L. Dobaczewski

2.1k total citations
101 papers, 1.7k citations indexed

About

L. Dobaczewski is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, L. Dobaczewski has authored 101 papers receiving a total of 1.7k indexed citations (citations by other indexed papers that have themselves been cited), including 87 papers in Electrical and Electronic Engineering, 66 papers in Atomic and Molecular Physics, and Optics and 24 papers in Materials Chemistry. Recurrent topics in L. Dobaczewski's work include Silicon and Solar Cell Technologies (54 papers), Semiconductor materials and interfaces (43 papers) and Semiconductor materials and devices (43 papers). L. Dobaczewski is often cited by papers focused on Silicon and Solar Cell Technologies (54 papers), Semiconductor materials and interfaces (43 papers) and Semiconductor materials and devices (43 papers). L. Dobaczewski collaborates with scholars based in Poland, United Kingdom and Denmark. L. Dobaczewski's co-authors include А. R. Peaker, K. Bonde Nielsen, P. Kaczor, I.D. Hawkins, В. П. Маркевич, V. V. Litvinov, Л. И. Мурин, Z. R. Żytkiewicz, M. Missous and Jerzy M. Langer and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

L. Dobaczewski

100 papers receiving 1.6k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
L. Dobaczewski Poland 22 1.4k 982 481 204 97 101 1.7k
C.A.J. Ammerlaan Netherlands 24 1.4k 1.0× 945 1.0× 900 1.9× 172 0.8× 65 0.7× 158 1.9k
D. Shaw United Kingdom 17 1.0k 0.7× 767 0.8× 534 1.1× 102 0.5× 91 0.9× 70 1.4k
J. L. Lindström Sweden 32 2.8k 1.9× 955 1.0× 1.1k 2.4× 380 1.9× 101 1.0× 152 3.0k
M. Geva United States 19 1.0k 0.7× 883 0.9× 239 0.5× 88 0.4× 166 1.7× 90 1.3k
W. Schmid Germany 20 1.3k 0.9× 882 0.9× 493 1.0× 140 0.7× 53 0.5× 66 1.6k
M.R. Brozel United Kingdom 16 750 0.5× 638 0.6× 283 0.6× 75 0.4× 88 0.9× 63 1.0k
Masashi Uematsu Japan 24 1.6k 1.1× 743 0.8× 841 1.7× 238 1.2× 46 0.5× 130 1.9k
J. W. Petersen Denmark 20 661 0.5× 629 0.6× 271 0.6× 218 1.1× 81 0.8× 69 1.2k
O. J. Marsh United States 23 1.2k 0.8× 626 0.6× 511 1.1× 380 1.9× 51 0.5× 59 1.5k
Shun‐ichi Gonda Japan 22 818 0.6× 740 0.8× 603 1.3× 180 0.9× 198 2.0× 84 1.3k

Countries citing papers authored by L. Dobaczewski

Since Specialization
Citations

This map shows the geographic impact of L. Dobaczewski's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by L. Dobaczewski with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites L. Dobaczewski more than expected).

Fields of papers citing papers by L. Dobaczewski

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by L. Dobaczewski. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by L. Dobaczewski. The network helps show where L. Dobaczewski may publish in the future.

Co-authorship network of co-authors of L. Dobaczewski

This figure shows the co-authorship network connecting the top 25 collaborators of L. Dobaczewski. A scholar is included among the top collaborators of L. Dobaczewski based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with L. Dobaczewski. L. Dobaczewski is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Маркевич, В. П., А. R. Peaker, B. Hamilton, et al.. (2010). Structure and electronic properties of trivacancy and trivacancy‐oxygen complexes in silicon. physica status solidi (a). 208(3). 568–571. 28 indexed citations
2.
Kruszewski, P., L. Dobaczewski, В. П. Маркевич, et al.. (2008). Hole-Related Electrical Activity of InAs/GaAs Quantum Dots. Acta Physica Polonica A. 114(5). 1201–1206. 1 indexed citations
3.
Маркевич, В. П., L. Dobaczewski, K. Bonde Nielsen, et al.. (2008). Electrically active hydrogen-implantation-induced defects in Ge crystals and SiGe alloys. Thin Solid Films. 517(1). 419–421. 2 indexed citations
4.
Dobaczewski, L., S. Bernardini, P. Kruszewski, et al.. (2008). Energy state distributions of the Pb centers at the (100), (110), and (111) Si∕SiO2 interfaces investigated by Laplace deep level transient spectroscopy. Applied Physics Letters. 92(24). 22 indexed citations
5.
Kruszewski, P., A. Mesli, L. Dobaczewski, et al.. (2007). Iron-aluminium pair reconfiguration processes in SiGe alloys. Journal of Materials Science Materials in Electronics. 18(7). 759–762. 3 indexed citations
6.
Żytkiewicz, Z. R., et al.. (2007). Tilt and dislocations in epitaxial laterally overgrown GaAs layers. Journal of Applied Physics. 101(1). 12 indexed citations
7.
Mesli, A., et al.. (2006). The As2V complex in silicon: Band-gap levels, migration and annealing. HAL (Le Centre pour la Communication Scientifique Directe). 2 indexed citations
8.
Dobaczewski, L., K. Bonde Nielsen, A. Nylandsted Larsen, & А. R. Peaker. (2006). Donor level of interstitial hydrogen in GaAs. Physica B Condensed Matter. 376-377. 614–617. 6 indexed citations
9.
Larsen, A. Nylandsted, A. Mesli, K. Bonde Nielsen, et al.. (2006). ECenter in Silicon Has a Donor Level in the Band Gap. Physical Review Letters. 97(10). 106402–106402. 34 indexed citations
10.
Mesli, A., et al.. (2006). Defects and impurities in SiGe: The effect of alloying. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 253(1-2). 154–161. 9 indexed citations
11.
Kolkovsky, Vl., A. Mesli, L. Dobaczewski, et al.. (2005). Stable and metastable configurations of iron atoms in SiGe alloys. Journal of Physics Condensed Matter. 17(22). S2267–S2272. 5 indexed citations
12.
Coutinho, J., Ole Andersen, L. Dobaczewski, et al.. (2003). Effect of stress on the energy levels of the vacancy-oxygen-hydrogen complex in Si. Physical review. B, Condensed matter. 68(18). 22 indexed citations
13.
Dobaczewski, L., Z. R. Żytkiewicz, K. Bonde Nielsen, et al.. (2002). Piezoscopic deep-level transient spectroscopy studies of the silicon divacancy. Physical review. B, Condensed matter. 65(11). 12 indexed citations
14.
Andersen, Ole, А. R. Peaker, L. Dobaczewski, et al.. (2002). Electrical activity of carbon-hydrogen centers in Si. Physical review. B, Condensed matter. 66(23). 34 indexed citations
15.
Andersen, Ole, L. Dobaczewski, А. R. Peaker, et al.. (2001). Piezospectroscopic analysis of the hydrogen–carbon complexes in silicon. Physica B Condensed Matter. 308-310. 139–142. 7 indexed citations
16.
Маркевич, В. П., Ole Andersen, J.H. Evans–Freeman, et al.. (2001). Defect reactions associated with the dissociation of the phosphorus–vacancy pair in silicon. Physica B Condensed Matter. 308-310. 513–516. 9 indexed citations
17.
Rubaldo, Laurent, I.D. Hawkins, Jonathan G. Terry, et al.. (1999). Gold–hydrogen complexes in silicon. Materials Science and Engineering B. 58(1-2). 126–129. 15 indexed citations
18.
Jia, Yifan, Zhongdong Han, H. G. Grimmeiss, & L. Dobaczewski. (1996). Deep levels in uniformly Si doped GaAs/AlxGa1−xAs quantum wells and superlattices. Journal of Applied Physics. 80(5). 2860–2865. 3 indexed citations
19.
Dobaczewski, L., I.D. Hawkins, & А. R. Peaker. (1995). Laplace transform deep level transient spectroscopy: new insight into defect microscopy. Materials Science and Technology. 11(10). 1071–1073. 2 indexed citations
20.
Dobaczewski, L. & P. Kaczor. (1992). TWO-STEP IONIZATION PROCESS OF THE DX CENTERS IN AlGaAs AND GaSb: EVIDENCE FOR A NEGATIVE-U CHARACTER OF THE DEFECT. Modern Physics Letters B. 6(1). 15–22. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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