W. Hösler

867 total citations
24 papers, 685 citations indexed

About

W. Hösler is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Computational Mechanics. According to data from OpenAlex, W. Hösler has authored 24 papers receiving a total of 685 indexed citations (citations by other indexed papers that have themselves been cited), including 11 papers in Electrical and Electronic Engineering, 9 papers in Atomic and Molecular Physics, and Optics and 7 papers in Computational Mechanics. Recurrent topics in W. Hösler's work include Semiconductor materials and devices (9 papers), Ion-surface interactions and analysis (7 papers) and Integrated Circuits and Semiconductor Failure Analysis (5 papers). W. Hösler is often cited by papers focused on Semiconductor materials and devices (9 papers), Ion-surface interactions and analysis (7 papers) and Integrated Circuits and Semiconductor Failure Analysis (5 papers). W. Hösler collaborates with scholars based in Germany, Austria and Australia. W. Hösler's co-authors include H. Riechert, R. Averbeck, E. Ritter, R. Jürgen Behm, W. Moritz, G. Binnig, W. Pamler, M. Schuster, Lutz Geelhaar and P. Pongratz and has published in prestigious journals such as Physical Review Letters, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

W. Hösler

24 papers receiving 654 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
W. Hösler Germany 13 298 268 255 220 147 24 685
R. P. Chiarello United States 12 447 1.5× 220 0.8× 206 0.8× 255 1.2× 138 0.9× 19 846
A. Rocher France 17 603 2.0× 532 2.0× 152 0.6× 302 1.4× 126 0.9× 74 917
G.-C. Wang United States 9 135 0.5× 211 0.8× 137 0.5× 247 1.1× 147 1.0× 16 608
T.J. Bullough United Kingdom 16 405 1.4× 399 1.5× 180 0.7× 234 1.1× 97 0.7× 66 677
Masaaki Yuri Japan 17 472 1.6× 485 1.8× 520 2.0× 246 1.1× 131 0.9× 66 851
K. Y. Ahn United States 18 443 1.5× 456 1.7× 222 0.9× 317 1.4× 77 0.5× 67 1000
J. Massies France 15 541 1.8× 372 1.4× 557 2.2× 350 1.6× 167 1.1× 36 964
В. Н. Бессолов Russia 14 421 1.4× 531 2.0× 246 1.0× 220 1.0× 208 1.4× 71 764
A. J. Pidduck United Kingdom 19 836 2.8× 748 2.8× 118 0.5× 334 1.5× 193 1.3× 46 1.3k
R. M. Biefeld United States 18 597 2.0× 700 2.6× 436 1.7× 360 1.6× 111 0.8× 49 1.1k

Countries citing papers authored by W. Hösler

Since Specialization
Citations

This map shows the geographic impact of W. Hösler's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by W. Hösler with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites W. Hösler more than expected).

Fields of papers citing papers by W. Hösler

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by W. Hösler. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by W. Hösler. The network helps show where W. Hösler may publish in the future.

Co-authorship network of co-authors of W. Hösler

This figure shows the co-authorship network connecting the top 25 collaborators of W. Hösler. A scholar is included among the top collaborators of W. Hösler based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with W. Hösler. W. Hösler is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Groenert, M., R. Averbeck, W. Hösler, M. Schuster, & H. Riechert. (2004). Optimized growth of BGaAs by molecular beam epitaxy. Journal of Crystal Growth. 264(1-3). 123–127. 31 indexed citations
2.
Averbeck, R., et al.. (2003). Growth diagram and morphologies of AlN thin films grown by molecular beam epitaxy. Journal of Applied Physics. 93(12). 9591–9596. 103 indexed citations
3.
Pinnow, C. U., I. Kasko, N. Nagel, et al.. (2002). Influence of deposition conditions on Ir/IrO2 oxygen barrier effectiveness. Journal of Applied Physics. 91(12). 9591–9597. 35 indexed citations
4.
5.
Franz, Gerhard, W. Hösler, & R. Treichler. (2001). Sidewall passivation of GaAs in BCl3-containing atmospheres. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 19(2). 415–419. 17 indexed citations
6.
Schuster, M., B. Jobst, W. Hösler, et al.. (1999). Determination of the chemical composition of distorted InGaN/GaN heterostructures from x-ray diffraction data. Journal of Physics D Applied Physics. 32(10A). A56–A60. 118 indexed citations
7.
Gauthier, Yves, Wolfgang Moritz, & W. Hösler. (1996). Surface alloy in the c(4 × 4) phase of Pb on Cu(100). Surface Science. 345(1-2). 53–63. 37 indexed citations
8.
Scheithauer, Uwe, et al.. (1993). Evaluation of AES depth profiles of thin‐film systems by application of novel graphically interactive factor analysis software. Surface and Interface Analysis. 20(6). 519–523. 12 indexed citations
9.
Hösler, W. & W. Pamler. (1993). Effects of crystallinity on depth resolution in sputter depth profiles. Surface and Interface Analysis. 20(8). 609–620. 18 indexed citations
10.
Hösler, W., et al.. (1991). Angle-dependent SIMS artifact in the analysis of InP/InGaAs layers. Fresenius Journal of Analytical Chemistry. 341(1-2). 43–48. 1 indexed citations
11.
Schmidt, H., K. Hradil, G. Gieres, W. Hösler, & O. Eibl. (1991). Sputtered YBa2Cu3Oy thin films on sapphire and silicon substrates using yttria stabilized ZrO2 buffer layers. Physica C Superconductivity. 180(1-4). 34–37. 3 indexed citations
12.
Hösler, W.. (1991). Surface analysis at the sidewalls of VLSI patterns—limitations and capabilities of spatially resolved Auger electron spectroscopy. Surface and Interface Analysis. 17(8). 543–550. 5 indexed citations
13.
Schmidt, H., K. Hradil, W. Hösler, et al.. (1991). Epitaxial YBa2Cu3Ox thin films on sapphire using a Y-stabilized ZrO2 buffer layer. Applied Physics Letters. 59(2). 222–224. 27 indexed citations
14.
Pamler, W., et al.. (1990). Depth resolution in Auger depth profile analysis of aluminum metallization in microelectronics: The effect of crystalline texture. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 51(1). 34–40. 49 indexed citations
15.
Hösler, W.. (1989). On sample topography and its influence on the spatial resolution of Scanning Auger Microscopy. Fresenius Zeitschrift für Analytische Chemie. 333(4-5). 315–317. 3 indexed citations
16.
Allred, David D., et al.. (1989). Film redeposition on vertical surfaces during reactive ion etching. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 7(3). 505–511. 11 indexed citations
17.
Hösler, W., R. Jürgen Behm, & E. Ritter. (1986). Defects on the Pt(100) surface and their influence on surface reactions—A scanning tunneling microscopy study. IBM Journal of Research and Development. 30(4). 403–410. 24 indexed citations
18.
Hösler, W. & W. Moritz. (1986). LEED analysis of a dense lead monolayer on copper (100). Surface Science. 175(1). 63–77. 42 indexed citations
19.
Behm, R. Jürgen, W. Hösler, E. Ritter, & G. Binnig. (1986). Correlation between domain boundaries and surface steps: A scanning-tunneling-microscopy study on reconstructed Pt(100). Physical Review Letters. 56(3). 228–231. 93 indexed citations
20.
Behm, R. Jürgen, W. Hösler, E. Ritter, & G. Binnig. (1986). Summary Abstract: The hexagonal reconstruction of Pt(100): A scanning tunneling microscopy study. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 4(3). 1330–1331. 11 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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