Max J. Schulz

1.3k citations

27 papers · 1.0k indexed · h-index 11

Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices 11
- Silicon Carbide Semiconductor Technologies 7
- Silicon and Solar Cell Technologies 5
- Thin-Film Transistor Technologies 4
Ceramics and Composites top 10%
Atomic and Molecular Physics, and Optics top 10%
- Semiconductor materials and interfaces 6
Electronic, Optical and Magnetic Materials
Materials Chemistry
Aerospace Engineering
- Infrared Target Detection Methodologies 6
- Calibration and Measurement Techniques 4
Mechanics of Materials
- Thermography and Photoacoustic Techniques 5

Co-authors: Gerhard Pensl M. Baßler V. V. Afanas’ev A. Goetzberger E. Klausmann E. Stein von Kamienski A. Stesmans Chris I. Harris
Cited by: Electrical and Electronic Engineering Ceramics and Composites Atomic and Molecular Physics, and Optics
Journals: Applied Physics Letters (4 papers)Journal of Applied Physics (2 papers)IEEE Transactions on Electron Devices (2 papers)
Partner nations: Germany Belgium United States

In The Last Decade

Max J. Schulz

25 papers receiving 977 citations

Peers

Countries citing papers authored by Max J. Schulz

Since Specialization

Citations

This map shows the geographic impact of Max J. Schulz's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Max J. Schulz with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Max J. Schulz more than expected).

Fields of papers citing papers by Max J. Schulz

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Max J. Schulz. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Max J. Schulz. The network helps show where Max J. Schulz may publish in the future.

Co-authorship network

The 25 scholars most cited alongside Max J. Schulz, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Max J. Schulz Line = papers co-authored together Max J. Schulz links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Structure and electronic properties of epitaxial fluorite-typeIrSi2on Si(001) Physical Review B ·U. Hörmann,T. Remmele,John E. Klepeis,Oleg Pankratov,Elaine Keillor,Max J. Schulz,M. Falke,Andrew Bleloch	2009	3
2	Vertical devices take off Physics World ·Max J. Schulz	2000	0
3	Shallow electron traps at the 4H–SiC/SiO2 interface Applied Physics Letters ·V. V. Afanas’ev,A. Stesmans,M. Baßler,Gerhard Pensl,Max J. Schulz	2000	116
4	The end of the road for silicon? Nature ·Max J. Schulz	1999	249
5	<title>Quality control of heat pipelines and sleeve joints by infrared measurements</title> Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·Werner Groß,Thomas Hierl,大守屋,Di Legami F,Max J. Schulz	1999	3
6	Proceedings of the 11th biennial conference on on Insulating films on semiconductors Max J. Schulz,M. Van Rossum,Rolf Brendel	1999	1
7	<title>Defect localization in CuInSe<formula><inf><roman>2</roman></inf></formula> solar modules by thermal infrared microscopy</title> Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·Werner Groß,大守屋,Dilfuza Karimova,Thomas Hierl,Max J. Schulz,W.E.J. Neal	1999	1
8	SiC/SiO 2 interface-state generation by electron injection Journal of Applied Physics ·V. V. Afanas’ev,A. Stesmans,M. Baßler,Gerhard Pensl,Max J. Schulz,C. Harris	1999	32
9	<title>Localization of methane distributions by spectrally tuned infrared imaging</title> Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·Werner Groß,Thomas Hierl,大守屋,Di Legami F,Oliver Schreer,Max J. Schulz	1999	2
10	Thermal infrared microscopy (TIM) with sub-10-μm spatial resolution Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·Thomas Hierl,Oliver Schreer,Dilfuza Karimova,Werner Groß,Max J. Schulz	1999	2
11	Ultrathin Ir 3 Si 4 silicide films for infrared detection Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·E. SCHUURMAN,Jersy Marino,Thomas Hierl,Max J. Schulz	1998	2
12	<title>Detection of gas leaks along pipelines by spectrally tuned infrared imaging</title> Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·Werner Groß,Thomas Hierl,大守屋,Di Legami F,Max J. Schulz	1998	2
13	Simplified method to calculate the band bending and the subband energies in MOS capacitors IEEE Transactions on Electron Devices ·Emeka Ngozi,Max J. Schulz	1997	29
14	Band offsets and electronic structure of SiC/SiO2 interfaces Journal of Applied Physics ·V. V. Afanas’ev,M. Baßler,Gerhard Pensl,Max J. Schulz,E. Stein von Kamienski	1996	221
15	Charge trapping and interface state generation in 6H-SiC MOS structures Microelectronic Engineering ·V. V. Afanas’ev,M. Baßler,Gerhard Pensl,Max J. Schulz	1995	17
16	<title>Nonuniformity correction and correctability of infrared focal plane arrays</title> Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·Max J. Schulz,Wiliam MacNaughton	1995	17
17	Electronic and IR-optical properties of silicide/silicon interfaces Infrared Physics ·Wolfgang A. Cabanski,Max J. Schulz	1991	21
18	Single defects and noise in sub-μ MOSFETs Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·Max J. Schulz,Hazel Kannan	1990	5
19	Optical absorption of gallium-doped silicon IEEE Transactions on Electron Devices ·Jafaryan Dehkordi Ameneh,R. Helbig,Max J. Schulz	1980	10
20	Interface states on semiconductor/insulator surfaces A. Goetzberger,E. Klausmann,Max J. Schulz	1976	138

About Max J. Schulz

Max J. Schulz is a scholar working on Electrical and Electronic Engineering, Aerospace Engineering, Atomic and Molecular Physics, and Optics, Mechanics of Materials and Ceramics and Composites, having authored 27 papers that have together received 1.0k indexed citations. Recurring topics across this work include Semiconductor materials and devices (11 papers), Silicon Carbide Semiconductor Technologies (7 papers), Semiconductor materials and interfaces (6 papers), Infrared Target Detection Methodologies (6 papers), Silicon and Solar Cell Technologies (5 papers), Thermography and Photoacoustic Techniques (5 papers), Thin-Film Transistor Technologies (4 papers) and Calibration and Measurement Techniques (4 papers). The work is most often cited by research in Electrical and Electronic Engineering (894 citations), Ceramics and Composites (64 citations), Atomic and Molecular Physics, and Optics (320 citations), Electronic, Optical and Magnetic Materials (110 citations) and Materials Chemistry (248 citations). Max J. Schulz has collaborated with scholars based in Germany, Belgium and United States. Frequent co-authors include Gerhard Pensl, M. Baßler, V. V. Afanas’ev, A. Goetzberger, E. Klausmann, E. Stein von Kamienski, A. Stesmans, V. V. Afanas’ev, Chris I. Harris and Wolfgang A. Cabanski. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics, IEEE Transactions on Electron Devices, Microelectronic Engineering and Physical Review B.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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