Laurent Auvray

589 total citations
49 papers, 495 citations indexed

About

Laurent Auvray is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, Laurent Auvray has authored 49 papers receiving a total of 495 indexed citations (citations by other indexed papers that have themselves been cited), including 38 papers in Electrical and Electronic Engineering, 30 papers in Atomic and Molecular Physics, and Optics and 19 papers in Materials Chemistry. Recurrent topics in Laurent Auvray's work include Semiconductor Quantum Structures and Devices (30 papers), Semiconductor materials and devices (19 papers) and Advanced Semiconductor Detectors and Materials (13 papers). Laurent Auvray is often cited by papers focused on Semiconductor Quantum Structures and Devices (30 papers), Semiconductor materials and devices (19 papers) and Advanced Semiconductor Detectors and Materials (13 papers). Laurent Auvray collaborates with scholars based in France, Tunisia and Germany. Laurent Auvray's co-authors include Y. Monteil, F. Saidi, Philippe Rodriguez, H. Mâaref, H. Dumont, Didier Chaussende, M. Pons, R. Madar, J. Dazord and Tarek Hidouri and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Applied Surface Science.

In The Last Decade

Laurent Auvray

47 papers receiving 492 citations

Peers

Countries citing papers authored by Laurent Auvray

Since Specialization

Citations

This map shows the geographic impact of Laurent Auvray's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Laurent Auvray with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Laurent Auvray more than expected).

Fields of papers citing papers by Laurent Auvray

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Laurent Auvray. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Laurent Auvray. The network helps show where Laurent Auvray may publish in the future.

Co-authorship network of co-authors of Laurent Auvray

This figure shows the co-authorship network connecting the top 25 collaborators of Laurent Auvray. A scholar is included among the top collaborators of Laurent Auvray based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Laurent Auvray. Laurent Auvray is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work	Indexed citations
1	Mechanism of Heteroepitaxial Growth of Boron Carbide on the Si-Face of 4H-SiC 2025 ·Crystal Growth & Design ·(unknown), Laurent Auvray, J. Andrieux, François Cauwet, M. Gutiérrez, Fernando Lloret, D. Araújo, Romain Bachelet, B. Canut, Gabriel Ferro	0
2	Epitaxial Growth of Boron Carbide on 4H-SiC 2023 ·Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena ·(unknown), Laurent Auvray, J. Andrieux, François Cauwet, (unknown), Fernando Lloret, D. Araújo, M. Gutiérrez, Gabriel Ferro	3
3	Investigation of the localization phenomenon in quaternary BInGaAs/GaAs for optoelectronic applications 2016 ·Superlattices and Microstructures ·Tarek Hidouri, (unknown), (unknown), F. Saidi, Hassen Maaref, Philippe Rodriguez, Laurent Auvray	9
4	Highly Mg-doped GaN dots and films grown by VLS transport at low temperature 2016 ·physica status solidi (a) ·(unknown), Laurent Auvray, (unknown), (unknown), François Cauwet, Gabriel Ferro, Christian Brylinski	2
5	Buried Selective Growth of p-Doped SiC by VLS Epitaxy 2012 ·Materials science forum ·(unknown), (unknown), (unknown), Mihai Lazar, Dominique Tournier, Pierre Brosselard, Véronique Soulière, Laurent Auvray, Gabriel Ferro, Christian Brylinski	8
6	Investigation of the Growth of 3C-SiC on Si by Vapor-Liquid-Solid ( VLS ) Transport 2011 ·Materials science forum ·(unknown), Laurent Auvray, Gabriel Ferro, François Cauwet, (unknown), Véronique Soulière, (unknown), (unknown), (unknown), Christian Brylinski	0
7	Growth temperature effects on boron incorporation and optical properties of BGaAs/GaAs grown by MOCVD 2010 ·Journal of Alloys and Compounds ·(unknown), F. Saidi, Philippe Rodriguez, Laurent Auvray, Y. Monteil, H. Mâaref	24
8	Structural and optical study of BxInyGa1−x−yAs/GaAs and InyGa1−yAs/GaAs QW's grown by MOCVD 2009 ·Journal of Alloys and Compounds ·F. Saidi, (unknown), H. Mâaref, Philippe Rodriguez, Laurent Auvray, Y. Monteil	24
9	Micropipe-induced birefringence in 6H silicon carbide 2009 ·Journal of Applied Crystallography ·T. Ouisse, Didier Chaussende, Laurent Auvray	21
10	Processing of Poly-SiC Substrates with Large Grains for Wafer-Bonding 2006 ·Materials science forum ·(unknown), Laurent Auvray, E. Blanquet, (unknown), Etienne Pernot, Jean‐Marie Bluet, P. Chaudouët, Michel Mermoux, (unknown), F. Letertre, M. Pons, R. Madar	2
11	Investigation of both interface states spectrum and deep oxide states from differential isothermal transient spectroscopy 2006 ·Materials Science in Semiconductor Processing ·Pierre Muret, Laurent Auvray, O. Salicio, C. Dubourdieu	2
12	Pulsed liquid-injection MOCVD of high-K oxides for advanced semiconductor technologies 2005 ·Materials Science and Engineering B ·C. Dubourdieu, Hervé Roussel, Carmen Jiménez, M. Audier, J.P. Sénateur, S. Lhostis, Laurent Auvray, F. Ducroquet, B. J. O’Sullivan, Paul K. Hurley, S. Rushworth, L.G. Hubert-Pfalzgraf	26
13	Control of the Supersaturation in the CF−PVT Process for the Growth of Silicon Carbide Crystals: Research and Applications 2005 ·Crystal Growth & Design ·Didier Chaussende, (unknown), Laurent Auvray, Francis Baillet, M. Pons, R. Madar	36
14	Optical mapping of aluminum doped p‐type SiC wafers 2005 ·physica status solidi (a) ·Peter J. Wellmann, Thomas L. Straubinger, (unknown), Ralf Müller, (unknown), M. Pons, Aurélie Thuaire, Alexandre Crisci, Michel Mermoux, Laurent Auvray, Jean Camassel	5
15	Optical investigation of GaAs_1−xN_x/GaAs heterostructure properties 2004 ·physica status solidi (b) ·(unknown), F. Hassen, H. Mâaref, Laurent Auvray, H. Dumont, Y. Monteil	3
16	Electron Back Scattering Diffraction (EBSD) as a Tool for the Investigation of 3C-SiC Nucleation and Growth on 6H or 4H 2004 ·Materials science forum ·Didier Chaussende, P. Chaudouët, Laurent Auvray, M. Pons, R. Madar	12
17	Excitons localization effects in GaAsN/GaAs epilayers grown by MOCVD 2002 ·Materials Science and Engineering C ·F. Saidi, F. Hassen, H. Mâaref, Laurent Auvray, H. Dumont, Y. Monteil	19
18	Microscopic structure and optical properties of GaAs1−xNx/GaAs(001) interface grown by metalorganic vapor phase epitaxy 2002 ·Applied Physics Letters ·H. Dumont, Laurent Auvray, Y. Monteil, (unknown), L. Largeau, G. Patriarche	8
19	Analysis of nitrogen incorporation mechanisms in GaAs1−xNx/GaAs epilayers grown by MOVPE 2001 ·Materials Science and Engineering B ·H. Dumont, Laurent Auvray, Y. Monteil, J. Bouix	9
20	Surface morphology, electrical and optical properties of In0.53Ga0.47As/InP grown by metalorganic vapor-phase epitaxy using trimethylarsine and arsine 1999 ·Journal of Crystal Growth ·H. Dumont, Laurent Auvray, J. Dazord, Y. Monteil, J. Bouix, A. Ougazzaden	6

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact