R. Madar

4.1k total citations
246 papers, 3.1k citations indexed

About

R. Madar is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, R. Madar has authored 246 papers receiving a total of 3.1k indexed citations (citations by other indexed papers that have themselves been cited), including 122 papers in Electrical and Electronic Engineering, 95 papers in Atomic and Molecular Physics, and Optics and 80 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in R. Madar's work include Semiconductor materials and interfaces (84 papers), Silicon Carbide Semiconductor Technologies (64 papers) and Semiconductor materials and devices (52 papers). R. Madar is often cited by papers focused on Semiconductor materials and interfaces (84 papers), Silicon Carbide Semiconductor Technologies (64 papers) and Semiconductor materials and devices (52 papers). R. Madar collaborates with scholars based in France, Germany and Italy. R. Madar's co-authors include C. Bérnard, J.P. Sénateur, O. Laborde, Ο. Thomas, R. Fruchart, M. Pons, U. Gottlieb, E. Blanquet, Alain Rouault and J.P. Sénateur and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

R. Madar

242 papers receiving 3.0k citations

Author Peers

Peers are selected by citation overlap in the author's most active subfields. citations · hero ref

Author Last Decade Papers Cites
R. Madar 1.5k 1.2k 965 917 876 246 3.1k
H. Aourag 919 0.6× 773 0.7× 580 0.6× 2.0k 2.2× 499 0.6× 160 3.0k
B. Bouhafs 1.5k 1.0× 772 0.7× 1.7k 1.8× 3.3k 3.6× 887 1.0× 192 4.4k
E. A. Giess 1.1k 0.8× 881 0.8× 680 0.7× 1.5k 1.6× 857 1.0× 91 2.8k
Lars Fast 528 0.4× 493 0.4× 721 0.7× 2.4k 2.6× 872 1.0× 42 3.4k
Xiangang Xu 1.7k 1.2× 1.0k 0.9× 811 0.8× 1.6k 1.7× 964 1.1× 296 3.2k
Félix Mouhat 1.0k 0.7× 355 0.3× 810 0.8× 2.9k 3.2× 341 0.4× 6 3.5k
M. Brunel 1.1k 0.8× 698 0.6× 405 0.4× 1.3k 1.4× 390 0.4× 140 2.4k
K. M. Unruh 760 0.5× 528 0.5× 950 1.0× 828 0.9× 388 0.4× 72 2.1k
Olle Hellman 799 0.5× 614 0.5× 476 0.5× 2.8k 3.1× 422 0.5× 64 3.4k
T. G. Holesinger 820 0.6× 526 0.5× 1.1k 1.2× 2.1k 2.3× 2.5k 2.8× 127 4.0k

Countries citing papers authored by R. Madar

Since Specialization
Citations

This map shows the geographic impact of R. Madar's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R. Madar with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R. Madar more than expected).

Fields of papers citing papers by R. Madar

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R. Madar. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R. Madar. The network helps show where R. Madar may publish in the future.

Co-authorship network of co-authors of R. Madar

This figure shows the co-authorship network connecting the top 25 collaborators of R. Madar. A scholar is included among the top collaborators of R. Madar based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with R. Madar. R. Madar is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Chaussende, Didier, et al.. (2006). In Situ Observation of Mass Transfer in the CF-PVT Growth Process by X-Ray Imaging. Materials science forum. 527-529. 63–66. 1 indexed citations
2.
Latu‐Romain, L., Didier Chaussende, Sandrine Juillaguet, et al.. (2006). Characterization of Bulk <111> 3C-SiC Single Crystals Grown on 4H-SiC by the CF-PVT Method. Materials science forum. 527-529. 99–102. 11 indexed citations
3.
Chaussende, Didier, et al.. (2005). Large Area DPB Free (111) β-SiC Thick Layer Grown on (0001) α-SiC Nominal Surfaces by the CF-PVT Method. Materials science forum. 483-485. 225–228. 24 indexed citations
4.
Madar, R., et al.. (2004). Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003. 2 indexed citations
5.
Madar, R., Jean Camassel, & E. Blanquet. (2004). Silicon Carbide and Related Materials 2003. Trans Tech Publications Ltd. eBooks. 9 indexed citations
6.
Chaussende, Didier, Laurent Auvray, Francis Baillet, et al.. (2004). Characterization of Thick 2-Inch 4H-SiC Layers Grown by the Continuous Feed-Physical Vapor Transport Method. Materials science forum. 457-460. 91–94. 6 indexed citations
7.
Boujelben, W., M. Ellouze, A. Cheikhrouhou, R. Madar, & H. Fueß. (2004). Effect of Fe doping on the structural and magneto transport properties in Pr0.67Sr0.33MnO3 perovskite manganese. physica status solidi (a). 201(7). 1410–1415. 8 indexed citations
8.
Pons, M., Francis Baillet, E. Blanquet, et al.. (2003). Vapor phase techniques for the fabrication of homoepitaxial layers of silicon carbide: process modeling and characterization. Applied Surface Science. 212-213. 177–183. 3 indexed citations
9.
Pons, M., E. Blanquet, P. Ferret, et al.. (2002). Simulation of the Large-Area Growth of Homoepitaxial 4H-SiC by Chemical Vapor Deposition. Materials science forum. 389-393. 223–226. 4 indexed citations
10.
Bérnard, C., M. Pons, E. Blanquet, & R. Madar. (1999). Thermodynamic Calculations as the Basis for CVD Production of Silicide Coatings. MRS Bulletin. 24(4). 27–31. 10 indexed citations
11.
Pons, M., E. Blanquet, Jean-Marc Dedulle, R. Madar, & C. Bérnard. (1997). Different macroscopic approaches to the modelling of the sublimation growth of SiC single crystals. Materials Science and Engineering B. 46(1-3). 308–312. 15 indexed citations
12.
13.
Affronte, M., O. Laborde, U. Gottlieb, Ο. Thomas, & R. Madar. (1995). Angular dependence of the magnetoresistance of TiSi2 single crystals. Applied Surface Science. 91(1-4). 98–102. 1 indexed citations
14.
Keller, N., O. Laborde, U. Gottlieb, & R. Madar. (1995). Effect of the Volume Variation on the Superconductivity of TaSi2. MRS Proceedings. 402. 1 indexed citations
15.
Pons, M., C. Bérnard, & R. Madar. (1993). Numerical modelling for CVD simulation and process optimization: coupled thermochemical and mass transport approaches. Surface and Coatings Technology. 61(1-3). 274–281. 8 indexed citations
16.
Bérnard, C., F. Weiss, A. Pisch, & R. Madar. (1993). Thermodynamic Simulation of MOCVD YBa2Cu3O7−x Thin Film Deposition. MRS Proceedings. 335. 1 indexed citations
17.
Gottlieb, U., J.C. Lasjaunias, J.L. Tholence, et al.. (1992). Superconductivity inTaSi2single crystals. Physical review. B, Condensed matter. 45(9). 4803–4806. 25 indexed citations
18.
Madar, R., et al.. (1992). Crystallographic properties of Ce(Si,Ge)2 − x solid solutions. Journal of Alloys and Compounds. 189(1). 9–15. 3 indexed citations
19.
L’Héritier, Ph., P. Chaudouët, R. Madar, et al.. (1984). Une nouvelle série d'hydrures métalliques ferromagnétiques de type Nd2Fe14BHx(0 3 indexed citations
20.
Madar, R., et al.. (1981). Crystal chemistry of M12P7 phases in relation with the M2P phosphides. Journal of Solid State Chemistry. 40(2). 131–135. 9 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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