Shubham Tayal

1.3k total citations
71 papers, 816 citations indexed

About

Shubham Tayal is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Shubham Tayal has authored 71 papers receiving a total of 816 indexed citations (citations by other indexed papers that have themselves been cited), including 61 papers in Electrical and Electronic Engineering, 12 papers in Biomedical Engineering and 6 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Shubham Tayal's work include Advancements in Semiconductor Devices and Circuit Design (53 papers), Semiconductor materials and devices (47 papers) and Ferroelectric and Negative Capacitance Devices (21 papers). Shubham Tayal is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (53 papers), Semiconductor materials and devices (47 papers) and Ferroelectric and Negative Capacitance Devices (21 papers). Shubham Tayal collaborates with scholars based in India, Switzerland and Germany. Shubham Tayal's co-authors include Ashutosh Nandi, Laxman Raju Thoutam, Sresta Valasa, J. Ajayan, Sandip Bhattacharya, Shiromani Balmukund Rahi, Abhishek Upadhyay, D. Nirmal, Biswajit Jena and L. M. I. Leo Joseph and has published in prestigious journals such as IEEE Access, Journal of Physics D Applied Physics and IEEE Transactions on Electron Devices.

In The Last Decade

Shubham Tayal

64 papers receiving 755 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Shubham Tayal India 18 719 195 93 32 27 71 816
Wanling Deng China 13 459 0.6× 91 0.5× 97 1.0× 82 2.6× 31 1.1× 79 545
Doyoung Jang Belgium 23 1.3k 1.9× 356 1.8× 184 2.0× 16 0.5× 35 1.3× 58 1.5k
Hushan Cui China 9 360 0.5× 88 0.5× 111 1.2× 50 1.6× 50 1.9× 19 426
Jiahan Yu China 12 387 0.5× 144 0.7× 220 2.4× 13 0.4× 24 0.9× 35 505
Johannes Sturm Austria 11 443 0.6× 101 0.5× 69 0.7× 10 0.3× 47 1.7× 60 495
Ben Li China 10 385 0.5× 108 0.6× 91 1.0× 16 0.5× 25 0.9× 19 472
Sajad A. Loan India 17 979 1.4× 424 2.2× 88 0.9× 86 2.7× 26 1.0× 108 1.1k
Paul Lindner Austria 11 269 0.4× 133 0.7× 54 0.6× 10 0.3× 19 0.7× 61 432
Alexander Grill Belgium 16 802 1.1× 87 0.4× 275 3.0× 44 1.4× 34 1.3× 69 965
Ashish Raman India 16 836 1.2× 370 1.9× 80 0.9× 60 1.9× 41 1.5× 92 901

Countries citing papers authored by Shubham Tayal

Since Specialization
Citations

This map shows the geographic impact of Shubham Tayal's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Shubham Tayal with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Shubham Tayal more than expected).

Fields of papers citing papers by Shubham Tayal

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Shubham Tayal. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Shubham Tayal. The network helps show where Shubham Tayal may publish in the future.

Co-authorship network of co-authors of Shubham Tayal

This figure shows the co-authorship network connecting the top 25 collaborators of Shubham Tayal. A scholar is included among the top collaborators of Shubham Tayal based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Shubham Tayal. Shubham Tayal is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Valasa, Sresta, et al.. (2025). Interface trap dynamics and thermal effects in novel junctionless dual gate inverted-U-shaped FinFETs for sub-5 nm node: device to circuit level implementation. Journal of Physics D Applied Physics. 58(13). 135114–135114. 1 indexed citations
3.
Valasa, Sresta, et al.. (2024). Design Space Optimization for Eradication of NDR Effect in Dielectric/Ferroelectric-Stacked Negative Capacitance Multigate FETs at Sub-3 nm Technology for Digital/ Analog/RF Applications. IEEE Transactions on Dielectrics and Electrical Insulation. 32(2). 769–778. 7 indexed citations
4.
Valasa, Sresta, et al.. (2024). Spacer Design Strategies at Sub-5-nm Technology Node for Junctionless Forksheet FET: Bridging Device Optimization and Circuit Efficacy—A Dielectric Perspective. IEEE Transactions on Dielectrics and Electrical Insulation. 32(4). 1997–2004. 3 indexed citations
5.
Samuel, T. S. Arun, Young Suh Song, Shubham Tayal, P. Vimala, & Shiromani Balmukund Rahi. (2023). Tunneling Field Effect Transistors.
6.
Tayal, Shubham, Shiromani Balmukund Rahi, Abhishek Upadhyay, et al.. (2022). Incorporating Bottom-Up Approach Into Device/Circuit Co-Design for SRAM-Based Cache Memory Applications. IEEE Transactions on Electron Devices. 69(11). 6127–6132. 15 indexed citations
7.
Valasa, Sresta, Shubham Tayal, & Laxman Raju Thoutam. (2022). Design Insights into Thermal Performance of Vertically Stacked JL-NSFET with High-k Gate Dielectric for Sub 5-nm Technology Node. ECS Journal of Solid State Science and Technology. 11(4). 41008–41008. 17 indexed citations
8.
Valasa, Sresta, Shubham Tayal, & Laxman Raju Thoutam. (2022). Performance Evaluation of Spacer Dielectric Engineered Vertically Stacked Junctionless Nanosheet FET for Sub-5 nm Technology Node. ECS Journal of Solid State Science and Technology. 11(9). 93006–93006. 11 indexed citations
9.
10.
Upadhyay, Abhishek, et al.. (2022). Recent progress on negative capacitance tunnel FET for low-power applications: Device perspective. Microelectronics Journal. 129. 105583–105583. 25 indexed citations
11.
Nanda, Umakanta, et al.. (2022). Development of an analytical model of work function modulated GAA MOSFET for electrostatic performance analysis. Physica Scripta. 97(2). 24007–24007. 3 indexed citations
12.
Tayal, Shubham, Sresta Valasa, Sandip Bhattacharya, et al.. (2022). Investigation of Nanosheet-FET Based Logic Gates at Sub-7 nm Technology Node for Digital IC Applications. Silicon. 14(18). 12261–12267. 21 indexed citations
13.
Tayal, Shubham, Abhishek Upadhyay, Deepak Kumar, & Shiromani Balmukund Rahi. (2022). Emerging Low-Power Semiconductor Devices. 3 indexed citations
14.
Thoutam, Laxman Raju, Shubham Tayal, & J. Ajayan. (2022). Emerging Materials. 4 indexed citations
15.
Ajayan, J., et al.. (2022). A Critical Review on Reliability and Short Circuit Robustness of Silicon Carbide Power MOSFETs. Silicon. 15(2). 623–637. 8 indexed citations
16.
Ajayan, J., D. Nirmal, Shubham Tayal, et al.. (2021). Nanosheet field effect transistors-A next generation device to keep Moore's law alive: An intensive study. Microelectronics Journal. 114. 105141–105141. 77 indexed citations
17.
Tayal, Shubham, et al.. (2021). Conventional vs. junctionless gate-stack DG-MOSFET based CMOS inverter. International journal of nanodimension.. 12(2). 98–103. 5 indexed citations
18.
Tayal, Shubham, et al.. (2020). Channel thickness dependency of high-k gate dielectric based double-gate CMOS inverter. International journal of nanodimension.. 11(3). 215–221. 5 indexed citations
19.
20.
Tayal, Shubham & Ashutosh Nandi. (2018). Performance analysis of junctionless DG‐MOSFET‐based 6T‐SRAM with gate‐stack configuration. Micro & Nano Letters. 13(6). 838–841. 9 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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