Chenghao Yu

1.8k total citations · 1 hit paper
103 papers, 1.4k citations indexed

About

Chenghao Yu is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Materials Chemistry. According to data from OpenAlex, Chenghao Yu has authored 103 papers receiving a total of 1.4k indexed citations (citations by other indexed papers that have themselves been cited), including 75 papers in Electrical and Electronic Engineering, 17 papers in Biomedical Engineering and 14 papers in Materials Chemistry. Recurrent topics in Chenghao Yu's work include Silicon Carbide Semiconductor Technologies (45 papers), Semiconductor materials and devices (45 papers) and Advancements in Semiconductor Devices and Circuit Design (35 papers). Chenghao Yu is often cited by papers focused on Silicon Carbide Semiconductor Technologies (45 papers), Semiconductor materials and devices (45 papers) and Advancements in Semiconductor Devices and Circuit Design (35 papers). Chenghao Yu collaborates with scholars based in China, Taiwan and Japan. Chenghao Yu's co-authors include Ying Wang, Piaoping Yang, Fei Cao, Shuming Dong, Bin Liu, Jun Lin, Dan Yang, Yushan Dong, Xingji Li and Jing Liu and has published in prestigious journals such as Advanced Materials, Nano Letters and Chemistry of Materials.

In The Last Decade

Chenghao Yu

97 papers receiving 1.4k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

2D Piezoelectric Bi₂MoO₆ Nanoribbons for GSH‐Enhanced Sonodynamic Therapy

2021 289 citations Chenghao Yu et al. profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Chenghao Yu China	19	730	500	354	119	99	103	1.4k
Ki Wan Bong South Korea	25	361 0.5×	1.2k 2.4×	354 1.0×	407 3.4×	168 1.7×	85	1.8k
Semih Sevim Switzerland	16	221 0.3×	550 1.1×	448 1.3×	75 0.6×	113 1.1×	44	1.2k
Yu‐Jui Fan Taiwan	21	198 0.3×	645 1.3×	155 0.4×	312 2.6×	83 0.8×	65	1.1k
Young Wook Park South Korea	22	993 1.4×	416 0.8×	436 1.2×	122 1.0×	55 0.6×	134	1.6k
Stefanie Utech Germany	14	254 0.3×	902 1.8×	331 0.9×	108 0.9×	299 3.0×	15	1.5k
Hao Kuang China	18	349 0.5×	164 0.3×	342 1.0×	220 1.8×	56 0.6×	52	1.1k
Rung‐Ywan Tsai Taiwan	16	573 0.8×	417 0.8×	300 0.8×	198 1.7×	339 3.4×	51	1.2k
So Youn Kim South Korea	23	281 0.4×	421 0.8×	664 1.9×	146 1.2×	116 1.2×	78	1.5k

Countries citing papers authored by Chenghao Yu

Since Specialization

Citations

This map shows the geographic impact of Chenghao Yu's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Chenghao Yu with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Chenghao Yu more than expected).

Fields of papers citing papers by Chenghao Yu

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Chenghao Yu. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Chenghao Yu. The network helps show where Chenghao Yu may publish in the future.

Co-authorship network of co-authors of Chenghao Yu

This figure shows the co-authorship network connecting the top 25 collaborators of Chenghao Yu. A scholar is included among the top collaborators of Chenghao Yu based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Chenghao Yu. Chenghao Yu is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Feng, Boyuan, et al.. (2025). A novel p-GaN HEMT with superjunction silicon substrate for improved current collapse. Micro and Nanostructures. 201. 208102–208102. 1 indexed citations

Wang, Qiyao, et al.. (2025). Damage and degradation region of GaN HEMTs induced by different radiation effects. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 561. 165635–165635. 1 indexed citations

Wu, Xiaodong, et al.. (2024). Impact of SiC power MOSFET interface trap charges on UIS reliability under single pulse. Microelectronics Reliability. 155. 115375–115375.

Zhang, Yuan, Chenghao Yu, Cheng Peng, & Fu Peng. (2024). Potential Roles and Mechanisms of Curcumin and its Derivatives in the Regulation of Ferroptosis. International Journal of Biological Sciences. 20(12). 4838–4852. 13 indexed citations

Yu, Chenghao, Hui Yang, Wen‐Sheng Zhao, et al.. (2024). Research of Single-Event Burnout in P-NiO/n-Ga ₂ O ₃ Heterojunction Diode. IEEE Transactions on Device and Materials Reliability. 24(4). 480–486. 1 indexed citations

Pan, Jiahao, Wen‐Sheng Zhao, Xiaoping Hu, et al.. (2024). Proximal Policy Optimization-Based Optimization of Microwave Planar Resonators. IEEE Transactions on Components Packaging and Manufacturing Technology. 14(12). 2339–2347. 3 indexed citations

Yu, Chenghao, et al.. (2024). An improved 4H-SiC trench MOS barrier Schottky diode with current spreading layer and low resistance layer. Microelectronics Journal. 154. 106451–106451. 1 indexed citations

Yu, Chenghao, et al.. (2024). Research of single-event burnout in vertical Ga₂O₃ FinFET by low carrier lifetime control. Semiconductor Science and Technology. 39(8). 85009–85009. 1 indexed citations

Yu, Chenghao, et al.. (2023). Simulation study on single-event burnout in field-plated Ga2O3 MOSFETs. Microelectronics Reliability. 149. 115227–115227. 7 indexed citations

10.

Yu, Chenghao, et al.. (2022). Research of Single-Event Burnout in 1.2-kV Rated CoolSiC Trench MOSFET. IEEE Transactions on Device and Materials Reliability. 22(4). 469–476. 7 indexed citations

11.

Wang, Ying, et al.. (2022). Transient Current Analysis of Silicon Carbide Neutron Detector Using SRIM and TCAD. IEEE Sensors Journal. 22(11). 10620–10629. 10 indexed citations

12.

Yu, Chenghao, Ying Wang, Xingji Li, et al.. (2021). Study of TID Radiation Effects on the Breakdown Voltage of Buried P-Pillar SOI LDMOSFETs. IEEE Transactions on Device and Materials Reliability. 21(3). 303–309. 8 indexed citations

13.

Yu, Chenghao, et al.. (2021). Simulation Study on Single-Event Burnout in Rated 1.2-kV 4H-SiC Super-Junction VDMOS. IEEE Transactions on Electron Devices. 68(10). 5034–5040. 25 indexed citations

14.

Huang, Hao, Ying Wang, Chenghao Yu, et al.. (2021). A High-Performance SiC Super-Junction MOSFET With a Step-Doping Profile. IEEE Journal of the Electron Devices Society. 9. 1084–1092. 7 indexed citations

15.

Wang, Ying, Yue Hao, Xingji Li, et al.. (2019). Research of Single-Event Burnout and Hardening of AlGaN/GaN-Based MISFET. IEEE Transactions on Electron Devices. 66(2). 1118–1122. 38 indexed citations

16.

Yu, Chenghao, et al.. (2018). Research of Single-Event Burnout in 4H-SiC JBS Diode by Low Carrier Lifetime Control. IEEE Transactions on Electron Devices. 65(12). 5434–5439. 25 indexed citations

17.

Wang, Ying, et al.. (2018). An Optimized 4H-SiC Trench MOS Barrier Schottky (TMBS) Rectifier. IEEE Journal of the Electron Devices Society. 6. 1154–1158. 9 indexed citations

18.

Wang, Ying, et al.. (2017). High-Performance Split-Gate-Enhanced UMOSFET With Dual Channels. IEEE Transactions on Electron Devices. 64(4). 1455–1460. 16 indexed citations

19.

Yu, Chenghao, Ying Wang, Jun Liu, & Lingling Sun. (2017). Research of Single-Event Burnout in Floating Field Ring Termination of Power MOSFETs. IEEE Transactions on Electron Devices. 64(7). 2906–2911. 10 indexed citations

20.

Wang, Ying, et al.. (2016). A Trench Gate Power MOSFET with Reduced Gate Charge - A Review. International Journal of Science and Research (IJSR). 5(6). 677–679. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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