhagan

1.1k citations

42 papers · 757 indexed · h-index 15

Co-authors: D. Nirmal J. Ajayan A.S. Augustine Fletcher P. Mohankumar P. Prajoon M. Saravanan Anwar Jarndal D. J. Godfrey
Topics: GaN-based semiconductor devices and materials (35 papers)Semiconductor materials and devices (21 papers)Silicon Carbide Semiconductor Technologies (17 papers)
Cited by: Condensed Matter Physics Electrical and Electronic Engineering Electronic, Optical and Magnetic Materials
Journals: IEEE Sensors Journal Journal of Electronic Materials Materials Science in Semiconductor Processing
Partner nations: India United Arab Emirates Taiwan

In The Last Decade

L. Arivazhagan

39 papers receiving 704 citations

Peers

Countries citing papers authored by L. Arivazhagan

Since Specialization

Citations

This map shows the geographic impact of L. Arivazhagan's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by L. Arivazhagan with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites L. Arivazhagan more than expected).

Fields of papers citing papers by L. Arivazhagan

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by L. Arivazhagan. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by L. Arivazhagan. The network helps show where L. Arivazhagan may publish in the future.

Co-authorship network of co-authors of L. Arivazhagan

This figure shows the co-authorship network connecting the top 25 collaborators of L. Arivazhagan. A scholar is included among the top collaborators of L. Arivazhagan based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with L. Arivazhagan. L. Arivazhagan is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Physics based modeling of AlGaN/BGaN quantum well based ultra violet light emitting diodes 2022 ·Optical and Quantum Electronics ·M. Manikandan,D. Nirmal,J. Ajayan,L. Arivazhagan,P. Prajoon,(unknown),(unknown)	4
2	A 28-GHz Low-Loss AlGaN/GaN HEMT for TX/RX Switches in 5G Base Stations 2022 ·Journal of Electronic Materials ·A.S. Augustine Fletcher,D. Nirmal,L. Arivazhagan,J. Ajayan,(unknown),(unknown),P. Murugapandiyan,(unknown)	4
3	GaN HEMT with Enhanced Back-Barrier for Power Electronics Applications 2022 ·Anwar Jarndal,L. Arivazhagan,(unknown),Soliman A. Mahmoud	2
4	Nanosheet field effect transistors-A next generation device to keep Moore's law alive: An intensive study 2021 ·Microelectronics Journal ·J. Ajayan,D. Nirmal,Shubham Tayal,Sandip Bhattacharya,L. Arivazhagan,A.S. Augustine Fletcher,P. Murugapandiyan,(unknown)	77
5	A critical review of design and fabrication challenges in InP HEMTs for future terahertz frequency applications 2021 ·Materials Science in Semiconductor Processing ·J. Ajayan,D. Nirmal,Ribu Mathew,(unknown),P. Mohankumar,L. Arivazhagan,(unknown)	29
6	60 GHz Double Deck T-Gate AlN/GaN/AlGaN HEMT for V-Band Satellites 2021 ·Silicon ·A.S. Augustine Fletcher,D. Nirmal,J. Ajayan,L. Arivazhagan,(unknown),P. Murugapandiyan	7
7	6 GHz GaN HEMT Linear Power Amplifier 2021 ·(unknown),D. Nirmal,(unknown),J. Ajayan,L. Arivazhagan,A.S. Augustine Fletcher	1
8	Intensive Study of Field-Plated AlGaN/GaN HEMT on Silicon Substrate for High Power RF Applications 2021 ·Silicon ·(unknown),D. Nirmal,(unknown),Surinder Singh,J. Ajayan,L. Arivazhagan	11
9	Impact of AlGaN Back Barrier in AlGaN/GaN HEMT on GaN substrate 2020 ·(unknown),D. Nirmal,L. Arivazhagan	3
10	An Intensive Study on Assorted Substrates Suitable for High JFOM AlGaN/GaN HEMT 2020 ·Silicon ·A.S. Augustine Fletcher,D. Nirmal,J. Ajayan,L. Arivazhagan	27
11	A Numerical Investigation of Heat Suppression in HEMT for Power Electronics Application 2020 ·Silicon ·L. Arivazhagan,D. Nirmal,(unknown),J. Ajayan,D. J. Godfrey,P. Prajoon,Ashok K Ray	8
12	Variable thermal resistance model of GaN-on-SiC with substrate scalability 2020 ·Journal of Computational Electronics ·L. Arivazhagan,D. Nirmal,(unknown),J. Ajayan,D. J. Godfrey,(unknown),(unknown)	3
13	Strain-Induced Ionic Polarization Dependent AlGaN/GaN High Electron Mobility Transistor 2020 ·D. J. Godfrey,D. Nirmal,L. Arivazhagan,(unknown),(unknown),(unknown)	1
14	Improved RF and DC performance in AlGaN/GaN HEMT by P-type doping in GaN buffer for millimetre-wave applications 2019 ·AEU - International Journal of Electronics and Communications ·L. Arivazhagan,D. Nirmal,D. J. Godfrey,J. Ajayan,P. Prajoon,A.S. Augustine Fletcher,(unknown),(unknown)	33
15	Influence of assorted back barriers on AlGaN/GaN HEMT for 5G K-band applications 2019 ·A.S. Augustine Fletcher,D. Nirmal,L. Arivazhagan,J. Ajayan	0
16	Enhancement of drain current in AlGaN/GaN HEMT using AlN passivation 2019 ·AIP conference proceedings ·L. Arivazhagan,D. Nirmal,J. Ajayan,D. J. Godfrey,(unknown),(unknown)	0
17	A review of blue light emitting diodes for future solid state lighting and visible light communication applications 2019 ·Superlattices and Microstructures ·M. Manikandan,D. Nirmal,J. Ajayan,P. Mohankumar,P. Prajoon,L. Arivazhagan	24
18	A novel ZnPc nanorod derived piezoelectric nanogenerator for energy harvesting 2019 ·Physica E Low-dimensional Systems and Nanostructures ·D. J. Godfrey,D. Nirmal,L. Arivazhagan,R. Rathes Kannan,(unknown),S. Rajesh,B. Vidhya,N. Mohankumar	6
19	Modeling of self-heating for AlGaN/GaN HEMT with thermal conductivity degradation effect 2019 ·AIP conference proceedings ·L. Arivazhagan,D. Nirmal,J. Ajayan,D. J. Godfrey,(unknown),(unknown)	4
20	Investigation of impact of gate underlap/overlap on the analog/RF performance of composite channel double gate MOSFETs 2019 ·Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ·J. Ajayan,D. Nirmal,(unknown),P. Mohankumar,L. Arivazhagan,A.S. Augustine Fletcher,(unknown),M. Saravanan	4

About L. Arivazhagan

L. Arivazhagan is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials, having authored 42 papers that have together received 757 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (35 papers), Semiconductor materials and devices (21 papers) and Silicon Carbide Semiconductor Technologies (17 papers). The work is most often cited by research in Condensed Matter Physics (395 citations), Electrical and Electronic Engineering (580 citations) and Electronic, Optical and Magnetic Materials (163 citations). L. Arivazhagan has collaborated with scholars based in India, United Arab Emirates and Taiwan. Frequent co-authors include D. Nirmal, J. Ajayan, A.S. Augustine Fletcher, P. Mohankumar, P. Prajoon, M. Saravanan, Anwar Jarndal, D. J. Godfrey, P. Murugapandiyan and Shubham Tayal. Their work appears in journals such as IEEE Sensors Journal, Journal of Electronic Materials and Materials Science in Semiconductor Processing.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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