A. Mohanbabu

493 total citations
27 papers, 319 citations indexed

About

A. Mohanbabu is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, A. Mohanbabu has authored 27 papers receiving a total of 319 indexed citations (citations by other indexed papers that have themselves been cited), including 22 papers in Condensed Matter Physics, 18 papers in Electrical and Electronic Engineering and 15 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in A. Mohanbabu's work include GaN-based semiconductor devices and materials (22 papers), Ga2O3 and related materials (15 papers) and Semiconductor Quantum Structures and Devices (12 papers). A. Mohanbabu is often cited by papers focused on GaN-based semiconductor devices and materials (22 papers), Ga2O3 and related materials (15 papers) and Semiconductor Quantum Structures and Devices (12 papers). A. Mohanbabu collaborates with scholars based in India, United States and Bulgaria. A. Mohanbabu's co-authors include N. Mohankumar, Partha Sarkar, Samar K. Saha, P. Murugapandiyan, Chandan Kumar Sarkar, A.S. Augustine Fletcher, Sanjoy Deb, Arathy Varghese, V. N. Ramakrishnan and S. Ravi and has published in prestigious journals such as Journal of Materials Science, Solid-State Electronics and Journal of Electronic Materials.

In The Last Decade

A. Mohanbabu

23 papers receiving 283 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
A. Mohanbabu India 12 257 248 102 95 40 27 319
Joachim Wuerfl Germany 10 370 1.4× 379 1.5× 158 1.5× 80 0.8× 72 1.8× 23 466
Manyam Pilla United States 9 337 1.3× 291 1.2× 166 1.6× 95 1.0× 58 1.4× 10 384
Uthayasankaran Peralagu Belgium 9 229 0.9× 229 0.9× 66 0.6× 84 0.9× 40 1.0× 50 284
Yoshitomo Hatakeyama Japan 7 340 1.3× 291 1.2× 154 1.5× 72 0.8× 40 1.0× 9 356
Yen-Ku Lin Taiwan 11 161 0.6× 205 0.8× 79 0.8× 97 1.0× 70 1.8× 19 324
Fabio Alessio Marino Italy 10 319 1.2× 317 1.3× 111 1.1× 103 1.1× 53 1.3× 22 394
D. Mahaveer Sathaiya Taiwan 7 221 0.9× 236 1.0× 80 0.8× 96 1.0× 51 1.3× 13 296
Geetak Gupta United States 11 231 0.9× 216 0.9× 100 1.0× 91 1.0× 67 1.7× 25 290
Zhaoke Bian China 11 319 1.2× 321 1.3× 182 1.8× 96 1.0× 51 1.3× 16 400
Akihisa Terano Japan 10 284 1.1× 279 1.1× 127 1.2× 98 1.0× 48 1.2× 28 348

Countries citing papers authored by A. Mohanbabu

Since Specialization
Citations

This map shows the geographic impact of A. Mohanbabu's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Mohanbabu with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Mohanbabu more than expected).

Fields of papers citing papers by A. Mohanbabu

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Mohanbabu. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Mohanbabu. The network helps show where A. Mohanbabu may publish in the future.

Co-authorship network of co-authors of A. Mohanbabu

This figure shows the co-authorship network connecting the top 25 collaborators of A. Mohanbabu. A scholar is included among the top collaborators of A. Mohanbabu based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. Mohanbabu. A. Mohanbabu is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Ravi, S., et al.. (2025). Lattice-matched InAlN/GaN high-electron-mobility transistors (HEMTs). Journal of Materials Science. 60(30). 12607–12661.
2.
Murugapandiyan, P., et al.. (2024). Comparative Study of AlGaN/InGaN/β-Ga2O3 and InAlN/InGaN/β-Ga2O3 HEMTs for Enhanced RF Linearity. Journal of Electronic Materials. 54(3). 2340–2354. 6 indexed citations
3.
Murugapandiyan, P., et al.. (2024). Investigation of different buffer layer impact on AlN/GaN/AlGaN HEMT using silicon carbide substrate for high-speed RF applications. Micro and Nanostructures. 189. 207815–207815. 9 indexed citations
4.
Murugapandiyan, P., et al.. (2023). High performance enhancement mode GaN HEMTs using β-Ga2O3 buffer for power switching and high frequency applications: A simulation study. Microelectronics Journal. 140. 105946–105946. 18 indexed citations
5.
6.
Kumar, Nitish, et al.. (2022). Performance Analysis of FinFET based Ternary Inverter. 1–6.
7.
Mohanbabu, A., et al.. (2022). Noise characterisation of GaN current aperture vertical electron transistor metal‐insulated semiconductor field effect transistor with Δ‐shaped gate for low noise radio frequency amplifiers. International Journal of RF and Microwave Computer-Aided Engineering. 32(11). 4 indexed citations
8.
Deb, Sanjoy, et al.. (2021). The impact of a recessed Δ-shaped gate in a vertical CAVET AlGaN/GaN MIS-HEMT for high-power low-loss switching applications. Journal of Computational Electronics. 21(1). 169–180. 16 indexed citations
9.
Murugapandiyan, P., et al.. (2020). Performance analysis of HfO2/InAlN/AlN/GaN HEMT with AlN buffer layer for high power microwave applications. Journal of Science Advanced Materials and Devices. 5(2). 192–198. 23 indexed citations
10.
Murugapandiyan, P., et al.. (2019). Investigation of Quaternary Barrier InAlGaN/GaN/AlGaN Double-Heterojunction High-Electron-Mobility Transistors (HEMTs) for High-Speed and High-Power Applications. Journal of Electronic Materials. 49(1). 524–529. 12 indexed citations
11.
Mohanbabu, A., et al.. (2017). DC, RF and noise figure analysis of p + In0.2Ga0.8N cap gate AlGaN DH-HEMT. 708–710. 1 indexed citations
12.
Mohanbabu, A., et al.. (2017). Comparative assessment of InGaAs sub-channel and InAs composite channel double gate (DG)-HEMT for sub-millimeter wave applications. AEU - International Journal of Electronics and Communications. 83. 462–469. 14 indexed citations
13.
Mohanbabu, A., et al.. (2017). Efficient III-Nitride MIS-HEMT devices with high-κ gate dielectric for high-power switching boost converter circuits. Superlattices and Microstructures. 103. 270–284. 50 indexed citations
14.
Mohanbabu, A., et al.. (2017). Simulation of InGaAs subchannel DG-HEMTs for analogue/RF applications. International Journal of Electronics. 1–11. 11 indexed citations
15.
Mohanbabu, A., et al.. (2017). Investigation of enhancement mode HfO2 insulated N-polarity GaN/InN/GaN/In0.9Al0.1N heterostructure MISHEMT for high-frequency applications. Physica E Low-dimensional Systems and Nanostructures. 92. 23–29. 18 indexed citations
16.
Mohanbabu, A., et al.. (2017). Device characteristics of enhancement mode double heterostructure DH‐HEMT with boron‐doped GaN gate cap layer for full‐bridge inverter circuit. International Journal of Numerical Modelling Electronic Networks Devices and Fields. 31(3). 19 indexed citations
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19.
Mohanbabu, A., et al.. (2017). Investigation of performance of InAsSb based high electron mobility transistors (HEMTs). 699–701. 1 indexed citations
20.
Mohanbabu, A., et al.. (2013). Modeling of sheet carrier density and microwave frequency characteristics in Spacer based AlGaN/AlN/GaN HEMT devices. Solid-State Electronics. 91. 44–52. 31 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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