W. Hönlein

1.0k citations

21 papers · 731 indexed · h-index 10

Impact in

Materials Chemistry top 10%
- Carbon Nanotubes in Composites
- Graphene research and applications
- Silicon Nanostructures and Photoluminescence
- Ferroelectric and Piezoelectric Materials
- Diamond and Carbon-based Materials Research
Electrical and Electronic Engineering top 10%
- Semiconductor materials and devices
- Low-power high-performance VLSI design

Papers in ⓘ

Electronic, Optical and Magnetic Materials 5
- Copper Interconnects and Reliability 3
- Multiferroics and related materials 2
Electrical and Electronic Engineering 15
- Semiconductor materials and devices 12
- Advancements in Semiconductor Devices and Circuit Design 3
- 3D IC and TSV technologies 2

Co-authors: E. Unger (3 shared papers)Franz Kreupl (3 shared papers)M. Liebau (3 shared papers)Anthony Graham (3 shared papers)Georg S. Duesberg (3 shared papers)W. Steinhögl (2 shared papers)H. Reisinger (3 shared papers)H. Wendt (3 shared papers)
Journals: Integrated ferroelectrics (3 papers)Surface Science (3 papers)Microelectronic Engineering (2 papers)Applied Surface Science (1 paper)Diamond and Related Materials (1 paper)
Partner nations: Germany United States France

In The Last Decade

W. Hönlein

21 papers receiving 704 citations

Peers

Countries citing papers authored by W. Hönlein

Since Specialization

Citations

This map shows the geographic impact of W. Hönlein's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by W. Hönlein with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites W. Hönlein more than expected).

Fields of papers citing papers by W. Hönlein

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by W. Hönlein. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by W. Hönlein. The network helps show where W. Hönlein may publish in the future.

Co-authors

The 25 scholars most cited alongside W. Hönlein, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with W. Hönlein Line = papers co-authored together W. Hönlein links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 21 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Carbon nanotubes in interconnect applications Microelectronic Engineering ·Franz Kreupl, Anthony Graham, Georg S. Duesberg, W. Steinhögl, M. Liebau, E. Unger, W. Hönlein	2002	440
2	A novel capacitor technology based on porous silicon Thin Solid Films ·V. Lehmann, W. Hönlein, H. Reisinger, A. Spitzer, H. Wendt, J. Willer	1996	77
3	Towards the integration of carbon nanotubes in microelectronics Diamond and Related Materials ·Anthony Graham, Georg S. Duesberg, Robert Seidel, M. Liebau, E. Unger, Franz Kreupl, W. Hönlein	2004	62
4	Ferroelectric strontium bismuth tantalate thin films deposited by metalorganic chemical vapour deposition (MOCVD) Journal of the European Ceramic Society ·Jeffrey F. Roeder, B. C. Hendrix, Frank Hintermaier, Debra A. Desrochers, T. H. Baum, Ghadendra Bhandari, M Chappuis, Peter C. Van Buskirk, C. Dehm, E. Fritsch, N. Nagel, H. Wendt, H. Cerva, W. Hönlein, C. Mazuré	1999	31
5	ONO technology Applied Surface Science ·W. Hönlein, H. Reisinger	1989	18
6	Properties of SrBi₂Ta₂O₉ thin films grown by MOCVD for high density FeRAM applications Integrated ferroelectrics ·Frank Hintermaier, B. C. Hendrix, Debra A. Desrochers, Jeffrey F. Roeder, Thomas H. Baum, Peter Van Buskirk, Dirk Bolten, Michael Grossmann, O. Lohse, Marcus Schumacher, Rainer Waser, H. Cerva, C. Dehm, E. Fritsch, W. Hönlein, C. Mazuré, Nicolas Nagel, Peter Thwaite, Hermann Wendt	1998	16
7	Energy loss of warm electrons at the interface of (100) silicon MOSFETS Surface Science ·W. Hönlein, G. Landwehr	1982	14
8	Thickness determination of thin SiO2 on silicon Solid-State Electronics ·H. Reisinger, H. Oppolzer, W. Hönlein	1992	11
9	CARBON NANOTUBES IN MICROELECTRONIC APPLICATIONS Franz Kreupl, Georg S. Duesberg, Anthony Graham, M. Liebau, E. Unger, Robert Seidel, W. Pamler, W. Hönlein	2003	9
10	A novel low-temperature (Ba,Sr)TiO3 (BST) process with barrier for Gbit DRAM applications Microelectronic Engineering ·G. Beitel, H. Wendt, E. Fritsch, Volker Weinrich, M. Engelhardt, B. Hasler, T. Röhr, Robert Bergmann, U. Scheler, K.-H. Malek, N. Nagel, A. Gschwandtner, W. Pamler, W. Hönlein, C. Dehm, C. Mazuré	1999	9
11	MOCVD of SrBi₂Ta₂O₉ for Integrated Ferroelectric Capacitors MRS Proceedings ·B. C. Hendrix, Frank Hintermaier, Debra A. Desrocherst, Jeffrey F. Roedert, Gautam Bhandarit, Maggie Chappuist, Thomas H. Baumt, Peter C. Van Buskirkt, C. Dehm, E. Fritsch, Nikolas Nagel, W. Hönlein, C. Mazuré	1997	9
12	Impact of Annealing on the Resistivity of Ultrafine Cu Damascene Interconnects MRS Proceedings ·G. Steinlesberger, M. Engelhardt, G. Schindler, W. Steinhögl, M. Traving, W. Hönlein, E. Bertagnolli	2003	7
13	Copper damascene interconnects for the 65 nm technology node: a first look at the reliability properties G. Steinlesberger, A. von Glasow, M. Engelhardt, G. Schindler, W. Hönlein, Mathias Holz, E. Bertagnolli	2003	6
14	Correlations Between Composition, Texture, and Polarization in Sr_xBi_yTa₂O_5+x+3y/2 Thin Films Deposited by MOCVD MRS Proceedings ·B. C. Hendrix, Frank Hintermaieri, Debra A. Desrochers, Jeffrey F. Roeder, Thomas H. Baum, C. Dehm, Nikolas Nagel, W. Hönlein, C. Mazuré	1998	5
15	Technology challenges and solutions for 1Gbit and beyond Integrated ferroelectrics ·C. Mazuré, J. Alsmeier, C. Dehm, W. Hönlein	1998	5
16	Energy relaxation of warm electrons in (100)-Si-MOSFETs under substrate bias Solid State Communications ·W. Hönlein, G. Landwehr	1984	3
17	Negative magnetoresistance of (100) n-Si mosfets under substrate bias Surface Science ·W. Hönlein, G. Landwehr	1984	3
18	Neue Dielektrika für Gbit‐Speicherchips Physikalische Blätter ·W. Hönlein	1999	2
19	Energy loss of warm electrons at the interface of (100) silicon MOSFETs Surface Science Letters ·W. Hönlein, G. Landwehr	1982	2
20	Optimization of Pt/SBT/CeO₂/Si(100) gate stacks for low voltage ferroelectric field effect devices Integrated ferroelectrics ·T. Haneder, W. Hönlein, Harald Bachhofer, H. von Philipsborn, Rainer Waser	2001	1

About W. Hönlein

W. Hönlein is a scholar working on Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, Materials Chemistry, Surfaces, Coatings and Films and Atomic and Molecular Physics, and Optics, having authored 21 papers that have together received 731 indexed citations. Recurring topics across this work include Semiconductor materials and devices (12 papers), Ferroelectric and Piezoelectric Materials (5 papers), Copper Interconnects and Reliability (3 papers), Silicon Nanostructures and Photoluminescence (3 papers), Advancements in Semiconductor Devices and Circuit Design (3 papers), Acoustic Wave Resonator Technologies (2 papers), Multiferroics and related materials (2 papers) and 3D IC and TSV technologies (2 papers). The work is most often cited by research in Materials Chemistry (608 citations), Electrical and Electronic Engineering (351 citations), Biomedical Engineering (227 citations), Atomic and Molecular Physics, and Optics (117 citations) and Electronic, Optical and Magnetic Materials (63 citations). W. Hönlein has collaborated with scholars based in Germany, United States and France. Frequent co-authors include E. Unger, Franz Kreupl, M. Liebau, Anthony Graham, Georg S. Duesberg, W. Steinhögl, H. Reisinger, H. Wendt, A. Spitzer and V. Lehmann. Their work appears in journals such as Integrated ferroelectrics, Surface Science, Microelectronic Engineering, Applied Surface Science and Diamond and Related Materials.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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