Etienne Pernot

814 total citations
46 papers, 596 citations indexed

About

Etienne Pernot is a scholar working on Electrical and Electronic Engineering, Ceramics and Composites and Biomedical Engineering. According to data from OpenAlex, Etienne Pernot has authored 46 papers receiving a total of 596 indexed citations (citations by other indexed papers that have themselves been cited), including 32 papers in Electrical and Electronic Engineering, 11 papers in Ceramics and Composites and 11 papers in Biomedical Engineering. Recurrent topics in Etienne Pernot's work include Silicon Carbide Semiconductor Technologies (23 papers), Advanced ceramic materials synthesis (11 papers) and Silicon and Solar Cell Technologies (8 papers). Etienne Pernot is often cited by papers focused on Silicon Carbide Semiconductor Technologies (23 papers), Advanced ceramic materials synthesis (11 papers) and Silicon and Solar Cell Technologies (8 papers). Etienne Pernot collaborates with scholars based in France, Germany and Greece. Etienne Pernot's co-authors include J. Härtwig, Elodie Boller, D. Lübbert, Tilo Baumbach, David Riassetto, M. Langlet, R. Madar, M. Anne, M. Bacmann and G. Mairesse and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of The Electrochemical Society.

In The Last Decade

Etienne Pernot

44 papers receiving 581 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Etienne Pernot France 13 269 266 117 81 75 46 596
H. Kimura Japan 13 377 1.4× 398 1.5× 89 0.8× 174 2.1× 88 1.2× 39 777
A.K. Poswal India 14 175 0.7× 511 1.9× 53 0.5× 117 1.4× 69 0.9× 50 741
D. H. Pearson United States 10 215 0.8× 437 1.6× 90 0.8× 189 2.3× 73 1.0× 19 794
Yao Yang China 9 146 0.5× 555 2.1× 128 1.1× 69 0.9× 68 0.9× 23 941
Christine Revenant France 10 158 0.6× 385 1.4× 115 1.0× 101 1.2× 65 0.9× 24 653
Ruoshi Sun United States 13 256 1.0× 420 1.6× 243 2.1× 116 1.4× 36 0.5× 19 845
C. Scharfschwerdt Germany 8 285 1.1× 413 1.6× 49 0.4× 130 1.6× 35 0.5× 9 677
S. Kennou Greece 16 369 1.4× 575 2.2× 79 0.7× 63 0.8× 36 0.5× 38 923
Hiroyuki Setoyama Japan 15 387 1.4× 450 1.7× 94 0.8× 50 0.6× 49 0.7× 56 832
D. Martín y Marero Spain 10 129 0.5× 224 0.8× 64 0.5× 108 1.3× 64 0.9× 23 467

Countries citing papers authored by Etienne Pernot

Since Specialization
Citations

This map shows the geographic impact of Etienne Pernot's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Etienne Pernot with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Etienne Pernot more than expected).

Fields of papers citing papers by Etienne Pernot

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Etienne Pernot. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Etienne Pernot. The network helps show where Etienne Pernot may publish in the future.

Co-authorship network of co-authors of Etienne Pernot

This figure shows the co-authorship network connecting the top 25 collaborators of Etienne Pernot. A scholar is included among the top collaborators of Etienne Pernot based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Etienne Pernot. Etienne Pernot is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Legallais, Maxime, et al.. (2019). DNA grafting on silicon nanonets using an eco-friendly functionalization process based on epoxy silane. Materials Today Proceedings. 6. 333–339. 4 indexed citations
2.
Zhang, Shan‐Ting, G. Vitrant, Etienne Pernot, et al.. (2018). Hazy Al2O3-FTO Nanocomposites: A Comparative Study with FTO-Based Nanocomposites Integrating ZnO and S:TiO2 Nanostructures. Nanomaterials. 8(6). 440–440. 4 indexed citations
3.
Zhang, Shan‐Ting, Jean‐Luc Rouvière, Vincent Consonni, et al.. (2017). High quality epitaxial fluorine-doped SnO2 films by ultrasonic spray pyrolysis: Structural and physical property investigation. Materials & Design. 132. 518–525. 15 indexed citations
4.
Chaussende, Didier, et al.. (2006). Growth of AlN and AlN-SiC Solid Solution by Sublimation Method. Materials science forum. 527-529. 1501–1504. 1 indexed citations
5.
Latu‐Romain, L., Didier Chaussende, Sandrine Juillaguet, et al.. (2006). Characterization of Bulk <111> 3C-SiC Single Crystals Grown on 4H-SiC by the CF-PVT Method. Materials science forum. 527-529. 99–102. 11 indexed citations
6.
Auvray, Laurent, E. Blanquet, Etienne Pernot, et al.. (2006). Processing of Poly-SiC Substrates with Large Grains for Wafer-Bonding. Materials science forum. 527-529. 71–74. 2 indexed citations
7.
Pons, M., E. Blanquet, Didier Chaussende, et al.. (2006). High temperature processing of poly-SiC substrates from the vapor phase for wafer-bonding. Surface and Coatings Technology. 201(7). 4014–4020. 4 indexed citations
8.
Pons, M., L. Di Cioccio, E. Blanquet, et al.. (2004). Contribution of numerical simulation to silicon carbide bulk growth and epitaxy. Journal of Physics Condensed Matter. 16(17). S1579–S1595. 5 indexed citations
9.
Härtwig, J., J. Baruchel, Harald Kühn, et al.. (2003). X-ray “magnifying” imaging investigation of giant Burgers vector micropipe-dislocations in 4H-SiC. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 200. 323–328. 7 indexed citations
10.
Pons, M., Francis Baillet, E. Blanquet, et al.. (2003). Vapor phase techniques for the fabrication of homoepitaxial layers of silicon carbide: process modeling and characterization. Applied Surface Science. 212-213. 177–183. 3 indexed citations
11.
Pernot, Etienne, Michel Mermoux, Jean‐Marie Bluet, et al.. (2003). Investigation of Defects in 4H-SiC by Synchrotron Topography, Raman Spectroscopy Imaging and Photoluminescence Spectroscopy Imaging. Materials science forum. 433-436. 265–268. 2 indexed citations
12.
Pernot, Etienne, et al.. (2002). Investigation of Structural Defects during 4H-SiC Schottky Diode Processing by Synchrotron Topography. Materials science forum. 389-393. 419–422. 3 indexed citations
13.
Madar, R., et al.. (2002). Defects in sublimation-grown SiC bulk crystals. Journal of Physics Condensed Matter. 14(48). 13009–13018. 6 indexed citations
14.
Baruchel, J., Elodie Boller, J.I. Espeso, et al.. (2001). Bragg-diffraction imaging of magnetic crystals with third-generation synchrotron radiation. Journal of Magnetism and Magnetic Materials. 233(1-2). 38–47. 5 indexed citations
15.
Pons, M., A. Pisch, Philippe Grosse, et al.. (2001). SiC Single Crystal Growth by Sublimation: Experimental and Numerical Results. Materials science forum. 353-356. 7–10. 12 indexed citations
16.
Pernot, Etienne, Michel Mermoux, J. Kreisel, et al.. (2001). X-ray Diffraction, Micro-Raman and Birefringence Imaging of Silicon Carbide. Materials science forum. 353-356. 283–286. 6 indexed citations
17.
Kayambaki, M., Konstantinos Zekentes, K. Tsagaraki, Etienne Pernot, & Rositza Yakimova. (2001). Electrochemical Characterization of p-Type Hexagonal SiC. Materials science forum. 353-356. 619–622. 4 indexed citations
18.
Chaix‐Pluchery, Odette, Etienne Pernot, M. Pons, et al.. (2000). Progress in SiC Bulk Growth. Materials science forum. 338-342. 13–16. 8 indexed citations
19.
Soldo, Y., Jean‐Louis Hazemann, Daniel Aberdam, et al.. (1998). Semiconductor-to-metal transition in fluid selenium at high pressure and high temperature: An investigation using x-ray-absorption spectroscopy. Physical review. B, Condensed matter. 57(1). 258–268. 62 indexed citations
20.
Pernot, Etienne, M. Anne, M. Bacmann, et al.. (1994). Structure and conductivity of Cu and Ni-substituted Bi4V2O11 compounds. Solid State Ionics. 70-71. 259–263. 85 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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