W. Hönlein

1.0k total citations
21 papers, 731 citations indexed

About

W. Hönlein is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, W. Hönlein has authored 21 papers receiving a total of 731 indexed citations (citations by other indexed papers that have themselves been cited), including 15 papers in Electrical and Electronic Engineering, 10 papers in Materials Chemistry and 5 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in W. Hönlein's work include Semiconductor materials and devices (12 papers), Ferroelectric and Piezoelectric Materials (5 papers) and Copper Interconnects and Reliability (3 papers). W. Hönlein is often cited by papers focused on Semiconductor materials and devices (12 papers), Ferroelectric and Piezoelectric Materials (5 papers) and Copper Interconnects and Reliability (3 papers). W. Hönlein collaborates with scholars based in Germany, United States and Austria. W. Hönlein's co-authors include Georg S. Duesberg, E. Unger, Anthony Graham, M. Liebau, Franz Kreupl, W. Steinhögl, H. Reisinger, H. Wendt, A. Spitzer and V. Lehmann and has published in prestigious journals such as Applied Surface Science, Surface Science and Thin Solid Films.

In The Last Decade

W. Hönlein

21 papers receiving 704 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
W. Hönlein Germany	10	608	351	227	117	63	21	731
Yuchi Che United States	13	560 0.9×	330 0.9×	280 1.2×	118 1.0×	43 0.7×	17	716
M. J. Yun South Korea	5	444 0.7×	132 0.4×	179 0.8×	85 0.7×	42 0.7×	5	501
Won Chel Choi South Korea	13	480 0.8×	289 0.8×	116 0.5×	65 0.6×	79 1.3×	35	562
J.H. You South Korea	8	448 0.7×	131 0.4×	188 0.8×	97 0.8×	32 0.5×	18	514
Shadi Sabri United States	14	647 1.1×	701 2.0×	262 1.2×	135 1.2×	82 1.3×	28	1.0k
Niclas Lindvall Sweden	13	633 1.0×	312 0.9×	247 1.1×	111 0.9×	76 1.2×	26	717
Sylvie Schamm‐Chardon France	14	438 0.7×	409 1.2×	166 0.7×	102 0.9×	86 1.4×	50	603
M Miyasaka Japan	11	287 0.5×	514 1.5×	168 0.7×	45 0.4×	24 0.4×	19	617
Gwanghyun Ahn South Korea	6	932 1.5×	373 1.1×	326 1.4×	130 1.1×	125 2.0×	7	1.0k
Vikram Passi Germany	12	477 0.8×	417 1.2×	301 1.3×	162 1.4×	42 0.7×	33	686

Countries citing papers authored by W. Hönlein

Since Specialization

Citations

This map shows the geographic impact of W. Hönlein's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by W. Hönlein with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites W. Hönlein more than expected).

Fields of papers citing papers by W. Hönlein

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by W. Hönlein. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by W. Hönlein. The network helps show where W. Hönlein may publish in the future.

Co-authorship network of co-authors of W. Hönlein

This figure shows the co-authorship network connecting the top 25 collaborators of W. Hönlein. A scholar is included among the top collaborators of W. Hönlein based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with W. Hönlein. W. Hönlein is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Graham, Anthony, Georg S. Duesberg, Robert Seidel, et al.. (2004). Towards the integration of carbon nanotubes in microelectronics. Diamond and Related Materials. 13(4-8). 1296–1300. 62 indexed citations

Kreupl, Franz, Georg S. Duesberg, Anthony Graham, et al.. (2003). CARBON NANOTUBES IN MICROELECTRONIC APPLICATIONS. 525–532. 9 indexed citations

Steinlesberger, G., M. Engelhardt, G. Schindler, et al.. (2003). Impact of Annealing on the Resistivity of Ultrafine Cu Damascene Interconnects. MRS Proceedings. 766. 7 indexed citations

Kreupl, Franz, Anthony Graham, Georg S. Duesberg, et al.. (2002). Carbon nanotubes in interconnect applications. Microelectronic Engineering. 64(1-4). 399–408. 440 indexed citations

Hönlein, W., et al.. (2001). Optimization of Pt/SBT/CeO₂/Si(100) gate stacks for low voltage ferroelectric field effect devices. Integrated ferroelectrics. 34(1-4). 47–54. 1 indexed citations

Hönlein, W.. (1999). Neue Dielektrika für Gbit‐Speicherchips. Physikalische Blätter. 55(2). 51–53. 2 indexed citations

Beitel, G., H. Wendt, E. Fritsch, et al.. (1999). A novel low-temperature (Ba,Sr)TiO3 (BST) process with barrier for Gbit DRAM applications. Microelectronic Engineering. 48(1-4). 299–302. 9 indexed citations

Roeder, Jeffrey F., B. C. Hendrix, T. H. Baum, et al.. (1999). Ferroelectric strontium bismuth tantalate thin films deposited by metalorganic chemical vapour deposition (MOCVD). Journal of the European Ceramic Society. 19(6-7). 1463–1466. 31 indexed citations

Hendrix, B. C., Jeffrey F. Roeder, Thomas H. Baum, et al.. (1998). Correlations Between Composition, Texture, and Polarization in Sr_xBi_yTa₂O_5+x+3y/2 Thin Films Deposited by MOCVD. MRS Proceedings. 541. 5 indexed citations

10.

Mazuré, C., et al.. (1998). Technology challenges and solutions for 1Gbit and beyond. Integrated ferroelectrics. 21(1-4). 15–25. 5 indexed citations

11.

Hendrix, B. C., Jeffrey F. Roeder, Thomas H. Baum, et al.. (1998). Properties of SrBi₂Ta₂O₉ thin films grown by MOCVD for high density FeRAM applications. Integrated ferroelectrics. 21(1-4). 367–379. 16 indexed citations

12.

Hendrix, B. C., et al.. (1997). MOCVD of SrBi₂Ta₂O₉ for Integrated Ferroelectric Capacitors. MRS Proceedings. 493. 9 indexed citations

13.

Lehmann, V., et al.. (1996). A novel capacitor technology based on porous silicon. Thin Solid Films. 276(1-2). 138–142. 77 indexed citations

14.

Reisinger, H., H. Oppolzer, & W. Hönlein. (1992). Thickness determination of thin SiO2 on silicon. Solid-State Electronics. 35(6). 797–803. 11 indexed citations

15.

Hönlein, W. & H. Reisinger. (1989). ONO technology. Applied Surface Science. 39(1-4). 178–191. 18 indexed citations

16.

Hönlein, W. & G. Landwehr. (1984). Energy relaxation of warm electrons in (100)-Si-MOSFETs under substrate bias. Solid State Communications. 51(9). 679–683. 3 indexed citations

17.

Hönlein, W. & G. Landwehr. (1984). Negative magnetoresistance of (100) n-Si mosfets under substrate bias. Surface Science. 142(1-3). 82–85. 3 indexed citations

18.

Hönlein, W. & G. Landwehr. (1982). Energy loss of warm electrons at the interface of (100) silicon MOSFETs. Surface Science Letters. 113(1-3). A19–A20. 2 indexed citations

19.

Hönlein, W. & G. Landwehr. (1982). Energy loss of warm electrons at the interface of (100) silicon MOSFETS. Surface Science. 113(1-3). 260–266. 14 indexed citations

20.

Hönlein, W., K. von Klitzing, & G. Landwehr. (1980). Influence of the MOS surface channel on a channel-to-source contact diode characteristic. Surface Science. 98(1-3). 167–168. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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