Jianqun Yang

1.1k total citations
78 papers, 827 citations indexed

About

Jianqun Yang is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Polymers and Plastics. According to data from OpenAlex, Jianqun Yang has authored 78 papers receiving a total of 827 indexed citations (citations by other indexed papers that have themselves been cited), including 53 papers in Electrical and Electronic Engineering, 25 papers in Materials Chemistry and 11 papers in Polymers and Plastics. Recurrent topics in Jianqun Yang's work include Semiconductor materials and devices (41 papers), Radiation Effects in Electronics (39 papers) and Advancements in Semiconductor Devices and Circuit Design (25 papers). Jianqun Yang is often cited by papers focused on Semiconductor materials and devices (41 papers), Radiation Effects in Electronics (39 papers) and Advancements in Semiconductor Devices and Circuit Design (25 papers). Jianqun Yang collaborates with scholars based in China, Germany and United States. Jianqun Yang's co-authors include Xingji Li, Chaoming Liu, Ying Wang, Meng-Tian Bao, Chenghao Yu, Fei Cao, Dezhuang Yang, Yong Liu, Guoliang Ma and Xue Wu and has published in prestigious journals such as Applied Physics Letters, Optics Express and IEEE Access.

In The Last Decade

Jianqun Yang

72 papers receiving 803 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Jianqun Yang China 17 579 247 106 79 71 78 827
Pawan K. Tyagi India 14 265 0.5× 388 1.6× 108 1.0× 129 1.6× 163 2.3× 38 656
Martin Knaut Germany 13 390 0.7× 287 1.2× 90 0.8× 56 0.7× 79 1.1× 43 548
P.X. Yan China 13 306 0.5× 571 2.3× 91 0.9× 83 1.1× 229 3.2× 21 736
Xiangang Xu China 10 215 0.4× 224 0.9× 56 0.5× 51 0.6× 32 0.5× 29 356
Shuai Yuan China 17 540 0.9× 340 1.4× 48 0.5× 65 0.8× 91 1.3× 75 793
Zhiqing Gu China 12 227 0.4× 228 0.9× 49 0.5× 62 0.8× 148 2.1× 29 412
Justin P. Freedman United States 9 189 0.3× 346 1.4× 51 0.5× 60 0.8× 68 1.0× 11 555
Lynn Gedvilas United States 12 816 1.4× 372 1.5× 84 0.8× 30 0.4× 20 0.3× 26 915
Jian-Fu Tang Taiwan 16 280 0.5× 391 1.6× 58 0.5× 78 1.0× 223 3.1× 48 556
Wenwu Wang China 17 1.1k 1.9× 382 1.5× 81 0.8× 42 0.5× 51 0.7× 150 1.2k

Countries citing papers authored by Jianqun Yang

Since Specialization
Citations

This map shows the geographic impact of Jianqun Yang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Jianqun Yang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Jianqun Yang more than expected).

Fields of papers citing papers by Jianqun Yang

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Jianqun Yang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Jianqun Yang. The network helps show where Jianqun Yang may publish in the future.

Co-authorship network of co-authors of Jianqun Yang

This figure shows the co-authorship network connecting the top 25 collaborators of Jianqun Yang. A scholar is included among the top collaborators of Jianqun Yang based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Jianqun Yang. Jianqun Yang is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Guo, Zhibin, Xin Zhang, Yuhang Jing, et al.. (2025). Effect of Electron Beam Irradiation on the Percentage Loss of Tensile Modulus of Epoxy Polymer. Polymers. 17(4). 447–447.
2.
Wang, Hao, Yadong Wei, Xiaodong Xu, et al.. (2025). Impact of Bias Condition on Electron Radiation Response of SiC MOSFETs. IEEE Transactions on Nuclear Science. 72(2). 175–183. 3 indexed citations
3.
Wang, Kai, et al.. (2025). Further Exploration in Displacement Damage Correlation of Neutrons and Si Ions in VPNP BJTs. IEEE Transactions on Nuclear Science. 72(5). 1718–1725.
4.
Liu, Shuo, Zhijie Zhou, Yadong Wei, et al.. (2025). Influence of Negative Bias Temperature Instability on Single-Event Burnout in n-Channel Power VDMOS Transistors. IEEE Transactions on Nuclear Science. 72(3). 901–907.
5.
Han, Yu, et al.. (2024). Efficient and Accurate Optimal Design Method for Radiation Shielding. IEEE Transactions on Nuclear Science. 71(11). 2475–2483.
6.
Liu, Zhongli, et al.. (2024). Normalization Indicator of Ion-Induced Radiation Damage in Power VDMOS Transistors. IEEE Transactions on Nuclear Science. 71(8). 1989–1995. 7 indexed citations
7.
Xu, Xiaodong, Jianqun Yang, Yadong Wei, et al.. (2024). Defect Identification in β-Ga2O3 Schottky Barrier Diodes With Electron Radiation and Annealing Regulating. IEEE Transactions on Nuclear Science. 71(5). 1178–1185. 15 indexed citations
8.
Shen, Pei Kang, et al.. (2023). Simulation study on single-event burnout reliability of 4H-SiC trench gate MOSFET with combined P-buried layer. Microelectronics Reliability. 142. 114931–114931. 4 indexed citations
9.
Wang, Ying, et al.. (2022). Simulation Study of Single-Event Effects for the 4H-SiC VDMOSFET With Ultralow On-Resistance. IEEE Transactions on Electron Devices. 69(6). 3283–3289. 11 indexed citations
10.
Wang, Ying, et al.. (2022). Simulation Study of Single-Event Burnout Reliability for 1.7-kV 4H-SiC VDMOSFET. IEEE Transactions on Device and Materials Reliability. 22(3). 431–437. 7 indexed citations
11.
Wang, Ying, Chenghao Yu, Xingji Li, & Jianqun Yang. (2022). A Comparative Study on Heavy-Ion Irradiation Impact on p-Channel and n-Channel Power UMOSFETs. IEEE Transactions on Nuclear Science. 69(6). 1249–1256. 35 indexed citations
12.
Yu, Chenghao, et al.. (2021). Simulation Study of Single-Event Burnout in 1.5-kV 4H-SiC JTE Termination. IEEE Transactions on Electron Devices. 68(7). 3711–3715. 17 indexed citations
13.
Yu, Chenghao, Ying Wang, Xingji Li, et al.. (2021). Study of TID Radiation Effects on the Breakdown Voltage of Buried P-Pillar SOI LDMOSFETs. IEEE Transactions on Device and Materials Reliability. 21(3). 303–309. 8 indexed citations
14.
Yu, Chenghao, et al.. (2021). Simulation Study on Single-Event Burnout in Rated 1.2-kV 4H-SiC Super-Junction VDMOS. IEEE Transactions on Electron Devices. 68(10). 5034–5040. 25 indexed citations
15.
Tang, Yun, Lei Wang, Huiping Zhu, et al.. (2021). Evolution and Mechanism of P-GaN Films Under Proton Irradiation and Its Influence on Electronic Device. IEEE Transactions on Nuclear Science. 69(3). 225–231. 1 indexed citations
16.
Yu, Chenghao, Ying Wang, Meng-Tian Bao, et al.. (2021). Impact of Heavy-Ion Irradiation in an 80-V Radiation-Hardened Split-Gate Trench Power UMOSFET. IEEE Transactions on Electron Devices. 69(2). 664–668. 13 indexed citations
17.
Huang, Hao, Ying Wang, Chenghao Yu, et al.. (2021). A High-Performance SiC Super-Junction MOSFET With a Step-Doping Profile. IEEE Journal of the Electron Devices Society. 9. 1084–1092. 7 indexed citations
18.
Wang, Ying, Xue Wu, Xingji Li, et al.. (2020). Single-Event Burnout Hardening Method and Evaluation in SiC Power MOSFET Devices. IEEE Transactions on Electron Devices. 67(10). 4340–4345. 26 indexed citations
19.
Wang, Ying, Xue Wu, Xingji Li, et al.. (2020). Simulation Study of Single-Event Burnout in GaN MISFET With Schottky Element. IEEE Transactions on Electron Devices. 67(12). 5466–5471. 26 indexed citations
20.
Wang, Ying, Mao Lin, Xingji Li, et al.. (2019). Single-Event Burnout Hardness for the 4H-SiC Trench-Gate MOSFETs Based on the Multi-Island Buffer Layer. IEEE Transactions on Electron Devices. 66(10). 4264–4272. 33 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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