V. J. B. Torres

1.2k total citations
80 papers, 942 citations indexed

About

V. J. B. Torres is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, V. J. B. Torres has authored 80 papers receiving a total of 942 indexed citations (citations by other indexed papers that have themselves been cited), including 64 papers in Electrical and Electronic Engineering, 44 papers in Atomic and Molecular Physics, and Optics and 44 papers in Materials Chemistry. Recurrent topics in V. J. B. Torres's work include Semiconductor materials and devices (40 papers), Semiconductor materials and interfaces (29 papers) and Silicon and Solar Cell Technologies (27 papers). V. J. B. Torres is often cited by papers focused on Semiconductor materials and devices (40 papers), Semiconductor materials and interfaces (29 papers) and Silicon and Solar Cell Technologies (27 papers). V. J. B. Torres collaborates with scholars based in Portugal, United Kingdom and Sweden. V. J. B. Torres's co-authors include J. Coutinho, R. Jones, P. R. Briddon, Sven Öberg, P. R. Briddon, В. П. Маркевич, А. R. Peaker, S. Öberg, S. Öberg and O. Pagès and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

V. J. B. Torres

78 papers receiving 924 citations

Peers

Countries citing papers authored by V. J. B. Torres

Since Specialization

Citations

This map shows the geographic impact of V. J. B. Torres's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by V. J. B. Torres with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites V. J. B. Torres more than expected).

Fields of papers citing papers by V. J. B. Torres

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by V. J. B. Torres. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by V. J. B. Torres. The network helps show where V. J. B. Torres may publish in the future.

Co-authorship network of co-authors of V. J. B. Torres

This figure shows the co-authorship network connecting the top 25 collaborators of V. J. B. Torres. A scholar is included among the top collaborators of V. J. B. Torres based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with V. J. B. Torres. V. J. B. Torres is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Taxonomy of high pressure vibration spectra of zincblende semiconductor alloys based on the percolation model 2025 ·Scientific Reports ·(unknown), (unknown), O. Pagès, (unknown), V. J. B. Torres, Yann Le Godec, (unknown), Ch. Bellin, (unknown), Sébastien Diliberto, Stéphanie Michel, (unknown), K. Strzałkowski	1
2	Hydrogen Reactions with Dopants and Impurities in Solar Silicon from First Principles 2023 ·Solar RRL ·J. Coutinho, (unknown), V. J. B. Torres, (unknown), В. П. Маркевич, А. R. Peaker	3
3	Theory of reactions between hydrogen and group-III acceptors in silicon 2023 ·Physical review. B. ·J. Coutinho, (unknown), V. J. B. Torres, (unknown), В. П. Маркевич, А. R. Peaker	6
4	Raman study of Cd1−xZnxTe phonons and phonon–polaritons—Experiment andab initiocalculations 2023 ·Journal of Applied Physics ·(unknown), (unknown), O. Pagès, A. V. Postnikov, V. J. B. Torres, (unknown), Yann Le Godec, J. P. Itié, Laurent Broch, (unknown), Aotmane En Naciri, Sébastien Diliberto, Stéphanie Michel, (unknown), (unknown), K. Strzałkowski	6
5	Theory of shallow and deep boron defects in 4H-SiC 2022 ·Physical review. B. ·V. J. B. Torres, Ivana Capan, J. Coutinho	12
6	Phonon-based partition of (ZnSe-like) semiconductor mixed crystals on approach to their pressure-induced structural transition 2020 ·Scientific Reports ·(unknown), O. Pagès, V. J. B. Torres, A. Polian, (unknown), Gopal K. Pradhan, Chandrabhas Narayana, Mala N. Rao, Rekha Rao, Carole Gardiennet, Gwendal Kervern, K. Strzałkowski, F. Firszt	4
7	Multi-phonon (percolation) behavior and local clustering of CdxZn1−xSe-cubic mixed crystals (x ≤ 0.3): A Raman–ab initio study 2019 ·Journal of Applied Physics ·(unknown), O. Pagès, (unknown), V. J. B. Torres, A. V. Postnikov, A. Polian, F. Firszt, K. Strzałkowski, Aotmane En Naciri, Laurent Broch, Mala N. Rao, Rekha Rao, A. Maillard, J. P. Itié	6
8	中程度の(Ge,Si)含有量でのGeSi Ramanスペクトルに対するクラスタ化/反クラスタ化の効果:パーコレーションスキーム対ab initio計算 2017 ·Journal of Applied Physics ·V. J. B. Torres, (unknown), O. Pagès, M. J. Rayson	2
9	Clustering/anticlustering effects on the GeSi Raman spectra at moderate (Ge,Si) contents: Percolation scheme vs. ab initio calculations 2017 ·Journal of Applied Physics ·V. J. B. Torres, (unknown), O. Pagès, M. J. Rayson	7
10	Mössbauer parameters of Fe-related defects in group-IV semiconductors: First principles calculations 2016 ·Journal of Applied Physics ·(unknown), J. Coutinho, S. Öberg, V. J. B. Torres	6
11	Born effective charges of Cu2ZnSnS4 quaternary compound: First principles calculations 2012 ·Thin Solid Films ·(unknown), J. Coutinho, V. J. B. Torres	6
12	Structure and electronic properties of trivacancy and trivacancy‐oxygen complexes in silicon 2010 ·physica status solidi (a) ·В. П. Маркевич, А. R. Peaker, B. Hamilton, С. Б. Ластовский, Л. И. Мурин, J. Coutinho, V. J. B. Torres, L. Dobaczewski, Bengt Svensson	28
13	Ab-initio modeling of carbon and carbon–hydrogen defects in InAs 2007 ·Physica B Condensed Matter ·V. J. B. Torres, J. Coutinho, P. R. Briddon	2
14	Studies of the VO centre in Ge using first principles cluster calculations 2006 ·Materials Science in Semiconductor Processing ·Alexandra Carvalho, R. Jones, J. Coutinho, M. J. Shaw, V. J. B. Torres, Sven Öberg, P. R. Briddon	3
15	Calculation of deep states in SiGe alloys: Interstitial carbon-oxygen complexes 2004 ·Physical Review B ·(unknown), J. Coutinho, V. J. B. Torres, P. R. Briddon, (unknown)	14
16	Ab initio modeling of Be–H and Zn–H complexes in Si 2003 ·Physica B Condensed Matter ·J. Coutinho, V. J. B. Torres, P. R. Briddon	2
17	Mg-H and Be-H complexes in cubic boron nitride 2001 ·Journal of Physics Condensed Matter ·(unknown), V. J. B. Torres, R. Jones, P. R. Briddon, Sven Öberg	2
18	Early stages of silicon oxidation 1995 ·Interface Science ·V. J. B. Torres, A.M. Stoneham, C.J. Sofield, A. H. Harker, (unknown)	8
19	Theory of Nitrogen Aggregates in Diamond: The H3 and H4 Defects 1993 ·Materials science forum ·R. Jones, V. J. B. Torres, P. R. Briddon, Sven Öberg	10
20	Accurate Prediction of Lattice Distortion for Complex Defects in Semiconductors: Extended Interstitials as Tests of Valence Force Potentials 1986 ·Materials science forum ·V. J. B. Torres, P. Masri, A. M. Stoneham	4

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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