D. Nirmal

3.6k total citations
155 papers, 2.6k citations indexed

About

D. Nirmal is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, D. Nirmal has authored 155 papers receiving a total of 2.6k indexed citations (citations by other indexed papers that have themselves been cited), including 132 papers in Electrical and Electronic Engineering, 79 papers in Condensed Matter Physics and 38 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in D. Nirmal's work include GaN-based semiconductor devices and materials (79 papers), Semiconductor materials and devices (76 papers) and Advancements in Semiconductor Devices and Circuit Design (50 papers). D. Nirmal is often cited by papers focused on GaN-based semiconductor devices and materials (79 papers), Semiconductor materials and devices (76 papers) and Advancements in Semiconductor Devices and Circuit Design (50 papers). D. Nirmal collaborates with scholars based in India, United Kingdom and United States. D. Nirmal's co-authors include J. Ajayan, A.S. Augustine Fletcher, L. Arivazhagan, P. Prajoon, J. Charles Pravin, P. Mohankumar, Sandip Bhattacharya, M. Saravanan, P. Vijayakumar and Shubham Tayal and has published in prestigious journals such as SHILAP Revista de lepidopterología, IEEE Access and Journal of Materials Science.

In The Last Decade

D. Nirmal

146 papers receiving 2.4k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
D. Nirmal India 27 2.0k 1.1k 498 451 450 155 2.6k
Shawn S. H. Hsu Taiwan 24 2.1k 1.0× 617 0.6× 338 0.7× 190 0.4× 291 0.6× 184 2.3k
Yuehang Xu China 24 1.7k 0.8× 874 0.8× 414 0.8× 308 0.7× 254 0.6× 206 2.0k
Ruimin Xu China 25 1.7k 0.9× 752 0.7× 422 0.8× 234 0.5× 381 0.8× 192 2.2k
Yilong Hao China 24 1.2k 0.6× 952 0.9× 411 0.8× 215 0.5× 529 1.2× 104 1.6k
Yan‐Kuin Su Taiwan 22 1.3k 0.6× 466 0.4× 322 0.6× 630 1.4× 394 0.9× 199 1.8k
Mina Rais‐Zadeh United States 26 1.6k 0.8× 406 0.4× 850 1.7× 521 1.2× 176 0.4× 131 2.3k
Wouter Ruythooren Belgium 23 1.4k 0.7× 381 0.4× 263 0.5× 247 0.5× 349 0.8× 66 1.6k
Chun‐Yen Chang Taiwan 21 1.5k 0.7× 485 0.4× 615 1.2× 431 1.0× 264 0.6× 174 1.8k
Swaroop Ganguly India 17 1.4k 0.7× 526 0.5× 349 0.7× 315 0.7× 401 0.9× 156 2.1k
Masahiro Horibe Japan 20 872 0.4× 267 0.2× 253 0.5× 455 1.0× 168 0.4× 167 1.4k

Countries citing papers authored by D. Nirmal

Since Specialization
Citations

This map shows the geographic impact of D. Nirmal's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. Nirmal with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. Nirmal more than expected).

Fields of papers citing papers by D. Nirmal

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. Nirmal. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. Nirmal. The network helps show where D. Nirmal may publish in the future.

Co-authorship network of co-authors of D. Nirmal

This figure shows the co-authorship network connecting the top 25 collaborators of D. Nirmal. A scholar is included among the top collaborators of D. Nirmal based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with D. Nirmal. D. Nirmal is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Akshaykranth, A., J. Ajayan, Sandip Bhattacharya, et al.. (2025). Aggressively scaled T-Gated GaN-on-silicon RF power HEMT featuring step graded SRL-AlGaN buffer for next generation broad band power amplifiers. Results in Engineering. 25. 104151–104151. 4 indexed citations
2.
Nirmal, D., et al.. (2025). Nanosheet transistors: materials, devices, systems and applications. Journal of Materials Science. 60(16). 6769–6806.
3.
Prajoon, P., et al.. (2024). Revolutionizing Fe doped back barrier AlGaN/GaN HEMTs: Unveiling the remarkable 1700V breakdown voltage milestone. Microelectronics Journal. 147. 106158–106158. 5 indexed citations
4.
Ajayan, J., et al.. (2024). A new Vertical C-shaped Silicon Channel Nanosheet FET with Stacked High-K Dielectrics for Low Power Applications. Silicon. 16(6). 2659–2670. 3 indexed citations
5.
Kasthuri, N., et al.. (2024). TMD material investigation for a low hysteresis vdW NCFET logic transistor. Semiconductor Science and Technology. 39(4). 45005–45005. 1 indexed citations
6.
Ajayan, J., et al.. (2024). LG = 50 nm T-gated and Fe-doped double quantum well GaN‒HEMT on SiC wafer with graded AlGaN barrier for future power electronics applications. Journal of Science Advanced Materials and Devices. 9(4). 100795–100795. 1 indexed citations
7.
Paul, D., et al.. (2024). Optimizing deposition parameters and characterizing TiO2 thin films for future memristor applications. Physica Scripta. 99(11). 115929–115929. 2 indexed citations
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Prajoon, P., et al.. (2023). Investigation of variable field plate length in GaN HEMT on SiC substrate for MMIC applications. Microelectronics Journal. 138. 105866–105866. 5 indexed citations
12.
Ajayan, J., P. Mohankumar, Ribu Mathew, et al.. (2023). Organic Electrochemical Transistors (OECTs): Advancements and Exciting Prospects for Future Biosensing Applications. IEEE Transactions on Electron Devices. 70(7). 3401–3412. 9 indexed citations
13.
Ajayan, J., P. Mohankumar, D. Nirmal, et al.. (2023). Ferroelectric Field Effect Transistors (FeFETs): Advancements, challenges and exciting prospects for next generation Non-Volatile Memory (NVM) applications. Materials Today Communications. 35. 105591–105591. 24 indexed citations
14.
Benjamin, Michael, et al.. (2023). A review on applications of molybdenum disulfide material: Recent developments. Micro and Nanostructures. 186. 207742–207742. 14 indexed citations
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Samuel, T. S. Arun, et al.. (2021). Performance Analysis of HfO2-SiO2 Stacked Oxide Quadruple Gate Tunnel Field Effect Transistor for Improved ON Current. Silicon. 14(11). 6003–6008. 3 indexed citations
17.
Ajayan, J., D. Nirmal, Shubham Tayal, et al.. (2021). Nanosheet field effect transistors-A next generation device to keep Moore's law alive: An intensive study. Microelectronics Journal. 114. 105141–105141. 77 indexed citations
18.
Murugapandiyan, P., et al.. (2020). Breakdown voltage enhancement of gate field plate Al0.295Ga0.705N/GaN HEMTs. International Journal of Electronics. 108(8). 1273–1287. 8 indexed citations
19.
Nirmal, D., et al.. (2018). A Study on the use of Spectroscopic Techniques to Identify Food Adulteration. 1–6. 7 indexed citations
20.
Nirmal, D., et al.. (2016). Green InGaN/GaN LEDs with p-GaN interlayer for efficiency droop improvement. 216–219. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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