L. J. Cheng

1.3k total citations
48 papers, 1.1k citations indexed

About

L. J. Cheng is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, L. J. Cheng has authored 48 papers receiving a total of 1.1k indexed citations (citations by other indexed papers that have themselves been cited), including 32 papers in Electrical and Electronic Engineering, 22 papers in Atomic and Molecular Physics, and Optics and 15 papers in Materials Chemistry. Recurrent topics in L. J. Cheng's work include Silicon and Solar Cell Technologies (23 papers), Semiconductor materials and interfaces (17 papers) and Muon and positron interactions and applications (9 papers). L. J. Cheng is often cited by papers focused on Silicon and Solar Cell Technologies (23 papers), Semiconductor materials and interfaces (17 papers) and Muon and positron interactions and applications (9 papers). L. J. Cheng collaborates with scholars based in United States, Canada and Taiwan. L. J. Cheng's co-authors include J. W. Corbett, J. A. Lori, J. C. Corelli, G. D. Watkins, P. M. Mooney, P. Vajda, Werner Brandt, M. L. Swanson, Lionel C. Kimerling and James P. Karins and has published in prestigious journals such as Physical Review Letters, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

L. J. Cheng

45 papers receiving 974 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
L. J. Cheng United States 14 954 485 303 230 156 48 1.1k
Л. И. Мурин Belarus 20 1.1k 1.1× 521 1.1× 458 1.5× 183 0.8× 35 0.2× 74 1.2k
Shigeru Nishimatsu Japan 16 820 0.9× 187 0.4× 307 1.0× 142 0.6× 131 0.8× 36 918
B.J. Sealy United Kingdom 17 836 0.9× 424 0.9× 509 1.7× 236 1.0× 117 0.8× 111 1.1k
Osamu Sugiura Japan 18 706 0.7× 159 0.3× 434 1.4× 107 0.5× 27 0.2× 72 789
W.T. Lindley United States 18 843 0.9× 559 1.2× 349 1.2× 114 0.5× 110 0.7× 31 1.1k
K.G. Stephens United Kingdom 15 627 0.7× 275 0.6× 172 0.6× 304 1.3× 64 0.4× 66 743
J. W. Cleland United States 14 511 0.5× 314 0.6× 153 0.5× 172 0.7× 23 0.1× 35 649
J. E. Yater United States 16 537 0.6× 172 0.4× 516 1.7× 101 0.4× 137 0.9× 48 851
B.K. Patnaik United States 15 306 0.3× 211 0.4× 313 1.0× 99 0.4× 88 0.6× 57 648
V. N. Brudnyı̆ Russia 13 522 0.5× 315 0.6× 313 1.0× 35 0.2× 70 0.4× 100 715

Countries citing papers authored by L. J. Cheng

Since Specialization
Citations

This map shows the geographic impact of L. J. Cheng's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by L. J. Cheng with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites L. J. Cheng more than expected).

Fields of papers citing papers by L. J. Cheng

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by L. J. Cheng. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by L. J. Cheng. The network helps show where L. J. Cheng may publish in the future.

Co-authorship network of co-authors of L. J. Cheng

This figure shows the co-authorship network connecting the top 25 collaborators of L. J. Cheng. A scholar is included among the top collaborators of L. J. Cheng based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with L. J. Cheng. L. J. Cheng is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Li, Weiyin, et al.. (2025). First principles study on the electronic and optical properties of Yb and La doped diamond. Materials Science in Semiconductor Processing. 192. 109457–109457. 2 indexed citations
2.
Zhu, Aijun, Weigang Hou, Xinghua Yang, et al.. (2024). A 2 to 4 Graphene Metamaterial Decoder and Tetrahydrofuran Detection. IEEE Sensors Journal. 24(18). 28753–28760. 5 indexed citations
3.
Zhu, Aijun, et al.. (2024). An Amplitude Tunable Dual-Band Bandpass Filter With Perfect Absorption and Its Sensing Applications. IEEE Sensors Journal. 24(4). 4387–4399. 10 indexed citations
4.
Buehler, M., et al.. (1999). MECA Electrometer: Initial Calibration Experiments. NASA Technical Reports Server (NASA). 5 indexed citations
5.
Song, Q. Wang, et al.. (1994). Matrix-vector multiplication by using pinhole holograms. Applied Optics. 33(5). 800–800. 2 indexed citations
6.
Cheng, L. J., et al.. (1990). Self-pumped and double phase conjugation in GaAs with applied dc electric field. Applied Physics Letters. 57(9). 858–860. 8 indexed citations
7.
Cheng, L. J.. (1985). Structural defect characterization of silicon dendritic web ribbons. Photovoltaic Specialists Conference. 1084–1087. 1 indexed citations
8.
Cheng, L. J., et al.. (1984). Characterization of CdS/CdTe and CdS/CuInSe2 thin film solar cells. Photovoltaic Specialists Conference. 851–855. 1 indexed citations
9.
Daud, T. & L. J. Cheng. (1981). Surface recombination velocity measurement for silicon solar cells. Photovoltaic Specialists Conference. 1183–1188. 3 indexed citations
10.
Cheng, L. J., et al.. (1980). Behavior of interdigitated back-contact solar cells. Photovoltaic Specialists Conference. 72–75. 1 indexed citations
11.
Cheng, L. J., et al.. (1980). The Effects of Titanium Impurities in N+/P Silicon Solar Cells. Journal of The Electrochemical Society. 127(5). 1164–1167. 12 indexed citations
12.
Cheng, L. J., et al.. (1978). Mechanisms of photon-induced changes in silicon solar cell parameters. Photovoltaic Specialists Conference. 1333–1336. 4 indexed citations
13.
Cheng, L. J., et al.. (1977). Carbon interstitial in electron-irradiated silicon. Solid State Communications. 21(1). 109–111. 53 indexed citations
14.
Brandt, Werner & L. J. Cheng. (1975). Positron escape from annihilation centers in electron-irradiated Si crystals. Physics Letters A. 50(6). 439–440. 22 indexed citations
15.
Cheng, L. J., et al.. (1975). Correlation between swelling and annihilation lineshape parameter in neutron-irradiated molybdenum. Physics Letters A. 53(5). 417–418. 1 indexed citations
16.
Cheng, L. J., et al.. (1975). Positron annihilation in neutron-irradiatedp-type Ge. Radiation Effects. 24(2). 95–100. 7 indexed citations
17.
Cheng, L. J. & J. A. Lori. (1970). 175°K recovery stage in irradiated p-type silicon. Physics Letters A. 31(5). 281–282. 1 indexed citations
18.
Cheng, L. J. & J. A. Lori. (1970). Electrical Properties of Gamma-Irradiatedp-Type Silicon. Physical review. B, Solid state. 1(4). 1558–1563. 12 indexed citations
19.
Cheng, L. J. & P. Vajda. (1969). 11.6 μ Oxygen-Associated Absorption Band in Neutron-Irradiated Silicon. Journal of Applied Physics. 40(11). 4679–4680. 15 indexed citations
20.
Cheng, L. J. & J. C. Corelli. (1965). Recovery of Electrical Properties in 45-MeV-Electron-Irradiatedn-Type Si from 80 to 350°K. Physical Review. 140(6A). A2130–A2135. 6 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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