N. Nagel

940 total citations
45 papers, 649 citations indexed

About

N. Nagel is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Biomedical Engineering. According to data from OpenAlex, N. Nagel has authored 45 papers receiving a total of 649 indexed citations (citations by other indexed papers that have themselves been cited), including 38 papers in Electrical and Electronic Engineering, 21 papers in Materials Chemistry and 10 papers in Biomedical Engineering. Recurrent topics in N. Nagel's work include Semiconductor materials and devices (20 papers), Advanced Memory and Neural Computing (15 papers) and Ferroelectric and Piezoelectric Materials (14 papers). N. Nagel is often cited by papers focused on Semiconductor materials and devices (20 papers), Advanced Memory and Neural Computing (15 papers) and Ferroelectric and Piezoelectric Materials (14 papers). N. Nagel collaborates with scholars based in Germany, Japan and United States. N. Nagel's co-authors include C. Dehm, Thomas Mikolajick, Walter Hartner, I. Kasko, C. Mazuré, Markus Kastner, Ralf Kunkel, G. Comsa, Bene Poelsema and Laurens K. Verheij and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Journal of Solid-State Circuits.

In The Last Decade

N. Nagel

42 papers receiving 625 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
N. Nagel Germany 14 415 345 166 142 97 45 649
W. M. Tong United States 8 347 0.8× 121 0.4× 122 0.7× 198 1.4× 89 0.9× 10 584
M. S. Leung United States 16 283 0.7× 242 0.7× 206 1.2× 133 0.9× 61 0.6× 62 653
A. C. Dürr Germany 12 754 1.8× 290 0.8× 272 1.6× 168 1.2× 50 0.5× 20 907
Adam Bushmaker United States 15 260 0.6× 562 1.6× 262 1.6× 292 2.1× 39 0.4× 38 818
Mariama Rebello Sousa Dias United States 12 247 0.6× 182 0.5× 140 0.8× 127 0.9× 107 1.1× 23 459
S. S. Kosolobov Russia 14 211 0.5× 244 0.7× 202 1.2× 195 1.4× 121 1.2× 63 607
Thierry Mélin France 16 353 0.9× 286 0.8× 460 2.8× 219 1.5× 50 0.5× 55 735
C. J. Hitzman United States 9 503 1.2× 140 0.4× 242 1.5× 112 0.8× 50 0.5× 22 607
Jong Duk Lee South Korea 16 836 2.0× 500 1.4× 115 0.7× 111 0.8× 46 0.5× 91 1.0k
G. B. Parravicini Italy 13 236 0.6× 480 1.4× 321 1.9× 95 0.7× 104 1.1× 30 836

Countries citing papers authored by N. Nagel

Since Specialization
Citations

This map shows the geographic impact of N. Nagel's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by N. Nagel with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites N. Nagel more than expected).

Fields of papers citing papers by N. Nagel

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by N. Nagel. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by N. Nagel. The network helps show where N. Nagel may publish in the future.

Co-authorship network of co-authors of N. Nagel

This figure shows the co-authorship network connecting the top 25 collaborators of N. Nagel. A scholar is included among the top collaborators of N. Nagel based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with N. Nagel. N. Nagel is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Bishop, Charles A., Apurba Das, Jianwei Ding, et al.. (2024). Long-distance signal propagation in AC-LGAD. Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment. 1064. 169478–169478. 1 indexed citations
2.
Nagel, N., et al.. (2008). MAC Layer Misbehavior on Ad Hoc Networks. 2. 538–542. 2 indexed citations
3.
Mikolajick, Thomas, Michael Specht, N. Nagel, et al.. (2007). The Future of Charge Trapping Memories. 21. 1–4. 8 indexed citations
4.
Ludwig, C., et al.. (2006). Future trends in charge trapping memories. 740–743. 2 indexed citations
5.
Bräuhaus, D., U. Böttger, Rainer Waser, et al.. (2006). Fatigue effect in ferroelectric PbZr1−xTixO3 thin films. Journal of Applied Physics. 99(11). 36 indexed citations
6.
Schindler, G., Thomas Mikolajick, N. Nagel, et al.. (2005). Influence of the morphology of ferroelectric SrBi2Ta2O9 thin films deposited by metal organic decomposition on its electrical characteristics. Applied Surface Science. 249(1-4). 23–30. 15 indexed citations
7.
Müller, Georg, et al.. (2005). Status and outlook of emerging nonvolatile memory technologies. 567–570. 38 indexed citations
8.
Nagel, N., D. Olligs, S. Parascandola, et al.. (2005). Highly scalable 90nm STI bounded twin flash cell with local interconnect. 120–121. 2 indexed citations
9.
Nagel, N., et al.. (2004). New highly scalable 3 dimensional chain FeRAM cell with vertical capacitor. 146–147. 6 indexed citations
10.
Moon, Byung Kee, R. Bruchhaus, Kaori Tsutsumi, et al.. (2003). Characteristics of an Oxygen Barrier Based on Bi-layered Ir. Integrated ferroelectrics. 53(1). 279–286. 1 indexed citations
11.
Moon, Bum Ki, C. U. Pinnow, Keitaro Imai, et al.. (2002). Oxygen Diffusion Barriers for High-Density FeRAMs. Integrated ferroelectrics. 47(1). 79–88. 1 indexed citations
12.
Nagel, N. & I. Kunishima. (2002). Key Technologies for High Density FeRAM Applications. Integrated ferroelectrics. 48(1). 127–137. 4 indexed citations
13.
Nagel, N., G. Costrini, Satish D. Athavale, et al.. (2001). Three dimensional (BA, SR) TIO 3 stack capacitors for dram application. Integrated ferroelectrics. 38(1-4). 259–267. 5 indexed citations
14.
Mikolajick, Thomas, C. Dehm, Walter Hartner, et al.. (2001). FeRAM technology for high density applications. Microelectronics Reliability. 41(7). 947–950. 130 indexed citations
15.
Beitel, G., H. Wendt, E. Fritsch, et al.. (1999). A novel low-temperature (Ba,Sr)TiO3 (BST) process with barrier for Gbit DRAM applications. Microelectronic Engineering. 48(1-4). 299–302. 9 indexed citations
16.
Grossmann, M., O. Lohse, D. Bolten, et al.. (1998). Origin of Imprint in Ferroelectric CSD SrBi2Ta2O9 Thin Films. MRS Proceedings. 541. 13 indexed citations
17.
Silier, I., A. Gutjahr, N. Nagel, et al.. (1996). Solution growth of epitaxial semiconductor-on-insulator layers. Journal of Crystal Growth. 166(1-4). 727–730. 4 indexed citations
18.
Ami, T., N. Nagel, Masataka Sugiyama, et al.. (1995). Preparation and Properties of ferroelectric Bi2SrTa2O9 thin films for FeRAM using Flash-MOCVD. MRS Proceedings. 415. 38 indexed citations
19.
Nagel, N., et al.. (1992). First MOS transistors on insulator by silicon saturated liquid solution epitaxy. IEEE Electron Device Letters. 13(5). 294–296. 6 indexed citations
20.
Zimmermann, Heiko, R. Boyn, & N. Nagel. (1983). Photoinduced absorption spectra of ZnS:Fe crystals. physica status solidi (b). 117(1). 229–239. 16 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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