Didier Chaussende

4.4k total citations
150 papers, 1.7k citations indexed

About

Didier Chaussende is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Materials Chemistry. According to data from OpenAlex, Didier Chaussende has authored 150 papers receiving a total of 1.7k indexed citations (citations by other indexed papers that have themselves been cited), including 123 papers in Electrical and Electronic Engineering, 34 papers in Electronic, Optical and Magnetic Materials and 31 papers in Materials Chemistry. Recurrent topics in Didier Chaussende's work include Silicon Carbide Semiconductor Technologies (103 papers), Semiconductor materials and devices (55 papers) and Silicon and Solar Cell Technologies (39 papers). Didier Chaussende is often cited by papers focused on Silicon Carbide Semiconductor Technologies (103 papers), Semiconductor materials and devices (55 papers) and Silicon and Solar Cell Technologies (39 papers). Didier Chaussende collaborates with scholars based in France, Germany and Japan. Didier Chaussende's co-authors include T. Ouisse, M. Pons, Gabriel Ferro, F. Mercier, Alexandre Boulle, Odette Chaix‐Pluchery, R. Madar, Y. Monteil, Eirini Sarigiannidou and L. Latu‐Romain and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Geochimica et Cosmochimica Acta.

In The Last Decade

Didier Chaussende

140 papers receiving 1.7k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Didier Chaussende France 24 1.1k 736 360 307 273 150 1.7k
Pirouz Pirouz United States 18 674 0.6× 543 0.7× 227 0.6× 220 0.7× 146 0.5× 31 1.2k
Blair Tuttle United States 27 1.7k 1.6× 847 1.2× 124 0.3× 97 0.3× 325 1.2× 84 2.2k
V. F. Tsvetkov United States 25 1.9k 1.7× 344 0.5× 456 1.3× 240 0.8× 288 1.1× 56 2.1k
V. Heera Germany 20 1.1k 1.0× 653 0.9× 226 0.6× 90 0.3× 98 0.4× 100 1.6k
M.N. Mirzayev Azerbaijan 21 268 0.2× 846 1.1× 176 0.5× 166 0.5× 264 1.0× 78 1.1k
C. Jaussaud France 23 1.3k 1.2× 351 0.5× 128 0.4× 92 0.3× 154 0.6× 68 1.5k
В. Т. Бублик Russia 18 440 0.4× 601 0.8× 107 0.3× 137 0.4× 135 0.5× 115 997
M. A. Capano United States 22 1.3k 1.2× 1.0k 1.4× 80 0.2× 244 0.8× 162 0.6× 56 2.0k
Margareta K. Linnarsson Sweden 23 1.8k 1.6× 896 1.2× 162 0.5× 56 0.2× 350 1.3× 133 2.2k
W. J. Choyke United States 22 1.7k 1.5× 564 0.8× 235 0.7× 73 0.2× 343 1.3× 39 2.0k

Countries citing papers authored by Didier Chaussende

Since Specialization
Citations

This map shows the geographic impact of Didier Chaussende's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Didier Chaussende with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Didier Chaussende more than expected).

Fields of papers citing papers by Didier Chaussende

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Didier Chaussende. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Didier Chaussende. The network helps show where Didier Chaussende may publish in the future.

Co-authorship network of co-authors of Didier Chaussende

This figure shows the co-authorship network connecting the top 25 collaborators of Didier Chaussende. A scholar is included among the top collaborators of Didier Chaussende based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Didier Chaussende. Didier Chaussende is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
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Kawanishi, Sakiko, Soh Ikarashi, Takeshi Mitani, et al.. (2025). Synthesis of dense SiC compacts by liquid Si infiltration and their dissolution characteristics in molten Si–Cr alloy. Ceramics International. 51(21). 33095–33104.
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Chaussende, Didier, Alexandre Crisci, Stéphane Coindeau, et al.. (2024). Investigation of amorphous-SiC thin film deposition by RF magnetron sputtering for optical applications. Materials Science in Semiconductor Processing. 182. 108673–108673. 8 indexed citations
5.
Shi, Xiaodong, et al.. (2024). Strong third-order nonlinearity in amorphous silicon carbide waveguides. Optics Letters. 49(15). 4389–4389. 7 indexed citations
6.
Chaussende, Didier, et al.. (2023). Evidence of twin mediated growth in the CVD of polycrystalline silicon carbide. Acta Materialia. 259. 119274–119274. 7 indexed citations
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Ou, Haiyan, et al.. (2023). Novel Photonic Applications of Silicon Carbide. Materials. 16(3). 1014–1014. 33 indexed citations
9.
Pons, Ramón, et al.. (2022). Design of a coil for electromagnetic levitation: comparison of numerical models and coil realization. Magnetohydrodynamics. 58(1-2). 55–64.
10.
Pons, Ramón, et al.. (2022). Study of heat transfer in a nickel droplet in electromagnetic levitation. Magnetohydrodynamics. 58(4). 483–490.
11.
Kioseoglou, Joseph, et al.. (2019). Structural, Electronic and Vibrational Properties of Al4C3. physica status solidi (b). 256(10). 7 indexed citations
12.
Ferro, Gabriel & Didier Chaussende. (2017). A new model for in situ nitrogen incorporation into 4H-SiC during epitaxy. Scientific Reports. 7(1). 43069–43069. 23 indexed citations
13.
Sarigiannidou, Eirini, et al.. (2017). Vaporization and condensation in the Al4C3-SiC system. Journal of the European Ceramic Society. 37(15). 4475–4482. 15 indexed citations
14.
Chaussende, Didier, et al.. (2016). Effect of Aluminum during the High Temperature Solution Growth of Si-Face 4H-SiC. Materials science forum. 858. 37–40. 3 indexed citations
15.
Cherniak, D. J., et al.. (2016). Diffusion of helium in SiC and implications for retention of cosmogenic He. Geochimica et Cosmochimica Acta. 192. 248–257. 6 indexed citations
16.
Pédesseau, Laurent, Jacky Even, M. Modreanu, et al.. (2015). Al4SiC4 wurtzite crystal: Structural, optoelectronic, elastic, and piezoelectric properties. APL Materials. 3(12). 17 indexed citations
17.
Dedulle, Jean-Marc, et al.. (2011). Modeling of the Growth Rate during Top Seeded Solution Growth of SiC Using Pure Silicon as a Solvent. Crystal Growth & Design. 12(2). 909–913. 26 indexed citations
18.
Mercier, F., et al.. (2010). Is the Liquid Phase a Viable Approach for Bulk Growth of 3C-SiC?. Materials science forum. 645-648. 67–70. 4 indexed citations
19.
Mercier, F., et al.. (2009). Coupled heat transfer and fluid dynamics modeling of high-temperature SiC solution growth. Journal of Crystal Growth. 312(2). 155–163. 54 indexed citations
20.
Pons, M., Francis Baillet, E. Blanquet, et al.. (2003). Vapor phase techniques for the fabrication of homoepitaxial layers of silicon carbide: process modeling and characterization. Applied Surface Science. 212-213. 177–183. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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